SG11201606136UA - Method and device for bonding substrates - Google Patents

Method and device for bonding substrates

Info

Publication number
SG11201606136UA
SG11201606136UA SG11201606136UA SG11201606136UA SG11201606136UA SG 11201606136U A SG11201606136U A SG 11201606136UA SG 11201606136U A SG11201606136U A SG 11201606136UA SG 11201606136U A SG11201606136U A SG 11201606136UA SG 11201606136U A SG11201606136U A SG 11201606136UA
Authority
SG
Singapore
Prior art keywords
bonding substrates
substrates
bonding
Prior art date
Application number
SG11201606136UA
Other languages
English (en)
Inventor
Friedrich Paul Lindner
Original Assignee
Ev Group E Thallner Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ev Group E Thallner Gmbh filed Critical Ev Group E Thallner Gmbh
Publication of SG11201606136UA publication Critical patent/SG11201606136UA/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67092Apparatus for mechanical treatment
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/44Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/38 - H01L21/428
    • H01L21/447Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/38 - H01L21/428 involving the application of pressure, e.g. thermo-compression bonding
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67098Apparatus for thermal treatment
    • H01L21/67103Apparatus for thermal treatment mainly by conduction
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67098Apparatus for thermal treatment
    • H01L21/67109Apparatus for thermal treatment mainly by convection
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67242Apparatus for monitoring, sorting or marking
    • H01L21/67248Temperature monitoring
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68707Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a robot blade, or gripped by a gripper for conveyance

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Robotics (AREA)
  • Pressure Welding/Diffusion-Bonding (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Wire Bonding (AREA)
SG11201606136UA 2014-02-03 2014-02-03 Method and device for bonding substrates SG11201606136UA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/EP2014/052037 WO2015113641A1 (de) 2014-02-03 2014-02-03 Verfahren und vorrichtung zum bonden von substraten

Publications (1)

Publication Number Publication Date
SG11201606136UA true SG11201606136UA (en) 2016-09-29

Family

ID=50064594

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201606136UA SG11201606136UA (en) 2014-02-03 2014-02-03 Method and device for bonding substrates

Country Status (8)

Country Link
US (3) US10014193B2 (zh)
EP (2) EP3312871A1 (zh)
JP (1) JP6395847B2 (zh)
KR (3) KR102009551B1 (zh)
CN (3) CN110707027B (zh)
SG (1) SG11201606136UA (zh)
TW (3) TWI750463B (zh)
WO (1) WO2015113641A1 (zh)

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JP6579262B2 (ja) * 2016-03-28 2019-09-25 株式会社ニコン 基板貼り合わせ装置および基板貼り合わせ方法
WO2018006258A1 (en) 2016-07-05 2018-01-11 Shenzhen Xpectvision Technology Co., Ltd. Bonding materials of dissimilar coefficients of thermal expansion
KR20230087612A (ko) * 2016-09-29 2023-06-16 에베 그룹 에. 탈너 게엠베하 2개의 기판을 접합하기 위한 장치 및 방법
US10954122B2 (en) 2017-03-16 2021-03-23 Ev Group E. Thallner Gmbh Method for bonding of at least three substrates
SG11201907720RA (en) 2017-03-20 2019-10-30 Ev Group E Thallner Gmbh Method for the alignment of two substrates
JP6854696B2 (ja) * 2017-05-02 2021-04-07 東京エレクトロン株式会社 接合装置および接合方法
CN110168711B (zh) 2017-09-21 2024-02-13 Ev 集团 E·索尔纳有限责任公司 接合基板的装置和方法
US10872804B2 (en) * 2017-11-03 2020-12-22 Asm Ip Holding B.V. Apparatus and methods for isolating a reaction chamber from a loading chamber resulting in reduced contamination
US10872803B2 (en) 2017-11-03 2020-12-22 Asm Ip Holding B.V. Apparatus and methods for isolating a reaction chamber from a loading chamber resulting in reduced contamination
KR20200125584A (ko) 2018-02-27 2020-11-04 에베 그룹 에. 탈너 게엠베하 포지션을 결정하기 위한 마크 필드, 방법 및 장치
KR102619624B1 (ko) 2018-11-13 2023-12-29 삼성전자주식회사 기판합착 장치 및 방법
JP6818076B2 (ja) * 2019-04-17 2021-01-20 エーファウ・グループ・エー・タルナー・ゲーエムベーハー 基板を接合する装置および方法
KR20220167376A (ko) 2020-06-29 2022-12-20 에베 그룹 에. 탈너 게엠베하 기판 접합 방법 및 장치
JP2020188284A (ja) * 2020-08-04 2020-11-19 エーファウ・グループ・エー・タルナー・ゲーエムベーハー 基板をボンディングするための方法および装置
KR20220030454A (ko) 2020-09-01 2022-03-11 삼성전자주식회사 기판 정렬 장치 및 이를 구비하는 기판 본딩 설비
US20240014153A1 (en) * 2020-12-25 2024-01-11 Tokyo Electron Limited Substrate bonding system and method for substrate bonding
TWI776665B (zh) * 2021-09-03 2022-09-01 天虹科技股份有限公司 鍵合對準機構及應用該鍵合對準機構的鍵合機台
WO2024046578A1 (de) 2022-09-02 2024-03-07 Ev Group E. Thallner Gmbh Vakuumsubstrathalter mit optimierter vakuumdichtung

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Also Published As

Publication number Publication date
TWI660845B (zh) 2019-06-01
US20210183666A1 (en) 2021-06-17
CN110707027B (zh) 2023-10-31
CN105960703A (zh) 2016-09-21
KR102259484B1 (ko) 2021-06-02
EP3103135B1 (de) 2021-05-12
KR102186019B1 (ko) 2020-12-04
KR20200138415A (ko) 2020-12-09
TWI752791B (zh) 2022-01-11
WO2015113641A1 (de) 2015-08-06
TWI750463B (zh) 2021-12-21
KR102009551B1 (ko) 2019-08-09
US20180277403A1 (en) 2018-09-27
EP3103135A1 (de) 2016-12-14
US10971378B2 (en) 2021-04-06
TW201534476A (zh) 2015-09-16
EP3312871A1 (de) 2018-04-25
KR20160115930A (ko) 2016-10-06
US20160336203A1 (en) 2016-11-17
JP2017511970A (ja) 2017-04-27
CN105960703B (zh) 2019-12-03
CN110707026A (zh) 2020-01-17
TW201927577A (zh) 2019-07-16
JP6395847B2 (ja) 2018-09-26
CN110707027A (zh) 2020-01-17
KR20190093708A (ko) 2019-08-09
TW202118639A (zh) 2021-05-16
US10014193B2 (en) 2018-07-03

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