SG112046A1 - Method of manufacturing semiconductor wafer - Google Patents

Method of manufacturing semiconductor wafer

Info

Publication number
SG112046A1
SG112046A1 SG200406592A SG200406592A SG112046A1 SG 112046 A1 SG112046 A1 SG 112046A1 SG 200406592 A SG200406592 A SG 200406592A SG 200406592 A SG200406592 A SG 200406592A SG 112046 A1 SG112046 A1 SG 112046A1
Authority
SG
Singapore
Prior art keywords
semiconductor wafer
manufacturing semiconductor
manufacturing
wafer
semiconductor
Prior art date
Application number
SG200406592A
Other languages
English (en)
Inventor
Arai Kazuhisa
Original Assignee
Disco Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Disco Corp filed Critical Disco Corp
Publication of SG112046A1 publication Critical patent/SG112046A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
SG200406592A 2003-11-17 2004-11-10 Method of manufacturing semiconductor wafer SG112046A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003386451A JP4416108B2 (ja) 2003-11-17 2003-11-17 半導体ウェーハの製造方法

Publications (1)

Publication Number Publication Date
SG112046A1 true SG112046A1 (en) 2005-06-29

Family

ID=34567411

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200406592A SG112046A1 (en) 2003-11-17 2004-11-10 Method of manufacturing semiconductor wafer

Country Status (5)

Country Link
US (1) US7183178B2 (ja)
JP (1) JP4416108B2 (ja)
CN (1) CN100385630C (ja)
DE (1) DE102004055233B4 (ja)
SG (1) SG112046A1 (ja)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3859682B1 (ja) 2005-09-08 2006-12-20 東京応化工業株式会社 基板の薄板化方法及び回路素子の製造方法
JP5074719B2 (ja) 2006-07-14 2012-11-14 東京応化工業株式会社 ウエハを薄くする方法及びサポートプレート
US8389099B1 (en) 2007-06-01 2013-03-05 Rubicon Technology, Inc. Asymmetrical wafer configurations and method for creating the same
US8348720B1 (en) 2007-06-19 2013-01-08 Rubicon Technology, Inc. Ultra-flat, high throughput wafer lapping process
JP2009224454A (ja) * 2008-03-14 2009-10-01 Disco Abrasive Syst Ltd 光デバイスの製造方法
FR2944645B1 (fr) 2009-04-21 2011-09-16 Soitec Silicon On Insulator Procede d'amincissement d'un substrat silicium sur isolant
US9227295B2 (en) 2011-05-27 2016-01-05 Corning Incorporated Non-polished glass wafer, thinning system and method for using the non-polished glass wafer to thin a semiconductor wafer
JP5890977B2 (ja) * 2011-07-20 2016-03-22 株式会社ディスコ 加工方法
JP5846060B2 (ja) * 2011-07-27 2016-01-20 信越化学工業株式会社 ウエハ加工体、ウエハ加工用部材、ウエハ加工用仮接着材、及び薄型ウエハの製造方法
JP2013168430A (ja) * 2012-02-14 2013-08-29 Disco Abrasive Syst Ltd ウエーハの加工方法
JP5687647B2 (ja) * 2012-03-14 2015-03-18 株式会社東芝 半導体装置の製造方法、半導体製造装置
JP2013197511A (ja) * 2012-03-22 2013-09-30 Toshiba Corp サポート基板、半導体装置の製造方法、半導体装置の検査方法
JP2013201240A (ja) 2012-03-23 2013-10-03 Toshiba Corp 半導体装置の製造方法および半導体基板支持用ガラス基板
JP6093328B2 (ja) * 2013-06-13 2017-03-08 東京エレクトロン株式会社 基板処理システム、基板処理方法、プログラム及びコンピュータ記憶媒体
CN103956337B (zh) * 2014-05-23 2016-06-15 扬州杰利半导体有限公司 一种半导体晶片的切割方法
JP2016092065A (ja) * 2014-10-30 2016-05-23 株式会社ディスコ ウェーハの研削方法及び積層保護テープ
KR102515348B1 (ko) 2015-05-28 2023-03-30 에이지씨 가부시키가이샤 유리 기판 및 적층 기판
US11133186B2 (en) * 2018-09-14 2021-09-28 Disco Corporation Processing method of workpiece

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10337823A (ja) * 1997-04-11 1998-12-22 Lintec Corp 基材および該基材を用いた粘着テープ
JP2000040677A (ja) * 1998-07-23 2000-02-08 Nippon Telegr & Teleph Corp <Ntt> 半導体素子の製造方法
JP2001093863A (ja) * 1999-09-24 2001-04-06 Toshiba Corp ウェーハ裏面スパッタリング方法及び半導体製造装置
JP2002075940A (ja) * 2000-08-25 2002-03-15 Hitachi Ltd 半導体装置の製造方法
JP2003197581A (ja) * 2001-10-18 2003-07-11 Fujitsu Ltd 板状物支持部材及びその使用方法
JP2003209082A (ja) * 2002-01-15 2003-07-25 Nitto Denko Corp 保護テープの貼付方法およびその装置並びに保護テープの剥離方法
US7534498B2 (en) * 2002-06-03 2009-05-19 3M Innovative Properties Company Laminate body, method, and apparatus for manufacturing ultrathin substrate using the laminate body
JP2004079889A (ja) 2002-08-21 2004-03-11 Disco Abrasive Syst Ltd 半導体ウェーハの製造方法

Also Published As

Publication number Publication date
DE102004055233B4 (de) 2016-07-21
US7183178B2 (en) 2007-02-27
JP4416108B2 (ja) 2010-02-17
CN100385630C (zh) 2008-04-30
CN1619779A (zh) 2005-05-25
JP2005150434A (ja) 2005-06-09
US20050106840A1 (en) 2005-05-19
DE102004055233A1 (de) 2005-06-30

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