CN111947450A - Semiconductor chamber and annealing device - Google Patents
Semiconductor chamber and annealing device Download PDFInfo
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- CN111947450A CN111947450A CN202010856751.9A CN202010856751A CN111947450A CN 111947450 A CN111947450 A CN 111947450A CN 202010856751 A CN202010856751 A CN 202010856751A CN 111947450 A CN111947450 A CN 111947450A
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
- F27B1/00—Shaft or like vertical or substantially vertical furnaces
- F27B1/10—Details, accessories, or equipment peculiar to furnaces of these types
- F27B1/16—Arrangements of tuyeres
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
- F27B1/00—Shaft or like vertical or substantially vertical furnaces
- F27B1/10—Details, accessories, or equipment peculiar to furnaces of these types
- F27B1/18—Arrangements of dust collectors
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
- F27D25/00—Devices or methods for removing incrustations, e.g. slag, metal deposits, dust; Devices or methods for preventing the adherence of slag
- F27D25/008—Devices or methods for removing incrustations, e.g. slag, metal deposits, dust; Devices or methods for preventing the adherence of slag using fluids or gases, e.g. blowers, suction units
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
- F27D7/00—Forming, maintaining, or circulating atmospheres in heating chambers
- F27D7/02—Supplying steam, vapour, gases, or liquids
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
Abstract
The embodiment of the invention provides a semiconductor chamber and an annealing device, wherein the semiconductor chamber comprises a cavity and a purging device for removing metal pollutants in the cavity, the purging device comprises at least two air inlet pipelines and a uniform flow structure, and the uniform flow structure is arranged in the cavity and is provided with a uniform flow cavity; the at least two gas inlet pipelines are communicated with the uniform flow cavity and used for respectively conveying at least two gases to the uniform flow cavity so that the at least two gases flow into the cavity after being mixed in the uniform flow cavity, and the at least two gases are used for reacting to generate free radicals capable of being combined with metal pollutants. The semiconductor chamber and the annealing device provided by the embodiment of the invention can effectively remove metal pollution in the chamber, do not need to disassemble and assemble to clean the chamber, and reduce the equipment maintenance time and the equipment operation cost, thereby increasing the equipment normal operation time, improving the productivity, reducing the uncertainty and unstable factors in the subsequent process and improving the process reliability.
Description
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to a semiconductor chamber and an annealing device.
Background
As integrated circuit fabrication technology continues to advance and feature sizes continue to shrink, process equipment needs to be continuously improved and process flow is continuously optimized. For example, higher requirements are put on various process indexes including metal pollution and the like, and particularly in a processing link, a metal pollution source is inevitably introduced in the process of processing and forming a high-purity quartz material including a chamber, so that the metal pollution level after the process is deteriorated.
For example, H for a process gas2In the medium and high temperature annealing process, the activity of metal ions at high temperature is enhanced, and the corresponding amount of detected metal pollution is multiplied, so as to solve the problem of metal pollution, the currently adopted mode is to disassemble and clean the chamber after the metal pollution in the annealing device exceeds the standard, replace parts which are possibly polluted and clean the related wafer conveying area.
However, the dismounting and cleaning mode not only increases the maintenance time of the equipment, shortens the normal operation time of the equipment in the period, and reduces the productivity; moreover, the residual and continuously exuded metal pollution cannot be effectively removed after disassembly, assembly and cleaning, and the uncertainty and unstable factors in the subsequent process are increased; in addition, more replacement spare parts need to be stocked, increasing the equipment operating cost.
Disclosure of Invention
The embodiment of the invention aims to solve at least one of the technical problems in the prior art, and provides a semiconductor chamber and an annealing device, which can effectively remove metal pollution in the chamber, do not need to disassemble and clean the chamber, reduce the equipment maintenance time and the equipment operation cost, thereby increasing the normal operation time of the equipment, improving the capacity, reducing the uncertainty and unstable factors in the subsequent process and improving the process reliability.
In order to achieve the above object, an embodiment of the present invention provides a semiconductor chamber, which includes a cavity, and a purging device for removing metal contaminants in the cavity, where the purging device includes at least two gas inlet lines and a uniform flow structure,
the flow equalizing structure is arranged in the cavity and is provided with a flow equalizing cavity;
the at least two gas inlet pipelines are communicated with the uniform flow cavity and used for conveying at least two gases to the uniform flow cavity so that the at least two gases flow into the cavity after being mixed in the uniform flow cavity, and the at least two gases are used for reacting to generate free radicals capable of being combined with the metal pollutants.
Optionally, the flow equalizing structure comprises a flow equalizing plate, the flow equalizing plate divides the cavity into a flow equalizing space and a process space, and the flow equalizing space is used as the flow equalizing cavity; a plurality of air outlet holes are formed in the uniform flow plate and used for communicating the uniform flow space with the process space; and the air outlet ends of the at least two air inlet pipelines are communicated with the uniform flow space.
Optionally, the uniform flow plate is used for enabling the uniform flow space to be located above the process space; the air outlet ends of the at least two air inlet pipelines vertically penetrate through the uniform flow plate from the bottom of the cavity upwards and extend into the uniform flow space.
Optionally, the plurality of air outlet holes are distributed on a plurality of circumferences which take the center of the radial section of the uniform flow plate as the center of a circle and have different radiuses, and the plurality of air outlet holes on each circumference are uniformly distributed relative to the center of the circle;
the diameters of the air outlet holes on different circumferences are different, and the smaller the diameter of the circumference is, the smaller the diameter and/or the number of the air outlet holes on the circumference is; and/or the presence of a gas in the gas,
in at least one set of two adjacent circles, each of the air outlet holes on one of the circles is staggered with each of the air outlet holes on the other of the circles.
Optionally, a plurality of first connecting portions are arranged on the outer circumferential wall of the uniform flow plate at intervals along the circumferential direction of the uniform flow plate; a plurality of second connecting parts are correspondingly arranged on the side wall of the cavity at intervals;
a positioning groove is formed in the first connecting part, and the second connecting part is located in the positioning groove; or a positioning groove is arranged on the second connecting part, and the first connecting part is positioned in the positioning groove to limit the position of the flow homogenizing plate in the cavity.
Optionally, the semiconductor chamber further includes an exhaust structure for exhausting the tail gas in the cavity, the exhaust structure includes an exhaust port disposed at the bottom of the cavity, an exhaust pipe connected to the exhaust port, a protective sleeve sleeved outside the exhaust pipe, and a protective gas assembly, wherein an annular space is formed between the protective sleeve and the exhaust pipe, and an air inlet is disposed in the protective sleeve; the protective gas component is connected with the gas inlet and used for conveying protective gas to the annular space, and the protective gas is used for preventing tail gas containing the free radicals from corroding the exhaust pipe.
Optionally, a fixing ring is arranged between the exhaust pipe and the protective sleeve and at the downstream of the air inlet in a surrounding manner, the fixing ring is used for supporting the protective sleeve, and flow equalization holes are formed in the fixing ring at intervals along the axial direction of the fixing ring and used for enabling the gas in the annular space to uniformly flow out.
Optionally, the shielding gas assembly includes a gas source, a gas inlet pipeline, and a flow regulating valve and an on-off valve disposed on the gas inlet pipeline, wherein a gas inlet end of the gas inlet pipeline is connected to the gas source, and a gas outlet end of the gas inlet pipeline is connected to the gas inlet; the gas source is used for providing the protective gas.
Optionally, each of the at least two gas inlet pipes is further configured to deliver an inert gas to the uniform flow chamber as a process gas.
As another technical solution, an embodiment of the present invention further provides an annealing apparatus, which includes a heating furnace body and a process chamber disposed in the heating furnace body, where the process chamber adopts the semiconductor chamber provided in the embodiment of the present invention.
The embodiment of the invention has the following beneficial effects:
according to the semiconductor chamber provided by the embodiment of the invention, metal pollutants in the chamber are removed by virtue of the purging device, at least two gas inlet pipelines in the purging device are both communicated with the uniform flow cavity of the uniform flow structure and are used for respectively conveying at least two gases to the uniform flow cavity so that the at least two gases flow into the chamber after being mixed in the uniform flow cavity, the at least two gases are used for reacting to generate free radicals capable of being combined with the metal pollutants, for example, oxygen and hydrogen can react to generate hydroxyl free radicals, wherein OH in the free radicals-Can be combined with metal ions attached to the inner wall of the cavity, and the combined hydroxide can be discharged out of the cavity along with the airflow, so that metal pollution in the cavity can be effectively removed. Meanwhile, by means of the uniform flow structure, the leading-in direction of the air flow can be optimized, and at least two mixed gases can uniformly flow into the cavity, so that the difference of the blowing effect caused by uneven air flow distribution can be avoided, the metal pollution in the blowing blind area is fully removed, and the metal pollution, especially the copper pollution which is difficult to remove, is effectively reduced. According to the semiconductor chamber provided by the embodiment of the invention, the chamber does not need to be disassembled and cleaned, and the equipment maintenance time and the equipment operation cost are reduced, so that the normal operation time of the equipment is increased, the capacity is improved, in addition, the uncertainty and the unstable factors in the subsequent process are reduced, and the process reliability is improved.
According to the annealing device provided by the embodiment of the invention, by adopting the semiconductor chamber provided by the embodiment of the invention, metal pollution in the chamber can be effectively removed, the chamber does not need to be disassembled or cleaned, and the equipment maintenance time and the equipment operation cost are reduced, so that the normal operation time of the equipment is increased, the productivity is improved, in addition, the uncertainty and unstable factors in the subsequent technological process are reduced, and the technological reliability is improved.
Drawings
FIG. 1 is a cross-sectional view of a semiconductor chamber provided in accordance with an embodiment of the present invention;
FIG. 2A is a radial cross-sectional view of a semiconductor chamber provided in accordance with an embodiment of the present invention;
FIG. 2B is a top view of an uniform flow plate employed in embodiments of the present invention;
FIG. 3A is a cross-sectional view of an uniform flow plate employed in an embodiment of the present invention;
FIG. 3B is a connection diagram of the flow distributing plate and the cavity according to the embodiment of the present invention;
FIG. 4 is a gas flow diagram of a semiconductor chamber provided in accordance with an embodiment of the present invention;
FIG. 5 is a graph of relevant parameters for a purge process employed in an embodiment of the present invention;
fig. 6 is a diagram illustrating the purging effect of the semiconductor chamber according to the embodiment of the present invention.
Detailed Description
In order to make those skilled in the art better understand the technical solution of the present invention, the semiconductor chamber and the annealing apparatus provided by the embodiments of the present invention are described in detail below with reference to the accompanying drawings.
Referring to fig. 1, a semiconductor chamber according to an embodiment of the present invention is applied to an annealing apparatus, for example, the annealing apparatus includes a heating furnace body 1 and a process chamber disposed in the heating furnace body 1, the process chamber includes a quartz tube forming a process space, the bottom of the quartz tube has an opening for a boat 3 to enter and exit, the top of the quartz tube is closed, and the boat 3 is used for carrying a plurality of wafers and enabling the wafers to be spaced apart in a vertical direction. The semiconductor chamber provided by the embodiment of the invention comprises a chamber body 2, wherein the chamber body 2 is the quartz tube.
The semiconductor chamber provided by the embodiment of the invention further comprises a purging device, and the purging device is used for removing metal pollutants, such as Cu, in the cavity 2. The purging device comprises at least two air inlet pipelines and a uniform flow structure, wherein the uniform flow structure is arranged in the cavity 2 and is provided with a uniform flow cavity; at least two air inlet pipelines are communicated with the uniform flow cavity and used for respectively conveying at least two gases to the uniform flow cavity so that the at least two gases flow into the cavity 2 after being mixed in the uniform flow cavity, and the at least two gases are used for reacting to generate free radicals capable of being combined with metal pollutants.
The number of inlet lines and the type of gas delivered by each inlet line may vary according to the metal contamination and the specific process requirements, for example, for Cu goldAnd two air inlet pipelines can be provided, namely a first air inlet pipeline 41 and a second air inlet pipeline 42 which are respectively communicated with the uniform flow cavity of the uniform flow structure and are used for respectively conveying oxygen and hydrogen to the uniform flow cavity. Oxygen and hydrogen can react to form hydroxyl radicals, OH of which-Can be combined with metal ions attached to the inner wall of the chamber, the combined hydroxide can be discharged out of the chamber along with the air flow, the metal pollution in the chamber can be effectively removed, and the process gas is H2The medium and high temperature annealing process does not introduce a new pollution source.
For example, for Cu metal contamination, the reaction process of oxygen and hydrogen with Cu metal is:
H2+O2＝H++O2-+OH-；
Cu2++OH-＝Cu(OH)2。
in the present embodiment, the first gas inlet pipe 41 and the second gas inlet pipe 42 may also be used for delivering an inert gas such as nitrogen to the uniform flow chamber, so as to be used as a process gas to be introduced into the uniform flow chamber when the annealing process is performed. That is, the first air inlet pipeline 41 and the second air inlet pipeline 42 can feed oxygen and nitrogen into the uniform flow cavity respectively, and can also feed inert gas into the uniform flow cavity uniformly. Of course, in practical application, a pipeline for introducing the inert gas into the uniform flow cavity or the cavity 2 may be separately provided.
The uniform flow structure is configured to allow the oxygen and hydrogen to uniformly flow into the chamber 2 after mixing. By means of the uniform flow structure, the leading-in direction of the air flow can be optimized, and the mixed and reacted oxygen and hydrogen can uniformly flow into the cavity 2, so that the difference of the blowing effect caused by uneven air flow distribution can be avoided, the metal pollution in the blowing blind area is fully removed, and the metal pollution, particularly the copper pollution which is difficult to remove, is effectively reduced.
The flow equalizing structure may have various structures, for example, in the present embodiment, as shown in fig. 2A and 2B, the flow equalizing structure includes a flow equalizing plate 43, the flow equalizing plate 43 is, for example, a quartz plate, and divides the chamber body 2 into the flow equalizing space 21 and the process space 22, wherein the flow equalizing space 21 serves as the flow equalizing chamber. Specifically, in the present embodiment, the flow equalizing plate 43 is used to position the flow equalizing space 21 above the process space 22, as shown in fig. 2A, the air outlet end 411 of the first air inlet pipe 41 and the air outlet end 421 of the second air inlet pipe 42 vertically penetrate the flow equalizing plate 43 from the bottom of the cavity 2 and extend into the flow equalizing space 21, that is, the air outlet end 411 of the first air inlet pipe 41 and the air outlet end 421 of the second air inlet pipe 42 are both higher than the upper surface of the flow equalizing plate 43, so as to enable oxygen and hydrogen to be directly introduced into the flow equalizing space 21. In practical applications, the distribution modes of the flow-equalizing space and the process space divided by the flow-equalizing plate are different according to different chamber structures, and the modes of introducing oxygen and hydrogen into the first air inlet pipeline and the second air inlet pipeline respectively are also different accordingly, which can be freely set according to specific situations.
And, a plurality of air outlet holes 431 are provided on the flow equalizing plate 43 for communicating the flow equalizing space 21 with the process space 22. As shown in fig. 4, the oxygen and hydrogen respectively flow into the uniform flow space 21 from the outlet end 411 of the first air inlet pipe 41 and the outlet end 421 of the second air inlet pipe 42 and then mix with each other, and the mixed gas flows into the process space 22 through the respective outlet holes 431. As can be seen from the dotted arrows shown in fig. 4, the mixed gas flows vertically downward into the process space 22, so that the uniformity of the gas flow distribution can be improved, the difference in the purging effect caused by the uneven gas flow distribution is avoided, the metal pollution in the purging blind area is sufficiently removed, and the metal pollution, especially the copper pollution which is difficult to remove, is effectively reduced.
As shown in fig. 2B, the plurality of air outlets 431 are distributed on a plurality of circles which take the center of the radial cross section of the flow equalizing plate 43 as the center and have different radii, and the plurality of air outlets on each circle are uniformly distributed relative to the center of the circle. In this way, the distribution uniformity of the gas flow in the circumferential direction of the process space 22 can be improved, so that the purging effect can be further improved. For example, as shown in fig. 2B, the plurality of outlet holes 431 are distributed on three circumferences, specifically, the radius of the flow equalizing plate 43 is R0; the radii of the three circles are respectively R1, R2 and R3 from large to small.
The diameter size and distribution number of the gas outlet holes 431 can be calculated and tested and optimized according to the total gas flow and the inner diameter of the gas inlet pipeline. In some embodiments, the diameters of the exit holes 431 are different on different circumferences, and the smaller the diameter of the circumference, the smaller the diameter and/or number of exit holes 431 on that circumference. For example, as shown in FIG. 2B, the diameter of the exit hole 431a on a circumference with radius R1 is larger than the diameter of the exit hole 431B on a circumference with radius R2; the diameter of the outlet 431b on the circumference of radius R2 is larger than the diameter of the outlet 431c on the circumference of radius R3. The number of the outlet holes 431a on the circumference of radius R1 is equal to the number of the outlet holes 431b on the circumference of radius R2; the number of the outlet holes 431b on the circumference of the radius R2 is greater than the number of the outlet holes 431c on the circumference of the radius R3.
In some embodiments, in at least one set of two adjacent circles, each of the outlet holes 431 on one of the circles is staggered from each of the outlet holes 431 on the other of the circles. For example, as shown in fig. 2B, the respective outlet holes 431a on the circumference of radius R1 are staggered from the respective outlet holes 431B on the circumference of radius R2; the respective outlet holes 431b on the circumference of radius R2 are staggered from the respective outlet holes 431c on the circumference of radius R3. In other words, for any one of the air outlets 431, an included angle is formed between a line connecting centers of circle centers and a line connecting centers of the air outlets 431 on the adjacent circumference to the circle center.
Specific radius sizes are, for example, 202mm for R0, 170mm for R1, 130mm for R2 and 90mm for R3, provided that the inner diameter of the cavity 2 is 425 mm; also, the number of the respective outlet holes 431a on the circumference of the radius R1 is 24 (only 12 outlet holes 431a are schematically shown in fig. 2B), and the diameter is 4 mm; the number of the respective outlet holes 431B on the circumference of the radius R2 is 24 (only 12 outlet holes 431B are schematically shown in fig. 2B), and the diameter is 3 mm; the number of the respective outlet holes 431c on the circumference of the radius R3 is 16 (only 8 outlet holes 431c are schematically shown in fig. 2B), and the diameter is 2 mm. Moreover, an included angle between a center connecting line between any one of the air outlet holes 431a on the circumference with the radius of R1 and the circle center and a center connecting line between the air outlet hole 431b adjacent to the air outlet hole 431a on the circumference with the radius of R2 and the circle center is 7.5 degrees; the included angle between the central connecting line between the outlet 431b adjacent to the outlet 431a and the center of the circle on the circle with the radius R2 and the central connecting line between the outlet 431c adjacent to the outlet 431c and the center of the circle on the circle with the radius R3 is 7.5 degrees, so that in at least one group of two adjacent circles, each outlet 431 on one circle is staggered with each outlet 431 on the other circle.
In some embodiments, as shown in fig. 3A and 3B, a plurality of first connecting portions 432 are provided on the outer circumferential wall of the flow equalizing plate 43 at intervals along the circumferential direction thereof; a plurality of second connecting parts 23 are correspondingly arranged on the side wall of the cavity 2 at intervals; a positioning groove 231 is provided on the second connecting portion 23, and the first connecting portion 432 is located in the positioning groove 231 to define the position of the flow equalizing plate 43 in the chamber 2. Of course, in practical applications, the positioning groove may also be disposed on the first connecting portion, and the second connecting portion is located in the positioning groove. When the uniform flow plate 43 is installed, the angle of the uniform flow plate 43 in the circumferential direction can be adjusted so that each first connecting portion 432 is not overlapped with each second connecting portion 23 in the vertical direction, and then the uniform flow plate 43 is lifted in the vertical direction until reaching the height position where each first connecting portion 432 is higher than each second connecting portion 23; then, the uniform flow plate 43 is rotated to make the first connecting portions 432 located above the positioning grooves 231 in a one-to-one correspondence; finally, the uniform flow plate 43 is descended until the first connecting portions 432 are located in the positioning grooves 231 one by one, so that the position limitation of the uniform flow plate 43 in the cavity 2 can be realized.
As shown in fig. 1, in the present embodiment, the semiconductor chamber further includes an exhaust structure for exhausting the exhaust gas in the cavity 2, the exhaust structure includes an exhaust port disposed at the bottom of the cavity 2, an exhaust pipe 51 connected to the exhaust port, a protective sleeve 52 sleeved outside the exhaust pipe 51, and a protective gas assembly 55, wherein an annular space 53 is formed between the protective sleeve 52 and the exhaust pipe 51, and an air inlet is disposed in the protective sleeve 52; a shielding gas assembly 55 is connected to the gas inlet for feeding a shielding gas, such as nitrogen or any other inert gas, into the annular space 53. In the process of removing the metal pollutants in the cavity 2 by using the purging device, the protective gas assembly 55 is opened to convey the protective gas into the annular space 53, so that the tail gas which is strong in corrosivity and contains free radicals in the cavity 2 can be prevented from flowing into the annular space 53, and meanwhile, a gas exhaust pipeline in the cavity 2 can be accelerated.
In addition, the gas outlet ends of the exhaust pipe 51 and the protective sleeve 52 are both connected to an exhaust gas treatment system (not shown in the figure), and the protective gas in the annular space 53 flows to the exhaust gas treatment system, so that the purging process is not affected.
In this embodiment, a fixing ring 54 is disposed between the exhaust pipe 51 and the protection sleeve 52 and located downstream of the air inlet of the protection sleeve 2, and the fixing ring 54 is used for supporting the protection sleeve 52 so as to fix the protection sleeve 52 with a long length, thereby preventing the protection sleeve 52 from being damaged due to uneven stress caused by frequent pressure changes. Further, the stationary ring 54 is provided with uniform flow holes spaced in the axial direction thereof for uniformly flowing out the gas in the annular space 53, so that the distribution uniformity of the shielding gas in the circumferential direction of the exhaust pipe 51 can be improved, and the shielding uniformity can be improved.
Specifically, the shielding gas assembly 55 includes a gas source (not shown), an air inlet pipeline 551, and a flow regulating valve 552 and an on-off valve 553 disposed on the air inlet pipeline 551, wherein an air inlet end of the air inlet pipeline 551 is connected to the gas source, and an air outlet end is connected to an air inlet of the protective sleeve 52; the gas source is used for providing protective gas. The flow regulating valve 552 is used to regulate the flow of the shielding gas; the on-off valve 553 controls the on-off of the intake line 551.
In practical application, before the machine testing is carried out, the purging device is utilized to purge the process so as to remove metal pollutants in the cavity 2, so that the smooth start of the test is facilitated, the repeated test is avoided, and the machine testing efficiency is improved. The purging process may also be performed periodically, such as at least once per a certain number of wafers processed or per a certain process time.
As shown in fig. 5, a graph of the relevant parameters of the chamber temperature, the chamber pressure, the nitrogen gas, the hydrogen gas, the oxygen gas, and the like when the purging process is performed using the purging device is shown. Taking the semiconductor chamber shown in fig. 1 as an example, the purging process includes:
step 101, in a boat entering stage, the temperature inside the cavity 2 is 650 ℃, an empty boat enters the cavity 2 from the lower end opening of the cavity 2, and the cavity door at the lower end of the cavity 2 is closed after the empty boat enters the cavity 2; in the process, nitrogen is introduced into the cavity 2 by using the first air inlet pipeline 41 and the second air inlet pipeline 42;
step 102, after the temperature is stabilized, heating the cavity 2 to raise the temperature of the cavity to a purging temperature (for example, 900 ℃), and simultaneously vacuumizing the interior of the cavity 2 to make the pressure of the cavity reach a preset lowest pressure;
103, detecting the leakage rate of the cavity, and stabilizing the pressure of the cavity at a purging pressure (for example, 0.38torr) after the detection is finished;
104, opening the protective gas assembly 55 to introduce protective gas into the annular space 53;
105, after the temperature and the pressure of the cavity are stable, introducing oxygen and hydrogen into the cavity 2 by using the first air inlet pipeline 41 and the second air inlet pipeline 42, and starting a purging stage;
in step 105, firstly, at time t1, the first air inlet pipe 41 is used to introduce oxygen into the cavity 2, and after the flow rate of the oxygen is stable and the cavity is fully filled, the second air inlet pipe 42 is used to introduce hydrogen into the cavity 2 at time t 2; after being sufficiently mixed in the uniform flow space 21, the oxygen and the hydrogen flow into the process space 22 through the respective gas outlet holes 431 in the uniform flow plate 43. The oxygen and the hydrogen react under the conditions of high temperature and low pressure to generate hydroxyl radicals, and the hydroxyl radicals are combined with metal ions on the inner surface of the cavity 2 and are discharged out of the cavity 2 along with the gas flow through the exhaust structure. Due to the introduction of the protective gas into the annular space 53, hydroxyl radicals can be prevented from corroding the exhaust pipe.
In practical applications, the above conditions of high temperature and high pressure can satisfy: the temperature of the chamber is 900 ℃; the chamber pressure is less than 0.5 otrr; the flow rate of the hydrogen gas is more than 10% of the total flow rate of the hydrogen gas and the oxygen gas.
Step 106, after the purging process is completed, firstly stopping introducing hydrogen into the cavity 2 at the time t3, and starting introducing nitrogen into the cavity 2 by using the second air inlet pipeline 42 to remove residual gas in the cavity 2, and maintaining the introduction of oxygen so as to be capable of fully reacting with the residual hydrogen in the cavity 2 for consumption; then, at time t4, the introduction of oxygen into the chamber 2 is stopped, and nitrogen is introduced into the chamber 2 through the first gas inlet line 41 to remove the residual gas in the chamber 2.
Step 107, vacuumizing the cavity 2 to a preset minimum pressure so as to remove residual oxygen, hydrogen and surface products;
step 108, a boat-out stage. The chamber pressure is restored to normal pressure while the chamber temperature is reduced until a standby temperature (e.g., 650 ℃) is reached, and then the empty boat is removed from the cavity 2.
Fig. 6 shows the trend of the copper contamination results obtained after the test of the above-described purging process and the normal annealing process are cyclically performed a plurality of times to verify the purging effect, wherein the ordinate is the number of copper atoms contained per square meter in the chamber; the abscissa is the purge run for this test. The black bar-shaped columns represent the number of copper atoms contained in each square meter of the top surface of the wafer; the white bar indicates the number of copper atoms contained per square meter of the wafer bottom surface. The results prove that: therefore, the semiconductor chamber provided by the embodiment of the invention can effectively remove the metal pollution in the chamber.
In summary, in the semiconductor chamber provided in the embodiments of the present invention, the purging device is used to remove the metal contaminant in the chamber, at least two gas inlet pipes in the purging device are both communicated with the uniform flow chamber of the uniform flow structure, and are used to respectively deliver at least two gases to the uniform flow chamber, so that the at least two gases flow into the chamber after being mixed in the uniform flow chamber, the at least two gases are used to react to generate a radical that can be combined with the metal contaminant, for example, oxygen and hydrogen can react to generate a hydroxyl radical, where OH in the radical can be reacted to generate a hydroxyl radical-Can be combined with metal ions attached to the inner wall of the chamber, and the combined hydroxide can followThe air flow is discharged out of the cavity, so that metal pollution in the cavity can be effectively removed. Meanwhile, by means of the uniform flow structure, the leading-in direction of the air flow can be optimized, and at least two mixed gases can uniformly flow into the cavity, so that the difference of the blowing effect caused by uneven air flow distribution can be avoided, the metal pollution in the blowing blind area is fully removed, and the metal pollution, especially the copper pollution which is difficult to remove, is effectively reduced. According to the semiconductor chamber provided by the embodiment of the invention, the chamber does not need to be disassembled and cleaned, and the equipment maintenance time and the equipment operation cost are reduced, so that the normal operation time of the equipment is increased, the capacity is improved, in addition, the uncertainty and the unstable factors in the subsequent process are reduced, and the process reliability is improved.
As another technical solution, an embodiment of the present invention further provides an annealing apparatus, taking the annealing apparatus shown in fig. 1 as an example, which includes a heating furnace body 1 and a process chamber disposed in the heating furnace body 1, where the process chamber adopts the semiconductor chamber provided in the embodiment of the present invention.
According to the annealing device provided by the embodiment of the invention, by adopting the semiconductor chamber provided by the embodiment of the invention, metal pollution in the chamber can be effectively removed, the chamber does not need to be disassembled or cleaned, and the equipment maintenance time and the equipment operation cost are reduced, so that the normal operation time of the equipment is increased, the productivity is improved, in addition, the uncertainty and unstable factors in the subsequent technological process are reduced, and the technological reliability is improved.
It will be understood that the above embodiments are merely exemplary embodiments taken to illustrate the principles of the present invention, which is not limited thereto. It will be apparent to those skilled in the art that various modifications and improvements can be made without departing from the spirit and substance of the invention, and these modifications and improvements are also considered to be within the scope of the invention.
Claims (10)
1. A semiconductor chamber comprises a chamber body and is characterized by also comprising a purging device for removing metal pollutants in the chamber body, wherein the purging device comprises at least two air inlet pipelines and a uniform flow structure,
the flow equalizing structure is arranged in the cavity and is provided with a flow equalizing cavity;
the at least two gas inlet pipelines are communicated with the uniform flow cavity and used for conveying at least two gases to the uniform flow cavity so that the at least two gases flow into the cavity after being mixed in the uniform flow cavity, and the at least two gases are used for reacting to generate free radicals capable of being combined with the metal pollutants.
2. The semiconductor chamber of claim 1, wherein the flow equalizing structure comprises a flow equalizing plate that divides the chamber body into a flow equalizing space and a process space, the flow equalizing space serving as the flow equalizing chamber; a plurality of air outlet holes are formed in the uniform flow plate and used for communicating the uniform flow space with the process space; and the air outlet ends of the at least two air inlet pipelines are communicated with the uniform flow space.
3. The semiconductor chamber of claim 2, wherein the flow distribution plate is configured to position the flow distribution space above the process space; the air outlet ends of the at least two air inlet pipelines vertically penetrate through the uniform flow plate from the bottom of the cavity upwards and extend into the uniform flow space.
4. The semiconductor chamber of claim 2 or 3, wherein the plurality of gas outlet holes are distributed on a plurality of circles having different radii and being centered at a center of a radial cross section of the flow equalizing plate, and the plurality of gas outlet holes on each of the circles are uniformly distributed with respect to the center of the circle;
the diameters of the air outlet holes on different circumferences are different, and the smaller the diameter of the circumference is, the smaller the diameter and/or the number of the air outlet holes on the circumference is; and/or the presence of a gas in the gas,
in at least one set of two adjacent circles, each of the air outlet holes on one of the circles is staggered with each of the air outlet holes on the other of the circles.
5. The semiconductor chamber according to claim 2 or 3, wherein a plurality of first connecting portions are provided on an outer peripheral wall of the flow equalizing plate at intervals along a circumferential direction thereof; a plurality of second connecting parts are correspondingly arranged on the side wall of the cavity at intervals;
a positioning groove is formed in the first connecting part, and the second connecting part is located in the positioning groove; or a positioning groove is arranged on the second connecting part, and the first connecting part is positioned in the positioning groove to limit the position of the flow homogenizing plate in the cavity.
6. The semiconductor chamber of claim 1, further comprising an exhaust structure for exhausting exhaust gas from the chamber, wherein the exhaust structure comprises an exhaust port disposed at the bottom of the chamber, an exhaust pipe connected to the exhaust port, a protective sleeve disposed outside the exhaust pipe, and a protective gas assembly, wherein an annular space is formed between the protective sleeve and the exhaust pipe, and an air inlet is disposed in the protective sleeve; the protective gas component is connected with the gas inlet and used for conveying protective gas to the annular space, and the protective gas is used for preventing tail gas containing the free radicals from corroding the exhaust pipe.
7. The semiconductor chamber as claimed in claim 6, wherein a fixing ring is disposed between the exhaust pipe and the protection sleeve and downstream of the gas inlet, the fixing ring being used for supporting the protection sleeve, and flow equalizing holes are disposed in the fixing ring at intervals along an axial direction thereof for allowing the gas in the annular space to uniformly flow out.
8. The semiconductor chamber of claim 6, wherein the shielding gas assembly comprises a gas source, a gas inlet line, and a flow regulating valve and a shut-off valve disposed on the gas inlet line, wherein a gas inlet end of the gas inlet line is connected to the gas source and a gas outlet end is connected to the gas inlet; the gas source is used for providing the protective gas.
9. The semiconductor chamber of claim 1, wherein each of the at least two gas inlet lines is further configured to deliver an inert gas to the flow homogenizing chamber as a process gas.
10. An annealing apparatus comprising a heating furnace body and a process chamber provided in the heating furnace body, characterized in that the process chamber employs the semiconductor chamber according to any one of claims 1 to 9.
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| CN202010856751.9A CN111947450A (en) | 2020-08-24 | 2020-08-24 | Semiconductor chamber and annealing device |
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