SG11202105177SA - Photonics structure with integrated laser - Google Patents

Photonics structure with integrated laser

Info

Publication number
SG11202105177SA
SG11202105177SA SG11202105177SA SG11202105177SA SG11202105177SA SG 11202105177S A SG11202105177S A SG 11202105177SA SG 11202105177S A SG11202105177S A SG 11202105177SA SG 11202105177S A SG11202105177S A SG 11202105177SA SG 11202105177S A SG11202105177S A SG 11202105177SA
Authority
SG
Singapore
Prior art keywords
integrated laser
photonics structure
photonics
laser
integrated
Prior art date
Application number
SG11202105177SA
Other languages
English (en)
Inventor
William Charles
John Bowers
Douglas Coolbaugh
Daehwan Jung
Jonathan Klamkin
Tulipe Douglas La
Gerald Leake
Songtao Liu
Justin Norman
Original Assignee
Univ New York State Res Found
Univ California
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ New York State Res Found, Univ California filed Critical Univ New York State Res Found
Priority claimed from PCT/US2019/052232 external-priority patent/WO2020123008A1/en
Publication of SG11202105177SA publication Critical patent/SG11202105177SA/en

Links

Classifications

    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/13Integrated optical circuits characterised by the manufacturing method
    • G02B6/131Integrated optical circuits characterised by the manufacturing method by using epitaxial growth
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/12002Three-dimensional structures
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/12007Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind forming wavelength selective elements, e.g. multiplexer, demultiplexer
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/12004Combinations of two or more optical elements
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/13Integrated optical circuits characterised by the manufacturing method
    • G02B6/132Integrated optical circuits characterised by the manufacturing method by deposition of thin films
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/13Integrated optical circuits characterised by the manufacturing method
    • G02B6/136Integrated optical circuits characterised by the manufacturing method by etching
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24Coupling light guides
    • G02B6/42Coupling light guides with opto-electronic elements
    • G02B6/4201Packages, e.g. shape, construction, internal or external details
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/0206Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/021Silicon based substrates
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/026Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/40Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031Edge-emitting structures
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12035Materials
    • G02B2006/12061Silicon
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12083Constructional arrangements
    • G02B2006/121Channel; buried or the like
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12083Constructional arrangements
    • G02B2006/12121Laser
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12166Manufacturing methods
    • G02B2006/12178Epitaxial growth
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24Coupling light guides
    • G02B6/26Optical coupling means
    • G02B6/28Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals
    • G02B6/2804Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals forming multipart couplers without wavelength selective elements, e.g. "T" couplers, star couplers
    • G02B6/2821Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals forming multipart couplers without wavelength selective elements, e.g. "T" couplers, star couplers using lateral coupling between contiguous fibres to split or combine optical signals
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/04Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042Electrical excitation ; Circuits therefor
    • H01S5/0421Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
    • H01S5/0422Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers with n- and p-contacts on the same side of the active layer
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/04Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042Electrical excitation ; Circuits therefor
    • H01S5/0425Electrodes, e.g. characterised by the structure
    • H01S5/04254Electrodes, e.g. characterised by the structure characterised by the shape
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/10Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1028Coupling to elements in the cavity, e.g. coupling to waveguides adjacent the active region, e.g. forward coupled [DFC] structures
    • H01S5/1032Coupling to elements comprising an optical axis that is not aligned with the optical axis of the active region
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/30Structure or shape of the active region; Materials used for the active region
    • H01S5/34Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/341Structures having reduced dimensionality, e.g. quantum wires
    • H01S5/3412Structures having reduced dimensionality, e.g. quantum wires quantum box or quantum dash

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Integrated Circuits (AREA)
SG11202105177SA 2018-11-21 2019-09-20 Photonics structure with integrated laser SG11202105177SA (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201862770623P 2018-11-21 2018-11-21
TW108133747A TWI829761B (zh) 2018-11-21 2019-09-19 具有積體雷射的光學結構
US16/575,820 US11029466B2 (en) 2018-11-21 2019-09-19 Photonics structure with integrated laser
PCT/US2019/052232 WO2020123008A1 (en) 2018-11-21 2019-09-20 Photonics structure with integrated laser

Publications (1)

Publication Number Publication Date
SG11202105177SA true SG11202105177SA (en) 2021-06-29

Family

ID=70771439

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11202105177SA SG11202105177SA (en) 2018-11-21 2019-09-20 Photonics structure with integrated laser

Country Status (6)

Country Link
US (1) US11029466B2 (zh)
EP (1) EP3884321A1 (zh)
JP (1) JP2022509947A (zh)
KR (1) KR20220002239A (zh)
SG (1) SG11202105177SA (zh)
TW (1) TWI829761B (zh)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10877300B2 (en) 2018-04-04 2020-12-29 The Research Foundation For The State University Of New York Heterogeneous structure on an integrated photonics platform
US11550099B2 (en) 2018-11-21 2023-01-10 The Research Foundation For The State University Of New York Photonics optoelectrical system
US11029466B2 (en) 2018-11-21 2021-06-08 The Research Foundation For The State University Of New York Photonics structure with integrated laser
US11810986B2 (en) * 2019-11-15 2023-11-07 Institute of Microelectronics, Chinese Academy of Sciences Method for integrating surface-electrode ion trap and silicon photoelectronic device, integrated structure, and three-dimensional structure
US11307483B2 (en) 2020-07-02 2022-04-19 Robert Bosch Gmbh MEMS optical switch with dual cantilever couplers
US11300852B2 (en) * 2020-07-02 2022-04-12 Robert Bosch Gmbh MEMS optical switch with a cantilever coupler
US11340399B2 (en) 2020-07-02 2022-05-24 Robert Bosch Gmbh In-plane MEMS optical switch
US11360270B2 (en) 2020-07-02 2022-06-14 Robert Bosch Gmbh MEMS optical switch with stop control
US11662523B2 (en) * 2021-01-19 2023-05-30 Globalfoundries U.S. Inc. Edge couplers in the back-end-of-line stack of a photonics chip
US11579367B2 (en) * 2021-02-10 2023-02-14 Alpine Optoelectronics, Inc. Integrated waveguide polarizer
US11796735B2 (en) * 2021-07-06 2023-10-24 Taiwan Semiconductor Manufacturing Co., Ltd. Integrated 3DIC with stacked photonic dies and method forming same
US11835764B2 (en) * 2022-01-31 2023-12-05 Globalfoundries U.S. Inc. Multiple-core heterogeneous waveguide structures including multiple slots
US20240176072A1 (en) * 2022-11-29 2024-05-30 Tin Komljenovic Heterogenously integrated short wavelength photonic platform

Family Cites Families (141)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5841931A (en) 1996-11-26 1998-11-24 Massachusetts Institute Of Technology Methods of forming polycrystalline semiconductor waveguides for optoelectronic integrated circuits, and devices formed thereby
EP0867701A1 (en) 1997-03-28 1998-09-30 Interuniversitair Microelektronica Centrum Vzw Method of fabrication of an infrared radiation detector and more particularly an infrared sensitive bolometer
US6056630A (en) 1998-05-19 2000-05-02 Lucent Technologies Inc. Polishing apparatus with carrier head pivoting device
US6048775A (en) 1999-05-24 2000-04-11 Vanguard International Semiconductor Corporation Method to make shallow trench isolation structure by HDP-CVD and chemical mechanical polish processes
DE60045126D1 (de) 1999-06-25 2010-12-02 Massachusetts Inst Technology Oxidation einer auf einer germaniumschicht aufgebrachten siliziumschicht
HUP0000532A2 (hu) 2000-02-07 2002-03-28 Optilink Ab Eljárás és rendszer információ rögzítésére holografikus kártyán
US6879014B2 (en) 2000-03-20 2005-04-12 Aegis Semiconductor, Inc. Semitransparent optical detector including a polycrystalline layer and method of making
US7103245B2 (en) 2000-07-10 2006-09-05 Massachusetts Institute Of Technology High density integrated optical chip
WO2002004999A2 (en) 2000-07-10 2002-01-17 Massachusetts Institute Of Technology Graded index waveguide
US6631225B2 (en) 2000-07-10 2003-10-07 Massachusetts Institute Of Technology Mode coupler between low index difference waveguide and high index difference waveguide
AUPQ897600A0 (en) 2000-07-25 2000-08-17 Liddiard, Kevin Active or self-biasing micro-bolometer infrared detector
JP2002353205A (ja) 2000-08-28 2002-12-06 Mitsubishi Electric Corp 半導体装置の製造方法およびそれに用いられるウェハ処理装置並びに半導体装置
CN101052906A (zh) 2000-10-13 2007-10-10 马萨诸塞州技术研究院 带有沟槽结构的光波导
US6694082B2 (en) 2001-04-05 2004-02-17 Lucent Technologies Inc. Polycrystalline ferroelectric optical devices
GB0122427D0 (en) 2001-09-17 2001-11-07 Denselight Semiconductors Pte Fabrication of stacked photonic lightwave circuits
US6706576B1 (en) 2002-03-14 2004-03-16 Advanced Micro Devices, Inc. Laser thermal annealing of silicon nitride for increased density and etch selectivity
US7190871B2 (en) 2002-04-09 2007-03-13 Massachusetts Institute Of Technology Polysilane thin films for directly patternable waveguides
US6855975B2 (en) 2002-04-10 2005-02-15 Micron Technology, Inc. Thin film diode integrated with chalcogenide memory cell
AU2002368035A1 (en) 2002-06-19 2004-01-06 Massachusetts Institute Of Technology Ge photodetectors
US6887773B2 (en) 2002-06-19 2005-05-03 Luxtera, Inc. Methods of incorporating germanium within CMOS process
FR2842022B1 (fr) 2002-07-03 2005-05-06 Commissariat Energie Atomique Dispositif de maintien d'un objet sous vide et procedes de fabrication de ce dispositif, application aux detecteurs intrarouges non refroidis
JP2004109888A (ja) 2002-09-20 2004-04-08 Yasuo Kokubu 光導波路及びその製造方法
US7389029B2 (en) 2003-07-03 2008-06-17 Applied Research And Photonics, Inc. Photonic waveguide structures for chip-scale photonic integrated circuits
US7095010B2 (en) 2002-12-04 2006-08-22 California Institute Of Technology Silicon on insulator resonator sensors and modulators and method of operating the same
US7453129B2 (en) 2002-12-18 2008-11-18 Noble Peak Vision Corp. Image sensor comprising isolated germanium photodetectors integrated with a silicon substrate and silicon circuitry
US7767499B2 (en) 2002-12-19 2010-08-03 Sandisk 3D Llc Method to form upward pointing p-i-n diodes having large and uniform current
US20060249753A1 (en) 2005-05-09 2006-11-09 Matrix Semiconductor, Inc. High-density nonvolatile memory array fabricated at low temperature comprising semiconductor diodes
JP2004259882A (ja) 2003-02-25 2004-09-16 Seiko Epson Corp 半導体装置及びその製造方法
US7262117B1 (en) 2003-06-10 2007-08-28 Luxtera, Inc. Germanium integrated CMOS wafer and method for manufacturing the same
WO2004113977A1 (en) 2003-06-16 2004-12-29 Massachusetts Institute Of Technology Multiple oxidation and etch smoothing method for reducing silicon waveguide roughness
US7205525B2 (en) 2003-09-05 2007-04-17 Analog Devices, Inc. Light conversion apparatus with topside electrode
DE60324425D1 (de) * 2003-09-05 2008-12-11 Epispeed S A Durch LEPECVD und MOCVD auf Silizium hergestellte GaAs/GaAs-Laser
US7262140B2 (en) 2003-11-24 2007-08-28 Intel Corporation Method of smoothing waveguide structures
US7773836B2 (en) 2005-12-14 2010-08-10 Luxtera, Inc. Integrated transceiver with lightpipe coupler
US7251386B1 (en) 2004-01-14 2007-07-31 Luxtera, Inc Integrated photonic-electronic circuits and systems
US20050185884A1 (en) 2004-01-23 2005-08-25 Haus Hermann A. Single-level no-crossing microelectromechanical hitless switch for high density integrated optics
US20050220984A1 (en) 2004-04-02 2005-10-06 Applied Materials Inc., A Delaware Corporation Method and system for control of processing conditions in plasma processing systems
CA2573928A1 (en) 2004-06-17 2006-01-19 Ion Optics, Inc. Photonic crystal emitter, detector, and sensor
US7397101B1 (en) 2004-07-08 2008-07-08 Luxtera, Inc. Germanium silicon heterostructure photodetectors
WO2006015280A2 (en) 2004-07-28 2006-02-09 Massachusetts Institute Of Technology Photodetectors including germanium
US7194166B1 (en) 2004-08-26 2007-03-20 Luxtera, Inc. Use of waveguide grating couplers in an optical mux/demux system
WO2006034271A1 (en) 2004-09-17 2006-03-30 Massachusetts Institute Of Technology Silicon based on-chip photonic band gap cladding waveguide
US7157300B2 (en) 2004-11-19 2007-01-02 Sharp Laboratories Of America, Inc. Fabrication of thin film germanium infrared sensor by bonding to silicon wafer
US7186611B2 (en) 2005-02-28 2007-03-06 Sharp Laboratories Of America, Inc. High-density germanium-on-insulator photodiode array
US7008813B1 (en) 2005-02-28 2006-03-07 Sharp Laboratories Of America, Inc.. Epitaxial growth of germanium photodetector for CMOS imagers
US7812404B2 (en) 2005-05-09 2010-10-12 Sandisk 3D Llc Nonvolatile memory cell comprising a diode and a resistance-switching material
US20060250836A1 (en) 2005-05-09 2006-11-09 Matrix Semiconductor, Inc. Rewriteable memory cell comprising a diode and a resistance-switching material
US7801406B2 (en) 2005-08-01 2010-09-21 Massachusetts Institute Of Technology Method of fabricating Ge or SiGe/Si waveguide or photonic crystal structures by selective growth
US7358107B2 (en) 2005-10-27 2008-04-15 Sharp Laboratories Of America, Inc. Method of fabricating a germanium photo detector on a high quality germanium epitaxial overgrowth layer
US7305157B2 (en) 2005-11-08 2007-12-04 Massachusetts Institute Of Technology Vertically-integrated waveguide photodetector apparatus and related coupling methods
US7811913B2 (en) 2005-12-19 2010-10-12 Sharp Laboratories Of America, Inc. Method of fabricating a low, dark-current germanium-on-silicon pin photo detector
US20070170536A1 (en) 2006-01-25 2007-07-26 Sharp Laboratories Of America, Inc. Liquid phase epitaxial GOI photodiode with buried high resistivity germanium layer
US7459686B2 (en) 2006-01-26 2008-12-02 L-3 Communications Corporation Systems and methods for integrating focal plane arrays
US7480430B2 (en) 2006-02-08 2009-01-20 Massachusetts Institute Of Technology Partial confinement photonic crystal waveguides
US7508050B1 (en) 2006-03-16 2009-03-24 Advanced Micro Devices, Inc. Negative differential resistance diode and SRAM utilizing such device
US7700975B2 (en) 2006-03-31 2010-04-20 Intel Corporation Schottky barrier metal-germanium contact in metal-germanium-metal photodetectors
US7875871B2 (en) 2006-03-31 2011-01-25 Sandisk 3D Llc Heterojunction device comprising a semiconductor and a resistivity-switching oxide or nitride
US7613369B2 (en) 2006-04-13 2009-11-03 Luxtera, Inc. Design of CMOS integrated germanium photodiodes
US7566875B2 (en) 2006-04-13 2009-07-28 Integrated Micro Sensors Inc. Single-chip monolithic dual-band visible- or solar-blind photodetector
US20070262296A1 (en) 2006-05-11 2007-11-15 Matthias Bauer Photodetectors employing germanium layers
US7943471B1 (en) 2006-05-15 2011-05-17 Globalfoundries Inc. Diode with asymmetric silicon germanium anode
US7718965B1 (en) 2006-08-03 2010-05-18 L-3 Communications Corporation Microbolometer infrared detector elements and methods for forming same
WO2008030468A2 (en) 2006-09-07 2008-03-13 Massachusetts Institute Of Technology Microphotonic waveguide including core/cladding interface layer
US7651880B2 (en) 2006-11-04 2010-01-26 Sharp Laboratories Of America, Inc. Ge short wavelength infrared imager
WO2008073967A1 (en) 2006-12-13 2008-06-19 Massachusetts Institute Of Technology Mode transformers for low index high confinement waveguides
JP4996938B2 (ja) 2007-02-16 2012-08-08 株式会社日立製作所 半導体発光素子
TW200837965A (en) 2007-03-05 2008-09-16 Univ Nat Taiwan Photodetector
TWI360232B (en) 2007-06-12 2012-03-11 Univ Nat Taiwan Method for manufacturing photodetector
JP2008311457A (ja) 2007-06-15 2008-12-25 Renesas Technology Corp 半導体装置の製造方法
US7537968B2 (en) 2007-06-19 2009-05-26 Sandisk 3D Llc Junction diode with reduced reverse current
US8072791B2 (en) 2007-06-25 2011-12-06 Sandisk 3D Llc Method of making nonvolatile memory device containing carbon or nitrogen doped diode
US7514751B2 (en) 2007-08-02 2009-04-07 National Semiconductor Corporation SiGe DIAC ESD protection structure
US8787774B2 (en) 2007-10-10 2014-07-22 Luxtera, Inc. Method and system for a narrowband, non-linear optoelectronic receiver
US7994066B1 (en) 2007-10-13 2011-08-09 Luxtera, Inc. Si surface cleaning for semiconductor circuits
US7736934B2 (en) 2007-10-19 2010-06-15 Bae Systems Information And Electronic Systems Integration Inc. Method for manufacturing vertical germanium detectors
US8343792B2 (en) 2007-10-25 2013-01-01 Bae Systems Information And Electronic Systems Integration Inc. Method for manufacturing lateral germanium detectors
US7790495B2 (en) 2007-10-26 2010-09-07 International Business Machines Corporation Optoelectronic device with germanium photodetector
US7723206B2 (en) 2007-12-05 2010-05-25 Fujifilm Corporation Photodiode
US7659627B2 (en) 2007-12-05 2010-02-09 Fujifilm Corporation Photodiode
US8078063B2 (en) 2008-02-05 2011-12-13 Finisar Corporation Monolithic power monitor and wavelength detector
US7902620B2 (en) 2008-08-14 2011-03-08 International Business Machines Corporation Suspended germanium photodetector for silicon waveguide
JP5232981B2 (ja) 2008-03-07 2013-07-10 日本電気株式会社 SiGeフォトダイオード
US8260151B2 (en) * 2008-04-18 2012-09-04 Freescale Semiconductor, Inc. Optical communication integration
US7737534B2 (en) 2008-06-10 2010-06-15 Northrop Grumman Systems Corporation Semiconductor devices that include germanium nanofilm layer disposed within openings of silicon dioxide layer
US8168939B2 (en) 2008-07-09 2012-05-01 Luxtera, Inc. Method and system for a light source assembly supporting direct coupling to an integrated circuit
US20100006961A1 (en) 2008-07-09 2010-01-14 Analog Devices, Inc. Recessed Germanium (Ge) Diode
US8877616B2 (en) 2008-09-08 2014-11-04 Luxtera, Inc. Method and system for monolithic integration of photonics and electronics in CMOS processes
US8238014B2 (en) 2008-09-08 2012-08-07 Luxtera Inc. Method and circuit for encoding multi-level pulse amplitude modulated signals using integrated optoelectronic devices
WO2010033641A1 (en) 2008-09-16 2010-03-25 Arizona Board of Regents, a body corporate acting for and on behalf of Arizona State University Gesn infrared photodetectors
KR101000941B1 (ko) 2008-10-27 2010-12-13 한국전자통신연구원 게르마늄 광 검출기 및 그 형성방법
US7916377B2 (en) 2008-11-03 2011-03-29 Luxtera, Inc. Integrated control system for laser and Mach-Zehnder interferometer
WO2010055750A1 (ja) 2008-11-12 2010-05-20 株式会社日立製作所 発光素子並びに受光素子及びその製造方法
US8188512B2 (en) 2008-12-03 2012-05-29 Electronics And Telecommunications Research Institute Growth of germanium epitaxial thin film with negative photoconductance characteristics and photodiode using the same
EP2214042B1 (en) 2009-02-02 2015-03-11 Commissariat à l'Énergie Atomique et aux Énergies Alternatives Method of producing a photonic device and corresponding photonic device
US8798476B2 (en) 2009-02-18 2014-08-05 Luxtera, Inc. Method and system for single laser bidirectional links
JP5428400B2 (ja) 2009-03-04 2014-02-26 ソニー株式会社 固体撮像装置、および、その製造方法、電子機器
JP5463760B2 (ja) * 2009-07-02 2014-04-09 三菱電機株式会社 光導波路集積型半導体光素子およびその製造方法
US8358940B2 (en) 2009-07-10 2013-01-22 Luxtera Inc. Method and system for optoelectronic receivers for uncoded data
US20110027950A1 (en) 2009-07-28 2011-02-03 Jones Robert E Method for forming a semiconductor device having a photodetector
US8592745B2 (en) 2009-08-19 2013-11-26 Luxtera Inc. Method and system for optoelectronic receivers utilizing waveguide heterojunction phototransistors integrated in a CMOS SOI wafer
US8289067B2 (en) 2009-09-14 2012-10-16 Luxtera Inc. Method and system for bandwidth enhancement using hybrid inductors
DK2483925T3 (en) 2009-09-29 2018-08-20 Res Triangle Inst QUANTITY POINT FILLER TRANSITION BASED PHOTO DETECTORS
US8319237B2 (en) 2009-12-31 2012-11-27 Intel Corporation Integrated optical receiver architecture for high speed optical I/O applications
US8649639B2 (en) 2010-03-04 2014-02-11 Luxtera, Inc. Method and system for waveguide mode filters
US8625935B2 (en) 2010-06-15 2014-01-07 Luxtera, Inc. Method and system for integrated power combiners
US8304272B2 (en) 2010-07-02 2012-11-06 International Business Machines Corporation Germanium photodetector
US8471639B2 (en) 2010-07-06 2013-06-25 Luxtera Inc. Method and system for a feedback transimpedance amplifier with sub-40khz low-frequency cutoff
FR2966976B1 (fr) 2010-11-03 2016-07-29 Commissariat Energie Atomique Imageur monolithique multispectral visible et infrarouge
FR2966977B1 (fr) 2010-11-03 2016-02-26 Commissariat Energie Atomique Detecteur de rayonnement visible et proche infrarouge
CN102465336B (zh) 2010-11-05 2014-07-09 上海华虹宏力半导体制造有限公司 一种高锗浓度的锗硅外延方法
EP2641276A2 (en) 2010-11-19 2013-09-25 The Arizona Board Of Regents, A Body Corporate Of The State Of Arizona Acting For And Behalf Of Dilute sn-doped ge alloys
US8633067B2 (en) 2010-11-22 2014-01-21 International Business Machines Corporation Fabricating photonics devices fully integrated into a CMOS manufacturing process
US8803068B2 (en) 2011-01-26 2014-08-12 Maxim Integrated Products, Inc. Light sensor having a contiguous IR suppression filter and a transparent substrate
US8354282B2 (en) 2011-01-31 2013-01-15 Alvin Gabriel Stern Very high transmittance, back-illuminated, silicon-on-sapphire semiconductor wafer substrate for high quantum efficiency and high resolution, solid-state, imaging focal plane arrays
JP5969811B2 (ja) 2011-05-09 2016-08-17 アイメックImec シリコン・フォトニクスプラットフォーム上でのフォトニックデバイスの共集積化方法
US8399949B2 (en) 2011-06-30 2013-03-19 Micron Technology, Inc. Photonic systems and methods of forming photonic systems
US9653639B2 (en) 2012-02-07 2017-05-16 Apic Corporation Laser using locally strained germanium on silicon for opto-electronic applications
US9110221B2 (en) 2012-02-10 2015-08-18 Massachusetts Institute Of Technology Athermal photonic waveguide with refractive index tuning
US8772899B2 (en) 2012-03-01 2014-07-08 Taiwan Semiconductor Manufacturing Company, Ltd. Method and apparatus for backside illumination sensor
US8866247B2 (en) 2012-03-29 2014-10-21 Intel Corporation Photonic device with a conductive shunt layer
US9091827B2 (en) 2012-07-09 2015-07-28 Luxtera, Inc. Method and system for grating couplers incorporating perturbed waveguides
US9105772B2 (en) 2012-07-30 2015-08-11 Bae Systems Information And Electronic Systems Integration Inc. In-line germanium avalanche photodetector
US8723125B1 (en) 2012-11-06 2014-05-13 Laxense Inc. Waveguide end-coupled infrared detector
CN103000650B (zh) 2012-12-10 2015-07-29 复旦大学 近红外-可见光可调图像传感器及其制造方法
US8802484B1 (en) 2013-01-22 2014-08-12 Globalfoundries Singapore Pte. Ltd. Integration of germanium photo detector in CMOS processing
US20140206190A1 (en) 2013-01-23 2014-07-24 International Business Machines Corporation Silicide Formation in High-Aspect Ratio Structures
US9046650B2 (en) 2013-03-12 2015-06-02 The Massachusetts Institute Of Technology Methods and apparatus for mid-infrared sensing
US9360623B2 (en) 2013-12-20 2016-06-07 The Regents Of The University Of California Bonding of heterogeneous material grown on silicon to a silicon photonic circuit
US9864138B2 (en) 2015-01-05 2018-01-09 The Research Foundation For The State University Of New York Integrated photonics including germanium
US9874693B2 (en) 2015-06-10 2018-01-23 The Research Foundation For The State University Of New York Method and structure for integrating photonics with CMOs
US10042115B2 (en) 2016-04-19 2018-08-07 Stmicroelectronics (Crolles 2) Sas Electro-optic device with multiple photonic layers and related methods
US10761266B2 (en) * 2016-06-03 2020-09-01 The Regents Of The University Of California Integration of direct-bandgap optically active devices on indirect-bandgap-based substrates
CN109642985B (zh) 2016-07-13 2021-03-12 洛克利光子有限公司 模式转换器及其制造方法
US10976491B2 (en) * 2016-11-23 2021-04-13 The Research Foundation For The State University Of New York Photonics interposer optoelectronics
TWI686943B (zh) 2016-11-23 2020-03-01 紐約州立大學研究基金會 具有光子中介層的光電系統
US10698156B2 (en) 2017-04-27 2020-06-30 The Research Foundation For The State University Of New York Wafer scale bonded active photonics interposer
EP3467973A1 (en) * 2017-10-04 2019-04-10 IMEC vzw Active-passive waveguide photonic system
US10877300B2 (en) 2018-04-04 2020-12-29 The Research Foundation For The State University Of New York Heterogeneous structure on an integrated photonics platform
US10816724B2 (en) 2018-04-05 2020-10-27 The Research Foundation For The State University Of New York Fabricating photonics structure light signal transmission regions
US11029466B2 (en) 2018-11-21 2021-06-08 The Research Foundation For The State University Of New York Photonics structure with integrated laser
US11550099B2 (en) 2018-11-21 2023-01-10 The Research Foundation For The State University Of New York Photonics optoelectrical system

Also Published As

Publication number Publication date
TWI829761B (zh) 2024-01-21
US11029466B2 (en) 2021-06-08
JP2022509947A (ja) 2022-01-25
TW202029602A (zh) 2020-08-01
EP3884321A1 (en) 2021-09-29
US20200166703A1 (en) 2020-05-28
KR20220002239A (ko) 2022-01-06

Similar Documents

Publication Publication Date Title
SG11202105177SA (en) Photonics structure with integrated laser
GB201718395D0 (en) Optical fiber
CA185679S (en) Light
GB2558725B (en) Optical fiber
GB2577218B (en) Integrated WDM optical transceiver
GB2574317B (en) Optical fiber
EP3104201A4 (en) Structure for eliminating excess light, and fiber laser
CA188602S (en) Optical structure
GB2556987B (en) Cladding glass for solid-state lasers
GB2557000B (en) Optical Fiber
CA200485S (en) Optical structure
CA187450S (en) Light
CA187452S (en) Light
CA187451S (en) Light
SG10201904874XA (en) Photodetector with sequential asymmetric-width waveguides
GB201909618D0 (en) Optical fiber
EP3365719A4 (en) ATHERMIC OPTICAL ASSEMBLY
GB2574883B (en) Optical fiber
IL274329A (en) Hollow waveguide laser
GB2559283B (en) An optical waveguide crosspoint
GB2564697B (en) Optical fibre
AU201816632S (en) Laser level
GB2576788B (en) Cladding
KR102389943B9 (ko) 레이저
GB201810468D0 (en) Optical fiber