SG11201407650VA - Composition and process for stripping photoresist from a surface including titanium nitride - Google Patents
Composition and process for stripping photoresist from a surface including titanium nitrideInfo
- Publication number
- SG11201407650VA SG11201407650VA SG11201407650VA SG11201407650VA SG11201407650VA SG 11201407650V A SG11201407650V A SG 11201407650VA SG 11201407650V A SG11201407650V A SG 11201407650VA SG 11201407650V A SG11201407650V A SG 11201407650VA SG 11201407650V A SG11201407650V A SG 11201407650VA
- Authority
- SG
- Singapore
- Prior art keywords
- international
- danbury
- low
- compositions
- titanium nitride
- Prior art date
Links
- 239000000203 mixture Substances 0.000 title abstract 5
- 229920002120 photoresistant polymer Polymers 0.000 title abstract 4
- 238000000034 method Methods 0.000 title abstract 3
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 title abstract 2
- 239000000463 material Substances 0.000 abstract 4
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 abstract 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 239000002253 acid Substances 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 238000004377 microelectronic Methods 0.000 abstract 1
- 230000008520 organization Effects 0.000 abstract 1
- 229910052698 phosphorus Inorganic materials 0.000 abstract 1
- 239000011574 phosphorus Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/02—Inorganic compounds ; Elemental compounds
- C11D3/04—Water-soluble compounds
- C11D3/042—Acids
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/36—Organic compounds containing phosphorus
- C11D3/364—Organic compounds containing phosphorus containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Wood Science & Technology (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Organic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- General Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Inorganic Chemistry (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Manufacturing Of Steel Electrode Plates (AREA)
- Cleaning And De-Greasing Of Metallic Materials By Chemical Methods (AREA)
Abstract
(12) INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property Organization International Bureau (43) International Publication Date 21 November 2013 (21.11.2013) WIPOIPCT (10) International Publication Number WO 2013/173738 A1 (51) International Patent Classification: G03F 7/42 (2006.01) H01L 21/027 (2006.01) G03F 7/32 (2006.01) B08B 3/00 (2006.01) (21) International Application Number: (22) International Filing Date: (25) Filing Language: (26) Publication Language: PCT/US2013/041629 17 May 2013 (17.05.2013) English (30) Priority Data: 61/648,951 18 May 2012 (18.05.2012) English US (71) Applicant: ADVANCED TECHNOLOGY MATERI ALS, INC. [US/US]; 7 Commerce Drive, Danbury, Con necticut 06810 (US). (72) Inventors: COOPER, Emanuel I.; 25 Atherstone Road, Scarsdale, New York 10583 (US). CONNER, Marc; 7 Commerce Drive, Danbury, Connecticut 06810 (US). OWENS, Michael; 7 Commerce Drive, Danbury, Con necticut 06810 (US). (74) Agent: FUIERER, Tristan; Moore & Van Allen, PLLC, P.O. Box 13706, Research Triangle Park, North Carolina 27709 (US). (81) Designated States (unless otherwise indicated, for every kind of national protection available)'. AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. (84) Designated States (unless otherwise indicated, for every kind of regional protection available)'. ARIPO (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, TJ, TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG). Published: — with international search report (Art. 21(3)) (54) Title: COMPOSITION AND PROCESS FOR STRIPPING PHOTORESIST FROM A SURFACE INCLUDING TITANIUM NITRIDE 00 m i> m i> i-H cn I'D BE • G = H pattern features FIGURE 1 ® (57) Abstract: A method and low pH compositions for removing bulk and/or hardened photoresist material from microelectronic ^ devices have been developed. The low pH compositions include sulfuric acid and at least one phosphorus-containing acid. The low Q pH compositions effectively remove the hardened photoresist material while not damaging the underlying silicon-containing layer(s) or the metal gate materials.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201261648951P | 2012-05-18 | 2012-05-18 | |
| PCT/US2013/041629 WO2013173738A1 (en) | 2012-05-18 | 2013-05-17 | Composition and process for stripping photoresist from a surface including titanium nitride |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG11201407650VA true SG11201407650VA (en) | 2014-12-30 |
Family
ID=49584341
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG11201407650VA SG11201407650VA (en) | 2012-05-18 | 2013-05-17 | Composition and process for stripping photoresist from a surface including titanium nitride |
| SG10201610541UA SG10201610541UA (en) | 2012-05-18 | 2013-05-17 | Composition and process for stripping photoresist from a surface including titanium nitride |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG10201610541UA SG10201610541UA (en) | 2012-05-18 | 2013-05-17 | Composition and process for stripping photoresist from a surface including titanium nitride |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US9678430B2 (en) |
| EP (1) | EP2850495A4 (en) |
| JP (1) | JP2015517691A (en) |
| KR (1) | KR20150016574A (en) |
| CN (1) | CN104487900B (en) |
| SG (2) | SG11201407650VA (en) |
| TW (1) | TW201406932A (en) |
| WO (1) | WO2013173738A1 (en) |
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| SG10201706443QA (en) | 2013-03-04 | 2017-09-28 | Entegris Inc | Compositions and methods for selectively etching titanium nitride |
| WO2014197808A1 (en) | 2013-06-06 | 2014-12-11 | Advanced Technology Materials, Inc. | Compositions and methods for selectively etching titanium nitride |
| EP3027709A4 (en) | 2013-07-31 | 2017-03-29 | Entegris, Inc. | AQUEOUS FORMULATIONS FOR REMOVING METAL HARD MASK AND POST-ETCH RESIDUE WITH Cu/W COMPATIBILITY |
| US10428271B2 (en) | 2013-08-30 | 2019-10-01 | Entegris, Inc. | Compositions and methods for selectively etching titanium nitride |
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| TWI654340B (en) | 2013-12-16 | 2019-03-21 | 美商恩特葛瑞斯股份有限公司 | Ni:NiGe:Ge SELECTIVE ETCH FORMULATIONS AND METHOD OF USING SAME |
| JP6776125B2 (en) | 2013-12-20 | 2020-10-28 | インテグリス・インコーポレーテッド | Use of non-oxidizing strong acids for removal of ion-implanted resists |
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| CN113479860B (en) * | 2021-07-01 | 2023-08-11 | 中国石油大学(华东) | SbPO (styrene-ethylene-propylene-diene monomer) 4 Preparation method of nitrogen-doped carbon composite material |
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-
2013
- 2013-05-17 TW TW102117505A patent/TW201406932A/en unknown
- 2013-05-17 CN CN201380038401.XA patent/CN104487900B/en not_active Expired - Fee Related
- 2013-05-17 EP EP13791286.1A patent/EP2850495A4/en not_active Withdrawn
- 2013-05-17 SG SG11201407650VA patent/SG11201407650VA/en unknown
- 2013-05-17 KR KR1020147035464A patent/KR20150016574A/en active IP Right Grant
- 2013-05-17 US US14/401,732 patent/US9678430B2/en not_active Expired - Fee Related
- 2013-05-17 SG SG10201610541UA patent/SG10201610541UA/en unknown
- 2013-05-17 JP JP2015512891A patent/JP2015517691A/en active Pending
- 2013-05-17 WO PCT/US2013/041629 patent/WO2013173738A1/en active Application Filing
Also Published As
| Publication number | Publication date |
|---|---|
| CN104487900A (en) | 2015-04-01 |
| WO2013173738A1 (en) | 2013-11-21 |
| JP2015517691A (en) | 2015-06-22 |
| CN104487900B (en) | 2019-07-23 |
| KR20150016574A (en) | 2015-02-12 |
| SG10201610541UA (en) | 2017-01-27 |
| TW201406932A (en) | 2014-02-16 |
| US9678430B2 (en) | 2017-06-13 |
| EP2850495A4 (en) | 2016-01-20 |
| US20150168843A1 (en) | 2015-06-18 |
| EP2850495A1 (en) | 2015-03-25 |
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