SG11201901301SA - Mask blank, phase shift mask, method of manufacturing phase shift mask, and method of manufacturing semiconductor device - Google Patents
Mask blank, phase shift mask, method of manufacturing phase shift mask, and method of manufacturing semiconductor deviceInfo
- Publication number
- SG11201901301SA SG11201901301SA SG11201901301SA SG11201901301SA SG11201901301SA SG 11201901301S A SG11201901301S A SG 11201901301SA SG 11201901301S A SG11201901301S A SG 11201901301SA SG 11201901301S A SG11201901301S A SG 11201901301SA SG 11201901301S A SG11201901301S A SG 11201901301SA
- Authority
- SG
- Singapore
- Prior art keywords
- phase shift
- transmission layer
- high transmission
- shift film
- mask
- Prior art date
Links
- 230000010363 phase shift Effects 0.000 title abstract 7
- 238000004519 manufacturing process Methods 0.000 title 2
- 239000004065 semiconductor Substances 0.000 title 1
- 230000005540 biological transmission Effects 0.000 abstract 10
- 239000010410 layer Substances 0.000 abstract 8
- 239000000463 material Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 238000002834 transmittance Methods 0.000 abstract 2
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 1
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 1
- 239000002356 single layer Substances 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
- G03F1/58—Absorbers, e.g. of opaque materials having two or more different absorber layers, e.g. stacked multilayer absorbers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/80—Etching
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70191—Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
- G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Plasma & Fusion (AREA)
- Health & Medical Sciences (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Physical Vapour Deposition (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016165518 | 2016-08-26 | ||
PCT/JP2017/028045 WO2018037864A1 (ja) | 2016-08-26 | 2017-08-02 | マスクブランク、位相シフトマスク、位相シフトマスクの製造方法及び半導体デバイスの製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201901301SA true SG11201901301SA (en) | 2019-03-28 |
Family
ID=61245795
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201901301SA SG11201901301SA (en) | 2016-08-26 | 2017-08-02 | Mask blank, phase shift mask, method of manufacturing phase shift mask, and method of manufacturing semiconductor device |
Country Status (7)
Country | Link |
---|---|
US (1) | US10942440B2 (ko) |
JP (2) | JP6328863B1 (ko) |
KR (1) | KR102341792B1 (ko) |
CN (1) | CN109643056B (ko) |
SG (1) | SG11201901301SA (ko) |
TW (1) | TWI760353B (ko) |
WO (1) | WO2018037864A1 (ko) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
SG11201911415VA (en) * | 2017-06-21 | 2020-01-30 | Hoya Corp | Substrate with multilayer reflective film, reflective mask blank, reflective mask, and method of manufacturing semiconductor device |
JP6557381B1 (ja) * | 2018-05-08 | 2019-08-07 | エスアンドエス テック カンパニー リミテッド | 位相反転ブランクマスク及びフォトマスク |
JP7109996B2 (ja) * | 2018-05-30 | 2022-08-01 | Hoya株式会社 | マスクブランク、位相シフトマスクおよび半導体デバイスの製造方法 |
JP6896694B2 (ja) * | 2018-12-25 | 2021-06-30 | Hoya株式会社 | マスクブランク、位相シフトマスク、位相シフトマスクの製造方法および半導体デバイスの製造方法 |
TWI707195B (zh) | 2020-02-14 | 2020-10-11 | 力晶積成電子製造股份有限公司 | 相位轉移光罩的製造方法 |
CN111636048B (zh) * | 2020-05-12 | 2021-05-07 | 清华大学 | 一种掩膜及其制造方法、二维材料薄膜图案制造方法 |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3115185B2 (ja) | 1993-05-25 | 2000-12-04 | 株式会社東芝 | 露光用マスクとパターン形成方法 |
KR0168134B1 (ko) | 1993-05-25 | 1999-01-15 | 사토 후미오 | 반사형 위상쉬프트 마스크와, 투과형 위상쉬프트 마스크 및, 패턴형성방법 |
JP3397933B2 (ja) | 1995-03-24 | 2003-04-21 | アルバック成膜株式会社 | 位相シフトフォトマスクブランクス、位相シフトフォトマスク、及びそれらの製造方法。 |
US6274280B1 (en) | 1999-01-14 | 2001-08-14 | E.I. Du Pont De Nemours And Company | Multilayer attenuating phase-shift masks |
JP2002296758A (ja) | 2001-03-30 | 2002-10-09 | Hoya Corp | ハーフトーン型位相シフトマスクブランク及びハーフトーン型位相シフトマスク |
DE10214092B4 (de) | 2001-03-30 | 2012-03-15 | Hoya Corp. | Halbton-Phasenverschiebungsmasken-Rohling und Halbton-Phasenverschiebungsmaske |
US6844119B2 (en) | 2002-07-30 | 2005-01-18 | Hoya Corporation | Method for producing a halftone phase shift mask blank, a halftone phase shift mask blank and halftone phase shift mask |
JP4525893B2 (ja) | 2003-10-24 | 2010-08-18 | 信越化学工業株式会社 | 位相シフトマスクブランク、位相シフトマスク及びパターン転写方法 |
JP2005208660A (ja) | 2004-01-22 | 2005-08-04 | Schott Ag | 超高透過率の位相シフト型のマスクブランク |
TWI348590B (en) * | 2004-03-31 | 2011-09-11 | Shinetsu Chemical Co | Halftone phase shift mask blank, halftone phase shift mask, and pattern transfer method |
US7455937B2 (en) | 2004-12-03 | 2008-11-25 | Micron Technology, Inc. | Reticles and methods of forming reticles |
WO2014112457A1 (ja) * | 2013-01-15 | 2014-07-24 | Hoya株式会社 | マスクブランク、位相シフトマスクおよびこれらの製造方法 |
JP6005530B2 (ja) * | 2013-01-15 | 2016-10-12 | Hoya株式会社 | マスクブランク、位相シフトマスクおよびこれらの製造方法 |
JP6373607B2 (ja) * | 2013-03-08 | 2018-08-15 | Hoya株式会社 | マスクブランクの製造方法および位相シフトマスクの製造方法 |
JP6264238B2 (ja) | 2013-11-06 | 2018-01-24 | 信越化学工業株式会社 | ハーフトーン位相シフト型フォトマスクブランク、ハーフトーン位相シフト型フォトマスク及びパターン露光方法 |
KR101887323B1 (ko) * | 2014-03-18 | 2018-08-09 | 호야 가부시키가이샤 | 마스크 블랭크, 위상 시프트 마스크 및 반도체 디바이스의 제조 방법 |
JP6153894B2 (ja) * | 2014-07-11 | 2017-06-28 | Hoya株式会社 | マスクブランク、位相シフトマスク、位相シフトマスクの製造方法及び半導体デバイスの製造方法 |
JP2016035559A (ja) | 2014-08-04 | 2016-03-17 | 信越化学工業株式会社 | ハーフトーン位相シフト型フォトマスクブランク及びその製造方法 |
-
2017
- 2017-08-02 CN CN201780050888.1A patent/CN109643056B/zh active Active
- 2017-08-02 US US16/327,716 patent/US10942440B2/en active Active
- 2017-08-02 JP JP2017563152A patent/JP6328863B1/ja active Active
- 2017-08-02 WO PCT/JP2017/028045 patent/WO2018037864A1/ja active Application Filing
- 2017-08-02 KR KR1020197003050A patent/KR102341792B1/ko active IP Right Grant
- 2017-08-02 SG SG11201901301SA patent/SG11201901301SA/en unknown
- 2017-08-10 TW TW106127035A patent/TWI760353B/zh active
-
2018
- 2018-04-13 JP JP2018077550A patent/JP6999482B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
JP6999482B2 (ja) | 2022-01-18 |
KR20190041461A (ko) | 2019-04-22 |
CN109643056A (zh) | 2019-04-16 |
KR102341792B1 (ko) | 2021-12-21 |
TWI760353B (zh) | 2022-04-11 |
US20190187551A1 (en) | 2019-06-20 |
TW201820025A (zh) | 2018-06-01 |
JP2018141996A (ja) | 2018-09-13 |
CN109643056B (zh) | 2022-05-03 |
JPWO2018037864A1 (ja) | 2018-08-30 |
US10942440B2 (en) | 2021-03-09 |
WO2018037864A1 (ja) | 2018-03-01 |
JP6328863B1 (ja) | 2018-05-23 |
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