TW200736819A - Four-gradation photomask manufacturing method and photomask blank for use therein - Google Patents

Four-gradation photomask manufacturing method and photomask blank for use therein

Info

Publication number
TW200736819A
TW200736819A TW096106057A TW96106057A TW200736819A TW 200736819 A TW200736819 A TW 200736819A TW 096106057 A TW096106057 A TW 096106057A TW 96106057 A TW96106057 A TW 96106057A TW 200736819 A TW200736819 A TW 200736819A
Authority
TW
Taiwan
Prior art keywords
etching
light
photomask
manufacturing
gradation
Prior art date
Application number
TW096106057A
Other languages
Chinese (zh)
Other versions
TWI432885B (en
Inventor
Michiaki Sano
Original Assignee
Hoya Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoya Corp filed Critical Hoya Corp
Publication of TW200736819A publication Critical patent/TW200736819A/en
Application granted granted Critical
Publication of TWI432885B publication Critical patent/TWI432885B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G03F1/58—Absorbers, e.g. of opaque materials having two or more different absorber layers, e.g. stacked multilayer absorbers
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/1303—Apparatus specially adapted to the manufacture of LCDs
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/1306—Details
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G03F7/2059—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam
    • G03F7/2063—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam for the production of exposure masks or reticles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Nonlinear Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Inorganic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

According to a manufacturing method of this invention, a first light-semitransmitting film and a light-shielding film made of materials each having an etching resistance to etching of the other are formed in the order named on a transparent substrate and, on this light-shielding film, there is formed a second light-semitransmitting film preferably made of a material that can be etched by the same etching as that of the light-shielding film. Accordingly, by the combination of the films each having the etching resistance to the etching of the other and the films each having no etching resistance to the etching of the other, a four-gradation photomask can be manufactured with a reduced number of times of writing by the photolithography.
TW096106057A 2006-02-20 2007-02-16 Four-gradation photomask manufacturing method and photomask blank for use therein TWI432885B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006043011 2006-02-20

Publications (2)

Publication Number Publication Date
TW200736819A true TW200736819A (en) 2007-10-01
TWI432885B TWI432885B (en) 2014-04-01

Family

ID=38612597

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096106057A TWI432885B (en) 2006-02-20 2007-02-16 Four-gradation photomask manufacturing method and photomask blank for use therein

Country Status (4)

Country Link
JP (1) JP4642140B2 (en)
KR (3) KR101100522B1 (en)
CN (2) CN101025564B (en)
TW (1) TWI432885B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI505018B (en) * 2012-06-29 2015-10-21 S&S Tech Co Ltd Blankmask and method for fabricating photomask using the same

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8216745B2 (en) * 2007-11-01 2012-07-10 Ulvac Coating Corporation Half-tone mask, half-tone mask blank and method for manufacturing half-tone mask
JP4714311B2 (en) * 2008-02-28 2011-06-29 Ｈｏｙａ株式会社 Multi-tone photomask manufacturing method and pattern transfer method for thin film transistor substrate
JP2010044149A (en) * 2008-08-11 2010-02-25 Hoya Corp Multi-gradation photomask, pattern transfer method, and manufacturing method of display unit using multi-gradation photomask
JP5121020B2 (en) * 2008-09-26 2013-01-16 Ｈｏｙａ株式会社 Multi-tone photomask, photomask blank, and pattern transfer method
TW201030451A (en) * 2008-09-30 2010-08-16 Hoya Corp Multi-tone photomask and method of manufacturing the same
KR101186890B1 (en) * 2009-05-21 2012-10-02 엘지이노텍 주식회사 Half tone mask and method of manufacturig the same
JP2011027878A (en) * 2009-07-23 2011-02-10 Hoya Corp Multi-gradation photomask, method of manufacturing the same, and pattern transfer method
TWI422966B (en) * 2009-07-30 2014-01-11 Hoya Corp Multitone photomask, photomask blank, method of manufacturing the multitone photomask, and pattern transfer method
JP5635577B2 (en) * 2012-09-26 2014-12-03 Hoya株式会社 Photomask manufacturing method, photomask, pattern transfer method, and flat panel display manufacturing method
KR102093101B1 (en) * 2014-08-25 2020-04-14 (주)에스앤에스텍 Multi-gray scale photomask and manufacturing method thereof
JP6726553B2 (en) * 2015-09-26 2020-07-22 Hoya株式会社 Photomask manufacturing method and display device manufacturing method
US20180160777A1 (en) 2016-12-14 2018-06-14 Black Brass, Inc. Foot measuring and sizing application
KR102339381B1 (en) 2017-01-06 2021-12-15 나이키 이노베이트 씨.브이. System, platform and method for personalized shopping using an automated shopping assistant
KR102649617B1 (en) 2017-06-27 2024-03-19 나이키 이노베이트 씨.브이. Systems, platforms and methods for personalized shopping using automated shopping assistants
CN109188854B (en) * 2018-10-18 2020-06-09 合肥鑫晟光电科技有限公司 Mask plate, display substrate, manufacturing method of display substrate and display device
JP2023528376A (en) 2020-05-29 2023-07-04 ナイキ イノベイト シーブイ Captured image processing system and method

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JPH09146259A (en) * 1995-08-29 1997-06-06 Ricoh Opt Ind Co Ltd Gradation mask and its production and method for generating special surface shape by using gradation mask
JPH1115134A (en) * 1997-06-26 1999-01-22 Hitachi Ltd Photo mask and pattern forming method using the same
KR100560969B1 (en) * 1998-12-31 2006-06-23 삼성전자주식회사 Manufacturing method of optical mask for liquid crystal display device
CN1379461A (en) * 2001-03-30 2002-11-13 华邦电子股份有限公司 Double-embedding technology for internal connection line structure
JP2003029393A (en) * 2001-07-12 2003-01-29 Matsushita Electric Ind Co Ltd Mask, pattern forming method using the same, and lithography
JP2003121978A (en) * 2001-10-12 2003-04-23 Hoya Corp Method for fabricating halftone phase shifting mask
JP3984116B2 (en) * 2002-07-09 2007-10-03 株式会社東芝 Photomask manufacturing method
JP3727911B2 (en) * 2002-09-25 2005-12-21 株式会社東芝 Mask, mask manufacturing method, and semiconductor device manufacturing method
JP3854241B2 (en) * 2003-04-25 2006-12-06 株式会社東芝 Method for manufacturing focus monitor mask and method for manufacturing semiconductor device
WO2005024518A2 (en) * 2003-09-05 2005-03-17 Schott Ag Phase shift mask blank with increased uniformity
JP2006317665A (en) * 2005-05-12 2006-11-24 Shin Etsu Chem Co Ltd Phase shift mask blank, phase shift mask, and method for fabricating them
JP4968709B2 (en) * 2006-03-17 2012-07-04 Ｈｏｙａ株式会社 Manufacturing method of gray tone mask
JP2007271696A (en) * 2006-03-30 2007-10-18 Hoya Corp Gray tone mask blank and photomask
KR101255616B1 (en) * 2006-07-28 2013-04-16 삼성디스플레이 주식회사 Multi-tone optical mask, method of manufacturing the same and method of manufacturing thin film transistor substrate using the same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI505018B (en) * 2012-06-29 2015-10-21 S&S Tech Co Ltd Blankmask and method for fabricating photomask using the same
US9229317B2 (en) 2012-06-29 2016-01-05 S&S Tech Co., Ltd. Blankmask and method for fabricating photomask using the same

Also Published As

Publication number Publication date
KR20110074834A (en) 2011-07-04
KR20100131404A (en) 2010-12-15
TWI432885B (en) 2014-04-01
KR101100522B1 (en) 2011-12-29
JP2010198042A (en) 2010-09-09
CN101025564B (en) 2010-12-15
KR20070083210A (en) 2007-08-23
CN101025564A (en) 2007-08-29
CN101866107B (en) 2013-08-07
CN101866107A (en) 2010-10-20
JP4642140B2 (en) 2011-03-02
KR101045450B1 (en) 2011-06-30

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