SG11201404872SA - Carbon dopant gas and co-flow for implant beam and source life performance improvement - Google Patents

Carbon dopant gas and co-flow for implant beam and source life performance improvement

Info

Publication number
SG11201404872SA
SG11201404872SA SG11201404872SA SG11201404872SA SG11201404872SA SG 11201404872S A SG11201404872S A SG 11201404872SA SG 11201404872S A SG11201404872S A SG 11201404872SA SG 11201404872S A SG11201404872S A SG 11201404872SA SG 11201404872S A SG11201404872S A SG 11201404872SA
Authority
SG
Singapore
Prior art keywords
flow
performance improvement
dopant gas
life performance
source life
Prior art date
Application number
SG11201404872SA
Inventor
Oleg Byl
Edward A Sturm
Ying Tang
Sharad N Yedave
Joseph D Sweeney
Steven G Sergi
Barry Lewis Chambers
Original Assignee
Advanced Tech Materials
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Tech Materials filed Critical Advanced Tech Materials
Publication of SG11201404872SA publication Critical patent/SG11201404872SA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/08—Ion sources; Ion guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/022—Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube
SG11201404872SA 2012-02-14 2013-02-13 Carbon dopant gas and co-flow for implant beam and source life performance improvement SG11201404872SA (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201261598817P 2012-02-14 2012-02-14
US201261625571P 2012-04-17 2012-04-17
PCT/US2013/025840 WO2013122986A1 (en) 2012-02-14 2013-02-13 Carbon dopant gas and co-flow for implant beam and source life performance improvement

Publications (1)

Publication Number Publication Date
SG11201404872SA true SG11201404872SA (en) 2014-09-26

Family

ID=48984641

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201404872SA SG11201404872SA (en) 2012-02-14 2013-02-13 Carbon dopant gas and co-flow for implant beam and source life performance improvement

Country Status (7)

Country Link
US (2) US9960042B2 (en)
EP (2) EP2815424B1 (en)
KR (4) KR20220025123A (en)
CN (2) CN104272433B (en)
SG (1) SG11201404872SA (en)
TW (1) TWI632598B (en)
WO (1) WO2013122986A1 (en)

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US10256069B2 (en) * 2016-11-24 2019-04-09 Axcelis Technologies, Inc. Phosphorous trifluoride co-gas for carbon implants
US10361081B2 (en) * 2016-11-24 2019-07-23 Axcelis Technologies, Inc. Phosphine co-gas for carbon implants
CN111492458B (en) * 2017-12-15 2024-04-12 恩特格里斯公司 Methods and assemblies for plasma immersion gun (PFG) operation using fluorine-containing and inert gases
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Also Published As

Publication number Publication date
US10354877B2 (en) 2019-07-16
US9960042B2 (en) 2018-05-01
WO2013122986A1 (en) 2013-08-22
TW201338022A (en) 2013-09-16
EP2815424A4 (en) 2015-10-14
CN108565198A (en) 2018-09-21
EP3267470A3 (en) 2018-04-18
EP2815424B1 (en) 2017-08-16
KR20210070400A (en) 2021-06-14
CN104272433B (en) 2018-06-05
CN104272433A (en) 2015-01-07
EP3267470A2 (en) 2018-01-10
KR20220025123A (en) 2022-03-03
WO2013122986A8 (en) 2014-08-28
TWI632598B (en) 2018-08-11
EP2815424A1 (en) 2014-12-24
US20180211839A1 (en) 2018-07-26
KR20200098716A (en) 2020-08-20
US20160020102A1 (en) 2016-01-21
KR20140133571A (en) 2014-11-19

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