SG129259A1 - Radiation source lithographic apparatus, and device manufacturing method - Google Patents
Radiation source lithographic apparatus, and device manufacturing methodInfo
- Publication number
- SG129259A1 SG129259A1 SG200305633A SG200305633A SG129259A1 SG 129259 A1 SG129259 A1 SG 129259A1 SG 200305633 A SG200305633 A SG 200305633A SG 200305633 A SG200305633 A SG 200305633A SG 129259 A1 SG129259 A1 SG 129259A1
- Authority
- SG
- Singapore
- Prior art keywords
- radiation source
- source comprises
- improve
- radiation
- device manufacturing
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05G—X-RAY TECHNIQUE
- H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05G—X-RAY TECHNIQUE
- H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
- H05G2/001—X-ray radiation generated from plasma
- H05G2/003—X-ray radiation generated from plasma being produced from a liquid or gas
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F28—HEAT EXCHANGE IN GENERAL
- F28D—HEAT-EXCHANGE APPARATUS, NOT PROVIDED FOR IN ANOTHER SUBCLASS, IN WHICH THE HEAT-EXCHANGE MEDIA DO NOT COME INTO DIRECT CONTACT
- F28D15/00—Heat-exchange apparatus with the intermediate heat-transfer medium in closed tubes passing into or through the conduit walls ; Heat-exchange apparatus employing intermediate heat-transfer medium or bodies
- F28D15/02—Heat-exchange apparatus with the intermediate heat-transfer medium in closed tubes passing into or through the conduit walls ; Heat-exchange apparatus employing intermediate heat-transfer medium or bodies in which the medium condenses and evaporates, e.g. heat pipes
- F28D15/0266—Heat-exchange apparatus with the intermediate heat-transfer medium in closed tubes passing into or through the conduit walls ; Heat-exchange apparatus employing intermediate heat-transfer medium or bodies in which the medium condenses and evaporates, e.g. heat pipes with separate evaporating and condensing chambers connected by at least one conduit; Loop-type heat pipes; with multiple or common evaporating or condensing chambers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70008—Production of exposure light, i.e. light sources
- G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/7015—Details of optical elements
- G03F7/70166—Capillary or channel elements, e.g. nested extreme ultraviolet [EUV] mirrors or shells, optical fibers or light guides
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
- G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05G—X-RAY TECHNIQUE
- H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
- H05G2/001—X-ray radiation generated from plasma
- H05G2/003—X-ray radiation generated from plasma being produced from a liquid or gas
- H05G2/005—X-ray radiation generated from plasma being produced from a liquid or gas containing a metal as principal radiation generating component
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- General Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Optics & Photonics (AREA)
- Public Health (AREA)
- Chemical & Material Sciences (AREA)
- Epidemiology (AREA)
- Health & Medical Sciences (AREA)
- Atmospheric Sciences (AREA)
- Nanotechnology (AREA)
- Theoretical Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Thermal Sciences (AREA)
- Mechanical Engineering (AREA)
- Sustainable Development (AREA)
- Environmental & Geological Engineering (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- X-Ray Techniques (AREA)
- Plasma Technology (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP02256907 | 2002-10-03 |
Publications (1)
Publication Number | Publication Date |
---|---|
SG129259A1 true SG129259A1 (en) | 2007-02-26 |
Family
ID=32695567
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG200305633A SG129259A1 (en) | 2002-10-03 | 2003-09-17 | Radiation source lithographic apparatus, and device manufacturing method |
SG200305749A SG127702A1 (en) | 2002-10-03 | 2003-09-30 | Radiation source, lithographic apparatus, and device manufacturing method |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG200305749A SG127702A1 (en) | 2002-10-03 | 2003-09-30 | Radiation source, lithographic apparatus, and device manufacturing method |
Country Status (6)
Country | Link |
---|---|
US (2) | US6933510B2 (zh) |
JP (2) | JP4188208B2 (zh) |
KR (1) | KR100606498B1 (zh) |
CN (1) | CN100505974C (zh) |
SG (2) | SG129259A1 (zh) |
TW (1) | TWI252377B (zh) |
Families Citing this family (40)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7405416B2 (en) * | 2005-02-25 | 2008-07-29 | Cymer, Inc. | Method and apparatus for EUV plasma source target delivery |
KR100748447B1 (ko) * | 2002-08-23 | 2007-08-10 | 에이에스엠엘 네델란즈 비.브이. | 리소그래피 투영장치 및 상기 장치에 사용하기 위한파티클 배리어 |
CN100594428C (zh) * | 2002-09-19 | 2010-03-17 | Asml荷兰有限公司 | 辐射源、光刻装置和器件的制造方法 |
US7002168B2 (en) * | 2002-10-15 | 2006-02-21 | Cymer, Inc. | Dense plasma focus radiation source |
US7217941B2 (en) * | 2003-04-08 | 2007-05-15 | Cymer, Inc. | Systems and methods for deflecting plasma-generated ions to prevent the ions from reaching an internal component of an EUV light source |
DE10325151B4 (de) * | 2003-05-30 | 2006-11-30 | Infineon Technologies Ag | Vorrichtung für die Erzeugung und/oder Beeinflussung elektromagnetischer Strahlung eines Plasmas |
SG118268A1 (en) * | 2003-06-27 | 2006-01-27 | Asml Netherlands Bv | Laser produced plasma radiation system with foil trap |
US7732789B2 (en) * | 2004-07-22 | 2010-06-08 | Koninklijke Philips Electronics N.V. | Optical system having a cleaning arrangement |
US7329884B2 (en) * | 2004-11-08 | 2008-02-12 | Nikon Corporation | Exposure apparatus and exposure method |
DE102004058500A1 (de) * | 2004-12-04 | 2006-06-08 | Philips Intellectual Property & Standards Gmbh | Verfahren und Vorrichtung zum Betreiben einer elektrischen Entladevorrichtung |
JP4366358B2 (ja) | 2004-12-29 | 2009-11-18 | エーエスエムエル ネザーランズ ビー.ブイ. | リソグラフィ装置、照明システム、フィルタ・システム、およびそのようなフィルタ・システムのサポートを冷却するための方法 |
US7233010B2 (en) * | 2005-05-20 | 2007-06-19 | Asml Netherlands B.V. | Radiation system and lithographic apparatus |
JP5176037B2 (ja) * | 2005-05-30 | 2013-04-03 | 国立大学法人大阪大学 | 極端紫外光源用ターゲット |
JP4429302B2 (ja) * | 2005-09-23 | 2010-03-10 | エーエスエムエル ネザーランズ ビー.ブイ. | 電磁放射線源、リソグラフィ装置、デバイス製造方法、および該製造方法によって製造されたデバイス |
DE102005055686B3 (de) * | 2005-11-18 | 2007-05-31 | Xtreme Technologies Gmbh | Anordnung zur Erzeugung kurzwelliger Strahlung auf Basis eines Gasentladungsplasmas sowie Verfahren zur Herstellung von kühlmitteldurchströmten Elektrodengehäusen |
US7479646B2 (en) * | 2005-12-09 | 2009-01-20 | Plex Llc | Extreme ultraviolet source with wide angle vapor containment and reflux |
US7863542B2 (en) | 2005-12-22 | 2011-01-04 | Sony Corporation | Laser processing apparatus and laser processing method as well as debris extraction mechanism and debris extraction method |
ATE489839T1 (de) * | 2006-05-16 | 2010-12-15 | Koninkl Philips Electronics Nv | Verfahren zur erhöhung der umwandlungseffizienz einer euv- und/oder weichen röntgenstrahlenlampe und entsprechendes gerät |
US7609815B2 (en) * | 2006-06-01 | 2009-10-27 | The Regents Of The University Of California | High brightness—multiple beamlets source for patterned X-ray production |
US7825390B2 (en) * | 2007-02-14 | 2010-11-02 | Asml Netherlands B.V. | Apparatus with plasma radiation source and method of forming a beam of radiation and lithographic apparatus |
US20080239262A1 (en) * | 2007-03-29 | 2008-10-02 | Asml Netherlands B.V. | Radiation source for generating electromagnetic radiation and method for generating electromagnetic radiation |
US8493548B2 (en) * | 2007-08-06 | 2013-07-23 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7872244B2 (en) * | 2007-08-08 | 2011-01-18 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
NL1035846A1 (nl) * | 2007-08-23 | 2009-02-24 | Asml Netherlands Bv | Radiation source. |
US7700930B2 (en) * | 2007-09-14 | 2010-04-20 | Asml Netherlands B.V. | Lithographic apparatus with rotation filter device |
US7872245B2 (en) * | 2008-03-17 | 2011-01-18 | Cymer, Inc. | Systems and methods for target material delivery in a laser produced plasma EUV light source |
NL2002890A1 (nl) * | 2008-06-16 | 2009-12-17 | Asml Netherlands Bv | Lithographic apparatus. |
EP2146368A1 (en) * | 2008-07-15 | 2010-01-20 | Barco N.V. | Gas discharge lamp system |
US8891058B2 (en) * | 2008-07-18 | 2014-11-18 | Koninklijke Philips N.V. | Extreme UV radiation generating device comprising a contamination captor |
CN103257532B (zh) * | 2008-09-11 | 2015-04-22 | Asml荷兰有限公司 | 辐射源和光刻设备 |
US20110089834A1 (en) * | 2009-10-20 | 2011-04-21 | Plex Llc | Z-pinch plasma generator and plasma target |
CN102696283B (zh) * | 2010-01-07 | 2015-07-08 | Asml荷兰有限公司 | 包括液滴加速器的euv辐射源以及光刻设备 |
CN102782582A (zh) * | 2010-03-12 | 2012-11-14 | Asml荷兰有限公司 | 辐射源、光刻设备以及器件制造方法 |
CN104380203B (zh) * | 2012-06-12 | 2017-09-08 | Asml荷兰有限公司 | 光子源、检查设备、光刻***以及器件制造方法 |
US9753383B2 (en) * | 2012-06-22 | 2017-09-05 | Asml Netherlands B.V. | Radiation source and lithographic apparatus |
KR102281775B1 (ko) * | 2012-11-15 | 2021-07-27 | 에이에스엠엘 네델란즈 비.브이. | 리소그래피를 위한 방법 및 방사선 소스 |
US8901523B1 (en) * | 2013-09-04 | 2014-12-02 | Asml Netherlands B.V. | Apparatus for protecting EUV optical elements |
DE102014226309A1 (de) * | 2014-12-17 | 2016-06-23 | Carl Zeiss Smt Gmbh | Komponente; optisches System und Lithographieanlage |
US10203604B2 (en) * | 2015-11-30 | 2019-02-12 | Applied Materials, Inc. | Method and apparatus for post exposure processing of photoresist wafers |
NL2021345A (en) | 2018-04-12 | 2018-08-22 | Asml Netherlands Bv | Lithographic apparatus |
Family Cites Families (25)
Publication number | Priority date | Publication date | Assignee | Title |
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US3654567A (en) | 1970-12-31 | 1972-04-04 | Ibm | Vapor discharge cell |
US3892970A (en) * | 1974-06-11 | 1975-07-01 | Us Energy | Relativistic electron beam device |
US4247830A (en) | 1978-11-08 | 1981-01-27 | General Electric Company | Plasma sprayed wicks for pulsed metal vapor lasers |
US5148440A (en) | 1983-11-25 | 1992-09-15 | The United States Of America As Represented By The United States Department Of Energy | Wick for metal vapor laser |
US5243638A (en) * | 1992-03-10 | 1993-09-07 | Hui Wang | Apparatus and method for generating a plasma x-ray source |
US5499282A (en) * | 1994-05-02 | 1996-03-12 | University Of Central Florida | Efficient narrow spectral width soft-X-ray discharge sources |
US6683783B1 (en) * | 1997-03-07 | 2004-01-27 | William Marsh Rice University | Carbon fibers formed from single-wall carbon nanotubes |
US6031241A (en) | 1997-03-11 | 2000-02-29 | University Of Central Florida | Capillary discharge extreme ultraviolet lamp source for EUV microlithography and other related applications |
US6815700B2 (en) * | 1997-05-12 | 2004-11-09 | Cymer, Inc. | Plasma focus light source with improved pulse power system |
US6566667B1 (en) * | 1997-05-12 | 2003-05-20 | Cymer, Inc. | Plasma focus light source with improved pulse power system |
US6566668B2 (en) * | 1997-05-12 | 2003-05-20 | Cymer, Inc. | Plasma focus light source with tandem ellipsoidal mirror units |
US6586757B2 (en) | 1997-05-12 | 2003-07-01 | Cymer, Inc. | Plasma focus light source with active and buffer gas control |
US6452199B1 (en) * | 1997-05-12 | 2002-09-17 | Cymer, Inc. | Plasma focus high energy photon source with blast shield |
US6744060B2 (en) * | 1997-05-12 | 2004-06-01 | Cymer, Inc. | Pulse power system for extreme ultraviolet and x-ray sources |
US5861630A (en) * | 1997-11-22 | 1999-01-19 | Becker; Richard L. | Method for generating a boron vapor |
DE19753696A1 (de) * | 1997-12-03 | 1999-06-17 | Fraunhofer Ges Forschung | Vorrichtung und Verfahren zur Erzeugung von Extrem-Ultraviolettstrahlung und weicher Röntgenstrahlung aus einer Gasentladung |
TWI246872B (en) * | 1999-12-17 | 2006-01-01 | Asml Netherlands Bv | Radiation source for use in lithographic projection apparatus |
US6667484B2 (en) * | 2000-07-03 | 2003-12-23 | Asml Netherlands B.V. | Radiation source, lithographic apparatus, device manufacturing method, and device manufactured thereby |
KR100555930B1 (ko) * | 2001-01-19 | 2006-03-03 | 에이에스엠엘 네델란즈 비.브이. | 리소그래피 장치, 디바이스 제조방법 및 그 디바이스 |
US6804327B2 (en) * | 2001-04-03 | 2004-10-12 | Lambda Physik Ag | Method and apparatus for generating high output power gas discharge based source of extreme ultraviolet radiation and/or soft x-rays |
US6912041B2 (en) * | 2001-06-29 | 2005-06-28 | Asml Netherlands B.V. | Lithographic apparatus and method |
US20030162179A1 (en) * | 2002-02-27 | 2003-08-28 | General Electric Company | Fabrication, performance testing, and screening of three dimensional arrays of materials |
EP1401248B1 (en) | 2002-09-19 | 2012-07-25 | ASML Netherlands B.V. | Radiation source, lithographic apparatus, and device manufacturing method |
TWI255394B (en) * | 2002-12-23 | 2006-05-21 | Asml Netherlands Bv | Lithographic apparatus with debris suppression means and device manufacturing method |
SG115693A1 (en) * | 2003-05-21 | 2005-10-28 | Asml Netherlands Bv | Method for coating a substrate for euv lithography and substrate with photoresist layer |
-
2003
- 2003-09-17 SG SG200305633A patent/SG129259A1/en unknown
- 2003-09-30 TW TW092127062A patent/TWI252377B/zh not_active IP Right Cessation
- 2003-09-30 US US10/673,644 patent/US6933510B2/en not_active Expired - Fee Related
- 2003-09-30 JP JP2003376283A patent/JP4188208B2/ja not_active Expired - Fee Related
- 2003-09-30 SG SG200305749A patent/SG127702A1/en unknown
- 2003-09-30 CN CNB031649319A patent/CN100505974C/zh not_active Expired - Fee Related
- 2003-10-01 KR KR1020030068466A patent/KR100606498B1/ko not_active IP Right Cessation
-
2005
- 2005-07-25 US US11/187,860 patent/US20050253092A1/en not_active Abandoned
-
2006
- 2006-08-03 JP JP2006211722A patent/JP2007019031A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
US20050253092A1 (en) | 2005-11-17 |
SG127702A1 (en) | 2006-12-29 |
JP2007019031A (ja) | 2007-01-25 |
US6933510B2 (en) | 2005-08-23 |
KR20040031601A (ko) | 2004-04-13 |
TWI252377B (en) | 2006-04-01 |
CN100505974C (zh) | 2009-06-24 |
JP2004165160A (ja) | 2004-06-10 |
TW200421040A (en) | 2004-10-16 |
US20040141165A1 (en) | 2004-07-22 |
JP4188208B2 (ja) | 2008-11-26 |
CN1498056A (zh) | 2004-05-19 |
KR100606498B1 (ko) | 2006-08-02 |
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