SG11201908432TA - New formulation for deposition of silicon doped hafnium oxide as ferroelectric materials - Google Patents

New formulation for deposition of silicon doped hafnium oxide as ferroelectric materials

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Publication number
SG11201908432TA
SG11201908432TA SG11201908432TA SG11201908432TA SG 11201908432T A SG11201908432T A SG 11201908432TA SG 11201908432T A SG11201908432T A SG 11201908432TA SG 11201908432T A SG11201908432T A SG 11201908432TA
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SG
Singapore
Prior art keywords
international
tempe
hafnium oxide
march
silicon doped
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Inventor
Xinjian Lei
Matthew Macdonald
Moo-Sung Kim
Se-Won Lee
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Versum Materials Us Llc
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Application filed by Versum Materials Us Llc filed Critical Versum Materials Us Llc
Publication of SG11201908432TA publication Critical patent/SG11201908432TA/en

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    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
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    • C23C16/405—Oxides of refractory metals or yttrium
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    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
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Abstract

INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property Organization International Bureau (43) International Publication Date 20 September 2018 (20.09.2018) WIPO I PCT IiiimmolionsonolomolomollumonnovoimIE (10) International Publication Number WO 2018/170125 Al (51) International Patent Classification: C23C 16/40 (2006.01) C23C 16/56 (2006.01) C23C 16/455 (2006.01) (21) International Application Number: PCT/US2018/022430 (22) International Filing Date: 14 March 2018 (14.03.2018) (25) Filing Language: English (26) Publication Language: English (30) Priority Data: 62/471,619 15 March 2017 (15.03.2017) US 62/477,804 28 March 2017 (28.03.2017) US 15/914,962 07 March 2018 (07.03.2018) US (71) Applicant: VERSUM MATERIALS US, LLC [US/US]; 8555 South River Parkway, Tempe, AZ 85284 (US). (72) Inventors: LEI, Xinjian; 8555 South River Parkway, Tempe, AZ 85284 (US). MACDONALD, Matthew, R.; 8555 South River Parkway, Tempe, AZ 85284 (US). KIM, Moo-Sung; 8555 South River Parkway, Tempe, AZ 85284 (US). LEE, Se-won; 8555 South River Parkway, Tempe, AZ 85284 (US). = (74) Agent: NEAGLE, Damon, A.; Design IP, P.C., 5050 W. Tilghman Street, Suite 435, Allentown, PA 18104 (US). (81) Designated States (unless otherwise indicated, for every kind of national protection available): AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. (84) Designated States (unless otherwise indicated, for every kind of regional protection available): ARIPO (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, TJ, TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG). Declarations under Rule 4.17: — of inventorship (Rule 4.17(iv)) Published: — with international search report (Art. 21(3)) before the expiration of the time limit for amending the claims and to be republished in the event of receipt of amendments (Rule 48.2(h)) 1-1 kr) 1-1 O N 1-1 00 1-1 O C (54) Title: NEW FORMULATION FOR DEPOSITION OF SILICON DOPED HAFNIUM OXIDE AS FERROELECTRIC MATERIALS Homogeneous Si-doping Si + HF is introduced in every cycle x cycles SI:Hf0 2 Substrate —4. Figure 2 (57) : In one aspect, the invention is formulations comprising both organoaminohafnium and organoaminosilane precursor compounds that allows anchoring both silicon-containing fragments and hafnium-containing fragments onto a given surface having hy- droxyl groups to deposit silicon doped hafnium oxide having a silicon doping level ranging from 0.5 to 8 mol%, suitable as ferroelectric material. In another aspect, the invention is methods and systems for depositing the silicon doped hafnium oxide films as ferroelectric materials using the formulations. Amorphous Si:Hf0 2 Thermal anneal Crystalline SiHf0 2 4-- Substrate
SG11201908432T 2017-03-15 2018-03-14 New formulation for deposition of silicon doped hafnium oxide as ferroelectric materials SG11201908432TA (en)

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US201762471619P 2017-03-15 2017-03-15
US201762477804P 2017-03-28 2017-03-28
US15/914,962 US11193206B2 (en) 2017-03-15 2018-03-07 Formulation for deposition of silicon doped hafnium oxide as ferroelectric materials
PCT/US2018/022430 WO2018170125A1 (en) 2017-03-15 2018-03-14 New formulation for deposition of silicon doped hafnium oxide as ferroelectric materials

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