SG10201804422VA - Photomask Blank and Making Method - Google Patents

Photomask Blank and Making Method

Info

Publication number
SG10201804422VA
SG10201804422VA SG10201804422VA SG10201804422VA SG10201804422VA SG 10201804422V A SG10201804422V A SG 10201804422VA SG 10201804422V A SG10201804422V A SG 10201804422VA SG 10201804422V A SG10201804422V A SG 10201804422VA SG 10201804422V A SG10201804422V A SG 10201804422VA
Authority
SG
Singapore
Prior art keywords
photomask blank
making method
film
photomask
exposure light
Prior art date
Application number
SG10201804422VA
Other languages
English (en)
Inventor
Takuro Kosaka
Tsuneo Terasawa
Shigeo Irie
Takahiro Kishita
Original Assignee
Shinetsu Chemical Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shinetsu Chemical Co filed Critical Shinetsu Chemical Co
Publication of SG10201804422VA publication Critical patent/SG10201804422VA/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/66—Containers specially adapted for masks, mask blanks or pellicles; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/72—Repair or correction of mask defects
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
    • G03F1/84—Inspecting
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G03F7/2053—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a laser
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70241—Optical aspects of refractive lens systems, i.e. comprising only refractive elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/7065—Defects, e.g. optical inspection of patterned layer for defects

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
SG10201804422VA 2017-06-13 2018-05-24 Photomask Blank and Making Method SG10201804422VA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2017115879A JP6791031B2 (ja) 2017-06-13 2017-06-13 フォトマスクブランク及びその製造方法

Publications (1)

Publication Number Publication Date
SG10201804422VA true SG10201804422VA (en) 2019-01-30

Family

ID=62492498

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10201804422VA SG10201804422VA (en) 2017-06-13 2018-05-24 Photomask Blank and Making Method

Country Status (7)

Country Link
US (1) US11061319B2 (ko)
EP (1) EP3415987B1 (ko)
JP (1) JP6791031B2 (ko)
KR (1) KR102296523B1 (ko)
CN (1) CN109085737A (ko)
SG (1) SG10201804422VA (ko)
TW (1) TWI742288B (ko)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6753375B2 (ja) * 2017-07-28 2020-09-09 信越化学工業株式会社 フォトマスクブランク、フォトマスクブランクの製造方法及びフォトマスクの製造方法
WO2020138855A1 (ko) * 2018-12-26 2020-07-02 주식회사 에스앤에스텍 블랭크 마스크 및 포토마스크
JP7313166B2 (ja) * 2019-03-18 2023-07-24 Hoya株式会社 マスクブランク、転写用マスクの製造方法、及び半導体デバイスの製造方法
US11553624B1 (en) * 2021-06-23 2023-01-10 Lenovo (United States) Inc. Integrated thermal interface detachment mechanism for inaccessible interfaces
KR102660636B1 (ko) * 2021-12-31 2024-04-25 에스케이엔펄스 주식회사 블랭크 마스크 및 이를 이용한 포토마스크

Family Cites Families (22)

* Cited by examiner, † Cited by third party
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JPS6385553A (ja) * 1986-09-30 1988-04-16 Toshiba Corp マスク基板およびマスクパタ−ンの形成方法
JPH0749558A (ja) 1993-08-05 1995-02-21 Sony Corp 位相シフトマスクの作製方法
US20050170665A1 (en) * 2003-04-17 2005-08-04 Fujitsu Limited Method of forming a high dielectric film
US7264908B2 (en) * 2003-05-16 2007-09-04 Shin-Etsu Chemical Co., Ltd. Photo mask blank and photo mask
US7365014B2 (en) * 2004-01-30 2008-04-29 Applied Materials, Inc. Reticle fabrication using a removable hard mask
DE602006021102D1 (de) * 2005-07-21 2011-05-19 Shinetsu Chemical Co Photomaskenrohling, Photomaske und deren Herstellungsverfahren
JP4883278B2 (ja) * 2006-03-10 2012-02-22 信越化学工業株式会社 フォトマスクブランク及びフォトマスクの製造方法
US8198118B2 (en) * 2006-10-31 2012-06-12 Taiwan Semiconductor Manufacturing Co. Method for forming a robust mask with reduced light scattering
JP4989800B2 (ja) * 2008-09-27 2012-08-01 Ｈｏｙａ株式会社 マスクブランク及び転写用マスクの製造方法
JP2011211083A (ja) * 2010-03-30 2011-10-20 Hoya Corp マスクブランクス、パターン形成方法及びモールドの製造方法
JP5736615B2 (ja) * 2011-04-26 2015-06-17 国立大学法人大阪大学 基板の洗浄方法
US9625806B2 (en) * 2013-01-15 2017-04-18 Hoya Corporation Mask blank, phase-shift mask, and method for manufacturing the same
JP5686216B1 (ja) * 2013-08-20 2015-03-18 大日本印刷株式会社 マスクブランクス、位相シフトマスク及びその製造方法
JP6258151B2 (ja) * 2013-09-25 2018-01-10 信越化学工業株式会社 フォトマスクブランクおよびその製造方法
KR102261621B1 (ko) * 2014-12-26 2021-06-04 호야 가부시키가이샤 마스크 블랭크, 위상 시프트 마스크, 위상 시프트 마스크의 제조 방법 및 반도체 디바이스의 제조 방법
WO2016140044A1 (ja) * 2015-03-04 2016-09-09 信越化学工業株式会社 フォトマスクブランク、フォトマスクの製造方法及びマスクパターン形成方法
JP6601245B2 (ja) 2015-03-04 2019-11-06 信越化学工業株式会社 フォトマスクブランク、フォトマスクの製造方法及びマスクパターン形成方法
JP6380204B2 (ja) * 2015-03-31 2018-08-29 信越化学工業株式会社 ハーフトーン位相シフトマスクブランク、ハーフトーン位相シフトマスク及びパターン露光方法
JP6087401B2 (ja) * 2015-08-14 2017-03-01 Hoya株式会社 マスクブランク、位相シフトマスクおよび半導体デバイスの製造方法
JP6394544B2 (ja) * 2015-09-04 2018-09-26 信越化学工業株式会社 フォトマスクブランクの欠陥検査方法、選別方法及び製造方法
US10816891B2 (en) * 2016-12-14 2020-10-27 Taiwan Semiconductor Manufacturing Company, Ltd. Photomask and fabrication method therefor
JP6900872B2 (ja) * 2016-12-26 2021-07-07 信越化学工業株式会社 フォトマスクブランク及びその製造方法

Also Published As

Publication number Publication date
JP2019002973A (ja) 2019-01-10
KR20180135806A (ko) 2018-12-21
KR102296523B1 (ko) 2021-09-02
EP3415987B1 (en) 2021-09-29
CN109085737A (zh) 2018-12-25
US20180356721A1 (en) 2018-12-13
TWI742288B (zh) 2021-10-11
US11061319B2 (en) 2021-07-13
TW201921092A (zh) 2019-06-01
EP3415987A1 (en) 2018-12-19
JP6791031B2 (ja) 2020-11-25

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