SG11201401263PA - Method for manufacturing single-crystal silicon - Google Patents

Method for manufacturing single-crystal silicon

Info

Publication number
SG11201401263PA
SG11201401263PA SG11201401263PA SG11201401263PA SG11201401263PA SG 11201401263P A SG11201401263P A SG 11201401263PA SG 11201401263P A SG11201401263P A SG 11201401263PA SG 11201401263P A SG11201401263P A SG 11201401263PA SG 11201401263P A SG11201401263P A SG 11201401263PA
Authority
SG
Singapore
Prior art keywords
crystal silicon
manufacturing single
manufacturing
silicon
crystal
Prior art date
Application number
SG11201401263PA
Inventor
Hideo Kato
Shinichi Kyufu
Original Assignee
Siltronic Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siltronic Ag filed Critical Siltronic Ag
Publication of SG11201401263PA publication Critical patent/SG11201401263PA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • C30B35/002—Crucibles or containers
SG11201401263PA 2011-12-26 2012-07-10 Method for manufacturing single-crystal silicon SG11201401263PA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2011283330A JP5509188B2 (en) 2011-12-26 2011-12-26 Method for producing single crystal silicon
PCT/EP2012/063494 WO2013097953A1 (en) 2011-12-26 2012-07-10 Method for manufacturing single-crystal silicon

Publications (1)

Publication Number Publication Date
SG11201401263PA true SG11201401263PA (en) 2014-08-28

Family

ID=46466580

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201401263PA SG11201401263PA (en) 2011-12-26 2012-07-10 Method for manufacturing single-crystal silicon

Country Status (7)

Country Link
US (1) US9702055B2 (en)
EP (1) EP2798102A1 (en)
JP (1) JP5509188B2 (en)
KR (1) KR101620770B1 (en)
CN (1) CN104011271B (en)
SG (1) SG11201401263PA (en)
WO (1) WO2013097953A1 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109477239A (en) * 2016-09-23 2019-03-15 胜高股份有限公司 Quartz glass crucibles and its manufacturing method and used quartz glass crucibles monocrystalline silicon manufacturing method
JP6743753B2 (en) * 2017-04-27 2020-08-19 株式会社Sumco Silicon single crystal pulling method
CN107460538B (en) * 2017-07-19 2019-02-01 内蒙古中环光伏材料有限公司 A method of it improves and throws monocrystalline silicon crystal forming rate again
CN109056055B (en) * 2018-09-28 2020-11-03 包头美科硅能源有限公司 Production method of silicon single crystal rod

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5976247A (en) 1995-06-14 1999-11-02 Memc Electronic Materials, Inc. Surface-treated crucibles for improved zero dislocation performance
JP2000247788A (en) 1999-02-26 2000-09-12 Shin Etsu Handotai Co Ltd Production of silicon single crystal
US6319313B1 (en) 1999-03-15 2001-11-20 Memc Electronic Materials, Inc. Barium doping of molten silicon for use in crystal growing process
WO2001063023A1 (en) * 2000-02-22 2001-08-30 Shin-Etsu Handotai Co.,Ltd. Method for growing single crystal of semiconductor
WO2002014587A1 (en) * 2000-08-15 2002-02-21 Shin-Etsu Handotai Co., Ltd. Quartz crucible and method for producing single crystal using the same
US7118789B2 (en) * 2001-07-16 2006-10-10 Heraeus Shin-Etsu America Silica glass crucible
US6641663B2 (en) * 2001-12-12 2003-11-04 Heracus Shin-Estu America Silica crucible with inner layer crystallizer and method
JP4004783B2 (en) * 2001-11-26 2007-11-07 シルトロニック・ジャパン株式会社 Quartz crucible for single crystal growth
JP4427775B2 (en) * 2002-03-29 2010-03-10 ジャパンスーパークォーツ株式会社 Surface-modified quartz glass crucible and its surface modification method
JP2005145731A (en) * 2003-11-12 2005-06-09 Kuramoto Seisakusho Co Ltd Crystallized quartz crucible
JP4517953B2 (en) * 2005-06-22 2010-08-04 株式会社Ｓｕｍｃｏ Method for producing silicon single crystal
US7427327B2 (en) 2005-09-08 2008-09-23 Heraeus Shin-Etsu America, Inc. Silica glass crucible with barium-doped inner wall
JP4986452B2 (en) * 2005-12-28 2012-07-25 シルトロニック・ジャパン株式会社 Method and apparatus for producing silicon single crystal
TWI408259B (en) * 2006-09-28 2013-09-11 Shinetsu Quartz Prod Silica glass crucible with barium-doped inner wall
JP2010030867A (en) * 2008-07-31 2010-02-12 Sumco Corp Method for growing silicon single crystal
US20120006254A1 (en) 2009-02-10 2012-01-12 Masaru Fujishiro Quartz glass crucible for pulling single-crystal silicon and process for producing single-crystal silicon
EP2431338B1 (en) 2009-04-28 2021-08-25 Shin-Etsu Quartz Products Co., Ltd. Silica vessel

Also Published As

Publication number Publication date
JP2013133243A (en) 2013-07-08
US20150040820A1 (en) 2015-02-12
WO2013097953A1 (en) 2013-07-04
CN104011271A (en) 2014-08-27
CN104011271B (en) 2017-11-07
US9702055B2 (en) 2017-07-11
KR20140097425A (en) 2014-08-06
JP5509188B2 (en) 2014-06-04
KR101620770B1 (en) 2016-05-12
EP2798102A1 (en) 2014-11-05

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