SG11201407467YA - Polishing composition, polishing method using same, and method for producing substrate - Google Patents

Polishing composition, polishing method using same, and method for producing substrate

Info

Publication number
SG11201407467YA
SG11201407467YA SG11201407467YA SG11201407467YA SG11201407467YA SG 11201407467Y A SG11201407467Y A SG 11201407467YA SG 11201407467Y A SG11201407467Y A SG 11201407467YA SG 11201407467Y A SG11201407467Y A SG 11201407467YA SG 11201407467Y A SG11201407467Y A SG 11201407467YA
Authority
SG
Singapore
Prior art keywords
sulfonic acid
polishing
acid
abrasive grit
polishing composition
Prior art date
Application number
SG11201407467YA
Inventor
Yasuyuki Yamato
Tomohiko Akatsuka
Original Assignee
Fujimi Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujimi Inc filed Critical Fujimi Inc
Publication of SG11201407467YA publication Critical patent/SG11201407467YA/en

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1436—Composite particles, e.g. coated particles
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • H01L21/31055—Planarisation of the insulating layers involving a dielectric removal step the removal being a chemical etching step, e.g. dry etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials

Abstract

(i2) mwu ft iz s-5 iv x m £ titz s issaj n d9) mm IHMMi _ r4T» allium 2013 if 11 £21 0(21.11.2013) w ,p 0 |PCT (10) WO 2013/172111 A1 (51) H01L 21/304 (2006.01) B24B 37/00 (2012.01) (21) (22) (25) (26) @(8&M©Wl§: (30) fiBfcfif '— 1 £: 2012-114596 2012 ^5^ 18 0(18.05.2012) JP (71) tiJUA: >=l —|l/ — K(FUJIMI INCORPORATED) [JP/JP]; T 4528502 ^ g 1 Site 1 Ai- chi (JP). (72) ^ BJ # : X ?Q ^ 5. (YAMATO, Yasuyuki); T 4528502 5IrtTSfttffiSB7±fefI —T g 1 Stfel 7 Vs-f >=l— /Kb—T'V K l*l Aichi (JI>). IB (AKATSUKA, Tomo- = hiko); T 4528502 m £D !ft : M SlTfT EABjtfepM — — TgJ#±fc1 tt5££tt 7^5-T>3-TK __ U— T y K Aichi(JP). = (74) ttlA: ®Ba M, ^(OMDA, Makoto et al); T = 5008731 iK^RlK^rtT^EBT — T g 1 2#ffi1 = Gifu (JP). (8i) (^ro&i^PBy. IS ft nj f b): AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. (84) *!£H (asrofci^isy > ±T(Dmm(Dfcm% 11^ nlfb): ARIPO (BW, GM, KE, GH, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW), 3. — =j V T (AM, AZ, BY, KG, KZ, RU, TJ, TM), 3 — • V / ^ (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG). - (&&£ 21 &(3)) C09K 3/14 (2006.01) PCT/JP2013/060347 2013 ^4^ 4 0(04.04.2013) 0*1S 0*1S = (54) Title: POLISHING COMPOSITION, POLISHING METHOD USING SAME, AND METHOD FOR PRODUCING SUB­ STRATE i~H (57) Abstract: This polishing composition contains an abrasive grit and water-soluble a polymer. The water-soluble polymer is an ^ anionic compound having an acid dissociation constant (pKa) of no greater than 3. Cited as specific examples of such compound a are polyvinyl sulfonic acid, polystyrene sulfonic acid, polyallyl sulfonic acid, polyacrylic acid ethyl sulfonic acid, polyacrylic acid f— butyl sulfonic acid, poly(2-acrylamide-2-methylpropane sulfonic acid), and polyisoprene sulfonic acid. The abrasive grit exhibits a ^ negative zeta potential at a pH of 3.5 and lower. Colloidal silica can be cited as a specific example of such an abrasive grit. 2 (57) Site: 3JsTF0>B&« o K a LTIA, *°U rj TpJ 7 ts'JT<7 'J n 'J *°'J (2-7<7 U;u7 5 K-2-y , TK'MV^V IT bti-Sc PH3. sjaTlcfci^-c^ro-tf— 1> LTIi> =i •'f bti-So
SG11201407467YA 2012-05-18 2013-04-04 Polishing composition, polishing method using same, and method for producing substrate SG11201407467YA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012114596A JP5957292B2 (en) 2012-05-18 2012-05-18 Polishing composition, polishing method using the same, and substrate manufacturing method
PCT/JP2013/060347 WO2013172111A1 (en) 2012-05-18 2013-04-04 Polishing composition, polishing method using same, and method for producing substrate

Publications (1)

Publication Number Publication Date
SG11201407467YA true SG11201407467YA (en) 2014-12-30

Family

ID=49583530

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201407467YA SG11201407467YA (en) 2012-05-18 2013-04-04 Polishing composition, polishing method using same, and method for producing substrate

Country Status (8)

Country Link
US (1) US9422454B2 (en)
EP (1) EP2851937A4 (en)
JP (1) JP5957292B2 (en)
KR (1) KR102073260B1 (en)
CN (1) CN104285284B (en)
SG (1) SG11201407467YA (en)
TW (1) TWI572702B (en)
WO (1) WO2013172111A1 (en)

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US9583359B2 (en) * 2014-04-04 2017-02-28 Fujifilm Planar Solutions, LLC Polishing compositions and methods for selectively polishing silicon nitride over silicon oxide films
WO2016132952A1 (en) * 2015-02-20 2016-08-25 株式会社フジミインコーポレーテッド Polishing composition
KR101682085B1 (en) * 2015-07-09 2016-12-02 주식회사 케이씨텍 Slurry composition for tungsten polishing
CN108367410B (en) * 2015-12-09 2019-11-01 柯尼卡美能达株式会社 The regeneration method of grinding-material slurry
US20190085207A1 (en) * 2016-03-25 2019-03-21 Fujimi Incorporated Polishing composition for object to be polished having metal-containing layer
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Also Published As

Publication number Publication date
EP2851937A4 (en) 2016-01-13
KR20150014967A (en) 2015-02-09
US20150132955A1 (en) 2015-05-14
KR102073260B1 (en) 2020-02-04
WO2013172111A1 (en) 2013-11-21
TW201404875A (en) 2014-02-01
US9422454B2 (en) 2016-08-23
JP5957292B2 (en) 2016-07-27
CN104285284A (en) 2015-01-14
JP2013243208A (en) 2013-12-05
TWI572702B (en) 2017-03-01
CN104285284B (en) 2017-09-05
EP2851937A1 (en) 2015-03-25

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