SG11201901887UA - Process for the generation of metal-containing films - Google Patents

Process for the generation of metal-containing films

Info

Publication number
SG11201901887UA
SG11201901887UA SG11201901887UA SG11201901887UA SG11201901887UA SG 11201901887U A SG11201901887U A SG 11201901887UA SG 11201901887U A SG11201901887U A SG 11201901887UA SG 11201901887U A SG11201901887U A SG 11201901887UA SG 11201901887U A SG11201901887U A SG 11201901887UA
Authority
SG
Singapore
Prior art keywords
international
group
metal
basf
pct
Prior art date
Application number
SG11201901887UA
Inventor
David Dominique Schweinfurth
Falko Abels
Lukas Mayr
Daniel Loeffler
Daniel Waldmann
Original Assignee
Basf Se
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Basf Se filed Critical Basf Se
Publication of SG11201901887UA publication Critical patent/SG11201901887UA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56—After-treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5846—Reactive treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C23C16/45534—Use of auxiliary reactants other than used for contributing to the composition of the main film, e.g. catalysts, activators or scavengers

Abstract

RSi—A R 2 Ri) (la) R 3 Si—A A—SiR 3 (I b) R R 'Si A' 'A R 1) ( R 2 (IC) R R R 1) \ R 2 (Id) R 3 Si 2 A R (11a) R 3 Si—A R (lib) R R A' SL A (11c) R 3 Si R 3 A R 4 (12) INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property Organization International Bureau (43) International Publication Date 19 April 2018 (19.04.2018) WIP0 1 PCT o Ell to otiolo 01110111110 111110 ow (10) International Publication Number WO 2018/069130 Al (51) International Patent Classification: C23C 14/58 (2006.01) C23C 16/56 (2006.01) C23C 16/455 (2006.01) (21) International Application Number: PCT/EP2017/075304 (22) International Filing Date: 05 October 2017 (05.10.2017) (25) Filing Language: English (26) Publication Language: English (30) Priority Data: 16193697.6 13 October 2016 (13.10.2016) EP (71) Applicant: BASF SE [DE/DE]; Carl-Bosch-Strasse 38, 67056 Ludwigshafen am Rhein (DE). (72) Inventors: SCHWEINFURTH, David Dominique; Sude- tenstr. 17, 64319 Pfungstadt (DE). ABELS, Falko; Guten- bergstrasse 2a, 67354 Roemerberg (DE). MAYR, Lukas; Gontardstrasse 25, 68163 Mannheim (DE). LOEFFLER, Daniel; Heinrich Heine Str. 2b, 67134 Birkenheide (DE). WALDMANN, Daniel; Eulerweg 16a, 67245 Lambsheim (DE). (74) Agent: BASF IP ASSOCIATION; BASF SE, G-FLP - 0006, 67056 Ludwigshafen (DE). (81) Designated States (unless otherwise indicated, for every kind of national protection available): AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. (84) Designated States (unless otherwise indicated, for every kind of regional protection available): ARIPO (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, TJ, TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG). Published: with international search report (Art. 21(3)) (54) Title: PROCESS FOR THE GENERATION OF METAL-CONTAINING FILMS (57) : The present invention is in the field of processes for the generation of thin inorganic films on substrates, in particular atomic layer deposition processes. It relates to a process for preparing metal films comprising (a) depositing a metal-containing com- pound from the gaseous state onto a solid substrate and (b) bringing the solid substrate with the deposited metal-containing compound in contact with a compound of general formula (la), (lb), (lc), (Id), (11a), (lib), (lie), or (lid) wherein A is 0 or NRN, R and R N is hydrogen, an alkyl group, an alkenyl group, an aryl group, or a silyl group, R 1 , R 2 , R 3 , and R is hydrogen, an alkyl group, an alkenyl group, an 4 aryl group, a silyl group, or an ester group, and E is nothing, oxygen, methylene, ethylene, or 1,3-propylene.
SG11201901887UA 2016-10-13 2017-10-05 Process for the generation of metal-containing films SG11201901887UA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP16193697 2016-10-13
PCT/EP2017/075304 WO2018069130A1 (en) 2016-10-13 2017-10-05 Process for the generation of metal-containing films

Publications (1)

Publication Number Publication Date
SG11201901887UA true SG11201901887UA (en) 2019-04-29

Family

ID=57226755

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201901887UA SG11201901887UA (en) 2016-10-13 2017-10-05 Process for the generation of metal-containing films

Country Status (9)

Country Link
US (1) US20190360096A1 (en)
EP (1) EP3526363A1 (en)
JP (1) JP2019532184A (en)
KR (1) KR20190066048A (en)
CN (1) CN109844172A (en)
IL (1) IL265868A (en)
SG (1) SG11201901887UA (en)
TW (1) TW201829833A (en)
WO (1) WO2018069130A1 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20200111181A (en) 2017-12-20 2020-09-28 바스프 에스이 Method for producing a metal-containing film
CN113939609A (en) * 2019-06-06 2022-01-14 巴斯夫欧洲公司 Method for forming metal or semi-metal containing film
SG11202113376YA (en) * 2019-06-06 2021-12-30 Basf Se Process for the generation of metal- or semimetal-containing films
EP4061979A1 (en) * 2019-11-22 2022-09-28 Basf Se Process for the generation of metal- or semimetal-containing films

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4316883C2 (en) * 1993-05-19 1996-01-25 Michael Dr Denk Silylene, process for the production of silylene or carbene and the use of silylene
US5389401A (en) * 1994-02-23 1995-02-14 Gordon; Roy G. Chemical vapor deposition of metal oxides
WO2006033731A2 (en) * 2004-08-16 2006-03-30 E.I. Dupont De Nemours And Company Atomic layer deposition of copper using surface-activating agents
BRPI0814111A2 (en) 2007-07-16 2015-02-03 Hoffmann La Roche CYTOTOXIC MONOCLONAL ANTIBODY
US8765223B2 (en) * 2008-05-08 2014-07-01 Air Products And Chemicals, Inc. Binary and ternary metal chalcogenide materials and method of making and using same
JP5707768B2 (en) 2010-07-30 2015-04-30 ブラザー工業株式会社 Image forming apparatus
CA2863432A1 (en) 2012-02-01 2013-08-08 Sfc Koenig Ag Element, preferably a closure element for inserting into a bore in a component
US9157149B2 (en) * 2013-06-28 2015-10-13 Wayne State University Bis(trimethylsilyl) six-membered ring systems and related compounds as reducing agents for forming layers on a substrate
EP2857550A1 (en) * 2013-10-02 2015-04-08 Basf Se Amine precursors for depositing graphene

Also Published As

Publication number Publication date
KR20190066048A (en) 2019-06-12
TW201829833A (en) 2018-08-16
WO2018069130A1 (en) 2018-04-19
CN109844172A (en) 2019-06-04
US20190360096A1 (en) 2019-11-28
JP2019532184A (en) 2019-11-07
IL265868A (en) 2019-06-30
EP3526363A1 (en) 2019-08-21

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