SG11201401945WA - Crucible for the production of crystalline semiconductor ingots and process for manufacturing the same - Google Patents
Crucible for the production of crystalline semiconductor ingots and process for manufacturing the sameInfo
- Publication number
- SG11201401945WA SG11201401945WA SG11201401945WA SG11201401945WA SG11201401945WA SG 11201401945W A SG11201401945W A SG 11201401945WA SG 11201401945W A SG11201401945W A SG 11201401945WA SG 11201401945W A SG11201401945W A SG 11201401945WA SG 11201401945W A SG11201401945W A SG 11201401945WA
- Authority
- SG
- Singapore
- Prior art keywords
- crucible
- manufacturing
- production
- same
- crystalline semiconductor
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 2
- 238000000034 method Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/002—Crucibles or containers for supporting the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/14—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method characterised by the seed, e.g. its crystallographic orientation
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B28/00—Production of homogeneous polycrystalline material with defined structure
- C30B28/04—Production of homogeneous polycrystalline material with defined structure from liquids
- C30B28/06—Production of homogeneous polycrystalline material with defined structure from liquids by normal freezing or freezing under temperature gradient
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
- C30B35/002—Crucibles or containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
- H01L31/182—Special manufacturing methods for polycrystalline Si, e.g. Si ribbon, poly Si ingots, thin films of polycrystalline Si
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/546—Polycrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Preparation Of Compounds By Using Micro-Organisms (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP11193086.3A EP2604728A1 (en) | 2011-12-12 | 2011-12-12 | Crucible for the production of crystalline semiconductor ingots and process for manufacturing the same |
PCT/EP2012/075021 WO2013087598A1 (en) | 2011-12-12 | 2012-12-11 | Crucible for the production of crystalline semiconductor ingots and process for manufacturing the same |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201401945WA true SG11201401945WA (en) | 2014-09-26 |
Family
ID=47326175
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201401945WA SG11201401945WA (en) | 2011-12-12 | 2012-12-11 | Crucible for the production of crystalline semiconductor ingots and process for manufacturing the same |
Country Status (8)
Country | Link |
---|---|
EP (2) | EP2604728A1 (en) |
KR (1) | KR20140101822A (en) |
CN (1) | CN103987881A (en) |
ES (1) | ES2596255T3 (en) |
SG (1) | SG11201401945WA (en) |
TW (1) | TWI555887B (en) |
UA (1) | UA111753C2 (en) |
WO (1) | WO2013087598A1 (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102035297B1 (en) * | 2017-10-20 | 2019-10-22 | 한국생산기술연구원 | Angular structure with improved fracture toughness and manufacturing method and pressure tank |
CN109858145B (en) * | 2019-01-30 | 2023-08-04 | 金川集团股份有限公司 | System for processing intersecting line of circular tube |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2175594B1 (en) | 1972-03-15 | 1974-09-13 | Radiotechnique Compelec | |
JPH0428512A (en) * | 1990-05-24 | 1992-01-31 | Toray Ind Inc | Manufacture of cuppy fiber-reinforced composite body |
US6423136B1 (en) * | 2000-03-20 | 2002-07-23 | Carl Francis Swinehart | Crucible for growing macrocrystals |
US7867334B2 (en) | 2004-03-29 | 2011-01-11 | Kyocera Corporation | Silicon casting apparatus and method of producing silicon ingot |
US7344596B2 (en) | 2005-08-25 | 2008-03-18 | Crystal Systems, Inc. | System and method for crystal growing |
US20100089308A1 (en) * | 2008-10-15 | 2010-04-15 | Japan Super Quartz Corporation | Silica glass crucible and method for pulling single-crystal silicon |
JP2008088045A (en) | 2006-09-05 | 2008-04-17 | Sumco Corp | Manufacture process of silicon single crystal and manufacture process of silicon wafer |
FR2908125B1 (en) | 2006-11-02 | 2009-11-20 | Commissariat Energie Atomique | PROCESS FOR PURIFYING METALLURGICAL SILICON BY DIRECTED SOLIDIFICATION |
TW200846509A (en) * | 2007-01-19 | 2008-12-01 | Vesuvius Crucible Co | Crucible and filling method for melting a non-ferrous product |
RU2011101453A (en) | 2008-06-16 | 2012-07-27 | ДжиТи СОЛАР ИНКОРПОРЕЙТЕД (US) | SYSTEMS AND METHODS OF GROWING SINGLE CRYSTAL SILICON BARS BY DIRECTIONAL CURING |
CN201506711U (en) * | 2009-09-30 | 2010-06-16 | 常州天合光能有限公司 | Crucible for casting ingot |
JP5293615B2 (en) | 2010-01-08 | 2013-09-18 | 信越半導体株式会社 | Single crystal production equipment |
JP5480036B2 (en) | 2010-03-03 | 2014-04-23 | グローバルウェーハズ・ジャパン株式会社 | Method for producing silicon single crystal |
CN201678762U (en) * | 2010-03-05 | 2010-12-22 | 上海杰姆斯电子材料有限公司 | Graphite crucible for preparing monocrystalline silicon with Czochralski method |
-
2011
- 2011-12-12 EP EP11193086.3A patent/EP2604728A1/en not_active Withdrawn
-
2012
- 2012-11-12 UA UAA201404524A patent/UA111753C2/en unknown
- 2012-12-10 TW TW101146312A patent/TWI555887B/en not_active IP Right Cessation
- 2012-12-11 KR KR1020147017698A patent/KR20140101822A/en not_active Application Discontinuation
- 2012-12-11 SG SG11201401945WA patent/SG11201401945WA/en unknown
- 2012-12-11 CN CN201280060933.9A patent/CN103987881A/en active Pending
- 2012-12-11 WO PCT/EP2012/075021 patent/WO2013087598A1/en active Application Filing
- 2012-12-11 EP EP12798745.1A patent/EP2791398B1/en not_active Not-in-force
- 2012-12-11 ES ES12798745.1T patent/ES2596255T3/en active Active
Also Published As
Publication number | Publication date |
---|---|
EP2604728A1 (en) | 2013-06-19 |
TW201335447A (en) | 2013-09-01 |
TWI555887B (en) | 2016-11-01 |
UA111753C2 (en) | 2016-06-10 |
EP2791398B1 (en) | 2016-07-13 |
ES2596255T3 (en) | 2017-01-05 |
WO2013087598A1 (en) | 2013-06-20 |
KR20140101822A (en) | 2014-08-20 |
EP2791398A1 (en) | 2014-10-22 |
CN103987881A (en) | 2014-08-13 |
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