SG10202110256YA - Multiple plate line architecture for multideck memory array - Google Patents
Multiple plate line architecture for multideck memory arrayInfo
- Publication number
- SG10202110256YA SG10202110256YA SG10202110256YA SG10202110256YA SG 10202110256Y A SG10202110256Y A SG 10202110256YA SG 10202110256Y A SG10202110256Y A SG 10202110256YA SG 10202110256Y A SG10202110256Y A SG 10202110256YA
- Authority
- SG
- Singapore
- Prior art keywords
- memory array
- plate line
- multiple plate
- line architecture
- multideck memory
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
- G11C11/221—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements using ferroelectric capacitors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
- G11C11/225—Auxiliary circuits
- G11C11/2253—Address circuits or decoders
- G11C11/2257—Word-line or row circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
- G11C11/225—Auxiliary circuits
- G11C11/2259—Cell access
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/02—Disposition of storage elements, e.g. in the form of a matrix array
- G11C5/025—Geometric lay-out considerations of storage- and peripheral-blocks in a semiconductor storage device
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/06—Arrangements for interconnecting storage elements electrically, e.g. by wiring
- G11C5/063—Voltage and signal distribution in integrated semi-conductor memory access lines, e.g. word-line, bit-line, cross-over resistance, propagation delay
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/06—Arrangements for interconnecting storage elements electrically, e.g. by wiring
- G11C5/066—Means for reducing external access-lines for a semiconductor memory clip, e.g. by multiplexing at least address and data signals
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
- H10B53/20—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the three-dimensional arrangements, e.g. with cells on different height levels
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
- G11C11/225—Auxiliary circuits
- G11C11/2253—Address circuits or decoders
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
- G11C11/225—Auxiliary circuits
- G11C11/2273—Reading or sensing circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
- G11C11/225—Auxiliary circuits
- G11C11/2275—Writing or programming circuits or methods
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
- H10B53/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the memory core region
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Memories (AREA)
- Physics & Mathematics (AREA)
- Dram (AREA)
- Storage Device Security (AREA)
- Geometry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US15/469,865 US10262715B2 (en) | 2017-03-27 | 2017-03-27 | Multiple plate line architecture for multideck memory array |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG10202110256YA true SG10202110256YA (en) | 2021-10-28 |
Family
ID=63583482
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG11201908050T SG11201908050TA (en) | 2017-03-27 | 2018-03-09 | Multiple plate line architecture for multideck memory array |
| SG10202110256Y SG10202110256YA (en) | 2017-03-27 | 2018-03-09 | Multiple plate line architecture for multideck memory array |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG11201908050T SG11201908050TA (en) | 2017-03-27 | 2018-03-09 | Multiple plate line architecture for multideck memory array |
Country Status (8)
| Country | Link |
|---|---|
| US (4) | US10262715B2 (en) |
| EP (1) | EP3602558A4 (en) |
| JP (2) | JP7222903B2 (en) |
| KR (3) | KR20220054726A (en) |
| CN (1) | CN110462740B (en) |
| SG (2) | SG11201908050TA (en) |
| TW (1) | TWI671742B (en) |
| WO (1) | WO2018182951A1 (en) |
Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11088204B2 (en) * | 2017-09-30 | 2021-08-10 | Intel Corporation | Three terminal selectors for memory applications and their methods of fabrication |
| US11417829B2 (en) * | 2018-05-18 | 2022-08-16 | Integrated Silicon Solution, (Cayman) Inc. | Three dimensional perpendicular magnetic tunnel junction with thin film transistor array |
| US10559337B1 (en) * | 2018-11-30 | 2020-02-11 | Micron Technology, Inc. | Vertical decoder |
| US11182158B2 (en) * | 2019-05-22 | 2021-11-23 | Intel Corporation | Technologies for providing adaptive memory media management |
| DE102020100777A1 (en) * | 2019-08-30 | 2021-03-04 | Taiwan Semiconductor Manufacturing Co., Ltd. | Analog non-volatile memory device using a polyferroelectric film with random polarization directions |
| KR20210048637A (en) | 2019-10-23 | 2021-05-04 | 삼성전자주식회사 | Variable resistance memory device |
| US11088170B2 (en) | 2019-11-25 | 2021-08-10 | Sandisk Technologies Llc | Three-dimensional ferroelectric memory array including integrated gate selectors and methods of forming the same |
| US11908505B2 (en) | 2020-01-24 | 2024-02-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | Ferroelectric FET-based content addressable memory |
| TWI763266B (en) * | 2020-01-24 | 2022-05-01 | 台灣積體電路製造股份有限公司 | Memory device, data processing device, and data processing method |
| US11232838B2 (en) | 2020-01-24 | 2022-01-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Ferroelectric FET-based content addressable memory |
| US11963370B2 (en) * | 2020-03-03 | 2024-04-16 | Micron Technology, Inc. | Architecture for multideck memory arrays |
| US11829376B2 (en) * | 2020-05-06 | 2023-11-28 | Intel Corporation | Technologies for refining stochastic similarity search candidates |
| US11437435B2 (en) * | 2020-08-03 | 2022-09-06 | Micron Technology, Inc. | On-pitch vias for semiconductor devices and associated devices and systems |
| CN116670764A (en) * | 2021-02-20 | 2023-08-29 | 华为技术有限公司 | Memory and electronic equipment |
| US11475947B1 (en) | 2021-04-15 | 2022-10-18 | Micron Technology, Inc. | Decoding architecture for memory tiles |
| US11393822B1 (en) | 2021-05-21 | 2022-07-19 | Micron Technology, Inc. | Thin film transistor deck selection in a memory device |
| CN113903374A (en) * | 2021-09-30 | 2022-01-07 | 武汉新芯集成电路制造有限公司 | Memory device and preparation method thereof |
| CN113921056A (en) * | 2021-09-30 | 2022-01-11 | 武汉新芯集成电路制造有限公司 | Memory device and preparation method thereof |
| US11937435B2 (en) | 2021-10-28 | 2024-03-19 | International Business Machines Corporation | High density two-tier MRAM structure |
| CN116741227B (en) * | 2023-08-09 | 2023-11-17 | 浙江力积存储科技有限公司 | Three-dimensional memory architecture, operation method thereof and memory |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5373463A (en) * | 1993-07-06 | 1994-12-13 | Motorola Inc. | Ferroelectric nonvolatile random access memory having drive line segments |
| US5905672A (en) * | 1997-03-27 | 1999-05-18 | Micron Technology, Inc. | Ferroelectric memory using ferroelectric reference cells |
| US5917746A (en) * | 1997-08-27 | 1999-06-29 | Micron Technology, Inc. | Cell plate structure for a ferroelectric memory |
| KR100324594B1 (en) * | 1999-06-28 | 2002-02-16 | 박종섭 | FeRAM Device |
| JP2003123467A (en) * | 2001-10-17 | 2003-04-25 | Sony Corp | Ferroelectric type nonvolatile semiconductor memory array and driving method therefor |
| JP2003142661A (en) * | 2001-11-05 | 2003-05-16 | Sony Corp | Ferroelectric material nonvolatile semiconductor storage device |
| JP3918515B2 (en) * | 2001-11-05 | 2007-05-23 | ソニー株式会社 | Ferroelectric nonvolatile semiconductor memory |
| US6807086B2 (en) | 2001-11-30 | 2004-10-19 | Kabushiki Kaisha Toshiba | Magnetic random access memory |
| US6667896B2 (en) * | 2002-05-24 | 2003-12-23 | Agilent Technologies, Inc. | Grouped plate line drive architecture and method |
| US6754124B2 (en) | 2002-06-11 | 2004-06-22 | Micron Technology, Inc. | Hybrid MRAM array structure and operation |
| US6700811B1 (en) * | 2002-09-04 | 2004-03-02 | Macronix International Co., Ltd. | Random access memory device and method for driving a plate line segment therein |
| US6894916B2 (en) * | 2002-09-27 | 2005-05-17 | International Business Machines Corporation | Memory array employing single three-terminal non-volatile storage elements |
| JP2004288282A (en) * | 2003-03-20 | 2004-10-14 | Fujitsu Ltd | Semiconductor device |
| US7291878B2 (en) | 2003-06-03 | 2007-11-06 | Hitachi Global Storage Technologies Netherlands B.V. | Ultra low-cost solid-state memory |
| JP4074279B2 (en) * | 2003-09-22 | 2008-04-09 | 株式会社東芝 | Semiconductor integrated circuit device, digital camera, digital video camera, computer system, portable computer system, logic variable LSI device, IC card, navigation system, robot, image display device, optical disk storage device |
| JP2007013011A (en) * | 2005-07-01 | 2007-01-18 | Seiko Epson Corp | Ferroelectric memory device and driving ic (integrated circuit) for indication |
| CN101636840B (en) * | 2006-11-17 | 2011-05-25 | 松下电器产业株式会社 | Nonvolatile memory element, nonvolatile memory device, nonvolatile semiconductor device, and method for manufacturing nonvolatile memory element |
| KR100881292B1 (en) | 2007-01-23 | 2009-02-04 | 삼성전자주식회사 | Resistive semiconductor memory device having three dimension stack structure and method for controlling the same |
| US7920404B2 (en) * | 2007-12-31 | 2011-04-05 | Texas Instruments Incorporated | Ferroelectric memory devices with partitioned platelines |
| JP2009283681A (en) | 2008-05-22 | 2009-12-03 | Toshiba Corp | Nonvolatile storage and manufacturing method thereof |
| US7848131B2 (en) * | 2008-10-19 | 2010-12-07 | Juhan Kim | High speed ferroelectric random access memory |
| US8144506B2 (en) * | 2009-06-23 | 2012-03-27 | Micron Technology, Inc. | Cross-point memory devices, electronic systems including cross-point memory devices and methods of accessing a plurality of memory cells in a cross-point memory array |
| US8320181B2 (en) * | 2009-08-25 | 2012-11-27 | Micron Technology, Inc. | 3D memory devices decoding and routing systems and methods |
| WO2011155210A1 (en) * | 2010-06-10 | 2011-12-15 | パナソニック株式会社 | Non-volatile memory element and non-volatile memory device equipped with same |
| KR101710658B1 (en) * | 2010-06-18 | 2017-02-27 | 삼성전자 주식회사 | Three dimensional stacked structure semiconductor device having through silicon via and method for signaling thereof |
| JP2012069199A (en) * | 2010-09-22 | 2012-04-05 | Toshiba Corp | Semiconductor memory |
| WO2012121265A1 (en) * | 2011-03-10 | 2012-09-13 | Semiconductor Energy Laboratory Co., Ltd. | Memory device and method for manufacturing the same |
| US20120307545A1 (en) * | 2011-06-01 | 2012-12-06 | Texas Instruments Incorporated | Interleaved Bit Line Architecture for 2T2C Ferroelectric Memories |
| US8964474B2 (en) | 2012-06-15 | 2015-02-24 | Micron Technology, Inc. | Architecture for 3-D NAND memory |
| US9281044B2 (en) * | 2013-05-17 | 2016-03-08 | Micron Technology, Inc. | Apparatuses having a ferroelectric field-effect transistor memory array and related method |
| US20150063039A1 (en) * | 2013-08-29 | 2015-03-05 | Taiwan Semiconductor Manufacturing Company Ltd. | Redundancy in stacked memory structure |
| KR102151176B1 (en) * | 2014-08-22 | 2020-09-02 | 삼성전자 주식회사 | Resistive Memory Device and Operating Method thereof |
-
2017
- 2017-03-27 US US15/469,865 patent/US10262715B2/en active Active
-
2018
- 2018-03-09 KR KR1020227013793A patent/KR20220054726A/en not_active Application Discontinuation
- 2018-03-09 JP JP2019552580A patent/JP7222903B2/en active Active
- 2018-03-09 SG SG11201908050T patent/SG11201908050TA/en unknown
- 2018-03-09 KR KR1020197028505A patent/KR102262372B1/en active IP Right Grant
- 2018-03-09 EP EP18776859.3A patent/EP3602558A4/en active Pending
- 2018-03-09 KR KR1020217016733A patent/KR102392613B1/en active IP Right Grant
- 2018-03-09 SG SG10202110256Y patent/SG10202110256YA/en unknown
- 2018-03-09 CN CN201880021868.6A patent/CN110462740B/en active Active
- 2018-03-09 WO PCT/US2018/021807 patent/WO2018182951A1/en unknown
- 2018-03-20 TW TW107109405A patent/TWI671742B/en active
- 2018-07-20 US US16/041,455 patent/US10304513B2/en active Active
-
2019
- 2019-04-17 US US16/387,208 patent/US10734057B2/en active Active
-
2020
- 2020-06-23 US US16/909,863 patent/US11227648B2/en active Active
-
2021
- 2021-12-01 JP JP2021195035A patent/JP2022027811A/en active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| JP2022027811A (en) | 2022-02-14 |
| TW201903765A (en) | 2019-01-16 |
| US20200388315A1 (en) | 2020-12-10 |
| SG11201908050TA (en) | 2019-10-30 |
| US20180277181A1 (en) | 2018-09-27 |
| EP3602558A1 (en) | 2020-02-05 |
| KR102392613B1 (en) | 2022-04-29 |
| US11227648B2 (en) | 2022-01-18 |
| WO2018182951A1 (en) | 2018-10-04 |
| JP7222903B2 (en) | 2023-02-15 |
| KR20190114020A (en) | 2019-10-08 |
| KR20210068612A (en) | 2021-06-09 |
| US20180330771A1 (en) | 2018-11-15 |
| EP3602558A4 (en) | 2020-12-23 |
| JP2020517092A (en) | 2020-06-11 |
| US10734057B2 (en) | 2020-08-04 |
| TWI671742B (en) | 2019-09-11 |
| CN110462740B (en) | 2023-07-18 |
| US10304513B2 (en) | 2019-05-28 |
| KR20220054726A (en) | 2022-05-03 |
| US10262715B2 (en) | 2019-04-16 |
| US20190244652A1 (en) | 2019-08-08 |
| KR102262372B1 (en) | 2021-06-09 |
| CN110462740A (en) | 2019-11-15 |
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