SG105513A1 - Low defect density, ideal oxygen precipitating silicon - Google Patents

Low defect density, ideal oxygen precipitating silicon

Info

Publication number
SG105513A1
SG105513A1 SG200105905A SG200105905A SG105513A1 SG 105513 A1 SG105513 A1 SG 105513A1 SG 200105905 A SG200105905 A SG 200105905A SG 200105905 A SG200105905 A SG 200105905A SG 105513 A1 SG105513 A1 SG 105513A1
Authority
SG
Singapore
Prior art keywords
defect density
low defect
precipitating silicon
ideal oxygen
oxygen precipitating
Prior art date
Application number
SG200105905A
Other languages
English (en)
Inventor
Falster Robert
A Makrgraf Steve
A Mcquaid Seamus
C Holzer Joseph
Mutti Paolo
K Johnson Bayard
Cornara Marco
Gambaro Daniela
Olmo Massimiliano
Original Assignee
Memc Electronics Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Memc Electronics Materials Inc filed Critical Memc Electronics Materials Inc
Publication of SG105513A1 publication Critical patent/SG105513A1/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
    • H01L21/3225—Thermally inducing defects using oxygen present in the silicon body for intrinsic gettering
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/203—Controlling or regulating the relationship of pull rate (v) to axial thermal gradient (G)
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/206—Controlling or regulating the thermal history of growing the ingot
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/02—Heat treatment
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/21—Circular sheet or circular blank
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/249921—Web or sheet containing structurally defined element or component
    • Y10T428/249953—Composite having voids in a component [e.g., porous, cellular, etc.]
    • Y10T428/249967—Inorganic matrix in void-containing component
    • Y10T428/249969—Of silicon-containing material [e.g., glass, etc.]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Thermal Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
SG200105905A 1997-04-09 1998-04-09 Low defect density, ideal oxygen precipitating silicon SG105513A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US4184597P 1997-04-09 1997-04-09
US6231697P 1997-10-17 1997-10-17

Publications (1)

Publication Number Publication Date
SG105513A1 true SG105513A1 (en) 2004-08-27

Family

ID=26718604

Family Applications (2)

Application Number Title Priority Date Filing Date
SG200601434-4A SG151096A1 (en) 1997-04-09 1998-04-09 Low defect density, ideal oxygen precipitating silicon
SG200105905A SG105513A1 (en) 1997-04-09 1998-04-09 Low defect density, ideal oxygen precipitating silicon

Family Applications Before (1)

Application Number Title Priority Date Filing Date
SG200601434-4A SG151096A1 (en) 1997-04-09 1998-04-09 Low defect density, ideal oxygen precipitating silicon

Country Status (9)

Country Link
US (5) US6190631B1 (ko)
EP (2) EP0973962B1 (ko)
JP (3) JP3449729B2 (ko)
KR (2) KR20010006202A (ko)
CN (1) CN1316072C (ko)
DE (2) DE69841714D1 (ko)
MY (2) MY135749A (ko)
SG (2) SG151096A1 (ko)
WO (1) WO1998045507A1 (ko)

Families Citing this family (103)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6503594B2 (en) 1997-02-13 2003-01-07 Samsung Electronics Co., Ltd. Silicon wafers having controlled distribution of defects and slip
US5994761A (en) * 1997-02-26 1999-11-30 Memc Electronic Materials Spa Ideal oxygen precipitating silicon wafers and oxygen out-diffusion-less process therefor
DE69841714D1 (de) * 1997-04-09 2010-07-22 Memc Electronic Materials Silicium mit niedriger Fehlerdichte und idealem Sauerstoffniederschlag
CN1280455C (zh) 1997-04-09 2006-10-18 Memc电子材料有限公司 低缺陷浓度的硅
US6379642B1 (en) 1997-04-09 2002-04-30 Memc Electronic Materials, Inc. Vacancy dominated, defect-free silicon
US5981534A (en) 1998-09-25 1999-11-09 American Cyanamid Company Fungicidal 6-(2,6-difluoro-4-alkoxyphenyl)-triazolopyrimidines
JP3943717B2 (ja) 1998-06-11 2007-07-11 信越半導体株式会社 シリコン単結晶ウエーハ及びその製造方法
JP2003517412A (ja) * 1998-06-26 2003-05-27 エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド 任意に大きい直径を有する無欠陥シリコン結晶の成長方法
EP1484789A1 (en) * 1998-08-05 2004-12-08 MEMC Electronic Materials, Inc. Non-uniform minority carrier lifetime distributions in high performance silicon power devices
US6828690B1 (en) 1998-08-05 2004-12-07 Memc Electronic Materials, Inc. Non-uniform minority carrier lifetime distributions in high performance silicon power devices
EP1110240B1 (en) 1998-09-02 2006-10-25 MEMC Electronic Materials, Inc. Process for preparing an ideal oxygen precipitating silicon wafer
EP1914796B1 (en) * 1998-09-02 2012-06-06 MEMC Electronic Materials, Inc. Method of forming non-oxygen precipitating Czochralski silicon wafers
EP1713121A3 (en) * 1998-09-02 2007-08-15 MEMC Electronic Materials, Inc. Silicon on insulator structure from low defect density single crystal silicon
CN1181522C (zh) 1998-09-02 2004-12-22 Memc电子材料有限公司 具有改进的内部收气的热退火单晶硅片及其热处理工艺
US6336968B1 (en) * 1998-09-02 2002-01-08 Memc Electronic Materials, Inc. Non-oxygen precipitating czochralski silicon wafers
EP1114454A2 (en) 1998-09-02 2001-07-11 MEMC Electronic Materials, Inc. Silicon on insulator structure from low defect density single crystal silicon
US6284039B1 (en) 1998-10-14 2001-09-04 Memc Electronic Materials, Inc. Epitaxial silicon wafers substantially free of grown-in defects
DE69908965T2 (de) 1998-10-14 2004-05-13 Memc Electronic Materials, Inc. Wärmegetempertes einkristallines silizium mit niedriger fehlerdichte
DE69902555T2 (de) * 1998-10-14 2002-12-19 Memc Electronic Materials Verfahren zur herstellung fehlerfreier siliziumkristalle, welches variable verfahrensbedingungen zulässt
US6312516B2 (en) 1998-10-14 2001-11-06 Memc Electronic Materials, Inc. Process for preparing defect free silicon crystals which allows for variability in process conditions
JP2000154070A (ja) * 1998-11-16 2000-06-06 Suminoe Textile Co Ltd セラミックス三次元構造体及びその製造方法
JP3601324B2 (ja) * 1998-11-19 2004-12-15 信越半導体株式会社 結晶欠陥の少ないシリコン単結晶ウエーハ及びその製造方法
TW505710B (en) 1998-11-20 2002-10-11 Komatsu Denshi Kinzoku Kk Production method for silicon single crystal and production device for single crystal ingot, and heat treating method for silicon single crystal wafer
US6284384B1 (en) 1998-12-09 2001-09-04 Memc Electronic Materials, Inc. Epitaxial silicon wafer with intrinsic gettering
JP2000277404A (ja) * 1999-03-26 2000-10-06 Mitsubishi Materials Silicon Corp シリコンウェーハ
DE19918833C2 (de) * 1999-04-22 2002-10-31 Atotech Deutschland Gmbh Verfahren zum elektrolytischen Abscheiden einer Metallschicht auf Oberflächen eines elektrisch nichtleitenden Substrats und Anwendung des Verfahrens
US20030051656A1 (en) 1999-06-14 2003-03-20 Charles Chiun-Chieh Yang Method for the preparation of an epitaxial silicon wafer with intrinsic gettering
JP4748178B2 (ja) * 1999-07-28 2011-08-17 株式会社Ｓｕｍｃｏ 点欠陥の凝集体が存在しないシリコンウェーハの製造方法
US6635587B1 (en) 1999-09-23 2003-10-21 Memc Electronic Materials, Inc. Method for producing czochralski silicon free of agglomerated self-interstitial defects
US6391662B1 (en) 1999-09-23 2002-05-21 Memc Electronic Materials, Inc. Process for detecting agglomerated intrinsic point defects by metal decoration
JP2003510235A (ja) * 1999-09-23 2003-03-18 エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド 冷却速度を制御することにより単結晶シリコンを成長させるチョクラルスキー法
JP3994602B2 (ja) * 1999-11-12 2007-10-24 信越半導体株式会社 シリコン単結晶ウエーハおよびその製造方法並びにｓｏｉウエーハ
KR100378184B1 (ko) * 1999-11-13 2003-03-29 삼성전자주식회사 제어된 결함 분포를 갖는 실리콘 웨이퍼, 그의 제조공정및 단결정 실리콘 잉곳의 제조를 위한 초크랄스키 풀러
JP3846627B2 (ja) * 2000-04-14 2006-11-15 信越半導体株式会社 シリコンウエーハ、シリコンエピタキシャルウエーハ、アニールウエーハならびにこれらの製造方法
US6599815B1 (en) 2000-06-30 2003-07-29 Memc Electronic Materials, Inc. Method and apparatus for forming a silicon wafer with a denuded zone
US6339016B1 (en) 2000-06-30 2002-01-15 Memc Electronic Materials, Inc. Method and apparatus for forming an epitaxial silicon wafer with a denuded zone
US7105050B2 (en) 2000-11-03 2006-09-12 Memc Electronic Materials, Inc. Method for the production of low defect density silicon
US6858307B2 (en) 2000-11-03 2005-02-22 Memc Electronic Materials, Inc. Method for the production of low defect density silicon
US8529695B2 (en) 2000-11-22 2013-09-10 Sumco Corporation Method for manufacturing a silicon wafer
JP4720058B2 (ja) 2000-11-28 2011-07-13 株式会社Ｓｕｍｃｏ シリコンウェーハの製造方法
US6986925B2 (en) 2001-01-02 2006-01-17 Memc Electronic Materials, Inc. Single crystal silicon having improved gate oxide integrity
US6846539B2 (en) * 2001-01-26 2005-01-25 Memc Electronic Materials, Inc. Low defect density silicon having a vacancy-dominated core substantially free of oxidation induced stacking faults
US6743495B2 (en) 2001-03-30 2004-06-01 Memc Electronic Materials, Inc. Thermal annealing process for producing silicon wafers with improved surface characteristics
KR100745312B1 (ko) * 2001-04-10 2007-08-01 엠이엠씨 일렉트로닉 머티리얼즈 인코포레이티드 고저항율의 초크랄스키 실리콘 내의 열적 도너 형성의 제어
JP2004537161A (ja) * 2001-04-11 2004-12-09 エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド 高抵抗率ｃｚシリコンにおけるサーマルドナー生成の制御
US20020179006A1 (en) * 2001-04-20 2002-12-05 Memc Electronic Materials, Inc. Method for the preparation of a semiconductor substrate with a non-uniform distribution of stabilized oxygen precipitates
JP2004533125A (ja) * 2001-06-22 2004-10-28 エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド イオン注入によるイントリンシックゲッタリングを有するシリコン・オン・インシュレータ構造体を製造する方法
JP4154881B2 (ja) * 2001-10-03 2008-09-24 株式会社Ｓｕｍｃｏ シリコン半導体基板の熱処理方法
US6669775B2 (en) 2001-12-06 2003-12-30 Seh America, Inc. High resistivity silicon wafer produced by a controlled pull rate czochralski method
EP1456875A2 (en) * 2001-12-21 2004-09-15 MEMC Electronic Materials, Inc. Ideal oxygen precipitating silicon wafers with nitrogen/carbon stabilized oxygen precipitate nucleation centers and process for making the same
US6808781B2 (en) 2001-12-21 2004-10-26 Memc Electronic Materials, Inc. Silicon wafers with stabilized oxygen precipitate nucleation centers and process for making the same
US7201800B2 (en) 2001-12-21 2007-04-10 Memc Electronic Materials, Inc. Process for making silicon wafers with stabilized oxygen precipitate nucleation centers
TWI303282B (en) * 2001-12-26 2008-11-21 Sumco Techxiv Corp Method for eliminating defects from single crystal silicon, and single crystal silicon
EP1493179B1 (en) * 2002-04-10 2007-12-12 MEMC Electronic Materials, Inc. Silicon wafer and process for controlling denuded zone depth in an ideal oxygen precipitating silicon wafer
JP2003321297A (ja) * 2002-04-25 2003-11-11 Shin Etsu Handotai Co Ltd シリコン単結晶の製造方法及びシリコン単結晶ウェーハ
JP4092946B2 (ja) * 2002-05-09 2008-05-28 信越半導体株式会社 シリコン単結晶ウエーハ及びエピタキシャルウエーハ並びにシリコン単結晶の製造方法
TWI231357B (en) * 2002-10-18 2005-04-21 Sumitomo Mitsubishi Silicon Method for measuring defect-distribution in silicon monocrystal ingot
KR100764394B1 (ko) * 2002-11-12 2007-10-05 엠이엠씨 일렉트로닉 머티리얼즈, 인크. 도가니 회전을 이용하여 온도 구배를 제어하는 단결정 실리콘의 제조 방법
US6916324B2 (en) * 2003-02-04 2005-07-12 Zimmer Technology, Inc. Provisional orthopedic prosthesis for partially resected bone
KR100588425B1 (ko) * 2003-03-27 2006-06-12 실트로닉 아게 실리콘 단결정, 결정된 결함분포를 가진 실리콘 단결정 및 실리콘 반도체 웨이퍼의 제조방법
US6955718B2 (en) * 2003-07-08 2005-10-18 Memc Electronic Materials, Inc. Process for preparing a stabilized ideal oxygen precipitating silicon wafer
KR100531552B1 (ko) 2003-09-05 2005-11-28 주식회사 하이닉스반도체 실리콘 웨이퍼 및 그 제조방법
KR101045309B1 (ko) * 2004-02-03 2011-06-29 신에쯔 한도타이 가부시키가이샤 반도체 웨이퍼의 제조 방법 및 반도체 잉곳의 절단 위치결정 시스템
US7074271B2 (en) * 2004-02-23 2006-07-11 Sumitomo Mitsubishi Silicon Corporation Method of identifying defect distribution in silicon single crystal ingot
JP2006054350A (ja) 2004-08-12 2006-02-23 Komatsu Electronic Metals Co Ltd 窒素ドープシリコンウェーハとその製造方法
JP4743010B2 (ja) 2005-08-26 2011-08-10 株式会社Ｓｕｍｃｏ シリコンウェーハの表面欠陥評価方法
US7485928B2 (en) * 2005-11-09 2009-02-03 Memc Electronic Materials, Inc. Arsenic and phosphorus doped silicon wafer substrates having intrinsic gettering
US7633307B2 (en) * 2005-12-16 2009-12-15 Freescale Semiconductor, Inc. Method for determining temperature profile in semiconductor manufacturing test
JP4853027B2 (ja) * 2006-01-17 2012-01-11 信越半導体株式会社 シリコン単結晶ウエーハの製造方法
JP2007194232A (ja) * 2006-01-17 2007-08-02 Shin Etsu Handotai Co Ltd シリコン単結晶ウエーハの製造方法
MY157902A (en) * 2006-05-19 2016-08-15 Memc Electronic Materials Controlling agglomerated point defect and oxygen cluster formation induced by the lateral surface of a silicon single crystal during cz growth
JP5239155B2 (ja) 2006-06-20 2013-07-17 信越半導体株式会社 シリコンウエーハの製造方法
CN101191250B (zh) * 2006-11-21 2010-09-08 上海华虹Nec电子有限公司 检测外延单晶正常成长的方法
US8157914B1 (en) 2007-02-07 2012-04-17 Chien-Min Sung Substrate surface modifications for compositional gradation of crystalline materials and associated products
JP5167654B2 (ja) 2007-02-26 2013-03-21 信越半導体株式会社 シリコン単結晶ウエーハの製造方法
US7732353B2 (en) * 2007-04-18 2010-06-08 Ultratech, Inc. Methods of forming a denuded zone in a semiconductor wafer using rapid laser annealing
US7799600B2 (en) * 2007-05-31 2010-09-21 Chien-Min Sung Doped diamond LED devices and associated methods
US20090004426A1 (en) * 2007-06-29 2009-01-01 Memc Electronic Materials, Inc. Suppression of Oxygen Precipitation in Heavily Doped Single Crystal Silicon Substrates
US20090004458A1 (en) * 2007-06-29 2009-01-01 Memc Electronic Materials, Inc. Diffusion Control in Heavily Doped Substrates
JP5311930B2 (ja) * 2007-08-29 2013-10-09 住友化学株式会社 シリコンの製造方法
JP2009212354A (ja) * 2008-03-05 2009-09-17 Sumco Corp シリコン基板の製造方法
JP5276863B2 (ja) * 2008-03-21 2013-08-28 グローバルウェーハズ・ジャパン株式会社 シリコンウェーハ
JP2009231429A (ja) * 2008-03-21 2009-10-08 Covalent Materials Corp シリコンウェーハの製造方法
JP5151628B2 (ja) 2008-04-02 2013-02-27 信越半導体株式会社 シリコン単結晶ウエーハ、シリコン単結晶の製造方法および半導体デバイス
JP2010028065A (ja) * 2008-07-24 2010-02-04 Sumco Corp シリコンウェーハの製造方法
US7939432B2 (en) * 2008-12-15 2011-05-10 Macronix International Co., Ltd. Method of improving intrinsic gettering ability of wafer
US20120001301A1 (en) 2009-04-13 2012-01-05 Shin-Etsu Handotai Co., Ltd. Annealed wafer, method for producing annealed wafer and method for fabricating device
JP2011138955A (ja) * 2009-12-28 2011-07-14 Siltronic Japan Corp シリコンウェハ及びシリコンウェハの製造方法
JP5439305B2 (ja) 2010-07-14 2014-03-12 信越半導体株式会社 シリコン基板の製造方法及びシリコン基板
JP5530856B2 (ja) 2010-08-18 2014-06-25 信越半導体株式会社 ウエーハの熱処理方法及びシリコンウエーハの製造方法並びに熱処理装置
JP5572569B2 (ja) 2011-02-24 2014-08-13 信越半導体株式会社 シリコン基板の製造方法及びシリコン基板
JP5518776B2 (ja) * 2011-03-25 2014-06-11 三菱マテリアル株式会社 シリコンインゴット製造装置、シリコンインゴットの製造方法、シリコンインゴット、シリコンウェハ、太陽電池及びシリコンパーツ
US10141413B2 (en) 2013-03-13 2018-11-27 Taiwan Semiconductor Manufacturing Co., Ltd. Wafer strength by control of uniformity of edge bulk micro defects
US9064823B2 (en) * 2013-03-13 2015-06-23 Taiwan Semiconductor Manufacturing Co., Ltd. Method for qualifying a semiconductor wafer for subsequent processing
US9634098B2 (en) 2013-06-11 2017-04-25 SunEdison Semiconductor Ltd. (UEN201334164H) Oxygen precipitation in heavily doped silicon wafers sliced from ingots grown by the Czochralski method
WO2016019051A1 (en) 2014-07-31 2016-02-04 Sunedison Semiconductor Limited Nitrogen doped and vacancy dominated silicon ingot and thermally treated wafer formed therefrom having radially uniformly distributed oxygen precipitation density and size
JP6044660B2 (ja) 2015-02-19 2016-12-14 信越半導体株式会社 シリコンウェーハの製造方法
JP6786905B2 (ja) * 2016-06-27 2020-11-18 株式会社Sumco シリコン単結晶の製造方法
CN108660513A (zh) * 2017-03-28 2018-10-16 上海新昇半导体科技有限公司 一种减少晶片缺陷的设备及方法
CN109346433B (zh) * 2018-09-26 2020-10-23 上海新傲科技股份有限公司 半导体衬底的键合方法以及键合后的半导体衬底
CN110389108A (zh) * 2019-08-16 2019-10-29 西安奕斯伟硅片技术有限公司 一种单晶硅缺陷区域的检测方法及装置
CN113549997B (zh) * 2021-06-25 2023-01-24 徐州鑫晶半导体科技有限公司 单晶生长的方法、装置及单晶体
CN114280072B (zh) * 2021-12-23 2023-06-20 宁夏中欣晶圆半导体科技有限公司 单晶硅体内bmd的检测方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0812493A (ja) * 1994-06-30 1996-01-16 Sumitomo Sitix Corp シリコン単結晶の製造方法
US5487354A (en) * 1993-12-16 1996-01-30 Wacker-Chemitronic Gesellschaft Fuer Eletronik-Grundstoffe Mbh Method for pulling a silicon single crystal
JPH08330316A (ja) * 1995-05-31 1996-12-13 Sumitomo Sitix Corp シリコン単結晶ウェーハおよびその製造方法

Family Cites Families (96)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US405759A (en) * 1889-06-25 Gearing
DE155531C (ko)
US3997368A (en) * 1975-06-24 1976-12-14 Bell Telephone Laboratories, Incorporated Elimination of stacking faults in silicon devices: a gettering process
JPS583375B2 (ja) * 1979-01-19 1983-01-21 超エル・エス・アイ技術研究組合 シリコン単結晶ウエハ−の製造方法
JPS5680139A (en) 1979-12-05 1981-07-01 Chiyou Lsi Gijutsu Kenkyu Kumiai Manufacture of semiconductor device
US4437922A (en) * 1982-03-26 1984-03-20 International Business Machines Corporation Method for tailoring oxygen precipitate particle density and distribution silicon wafers
JPS59190300A (ja) 1983-04-08 1984-10-29 Hitachi Ltd 半導体製造方法および装置
US4548654A (en) * 1983-06-03 1985-10-22 Motorola, Inc. Surface denuding of silicon wafer
US4505759A (en) 1983-12-19 1985-03-19 Mara William C O Method for making a conductive silicon substrate by heat treatment of oxygenated and lightly doped silicon single crystals
CN1008452B (zh) 1985-04-01 1990-06-20 北京科技大学 制备单晶硅片表面完整层的新途径
JPS62105998A (ja) 1985-10-31 1987-05-16 Sony Corp シリコン基板の製法
US4851358A (en) 1988-02-11 1989-07-25 Dns Electronic Materials, Inc. Semiconductor wafer fabrication with improved control of internal gettering sites using rapid thermal annealing
US4868133A (en) 1988-02-11 1989-09-19 Dns Electronic Materials, Inc. Semiconductor wafer fabrication with improved control of internal gettering sites using RTA
US4981549A (en) 1988-02-23 1991-01-01 Mitsubishi Kinzoku Kabushiki Kaisha Method and apparatus for growing silicon crystals
US5264189A (en) 1988-02-23 1993-11-23 Mitsubishi Materials Corporation Apparatus for growing silicon crystals
JPH01242500A (ja) 1988-03-25 1989-09-27 Mitsubishi Metal Corp シリコン基板の製造方法
JPH0232535A (ja) 1988-07-21 1990-02-02 Kyushu Electron Metal Co Ltd 半導体デバイス用シリコン基板の製造方法
JPH02180789A (ja) 1989-01-05 1990-07-13 Kawasaki Steel Corp Ｓｉ単結晶の製造方法
US5487345A (en) * 1989-03-09 1996-01-30 Unipal International Corporation Parametrically wrapped pallet member and pallet constructed thereof
JPH0633235B2 (ja) 1989-04-05 1994-05-02 新日本製鐵株式会社 酸化膜耐圧特性の優れたシリコン単結晶及びその製造方法
JPH039078A (ja) 1989-06-05 1991-01-16 Komatsu Ltd 斜板式ピストンモータ
JPH0633236B2 (ja) 1989-09-04 1994-05-02 新日本製鐵株式会社 シリコン単結晶の熱処理方法および装置ならびに製造装置
JPH03185831A (ja) 1989-12-15 1991-08-13 Komatsu Denshi Kinzoku Kk 半導体装置の製造方法
JPH0729878B2 (ja) 1990-06-07 1995-04-05 三菱マテリアル株式会社 シリコンウエーハ
JPH04108682A (ja) 1990-08-30 1992-04-09 Fuji Electric Co Ltd 化合物半導体単結晶製造装置および製造方法
IT1242014B (it) 1990-11-15 1994-02-02 Memc Electronic Materials Procedimento per il trattamento di fette di silicio per ottenere in esse profili di precipitazione controllati per la produzione di componenti elettronici.
JP2613498B2 (ja) 1991-03-15 1997-05-28 信越半導体株式会社 Ｓｉ単結晶ウエーハの熱処理方法
JP3016897B2 (ja) 1991-03-20 2000-03-06 信越半導体株式会社 シリコン単結晶の製造方法及び装置
JPH04294540A (ja) 1991-03-25 1992-10-19 Nippon Steel Corp 半導体の製造方法
US5267189A (en) 1991-09-30 1993-11-30 Wilke William G Rational fraction synthesizer
JP2758093B2 (ja) 1991-10-07 1998-05-25 信越半導体株式会社 半導体ウェーハの製造方法
JP2726583B2 (ja) 1991-11-18 1998-03-11 三菱マテリアルシリコン株式会社 半導体基板
JPH05155700A (ja) 1991-12-04 1993-06-22 Nippon Steel Corp 積層欠陥発生核を有するゲッタリングウエハの製造方法および同方法により製造されたシリコンウエハ
US5296047A (en) 1992-01-28 1994-03-22 Hewlett-Packard Co. Epitaxial silicon starting material
JPH0684925A (ja) * 1992-07-17 1994-03-25 Toshiba Corp 半導体基板およびその処理方法
US5403408A (en) * 1992-10-19 1995-04-04 Inland Steel Company Non-uniaxial permanent magnet material
WO1994016124A1 (fr) 1993-01-06 1994-07-21 Nippon Steel Corporation Procede et appareil pour prevoir la qualite du cristal d'un semi-conducteur monocristallin
KR0139730B1 (ko) * 1993-02-23 1998-06-01 사또오 후미오 반도체 기판 및 그 제조방법
US5401669A (en) * 1993-05-13 1995-03-28 Memc Electronic Materials, Spa Process for the preparation of silicon wafers having controlled distribution of oxygen precipitate nucleation centers
JPH0786289A (ja) 1993-07-22 1995-03-31 Toshiba Corp 半導体シリコンウェハおよびその製造方法
JPH0741383A (ja) 1993-07-29 1995-02-10 Nippon Steel Corp 半導体単結晶およびその製造方法
JPH07158458A (ja) 1993-12-10 1995-06-20 Mitsubishi Motors Corp 多気筒内燃エンジンの吸気制御装置
DE4414947C2 (de) 1993-12-16 1998-12-17 Wacker Siltronic Halbleitermat Verfahren zum Ziehen eines Einkristalls aus Silicium
JP2725586B2 (ja) 1993-12-30 1998-03-11 日本電気株式会社 シリコン基板の製造方法
JP3276500B2 (ja) 1994-01-14 2002-04-22 ワッカー・エヌエスシーイー株式会社 シリコンウェーハとその製造方法
US5445975A (en) 1994-03-07 1995-08-29 Advanced Micro Devices, Inc. Semiconductor wafer with enhanced pre-process denudation and process-induced gettering
JP2895743B2 (ja) * 1994-03-25 1999-05-24 信越半導体株式会社 Ｓｏｉ基板の製造方法
US5548654A (en) 1994-04-07 1996-08-20 Fast; Lawrence R. Infrared audio transmitter system
US5474020A (en) 1994-05-06 1995-12-12 Texas Instruments Incorporated Oxygen precipitation control in czochralski-grown silicon cyrstals
JPH07321120A (ja) 1994-05-25 1995-12-08 Komatsu Electron Metals Co Ltd シリコンウェーハの熱処理方法
JP3458342B2 (ja) 1994-06-03 2003-10-20 コマツ電子金属株式会社 シリコンウェーハの製造方法およびシリコンウェーハ
JP2874834B2 (ja) * 1994-07-29 1999-03-24 三菱マテリアル株式会社 シリコンウェーハのイントリンシックゲッタリング処理法
JPH0845944A (ja) 1994-07-29 1996-02-16 Sumitomo Sitix Corp シリコンウェーハの製造方法
JPH0845947A (ja) 1994-08-03 1996-02-16 Nippon Steel Corp シリコン基板の熱処理方法
JP3285111B2 (ja) 1994-12-05 2002-05-27 信越半導体株式会社 結晶欠陥の少ないシリコン単結晶の製造方法
JPH08208374A (ja) 1995-01-25 1996-08-13 Nippon Steel Corp シリコン単結晶およびその製造方法
JPH08203913A (ja) * 1995-01-27 1996-08-09 Toshiba Corp 半導体ウェーハの熱処理方法
US5611855A (en) * 1995-01-31 1997-03-18 Seh America, Inc. Method for manufacturing a calibration wafer having a microdefect-free layer of a precisely predetermined depth
US5788763A (en) * 1995-03-09 1998-08-04 Toshiba Ceramics Co., Ltd. Manufacturing method of a silicon wafer having a controlled BMD concentration
US5593494A (en) * 1995-03-14 1997-01-14 Memc Electronic Materials, Inc. Precision controlled precipitation of oxygen in silicon
JP2826589B2 (ja) 1995-03-30 1998-11-18 住友シチックス株式会社 単結晶シリコン育成方法
JPH08337490A (ja) 1995-06-09 1996-12-24 Shin Etsu Handotai Co Ltd 結晶欠陥の少ないシリコン単結晶及びその製造方法
JP3006669B2 (ja) 1995-06-20 2000-02-07 信越半導体株式会社 結晶欠陥の均一なシリコン単結晶の製造方法およびその製造装置
JP3381816B2 (ja) 1996-01-17 2003-03-04 三菱住友シリコン株式会社 半導体基板の製造方法
JP4020987B2 (ja) 1996-01-19 2007-12-12 信越半導体株式会社 ウエーハ周辺部に結晶欠陥がないシリコン単結晶およびその製造方法
JP4189041B2 (ja) * 1996-02-15 2008-12-03 東芝マイクロエレクトロニクス株式会社 半導体基板の製造方法およびその検査方法
DE19613282A1 (de) 1996-04-03 1997-10-09 Leybold Ag Vorrichtung zum Ziehen von Einkristallen
US5779791A (en) * 1996-08-08 1998-07-14 Memc Electronic Materials, Inc. Process for controlling thermal history of Czochralski-grown silicon
DE19637182A1 (de) 1996-09-12 1998-03-19 Wacker Siltronic Halbleitermat Verfahren zur Herstellung von Halbleiterscheiben aus Silicium mit geringer Defektdichte
JPH10152395A (ja) 1996-11-21 1998-06-09 Komatsu Electron Metals Co Ltd シリコン単結晶の製造方法
KR100240023B1 (ko) 1996-11-29 2000-01-15 윤종용 반도체 웨이퍼 열처리방법 및 이에 따라 형성된 반도체 웨이퍼
KR100319413B1 (ko) 1996-12-03 2002-01-05 고지마 마타오 반도체 실리콘 에피택셜 웨이퍼 및 반도체 디바이스의 제조 방법
US6503594B2 (en) * 1997-02-13 2003-01-07 Samsung Electronics Co., Ltd. Silicon wafers having controlled distribution of defects and slip
US6045610A (en) 1997-02-13 2000-04-04 Samsung Electronics Co., Ltd. Methods of manufacturing monocrystalline silicon ingots and wafers by controlling pull rate profiles in a hot zone furnance
SG64470A1 (en) * 1997-02-13 1999-04-27 Samsung Electronics Co Ltd Methods of manufacturing monocrystalline silicon ingots and wafers by controlling pull rate profiles in a hot zone furnace and ingots and wafers manufactured thereby
US6485807B1 (en) * 1997-02-13 2002-11-26 Samsung Electronics Co., Ltd. Silicon wafers having controlled distribution of defects, and methods of preparing the same
US5994761A (en) 1997-02-26 1999-11-30 Memc Electronic Materials Spa Ideal oxygen precipitating silicon wafers and oxygen out-diffusion-less process therefor
DE19711922A1 (de) 1997-03-21 1998-09-24 Wacker Siltronic Halbleitermat Vorrichtung und Verfahren zum Ziehen eines Einkristalls
US6379642B1 (en) 1997-04-09 2002-04-30 Memc Electronic Materials, Inc. Vacancy dominated, defect-free silicon
DE69841714D1 (de) 1997-04-09 2010-07-22 Memc Electronic Materials Silicium mit niedriger Fehlerdichte und idealem Sauerstoffniederschlag
CN1280455C (zh) 1997-04-09 2006-10-18 Memc电子材料有限公司 低缺陷浓度的硅
US5925320A (en) * 1997-06-04 1999-07-20 Jones; John P. Air purification system
JPH1179889A (ja) 1997-07-09 1999-03-23 Shin Etsu Handotai Co Ltd 結晶欠陥が少ないシリコン単結晶の製造方法、製造装置並びにこの方法、装置で製造されたシリコン単結晶とシリコンウエーハ
JP3144631B2 (ja) 1997-08-08 2001-03-12 住友金属工業株式会社 シリコン半導体基板の熱処理方法
TW429478B (en) 1997-08-29 2001-04-11 Toshiba Corp Semiconductor device and method for manufacturing the same
US6340392B1 (en) * 1997-10-24 2002-01-22 Samsung Electronics Co., Ltd. Pulling methods for manufacturing monocrystalline silicone ingots by controlling temperature at the center and edge of an ingot-melt interface
JPH11150119A (ja) 1997-11-14 1999-06-02 Sumitomo Sitix Corp シリコン半導体基板の熱処理方法とその装置
JP3596257B2 (ja) 1997-11-19 2004-12-02 三菱住友シリコン株式会社 シリコン単結晶ウェーハの製造方法
JP3634133B2 (ja) 1997-12-17 2005-03-30 信越半導体株式会社 結晶欠陥の少ないシリコン単結晶の製造方法及びシリコン単結晶ウエーハ
JP4147599B2 (ja) 1997-12-26 2008-09-10 株式会社Ｓｕｍｃｏ シリコン単結晶及びその製造方法
JP3627498B2 (ja) 1998-01-19 2005-03-09 信越半導体株式会社 シリコン単結晶の製造方法
JP3955375B2 (ja) 1998-01-19 2007-08-08 信越半導体株式会社 シリコン単結晶の製造方法およびシリコン単結晶ウエーハ
JPH11349393A (ja) 1998-06-03 1999-12-21 Shin Etsu Handotai Co Ltd シリコン単結晶ウエーハおよびシリコン単結晶ウエーハの製造方法
US6077343A (en) 1998-06-04 2000-06-20 Shin-Etsu Handotai Co., Ltd. Silicon single crystal wafer having few defects wherein nitrogen is doped and a method for producing it
JPH11354525A (ja) 1998-06-11 1999-12-24 Shin Etsu Handotai Co Ltd シリコンエピタキシャルウェーハの製造方法
US6689209B2 (en) * 2000-11-03 2004-02-10 Memc Electronic Materials, Inc. Process for preparing low defect density silicon using high growth rates

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5487354A (en) * 1993-12-16 1996-01-30 Wacker-Chemitronic Gesellschaft Fuer Eletronik-Grundstoffe Mbh Method for pulling a silicon single crystal
JPH0812493A (ja) * 1994-06-30 1996-01-16 Sumitomo Sitix Corp シリコン単結晶の製造方法
JPH08330316A (ja) * 1995-05-31 1996-12-13 Sumitomo Sitix Corp シリコン単結晶ウェーハおよびその製造方法

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