SG11201710317RA - Substrate with electrically conductive film, substrate with multilayer reflective film, reflective mask blank, reflective mask, and method of manufacturing semiconductor device - Google Patents
Substrate with electrically conductive film, substrate with multilayer reflective film, reflective mask blank, reflective mask, and method of manufacturing semiconductor deviceInfo
- Publication number
- SG11201710317RA SG11201710317RA SG11201710317RA SG11201710317RA SG11201710317RA SG 11201710317R A SG11201710317R A SG 11201710317RA SG 11201710317R A SG11201710317R A SG 11201710317RA SG 11201710317R A SG11201710317R A SG 11201710317RA SG 11201710317R A SG11201710317R A SG 11201710317RA
- Authority
- SG
- Singapore
- Prior art keywords
- substrate
- reflective mask
- reflective
- film
- semiconductor device
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
- G03F1/40—Electrostatic discharge [ESD] related features, e.g. antistatic coatings or a conductive metal layer around the periphery of the mask substrate
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
- G03F1/24—Reflection masks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015121712 | 2015-06-17 | ||
| PCT/JP2016/067134 WO2016204051A1 (en) | 2015-06-17 | 2016-06-08 | Substrate provided with electroconductive film, substrate provided with multi-layer reflective film, reflective mask blank, reflective mask, and method for manufacturing semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG11201710317RA true SG11201710317RA (en) | 2018-01-30 |
Family
ID=57545764
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG11201710317RA SG11201710317RA (en) | 2015-06-17 | 2016-06-08 | Substrate with electrically conductive film, substrate with multilayer reflective film, reflective mask blank, reflective mask, and method of manufacturing semiconductor device |
| SG10201911400WA SG10201911400WA (en) | 2015-06-17 | 2016-06-08 | Substrate with electrically conductive film, substrate with multilayer reflective film, reflective mask blank, reflective mask, and method of manufacturing semiconductor device |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG10201911400WA SG10201911400WA (en) | 2015-06-17 | 2016-06-08 | Substrate with electrically conductive film, substrate with multilayer reflective film, reflective mask blank, reflective mask, and method of manufacturing semiconductor device |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US10606166B2 (en) |
| JP (3) | JP6815995B2 (en) |
| KR (2) | KR102653351B1 (en) |
| SG (2) | SG11201710317RA (en) |
| TW (2) | TWI755085B (en) |
| WO (1) | WO2016204051A1 (en) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SG11201710317RA (en) | 2015-06-17 | 2018-01-30 | Hoya Corp | Substrate with electrically conductive film, substrate with multilayer reflective film, reflective mask blank, reflective mask, and method of manufacturing semiconductor device |
| US11048159B2 (en) * | 2016-03-31 | 2021-06-29 | Hoya Corporation | Method for manufacturing reflective mask blank, reflective mask blank, method for manufacturing reflective mask, reflective mask, and method for manufacturing semiconductor device |
| SG11201906153SA (en) * | 2017-01-17 | 2019-08-27 | Hoya Corp | Reflective mask blank, reflective mask, method of manufacturing same, and method of manufacturing semiconductor device |
| JP6863169B2 (en) * | 2017-08-15 | 2021-04-21 | Ａｇｃ株式会社 | Reflective mask blank, and reflective mask |
| US10553428B2 (en) | 2017-08-22 | 2020-02-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Reflection mode photomask and fabrication method therefore |
| US10768534B2 (en) | 2018-08-14 | 2020-09-08 | Taiwan Semiconductor Manufacturing Co., Ltd. | Photolithography apparatus and method and method for handling wafer |
| JP6855645B1 (en) * | 2019-06-27 | 2021-04-07 | Hoya株式会社 | Manufacturing method of thin film substrate, multilayer reflective coating substrate, reflective mask blank, reflective mask and semiconductor device |
| JP7354005B2 (en) * | 2020-02-12 | 2023-10-02 | Hoya株式会社 | Reflective mask blank, reflective mask, and semiconductor device manufacturing method |
| US11111176B1 (en) * | 2020-02-27 | 2021-09-07 | Applied Materials, Inc. | Methods and apparatus of processing transparent substrates |
| KR102567180B1 (en) * | 2020-04-21 | 2023-08-16 | 에이지씨 가부시키가이샤 | Reflective mask blank for euv lithography |
| US20210333717A1 (en) * | 2020-04-23 | 2021-10-28 | Taiwan Semiconductor Manufacturing Co., Ltd. | Extreme ultraviolet mask and method of manufacturing the same |
| KR102464780B1 (en) * | 2020-09-02 | 2022-11-09 | 주식회사 에스앤에스텍 | Blankmask with Backside Conductive Layer, and Photomask manufactured with the same |
| JP2022129534A (en) * | 2021-02-25 | 2022-09-06 | Hoya株式会社 | Mask blank, reflection type mask, and method for manufacturing semiconductor device |
| JP2023053673A (en) * | 2021-10-01 | 2023-04-13 | 信越化学工業株式会社 | Substrate with film for reflective mask blank, reflective mask blank, and method for manufacturing reflective mask |
| JP2024034663A (en) * | 2022-09-01 | 2024-03-13 | 信越化学工業株式会社 | Reflection type mask blank and production method of reflection type mask |
| WO2024071026A1 (en) * | 2022-09-28 | 2024-04-04 | Hoya株式会社 | Substrate with conductive film, reflective mask blank, reflective mask, and semiconductor device production method |
Family Cites Families (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS526730Y2 (en) | 1972-10-30 | 1977-02-12 | ||
| JPS5228892Y2 (en) | 1972-12-04 | 1977-07-01 | ||
| JPS5082857U (en) | 1973-11-30 | 1975-07-16 | ||
| JPS5596951A (en) * | 1979-01-17 | 1980-07-23 | Mitsubishi Electric Corp | Negative for photomask |
| JP2001358055A (en) | 2000-06-15 | 2001-12-26 | Nikon Corp | Exposure apparatus and method for manufacturing device |
| JP2005210093A (en) * | 2003-12-25 | 2005-08-04 | Hoya Corp | Substrate with muti-layer reflective film, exposure reflection type mask blank, exposure reflection type mask, and manufacturing methods for these |
| US20050238922A1 (en) | 2003-12-25 | 2005-10-27 | Hoya Corporation | Substrate with a multilayer reflection film, reflection type mask blank for exposure, reflection type mask for exposure and methods of manufacturing them |
| EP1962326B1 (en) | 2005-12-12 | 2012-06-06 | Asahi Glass Company, Limited | Reflection-type mask blank for euv lithography, and substrate with electrically conductive film for the mask blank |
| US7678511B2 (en) * | 2006-01-12 | 2010-03-16 | Asahi Glass Company, Limited | Reflective-type mask blank for EUV lithography |
| KR101585696B1 (en) | 2006-12-15 | 2016-01-14 | 아사히 가라스 가부시키가이샤 | Reflective mask blank for euv lithography and substrate with function film for the mask blank |
| JP4372178B2 (en) * | 2007-04-27 | 2009-11-25 | 株式会社東芝 | Light reflecting mask, light reflecting mask manufacturing method, and semiconductor device manufacturing method |
| WO2009116348A1 (en) * | 2008-03-18 | 2009-09-24 | 旭硝子株式会社 | Reflective mask blank for euv lithography |
| JP4994405B2 (en) | 2009-03-05 | 2012-08-08 | Ｈｏｙａ株式会社 | Method for determining quality of release film of press mold and method for manufacturing optical element |
| JP5515773B2 (en) * | 2010-01-21 | 2014-06-11 | 大日本印刷株式会社 | Reflective mask having light-shielding frame and method for manufacturing the same |
| TWI399456B (en) * | 2010-01-25 | 2013-06-21 | Sun Well Solar Corp | Apparatus for conductive film coating and method for processing substrates therein |
| JP5573961B2 (en) * | 2010-12-16 | 2014-08-20 | 日立化成株式会社 | Photosensitive element, resist pattern forming method, and printed wiring board manufacturing method |
| KR20130013515A (en) * | 2011-07-28 | 2013-02-06 | 삼성디스플레이 주식회사 | Organic light emitting display apparatus |
| EP2581789B1 (en) * | 2011-10-14 | 2020-04-29 | Fundació Institut de Ciències Fotòniques | Optically transparent and electrically conductive coatings and method for their deposition on a substrate |
| JP6157874B2 (en) * | 2012-03-19 | 2017-07-05 | Hoya株式会社 | EUV Lithographic Substrate with Multilayer Reflective Film, EUV Lithographic Reflective Mask Blank, EUV Lithographic Reflective Mask, and Semiconductor Device Manufacturing Method |
| JP5575169B2 (en) * | 2012-03-22 | 2014-08-20 | 株式会社ニューフレアテクノロジー | Charged particle beam drawing apparatus and charged particle beam drawing method |
| JP5993779B2 (en) * | 2013-03-29 | 2016-09-14 | 富士フイルム株式会社 | Conductive film forming composition, conductive film, wiring board |
| KR102109129B1 (en) * | 2013-07-02 | 2020-05-08 | 삼성전자주식회사 | Reflective photomask blank and reflective photomask |
| JP6186996B2 (en) * | 2013-07-30 | 2017-08-30 | 旭硝子株式会社 | Reflective mask blank for EUV lithography and reflective mask for EUV lithography |
| KR101877896B1 (en) | 2013-09-27 | 2018-07-12 | 호야 가부시키가이샤 | Substrate provided with conductive film, substrate provided with multi-layer reflection film, reflective mask blank, reflective mask, and semiconductor device manufacturing method |
| JP2015126127A (en) | 2013-12-26 | 2015-07-06 | キヤノン株式会社 | Holding device, exposure device, and manufacturing method for article |
| JP6257428B2 (en) * | 2014-04-15 | 2018-01-10 | 株式会社ジャパンディスプレイ | Electrode substrate, display device, input device, and electrode substrate manufacturing method |
| SG11201710317RA (en) | 2015-06-17 | 2018-01-30 | Hoya Corp | Substrate with electrically conductive film, substrate with multilayer reflective film, reflective mask blank, reflective mask, and method of manufacturing semiconductor device |
-
2016
- 2016-06-08 SG SG11201710317RA patent/SG11201710317RA/en unknown
- 2016-06-08 US US15/580,331 patent/US10606166B2/en active Active
- 2016-06-08 KR KR1020177035098A patent/KR102653351B1/en active IP Right Grant
- 2016-06-08 JP JP2017525171A patent/JP6815995B2/en active Active
- 2016-06-08 KR KR1020247010348A patent/KR20240046293A/en not_active Application Discontinuation
- 2016-06-08 SG SG10201911400WA patent/SG10201911400WA/en unknown
- 2016-06-08 WO PCT/JP2016/067134 patent/WO2016204051A1/en active Application Filing
- 2016-06-16 TW TW109134273A patent/TWI755085B/en active
- 2016-06-16 TW TW105118976A patent/TWI708993B/en active
-
2020
- 2020-02-20 US US16/796,395 patent/US10996554B2/en active Active
- 2020-10-30 JP JP2020182324A patent/JP7296358B2/en active Active
-
2022
- 2022-03-18 JP JP2022043344A patent/JP7296499B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| KR20180018526A (en) | 2018-02-21 |
| JP6815995B2 (en) | 2021-01-20 |
| TW202109173A (en) | 2021-03-01 |
| KR20240046293A (en) | 2024-04-08 |
| TW201706709A (en) | 2017-02-16 |
| US10996554B2 (en) | 2021-05-04 |
| TWI755085B (en) | 2022-02-11 |
| TWI708993B (en) | 2020-11-01 |
| JPWO2016204051A1 (en) | 2018-04-05 |
| JP7296499B2 (en) | 2023-06-22 |
| US20200192213A1 (en) | 2020-06-18 |
| US10606166B2 (en) | 2020-03-31 |
| WO2016204051A1 (en) | 2016-12-22 |
| JP2021015295A (en) | 2021-02-12 |
| JP2022069683A (en) | 2022-05-11 |
| SG10201911400WA (en) | 2020-02-27 |
| JP7296358B2 (en) | 2023-06-22 |
| US20180149962A1 (en) | 2018-05-31 |
| KR102653351B1 (en) | 2024-04-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| SG11201710317RA (en) | Substrate with electrically conductive film, substrate with multilayer reflective film, reflective mask blank, reflective mask, and method of manufacturing semiconductor device | |
| SG10201911502WA (en) | Conductive film coated substrate, multilayer reflective film coated substrate, reflective mask blank, reflective mask, and semiconductor device manufacturing method | |
| SG11201807251SA (en) | Reflective mask blank, reflective mask and method of manufacturing semiconductor device | |
| EP3467877A4 (en) | Electronic device based on two-dimensional semiconductor and manufacturing method therefor | |
| EP3358614A4 (en) | Circuit substrate and semiconductor device | |
| SG11201505056WA (en) | Substrate for mask blank, substrate with multilayer reflective film, reflective mask blank, reflective mask, method of manufacturing for substrate for mask blank, method of manufacturing for substrate with multilayer reflective film, and method of manufacturing semiconductor device | |
| EP3313152A4 (en) | Method for manufacturing organic electronic element, and method for forming organic thin film | |
| SG11202005918UA (en) | Substrate with conductive film, substrate with multilayer reflective film, reflective mask blank, reflective mask, and semiconductor device manufacturing method | |
| EP3491670A4 (en) | Array substrate, manufacturing method thereof, and electronic device | |
| EP3522239A4 (en) | Semiconductor light-emitting element and method for manufacturing semiconductor light-emitting element | |
| EP3588539A4 (en) | Semiconductor substrate, electronic device, method for inspecting semiconductor substrate, and method for manufacturing electronic device | |
| SG11202002853TA (en) | Substrate with a multilayer reflective film, reflective mask blank, reflective mask and method of manufacturing semiconductor device | |
| EP3557957A4 (en) | Wiring substrate, multilayer wiring substrate, and method for manufacturing wiring substrate | |
| EP3197251A4 (en) | Layered body, substrate for semiconductor element mounting, and method for manufacturing said body and substrate | |
| EP3422367A4 (en) | Electroconductive paste, electronic substrate, and method for manufacturing said substrate | |
| EP3093891A4 (en) | Semiconductor substrate, semiconductor device and manufacturing method for semiconductor substrate | |
| EP3016113A4 (en) | Conductive substrate and manufacturing method thereof | |
| EP3413346A4 (en) | METAL MEMBER WITH Ag UNDERLAYER, INSULATED CIRCUIT BOARD WITH Ag UNDERLAYER, SEMICONDUCTOR DEVICE, INSULATED CIRCUIT BOARD WITH HEATSINK, AND METHOD OF MANUFACTURING METAL MEMBER WITH Ag UNDERLAYER | |
| EP3706158A4 (en) | Etching method and semiconductor manufacturing method | |
| EP3648182A4 (en) | Semiconductor light-emitting element and method for manufacturing semiconductor light-emitting element | |
| EP3595021A4 (en) | Semiconductor light-emitting element and method for manufacturing semiconductor light-emitting element | |
| EP3565390A4 (en) | Wiring substrate and wiring substrate manufacturing method | |
| EP3544045A4 (en) | Compound semiconductor substrate manufacturing method and compound semiconductor substrate | |
| SG11202109244UA (en) | Mask blank substrate, substrate with conductive film, substrate with multilayer reflective film, reflective mask blank, reflective mask, and method of manufacturing semiconductor device | |
| SG11201911415VA (en) | Substrate with multilayer reflective film, reflective mask blank, reflective mask, and method of manufacturing semiconductor device |