SG11201505056WA - Substrate for mask blank, substrate with multilayer reflective film, reflective mask blank, reflective mask, method of manufacturing for substrate for mask blank, method of manufacturing for substrate with multilayer reflective film, and method of manufacturing semiconductor device - Google Patents
Substrate for mask blank, substrate with multilayer reflective film, reflective mask blank, reflective mask, method of manufacturing for substrate for mask blank, method of manufacturing for substrate with multilayer reflective film, and method of manufacturing semiconductor deviceInfo
- Publication number
- SG11201505056WA SG11201505056WA SG11201505056WA SG11201505056WA SG11201505056WA SG 11201505056W A SG11201505056W A SG 11201505056WA SG 11201505056W A SG11201505056W A SG 11201505056WA SG 11201505056W A SG11201505056W A SG 11201505056WA SG 11201505056W A SG11201505056W A SG 11201505056WA
- Authority
- SG
- Singapore
- Prior art keywords
- substrate
- manufacturing
- mask blank
- reflective film
- mask
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title 4
- 238000004519 manufacturing process Methods 0.000 title 3
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
- G03F1/84—Inspecting
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/60—Substrates
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
- G03F1/24—Reflection masks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/66—Containers specially adapted for masks, mask blanks or pellicles; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/80—Etching
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
- G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
Landscapes
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Inorganic Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Surface Treatment Of Glass (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012287376 | 2012-12-28 | ||
PCT/JP2013/085049 WO2014104276A1 (en) | 2012-12-28 | 2013-12-27 | Substrate for mask blank, substrate with multilayer reflective film, reflective type mask blank, reflective type mask, manufacturing method of substrate for mask blank and manufacturing method of substrate with multilayer reflective film as well as manufacturing method of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201505056WA true SG11201505056WA (en) | 2015-08-28 |
Family
ID=51021347
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201505056WA SG11201505056WA (en) | 2012-12-28 | 2013-12-27 | Substrate for mask blank, substrate with multilayer reflective film, reflective mask blank, reflective mask, method of manufacturing for substrate for mask blank, method of manufacturing for substrate with multilayer reflective film, and method of manufacturing semiconductor device |
SG10201605473TA SG10201605473TA (en) | 2012-12-28 | 2013-12-27 | Substrate for mask blank, substrate with multilayer reflective film, reflective mask blank, reflective mask, method of manufacturing for substrate for mask blank, method of manufacturing for substrate with multilayer reflective film, and method of manufacturing semiconductor device |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10201605473TA SG10201605473TA (en) | 2012-12-28 | 2013-12-27 | Substrate for mask blank, substrate with multilayer reflective film, reflective mask blank, reflective mask, method of manufacturing for substrate for mask blank, method of manufacturing for substrate with multilayer reflective film, and method of manufacturing semiconductor device |
Country Status (6)
Country | Link |
---|---|
US (2) | US9581895B2 (en) |
JP (2) | JP5712336B2 (en) |
KR (2) | KR101995879B1 (en) |
SG (2) | SG11201505056WA (en) |
TW (2) | TWI625592B (en) |
WO (1) | WO2014104276A1 (en) |
Families Citing this family (21)
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JP6480139B2 (en) * | 2014-09-30 | 2019-03-06 | 株式会社フジミインコーポレーテッド | Polishing composition |
JP2016113356A (en) * | 2014-12-12 | 2016-06-23 | 旭硝子株式会社 | Method for finish-working the surface of pre-polished glass substrate surface |
JP6499440B2 (en) | 2014-12-24 | 2019-04-10 | Hoya株式会社 | Reflective mask blank and reflective mask |
JP6372007B2 (en) * | 2015-02-03 | 2018-08-15 | Agc株式会社 | Mask blank glass substrate |
JP6665571B2 (en) * | 2015-02-16 | 2020-03-13 | 大日本印刷株式会社 | Photomask, photomask blanks, and photomask manufacturing method |
US10921705B2 (en) | 2015-11-27 | 2021-02-16 | Hoya Corporation | Mask blank substrate, substrate with multilayer reflective film, reflective mask blank, reflective mask and method of manufacturing semiconductor device |
JP6541557B2 (en) * | 2015-11-27 | 2019-07-10 | Hoya株式会社 | Defect evaluation method, mask blank manufacturing method, mask blank, mask blank substrate manufacturing method, mask blank substrate, transfer mask manufacturing method and semiconductor device manufacturing method |
JP6582971B2 (en) * | 2015-12-25 | 2019-10-02 | Agc株式会社 | Mask blank substrate and method for manufacturing the same |
JP6739960B2 (en) * | 2016-03-28 | 2020-08-12 | Hoya株式会社 | Reflective mask blank, reflective mask, and method for manufacturing semiconductor device |
JP6873758B2 (en) * | 2016-03-28 | 2021-05-19 | Hoya株式会社 | A method for manufacturing a substrate, a method for manufacturing a substrate with a multilayer reflective film, a method for manufacturing a mask blank, and a method for manufacturing a transfer mask. |
WO2017169973A1 (en) * | 2016-03-31 | 2017-10-05 | Hoya株式会社 | Method for manufacturing reflective mask blank, reflective mask blank, method for manufacturing reflective mask, reflective mask, and method for manufacturing semiconductor device |
US9870612B2 (en) * | 2016-06-06 | 2018-01-16 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for repairing a mask |
JP6717211B2 (en) * | 2017-01-16 | 2020-07-01 | Agc株式会社 | Substrate for mask blank, mask blank, and photomask |
JP7039248B2 (en) * | 2017-10-20 | 2022-03-22 | 株式会社Vtsタッチセンサー | Conductive film, touch panel, and display device |
KR102374206B1 (en) | 2017-12-05 | 2022-03-14 | 삼성전자주식회사 | Method of fabricating semiconductor device |
JP2019155232A (en) * | 2018-03-08 | 2019-09-19 | 株式会社ジェイテックコーポレーション | Cleaning method and cleaning device |
US11442021B2 (en) * | 2019-10-11 | 2022-09-13 | Kla Corporation | Broadband light interferometry for focal-map generation in photomask inspection |
JP7318565B2 (en) * | 2020-03-03 | 2023-08-01 | 信越化学工業株式会社 | Manufacturing method of reflective mask blank |
JP7268644B2 (en) | 2020-06-09 | 2023-05-08 | 信越化学工業株式会社 | Glass substrate for mask blanks |
US11422096B2 (en) | 2020-11-30 | 2022-08-23 | Applied Materials, Inc. | Surface topography measurement apparatus and method |
US20220308438A1 (en) | 2021-03-24 | 2022-09-29 | Hoya Corporation | Method for manufacturing multilayered-reflective-film-provided substrate, reflective mask blank and method for manufacturing the same, and method for manufacturing reflective mask |
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JP3766802B2 (en) | 1999-07-22 | 2006-04-19 | コーニング インコーポレイテッド | Far-UV soft X-ray projection lithography system and lithography element |
JP4219718B2 (en) | 2003-03-28 | 2009-02-04 | Hoya株式会社 | Manufacturing method of glass substrate for EUV mask blanks and manufacturing method of EUV mask blanks |
DE102004008824B4 (en) * | 2004-02-20 | 2006-05-04 | Schott Ag | Glass ceramic with low thermal expansion and their use |
JP5090633B2 (en) | 2004-06-22 | 2012-12-05 | 旭硝子株式会社 | Glass substrate polishing method |
JP4506399B2 (en) | 2004-10-13 | 2010-07-21 | 株式会社荏原製作所 | Catalyst-assisted chemical processing method |
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JP5169163B2 (en) | 2006-12-01 | 2013-03-27 | 旭硝子株式会社 | Method for finishing a pre-polished glass substrate surface |
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JP5369506B2 (en) | 2008-06-11 | 2013-12-18 | 信越化学工業株式会社 | Abrasive for synthetic quartz glass substrate |
KR20110065439A (en) * | 2008-09-05 | 2011-06-15 | 아사히 가라스 가부시키가이샤 | Reflective mask blank for euv lithography and method for producing the same |
EP2434345B1 (en) * | 2010-09-27 | 2013-07-03 | Imec | Method and system for evaluating euv mask flatness |
JP5196507B2 (en) * | 2011-01-05 | 2013-05-15 | Hoya株式会社 | Reflective mask blank, reflective mask, and multilayer film reflector |
JP5858623B2 (en) * | 2011-02-10 | 2016-02-10 | 信越化学工業株式会社 | Mold substrate |
JP5910625B2 (en) * | 2011-03-07 | 2016-04-27 | 旭硝子株式会社 | Multilayer substrate, multilayer substrate manufacturing method, multilayer substrate quality control method |
TWI688819B (en) | 2012-03-28 | 2020-03-21 | 日商Hoya股份有限公司 | Substrate for reticle base, substrate with multilayer reflective film, reflective reticle base, reflective reticle, transmissive reticle base, transmissive reticle, and method of manufacturing semiconductor device |
JP2012159855A (en) * | 2012-04-23 | 2012-08-23 | Hoya Corp | Mask blank manufacturing method and mask manufacturing method |
-
2013
- 2013-12-27 TW TW102148848A patent/TWI625592B/en active
- 2013-12-27 KR KR1020177029863A patent/KR101995879B1/en active IP Right Grant
- 2013-12-27 SG SG11201505056WA patent/SG11201505056WA/en unknown
- 2013-12-27 US US14/655,190 patent/US9581895B2/en active Active
- 2013-12-27 JP JP2014539933A patent/JP5712336B2/en active Active
- 2013-12-27 SG SG10201605473TA patent/SG10201605473TA/en unknown
- 2013-12-27 KR KR1020157020360A patent/KR101878164B1/en active IP Right Grant
- 2013-12-27 TW TW107111424A patent/TWI652541B/en active
- 2013-12-27 WO PCT/JP2013/085049 patent/WO2014104276A1/en active Application Filing
-
2015
- 2015-03-09 JP JP2015045754A patent/JP6262165B2/en active Active
-
2017
- 2017-01-27 US US15/417,846 patent/US10025176B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
TWI625592B (en) | 2018-06-01 |
WO2014104276A1 (en) | 2014-07-03 |
TWI652541B (en) | 2019-03-01 |
KR20170118981A (en) | 2017-10-25 |
US9581895B2 (en) | 2017-02-28 |
JP6262165B2 (en) | 2018-01-17 |
JP2015148807A (en) | 2015-08-20 |
KR101995879B1 (en) | 2019-07-03 |
KR20150103142A (en) | 2015-09-09 |
TW201432369A (en) | 2014-08-16 |
JP5712336B2 (en) | 2015-05-07 |
TW201823850A (en) | 2018-07-01 |
US20150331312A1 (en) | 2015-11-19 |
US10025176B2 (en) | 2018-07-17 |
US20170131629A1 (en) | 2017-05-11 |
SG10201605473TA (en) | 2016-09-29 |
JPWO2014104276A1 (en) | 2017-01-19 |
KR101878164B1 (en) | 2018-07-13 |
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