TWI707378B - Method of implanting processing species into workpiece and implanting dopant into workpiece, and apparatus for processing workpiece - Google Patents

Method of implanting processing species into workpiece and implanting dopant into workpiece, and apparatus for processing workpiece Download PDF

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TWI707378B
TWI707378B TW105110985A TW105110985A TWI707378B TW I707378 B TWI707378 B TW I707378B TW 105110985 A TW105110985 A TW 105110985A TW 105110985 A TW105110985 A TW 105110985A TW I707378 B TWI707378 B TW I707378B
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workpiece
source gas
neon
chamber
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TW201737288A (en
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本雄 具
維克拉姆 M. 博斯爾
約翰 A. 弗龍梯柔
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美商瓦里安半導體設備公司
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Abstract

An apparatus and methods of improving the ion beam quality of a halogen-based source gas are disclosed. Unexpectedly, the introduction of a noble gas, such as argon or neon, to an ion source chamber may increase the percentage of desirable ion species, while decreasing the amount of contaminants and halogen-containing ions. This is especially beneficial in non-mass analyzed implanters, where all ions are implanted into the workpiece. In one embodiment, a first source gas, comprising a processing species and a halogen is introduced into a ion source chamber, a second source gas comprising a hydride, and a third source gas comprising a noble gas are also introduced. The combination of these three source gases produces an ion beam having a higher percentage of pure processing species ions than would occur if the third source gas were not used.

Description

將加工物質植入工件中與將摻雜劑植入工件中的方法及用於加工工件的設備 Method for implanting processing substance into workpiece and implanting dopant into workpiece and equipment for processing workpiece

本發明實施例涉及一種用於在離子植入系統中提高離子束品質的設備及各種方法，且更具體而言，涉及使用共同氣體來提高硼離子束的品質。 The embodiments of the present invention relate to an apparatus and various methods for improving the quality of an ion beam in an ion implantation system, and more specifically, to using a common gas to improve the quality of a boron ion beam.

半導體工件常常被植入有摻雜劑的物質以產生所需的傳導性。舉例而言，太陽電池可被植入有摻雜劑的物質以產生發射區。此植入可使用各種不同的機構來進行。在一個實施例中，使用離子源來進行。 Semiconductor workpieces are often implanted with dopant substances to produce the required conductivity. For example, solar cells can be implanted with dopant substances to create emission regions. This implantation can be performed using a variety of different mechanisms. In one embodiment, it is done using an ion source.

為提高過程效率及降低成本，在某些實施例中，使自離子源提取的離子直接朝工件加速，而未進行任何質量分析(mass analysis)。換言之，使在離子源中產生的離子加速並將其直接植入 工件中。使用質量分析器以自離子束移除不需要的物質。質量分析器進行的移除暗指自離子源提取的所有離子均將被植入工件中。因此，也可能在離子源內產生的不需要的離子，所述不需要的離子隨後被植入工件中。 In order to improve the process efficiency and reduce the cost, in some embodiments, the ions extracted from the ion source are directly accelerated toward the workpiece without any mass analysis. In other words, accelerate the ions generated in the ion source and implant them directly In the artifact. Use a mass analyzer to remove unwanted materials from the ion beam. The removal by the mass analyzer implies that all ions extracted from the ion source will be implanted in the workpiece. Therefore, it is also possible to generate unwanted ions in the ion source, which are then implanted into the workpiece.

此種現象在來源氣體為例如氟化物等鹵素系化合物時可能最為明顯。氟離子及中性物(介穩態的或受激發的)可與離子源的內表面發生反應，從而釋放例如矽、氧、碳及鋁等不想要的離子以及作為雜質元素而存在的重金屬。此外，也可將鹵素離子植入工件中。 This phenomenon may be most obvious when the source gas is a halogen-based compound such as fluoride. Fluoride ions and neutrals (meta-stable or excited) can react with the inner surface of the ion source to release unwanted ions such as silicon, oxygen, carbon, and aluminum, as well as heavy metals that exist as impurity elements. In addition, halogen ions can also be implanted into the workpiece.

因此，提高射束品質的設備及方法(尤其對於其中採用鹵素系源氣體的實施例而言)將為有益的。 Therefore, equipment and methods for improving beam quality (especially for embodiments in which halogen-based source gases are used) will be beneficial.

本發明揭露一種提高鹵素系源氣體的離子束品質的設備及各種方法。出乎意料地，將例如氬或氖等惰性氣體引入至離子源腔室可增加所期望的離子物質的百分比，同時減少污染物及含鹵素的離子的量。此在未經質量分析的離子植入機中尤其有益，於所述離子植入機中所有離子被植入至工件內。在一實施例中，將包含加工物質及鹵素的第一來源氣體引入至離子源腔室中，還引入包含氫化物的第二來源氣體及包含惰性氣體的第三來源氣體。這三種來源氣體的組合與在不使用第三來源氣體時所將發生的相比，可產生具有更高百分比的純加工物質離子的離子束。 The present invention discloses a device and various methods for improving the ion beam quality of halogen-based source gas. Unexpectedly, the introduction of an inert gas such as argon or neon into the ion source chamber can increase the percentage of desired ion species while reducing the amount of pollutants and halogen-containing ions. This is particularly beneficial in ion implanters that have not been mass-analyzed, since all ions in the ion implanter are implanted into the workpiece. In one embodiment, the first source gas containing the processing substance and halogen is introduced into the ion source chamber, and the second source gas containing hydride and the third source gas containing inert gas are also introduced. The combination of these three source gases can produce an ion beam with a higher percentage of pure processed material ions than would occur if the third source gas is not used.

在一實施例中揭露一種將加工物質植入工件中的方法，所述方法包括：在腔室中對包含加工物質及氟的第一來源氣體以及氖提供能量，以在腔室中形成等離子體；以及自等離子體提取離子並將所述離子引向工件，其中與不使用氖時的基線相比，自等離子體提取的純加工物質離子的量占所有含加工物質的離子的百分比增加了至少5%。在某些實施例中，與基線相比，自等離子體提取的純加工物質離子的量占所有含加工物質的離子的百分比增加了至少10%。在某些實施例中，與基線相比，自等離子體提取的加工物質離子對氟離子的比率減小了至少5%。在某些實施例中，與基線相比，純加工物質離子的射束電流增加了至少10%。 In one embodiment, a method for implanting a processing substance into a workpiece is disclosed. The method includes: supplying energy to a first source gas containing the processing substance and fluorine and neon in a chamber to form a plasma in the chamber And extracting ions from the plasma and directing the ions to the workpiece, wherein compared with the baseline when neon is not used, the amount of pure processed material ions extracted from the plasma accounts for the percentage of all processed material-containing ions increased by at least 5%. In some embodiments, the amount of pure processed material ions extracted from the plasma as a percentage of all processed material-containing ions increases by at least 10% compared to the baseline. In some embodiments, the ratio of processed material ions to fluoride ions extracted from the plasma is reduced by at least 5% compared to the baseline. In certain embodiments, the beam current of pure processed material ions is increased by at least 10% compared to the baseline.

在另一實施例中揭露一種將摻雜劑植入工件中的方法，所述方法包括：在腔室中對包含摻雜劑及氟的第一來源氣體、包含氫以及鍺與矽中的至少一者的第二來源氣體以及氖供能，以在腔室中形成等離子體；以及使來自等離子體的離子朝工件加速且未使用質量分析，其中引入的氣體的總體積的20%與90%之間包含氖，且其中自等離子體提取的離子的組成受氖的引入的影響。在某些實施例中，引入的氣體的總體積的25%與50%之間包含氖。在某些實施例中，摻雜劑包含硼。 In another embodiment, a method for implanting a dopant into a workpiece is disclosed. The method includes: treating a first source gas containing the dopant and fluorine, hydrogen, and at least one of germanium and silicon in a chamber. One of the second source gas and neon is energized to form plasma in the chamber; and the ions from the plasma are accelerated toward the workpiece without mass analysis, 20% and 90% of the total volume of the introduced gas Neon is contained in between, and the composition of ions extracted from the plasma is affected by the introduction of neon. In some embodiments, between 25% and 50% of the total volume of the introduced gas contains neon. In certain embodiments, the dopant includes boron.

在另一實施例中揭露一種用於加工工件的設備。所述設備包括：離子源，具有由腔室壁界定的腔室，其中所述離子源在腔室中產生等離子體；第一來源氣體容器，含有加工物質及氟，與腔室連通；第二來源氣體容器，含有氫以及矽與鍺中的至少一 者，與腔室連通；第三來源氣體容器，含有氖，與腔室連通；以及用以保持工件的工件支撐件，其中與不使用氖時的基線相比，用於加工工件的設備以足以使自等離子體提取的純加工物質離子的量占所有含加工物質的離子的百分比增加至少5%的量，將氖引入至腔室中。在某些實施例中，摻雜劑包含硼。在某些實施例中，來自等離子體的離子被引向工件且未進行質量分析。在某些實施例中，引入至腔室的氣體的總量的20%至90%包含氖。在某些實施例中，氖的量足以使純加工物質離子的射束電流相對於基線增加至少10%。 In another embodiment, a device for processing a workpiece is disclosed. The device includes: an ion source having a chamber defined by a chamber wall, wherein the ion source generates plasma in the chamber; a first source gas container, containing a processing substance and fluorine, and communicating with the chamber; Source gas container, containing hydrogen and at least one of silicon and germanium Which is connected to the chamber; the third source gas container, which contains neon, is connected to the chamber; and a workpiece support for holding the workpiece, wherein compared with the baseline when neon is not used, the equipment for processing the workpiece is sufficient Increase the amount of pure processed material ions extracted from the plasma to the percentage of all processed material-containing ions by at least 5%, and introduce neon into the chamber. In certain embodiments, the dopant includes boron. In some embodiments, the ions from the plasma are directed to the workpiece without mass analysis. In certain embodiments, 20% to 90% of the total amount of gas introduced into the chamber contains neon. In certain embodiments, the amount of neon is sufficient to increase the beam current of the pure processed material ions by at least 10% relative to the baseline.

100、300、510:離子源 100, 300, 510: ion source

105、605:腔室 105, 605: chamber

107、607:等離子體腔室壁 107, 607: Plasma chamber wall

110:氣體入口 110: gas inlet

111:第二氣體入口 111: second gas inlet

112:第三氣體入口 112: Third gas inlet

120、620:射頻天線 120, 620: RF antenna

125、625:介電窗 125, 625: Dielectric window

130、330:提取抑制電極 130, 330: Extraction suppression electrode

140、340a、340b:孔 140, 340a, 340b: holes

150、350:接地電極 150, 350: ground electrode

160:工件 160: Workpiece

165:工件支撐件 165: Workpiece support

170:第一來源氣體容器 170: First source gas container

171:第二來源氣體容器 171: Second source gas container

172:第三來源氣體容器 172: Third Source Gas Container

178:單一氣體容器 178: Single gas container

180:離子束 180: ion beam

200、210、220、290、291、292、293、294、400、410、420、490、491、492、493、494、495:線 200, 210, 220, 290, 291, 292, 293, 294, 400, 410, 420, 490, 491, 492, 493, 494, 495: Line

250、260、270、280、450、455、460、465、470、475、480:條形圖 250, 260, 270, 280, 450, 455, 460, 465, 470, 475, 480: bar graph

305a:第一子腔室 305a: The first subchamber

305b:第二子腔室 305b: second subchamber

370:箭頭 370: Arrow

380a:氬離子束 380a: Argon ion beam

380b:摻雜劑離子束 380b: dopant ion beam

390:腔室分離器 390: Chamber separator

500:束線離子植入機 500: Beam line ion implanter

520:束線組件 520: Harness assembly

600:工件加工設備 600: Workpiece processing equipment

610:壓板 610: Pressure Plate

為了更佳地理解本發明，參照併入本案供參考的附圖，且在附圖中：圖1A至圖1C繪示出根據不同實施例的工件加工系統。 In order to better understand the present invention, refer to the accompanying drawings incorporated in this case for reference, and in the accompanying drawings: FIGS. 1A to 1C illustrate workpiece processing systems according to different embodiments.

圖2A是離子束電流隨著氬氣體濃度而變化的代表性圖表。 Figure 2A is a representative graph of ion beam current changes with argon gas concentration.

圖2B是離子束電流隨著氬氣體濃度而變化的第二圖表。 Fig. 2B is a second graph of ion beam current changes with argon gas concentration.

圖3繪示出根據另一實施例的植入系統。 Fig. 3 illustrates an implant system according to another embodiment.

圖4A是離子束電流隨著氖氣體濃度而變化的代表性圖表。 Figure 4A is a representative graph of ion beam current changes with neon gas concentration.

圖4B是離子束電流隨著氖氣體濃度而變化的第二圖表。 Fig. 4B is a second graph of ion beam current changes with neon gas concentration.

圖5是工件加工系統的另一實施例。 Fig. 5 is another embodiment of the workpiece processing system.

圖6是工件加工系統的另一實施例。 Fig. 6 is another embodiment of the workpiece processing system.

如上所述，例如氟化物等鹵素系物質的離子化可導致自離子源的內表面釋放的顆粒被植入工件中。這些污染物可包含鋁、碳、氧、矽、氟系化合物以及其他不想要的物質(包括作為雜質元素而存在的重金屬)。一種解決由自由鹵素離子造成的損害的方法可為引入額外的來源氣體。 As described above, the ionization of halogen-based substances such as fluoride can cause particles released from the inner surface of the ion source to be implanted in the workpiece. These pollutants may include aluminum, carbon, oxygen, silicon, fluorine-based compounds, and other undesirable substances (including heavy metals present as impurity elements). One way to solve the damage caused by free halogen ions may be to introduce additional source gas.

圖1A至圖1C繪示出工件加工系統的各種實施例，所述工件加工系統可將多種來源氣體引入至離子源。在這些圖中的每一者中，存在離子源100。此離子源100包括由等離子體腔室壁107界定的腔室105，等離子體腔室壁107可由石墨或另一合適的材料構造而成。此腔室105可經由氣體入口110而被供以存儲於例如第一來源氣體容器170等一個或多個來源氣體容器中的一種或多種來源氣體。此來源氣體可由射頻(RF)天線120或另一等離子體產生機構提供能量，以產生等離子體。射頻天線120與向射頻天線120供應功率的射頻電源(圖中未示出)電性通信。可在射頻天線120與腔室105的內部之間設置例如石英窗或氧化鋁窗等介電窗125。腔室105更包括可供離子穿過的孔140。對設置於孔140外部的提取抑制電極130施加負電壓，以經由孔140自腔室105中的等離子體提取為離子束180的形式的帶正電荷的離子，並引向可設置於工件支撐件165上的工件160。也可採用接地電極150。在某些實施例中，孔140位於腔室105的一側上(與包括介電窗125的相對側)。如圖1A所示，第二來源氣體可存儲於 第二來源氣體容器171中，並經由第二氣體入口111而被引入至腔室105。第三來源氣體可存儲於第三來源氣體容器172中，並經由第三氣體入口112而被引入至腔室105。在另一實施例中，在圖1B中所示，第二來源氣體可存儲於第二來源氣體容器171中，且第三來源氣體可存儲於第三來源氣體容器172中。第二來源氣體及第三來源氣體均可經由第一來源氣體使用的同一氣體入口110而被引入至腔室105。在另一實施例中，如圖1C中所繪示，第二來源氣體與第三來源氣體可在單一氣體容器178中與第一來源氣體混合。此氣體的混合物然後經由氣體入口110而被引入至腔室105。 Figures 1A to 1C illustrate various embodiments of a workpiece processing system that can introduce a variety of source gases to an ion source. In each of these figures, there is an ion source 100. The ion source 100 includes a chamber 105 defined by a plasma chamber wall 107, which may be constructed of graphite or another suitable material. The chamber 105 can be supplied with one or more source gases stored in one or more source gas containers such as the first source gas container 170 through the gas inlet 110. The source gas can be powered by a radio frequency (RF) antenna 120 or another plasma generating mechanism to generate plasma. The radio frequency antenna 120 is in electrical communication with a radio frequency power supply (not shown in the figure) that supplies power to the radio frequency antenna 120. A dielectric window 125 such as a quartz window or an alumina window may be provided between the radio frequency antenna 120 and the inside of the cavity 105. The chamber 105 further includes a hole 140 through which ions can pass. A negative voltage is applied to the extraction suppression electrode 130 provided outside the hole 140 to extract positively charged ions in the form of an ion beam 180 from the plasma in the chamber 105 through the hole 140, and guide them to a workpiece support that can be set 165 on the workpiece 160. The ground electrode 150 may also be used. In some embodiments, the hole 140 is located on one side of the chamber 105 (the opposite side that includes the dielectric window 125). As shown in Figure 1A, the second source gas can be stored in The second source gas container 171 is introduced into the chamber 105 through the second gas inlet 111. The third source gas may be stored in the third source gas container 172 and introduced into the chamber 105 through the third gas inlet 112. In another embodiment, as shown in FIG. 1B, the second source gas may be stored in the second source gas container 171, and the third source gas may be stored in the third source gas container 172. Both the second source gas and the third source gas can be introduced into the chamber 105 through the same gas inlet 110 used by the first source gas. In another embodiment, as shown in FIG. 1C, the second source gas and the third source gas may be mixed with the first source gas in a single gas container 178. This gas mixture is then introduced into the chamber 105 via the gas inlet 110.

在這些實施例的任一實施例中，第一來源氣體、第二來源氣體及第三來源氣體可同時地或依序地引入至腔室105。儘管這些圖繪示出使用三種不同的來源氣體，但本發明並非僅限於任何特定的數量。這些圖旨在繪示出可將多種來源氣體引入至腔室105的各種實施例。然而，其他實施例也是可能實行的，且處於本發明的範圍內。 In any of these embodiments, the first source gas, the second source gas, and the third source gas may be introduced into the chamber 105 simultaneously or sequentially. Although these figures illustrate the use of three different source gases, the present invention is not limited to any specific quantity. These figures are intended to illustrate various embodiments in which multiple source gases can be introduced into the chamber 105. However, other embodiments are also possible and are within the scope of the present invention.

圖1A至圖1C繪示出工件加工系統的實施例。然而，本發明並非僅限於這些實施例。舉例而言，圖5繪示出工件加工系統的另一實施例，所述工件加工系統可為束線離子植入機500。束線離子植入機500包括離子源510，其中來源氣體被引入離子源510。離子源510可包括具有孔的腔室，可經由所述孔提取離子。第一來源氣體可存儲於第一來源氣體容器170中，第二來源氣體 可存儲於第二來源氣體容器171中，且第三來源氣體可存儲於第三來源氣體容器172中。這些來源氣體可經由氣體入口110而被引入至離子源510。當然，這些來源氣體可以其他方式而引入，例如圖1A及圖1C所繪示的方式。 Fig. 1A to Fig. 1C illustrate an embodiment of a workpiece processing system. However, the present invention is not limited to these examples. For example, FIG. 5 illustrates another embodiment of a workpiece processing system. The workpiece processing system may be a beam line ion implanter 500. The beamline ion implanter 500 includes an ion source 510 in which a source gas is introduced into the ion source 510. The ion source 510 may include a chamber having holes through which ions may be extracted. The first source gas can be stored in the first source gas container 170, and the second source gas It can be stored in the second source gas container 171, and the third source gas can be stored in the third source gas container 172. These source gases may be introduced into the ion source 510 through the gas inlet 110. Of course, these source gases can be introduced in other ways, such as the ways shown in FIGS. 1A and 1C.

離子源510通過對來源氣體供能使其成為等離子體而產生離子。在某些實施例中，可使用旁熱式陰極(indirectly heated cathode，IHC)(但可使用其他機制)來產生等離子體。然後使來自等離子體的離子加速穿過離子源510中的孔作為離子束180。然後將此離子束180引向對離子束180進行操縱的一組束線元件520。舉例而言，束線元件520可對來自離子束180的離子進行加速、減速或重新導向。在某些實施例中，束線組件520可包括質量分析器。所述質量分析器可用於在不想要的物質撞擊工件160之前，自離子束180移除所述不想要的物質。工件160可設置於工件支撐件165上。 The ion source 510 generates ions by energizing the source gas to turn it into plasma. In some embodiments, an indirectly heated cathode (IHC) may be used (but other mechanisms may be used) to generate plasma. The ions from the plasma are then accelerated through the holes in the ion source 510 as an ion beam 180. This ion beam 180 is then directed to a set of beamline elements 520 that manipulate the ion beam 180. For example, the beam line element 520 can accelerate, decelerate, or redirect ions from the ion beam 180. In some embodiments, the beamline assembly 520 may include a mass analyzer. The mass analyzer can be used to remove the unwanted substances from the ion beam 180 before they impact the workpiece 160. The workpiece 160 may be set on the workpiece support 165.

圖6繪示出可與本發明一起使用的另一工件加工設備。此工件加工設備600包括由等離子體腔室壁607界定的腔室605。與圖1B纇似，腔室605可經由氣體入口110而與第一來源氣體容器170、第二來源氣體容器171及第三來源氣體容器172連通。然而，在其他實施例中，來源氣體可如圖1A或圖1C所示進行配置。此外，與圖1B纇似，所述設備可包括在上面設置有射頻天線620的介電窗625。與圖1B纇似，所述射頻天線用於在腔室605內產生等離子體。當然，也可使用其他等離子體產生器。在此工件加 工設備600中，工件160設置於腔室605內。使用壓板610來保持工件160。在某些實施例中，可對壓板610施加偏壓將來自等離子體的離子以離子束180的形式朝工件160加速。 Figure 6 illustrates another workpiece processing equipment that can be used with the present invention. This workpiece processing equipment 600 includes a chamber 605 defined by a plasma chamber wall 607. Similar to FIG. 1B, the chamber 605 can communicate with the first source gas container 170, the second source gas container 171 and the third source gas container 172 through the gas inlet 110. However, in other embodiments, the source gas may be configured as shown in FIG. 1A or FIG. 1C. In addition, similar to FIG. 1B, the device may include a dielectric window 625 on which a radio frequency antenna 620 is disposed. Similar to FIG. 1B, the radio frequency antenna is used to generate plasma in the chamber 605. Of course, other plasma generators can also be used. Add in this artifact In the equipment 600, the workpiece 160 is set in the cavity 605. The pressing plate 610 is used to hold the workpiece 160. In some embodiments, a bias voltage may be applied to the platen 610 to accelerate ions from the plasma toward the workpiece 160 in the form of an ion beam 180.

第一來源氣體(也被稱為進料氣體(feed gas))可包含例如與氟結合的硼等摻雜劑。因此，進料氣體可為DFn或DmFn的形式，其中D表示摻雜劑原子，所述摻雜劑原子可為硼、鎵、磷、砷或另一3族或5族元素。在其他實施例中，第一來源氣體可包含與氟結合的加工物質。因此，儘管在本發明通篇中使用用語“摻雜劑”，但應理解存在可使用的且可能不是摻雜劑的其他加工物質。因此，第一來源氣體包含加工物質及氟。在某些實施例中，加工物質為摻雜劑。 The first source gas (also referred to as feed gas) may contain dopants such as boron combined with fluorine. Therefore, the feed gas may be in the form of DF n or D m F n , where D represents a dopant atom, which may be boron, gallium, phosphorous, arsenic, or another group 3 or group 5 element. In other embodiments, the first source gas may include a processing substance combined with fluorine. Therefore, although the term "dopant" is used throughout this invention, it should be understood that there are other processing substances that may be used and may not be dopants. Therefore, the first source gas contains processing materials and fluorine. In some embodiments, the processing substance is a dopant.

第二來源氣體可為具有化學式XHn或XmHn的分子，其中H為氫。X可為摻雜劑物質，例如以上所述摻雜劑物質中的任一者。作為另一選擇，X也可為不影響工件160的導電性的原子。舉例而言，如果工件160包含矽，則X可為4族元素，例如矽及鍺。第三來源氣體可為惰性氣體，例如氦、氬、氖、氪及氙。 The second source gas may be a molecule with the chemical formula XH n or X m H n , where H is hydrogen. X may be a dopant substance, such as any of the dopant substances described above. Alternatively, X may be an atom that does not affect the conductivity of the workpiece 160. For example, if the workpiece 160 contains silicon, X may be a group 4 element, such as silicon and germanium. The third source gas can be an inert gas, such as helium, argon, neon, krypton, and xenon.

換言之，第一來源氣體可為BF3或B2F4，而第二來源氣體可為例如PH3、SiH4、NH3、GeH4、B2H6或AsH3。在這些實施例的每一實施例中，第三來源氣體可為惰性氣體，例如氦、氬、氖、氪或氙。此列表表示可使用的可能的物質。應理解其他物質也是可能使用的。 In other words, the first source gas can be BF 3 or B 2 F 4 , and the second source gas can be, for example, PH 3 , SiH 4 , NH 3 , GeH 4 , B 2 H 6 or AsH 3 . In each of these embodiments, the third source gas may be an inert gas, such as helium, argon, neon, krypton, or xenon. This list shows the possible substances that can be used. It should be understood that other substances may also be used.

通過將第一來源氣體與第二來源氣體進行組合，氟離子 的有害效應可減小。舉例而言，不受任何特定理論的限制，氫的引入可在介電窗125上產生膜或塗層。此用於保護介電窗125，從而減少源於介電窗125的包含於所提取離子束180中的污染物的量。此外，第二來源氣體可塗布等離子體腔室壁107的內表面，其可為污染物的另一來源。此塗布可減小氟離子與等離子體腔室壁107的內表面之間的相互作用，從而減少所產生的污染物的量。 By combining the first source gas and the second source gas, fluoride ion The harmful effects of can be reduced. For example, without being bound by any particular theory, the introduction of hydrogen can produce a film or coating on the dielectric window 125. This is used to protect the dielectric window 125, thereby reducing the amount of contaminants contained in the extracted ion beam 180 originating from the dielectric window 125. In addition, the second source gas may coat the inner surface of the plasma chamber wall 107, which may be another source of pollutants. This coating can reduce the interaction between the fluorine ions and the inner surface of the plasma chamber wall 107, thereby reducing the amount of pollutants generated.

第二來源氣體的引入可減少污染物的產生，並減少這些污染物併入離子束180中。然而，在某些實施例中，使用第一來源氣體及第二來源氣體產生的所得離子束可能不包含足量的所需離子。 The introduction of the second source gas can reduce the generation of pollutants and reduce the incorporation of these pollutants into the ion beam 180. However, in some embodiments, the resulting ion beam generated using the first source gas and the second source gas may not contain a sufficient amount of desired ions.

圖2A繪示出多個條形圖，所述條形圖繪示出當氬(Ar)(氬在本實施例中用作第三來源氣體)的量變化時，由使用BF3作為第一來源氣體及使用GeH4作為第二來源氣體的離子源產生的離子物質。在這些條形圖的每一條形圖中，射頻功率為8kW，且BF3與GeH4組合的流動速率為18sccm。此外，BF3對GeH4的比保持恒定，為9：1。 2A depicts a plurality of bar graphs, the bar graph depicts when the amount of argon (Ar) (argon is used as the third source gas in this embodiment) changes, by using BF 3 as the first Source gas and ion substances generated by an ion source using GeH 4 as the second source gas. In each of these bar graphs, the radio frequency power is 8 kW, and the flow rate of the combination of BF 3 and GeH 4 is 18 sccm. In addition, the ratio of BF 3 to GeH 4 remains constant at 9:1.

在所述條形圖的每一條形圖中，可以看出離子源100對BF3進行離子化以形成硼離子(即，B+)以及BFx +離子，其中BFx包括BF、BF2及BF3。此外，產生氟離子。最後，還產生可為第二來源氣體的組分或可為雜質的多種其他離子物質。 In each of the bar graphs, it can be seen that the ion source 100 ionizes BF 3 to form boron ions (ie, B + ) and BF x + ions, where BF x includes BF, BF 2 and BF 3 . In addition, fluoride ions are generated. Finally, a variety of other ionic species that can be components of the second source gas or can be impurities are also generated.

如上所述，第二來源氣體的引入可減少在離子束中引入的污染物的量。如上所陳述，在使用離子束來植入工件而未進行 質量分析時，此意義重大。 As described above, the introduction of the second source gas can reduce the amount of pollutants introduced in the ion beam. As stated above, in the use of ion beam to implant the workpiece without performing This is of great significance in quality analysis.

條形圖250繪示出在不引入氬的情況下，(也被稱為基線)離子束的組成。如線200中所見，在此種配置中，離子束中幾乎69%的離子為含摻雜劑的離子，其中在本實例中所述摻雜劑為硼(B)。此度量指標被稱為硼分數(boron fraction)或摻雜劑分數(dopant fraction)。然而，諸多含摻雜劑的離子也含有氟化物，例如為BF+、BF2 +及BF3 +的形式。事實上，如線210中所示，僅約45%的含摻雜劑的離子為純摻雜劑(即，B+)。此比率被稱為硼純度百分比或摻雜劑純度百分比。在其他實施例中，此比率可被稱為加工物質純度百分比。最後，儘管69%的離子束含有硼，但非常大的百分比的離子也含有氟。事實上，線220示出作為離子束180的一部分而提取的氟離子對摻雜劑離子的比率。以此比率使用的氟離子為對被提取的所有氟離子的測量。換言之，此包含純氟離子(Fx +)以及包含例如BFx +等其他物質的離子。每一氟離子被單獨計數；因此，舉例而言，BF2 +被計數為兩個氟離子。摻雜劑離子的數量以相同的方式來計算。線220示出存在實際上比硼離子多的氟離子。此度量指標被稱為F/B比率。 The bar graph 250 depicts the composition of the ion beam (also referred to as the baseline) without introducing argon. As seen in line 200, in this configuration, almost 69% of the ions in the ion beam are dopant-containing ions, where the dopant in this example is boron (B). This metric is called boron fraction or dopant fraction. However, many dopant-containing ions also contain fluoride, for example in the form of BF + , BF 2 + and BF 3 + . In fact, as shown in line 210, only about 45% of the dopant-containing ions are pure dopants (ie, B + ). This ratio is called boron purity percentage or dopant purity percentage. In other embodiments, this ratio may be referred to as the processed material purity percentage. Finally, although 69% of ion beams contain boron, a very large percentage of ions also contain fluorine. In fact, line 220 shows the ratio of fluorine ions extracted as part of ion beam 180 to dopant ions. The fluoride ion used at this ratio is a measurement of all the fluoride ions extracted. In other words, this includes pure fluoride ions (F x + ) and ions including other substances such as BF x + . Each are counted separately fluoride ions; Thus, for example, BF 2 + ions is counted as two fluoro. The number of dopant ions is calculated in the same way. Line 220 shows that there are actually more fluoride ions than boron ions. This metric is called the F/B ratio.

條形圖260繪示出在引入至離子腔室的總氣體的大約19%為第三來源氣體的情況下離子束的組成，所述第三來源氣體在本實施例中可為氬。應注意含摻雜劑的離子(即，B+及BFx +)的總射束電流幾乎保持不變，為約360mA。然而，離子束的組成存在著變化。具體而言，如線200上所見，硼分數已主要由於已產 生的額外氬離子而略有減小。然而，出乎意料地，如線210中所示，與含摻雜劑的離子的總數量相比，純摻雜劑離子的百分比(硼純度百分比或摻雜劑純度百分比)實際上已增加！事實上，純硼離子的射束電流也已增加。此外，如線220中所示，作為離子束的一部分而提取的氟離子對硼離子的比率(即，F/B比率)也已出乎意料地減小至約100%。此外，氟化物離子的射束電流也已減小。換言之，氬作為第三來源氣體而引入，對所得離子束的組成產生了影響。具體而言，氬的引入已使得純硼離子的形成相對於含硼的離子的總數量而增加。有趣的是，氬的引入還減小了氟離子對硼離子的比率。如上所陳述，在不執行質量分析的實施例中，這些變化可提高所植入工件的性能。 The bar graph 260 depicts the composition of the ion beam when approximately 19% of the total gas introduced into the ion chamber is a third source gas, which may be argon in this embodiment. It should be noted that the total beam current of the dopant-containing ions (i.e., B + and BF x + ) remains almost unchanged at about 360 mA. However, there are changes in the composition of the ion beam. Specifically, as seen on line 200, the boron fraction has been slightly reduced mainly due to the extra argon ions that have been generated. However, unexpectedly, as shown in line 210, the percentage of pure dopant ions (boron purity percentage or dopant purity percentage) has actually increased compared to the total number of dopant-containing ions! In fact, the beam current of pure boron ions has also increased. In addition, as shown in line 220, the ratio of fluoride ions to boron ions extracted as part of the ion beam (ie, F/B ratio) has also unexpectedly decreased to about 100%. In addition, the beam current of fluoride ions has also been reduced. In other words, argon is introduced as a third source gas, which affects the composition of the resulting ion beam. Specifically, the introduction of argon has increased the formation of pure boron ions relative to the total number of boron-containing ions. Interestingly, the introduction of argon also reduces the ratio of fluoride ion to boron ion. As stated above, in embodiments where quality analysis is not performed, these changes can improve the performance of the implanted workpiece.

諸多這些趨勢隨著引入更大百分比的氬而繼續。條形圖270繪示出在引入至腔室105中的所有氣體的約32%包含氬的情況下，離子束的組成。在此濃度下，含硼的離子的射束電流開始略有減小(自360mA減小至約320mA)。硼分數也已由於氬離子的數量增加而略有減小。然而，其他度量指標已得到改善。具體而言，硼純度百分比實際上增加至幾乎50%。此外，F/B比率減小至約95%。有趣的是，包含並非含硼的離子、氟離子、或氬離子的所有離子的其他物質的量實際上在此氬百分比下減少。氟離子的射束電流也減小至小於約20mA。 Many of these trends continue with the introduction of larger percentages of argon. The bar graph 270 depicts the composition of the ion beam when approximately 32% of all gases introduced into the chamber 105 contain argon. At this concentration, the beam current of boron-containing ions begins to decrease slightly (from 360 mA to about 320 mA). The boron fraction has also decreased slightly due to the increase in the number of argon ions. However, other metrics have been improved. Specifically, the boron purity percentage actually increases to almost 50%. In addition, the F/B ratio is reduced to about 95%. Interestingly, the amount of other substances including all ions that are not boron-containing ions, fluoride ions, or argon ions actually decreases at this argon percentage. The beam current of fluoride ions is also reduced to less than about 20 mA.

條形圖280繪示出在引入至腔室105中的所有氣體的約48%包含氬的情況下，離子束的組成。在此濃度下，含硼離子的射 束電流再次略有減小(自320mA減小至約290mA)。硼分數也已由於氬離子的數量增加而略微減少至約60%。然而，其他度量指標已繼續改善。具體而言，硼純度百分比實際上增加至約50%。此外，F/B比率減小至約90%。此外，其他物質的射束電流也已減小。氟離子的射束電流也減小至約10mA。 The bar graph 280 depicts the composition of the ion beam when approximately 48% of all gases introduced into the chamber 105 contain argon. At this concentration, the radiation containing boron ions The beam current decreased slightly again (from 320mA to about 290mA). The boron fraction has also been slightly reduced to about 60% due to the increase in the number of argon ions. However, other metrics have continued to improve. Specifically, the boron purity percentage actually increases to about 50%. In addition, the F/B ratio is reduced to about 90%. In addition, the beam current of other substances has also been reduced. The beam current of fluoride ions is also reduced to about 10 mA.

出人意料地，以非常大的百分比(例如高達約50%)引入氬仍使得諸多離子束度量指標得到改善。圖2B示出以不同格式表示的諸多這些度量指標。具體而言，含硼離子的總射束電流繪示於線290中。應注意，即使當氬的量增加至引入至腔室105中的總氣體的約47%時，總含硼射束電流仍保持高於約290mA。然而，當氬的量超過約20%時，總含硼射束電流減小。有趣的是，如線291中所示，純含硼離子的射束電流隨著引入至腔室105中的氬的量增加至約20%而增大。然而，在更大百分比的氬下，純含硼離子的射束電流略有減小。事實上，純硼射束電流在無氬時為約160mA，且在總氣體的約20%為氬時增加至約172mA。純硼射束電流然後隨著氬百分比的繼續增加，而減小至約145mA。F/B比率繪示為線292，所述線292相同於圖2A中的線220。如上所述，F/B比率隨著氬的量貫穿所述範圍下增加而減小。類似地，硼分數繪示為線293，所述線293相同於圖2A中的線200。最後，硼純度分數繪示於線294中，且相同於圖2A中的線210。圖2B繪示出隨著引入至腔室105中的氬的百分比增加，含硼的離子的總射束電流(線290)在氬的百分比超過約20%時減小。純硼 的射束電流(線291)也在氬的百分比超過約20%時減小。然而，硼純度分數(線294)貫穿此整個範圍下增加。此外，氟離子對硼離子的比率(如線292所示的F/B比率)貫穿此範圍下減小。最後，儘管硼分數穩定地減少(線293)，但含有硼的離子的百分比在貫穿整個範圍下保持高於約60%。 Unexpectedly, the introduction of argon at a very large percentage (for example, up to about 50%) still resulted in improvements in many ion beam metrics. Figure 2B shows many of these metrics expressed in different formats. Specifically, the total beam current containing boron ions is plotted in line 290. It should be noted that even when the amount of argon is increased to about 47% of the total gas introduced into the chamber 105, the total boron-containing beam current remains higher than about 290 mA. However, when the amount of argon exceeds about 20%, the total boron-containing beam current decreases. Interestingly, as shown in line 291, the beam current of pure boron-containing ions increases as the amount of argon introduced into the chamber 105 increases to about 20%. However, with a larger percentage of argon, the beam current of pure boron-containing ions is slightly reduced. In fact, the pure boron beam current is about 160 mA without argon, and increases to about 172 mA when about 20% of the total gas is argon. The pure boron beam current then decreases to about 145 mA as the argon percentage continues to increase. The F/B ratio is depicted as line 292, which is the same as line 220 in FIG. 2A. As described above, the F/B ratio decreases as the amount of argon increases across the range. Similarly, the boron fraction is depicted as line 293, which is the same as line 200 in FIG. 2A. Finally, the boron purity score is plotted in line 294 and is the same as line 210 in FIG. 2A. 2B illustrates that as the percentage of argon introduced into the chamber 105 increases, the total beam current of boron-containing ions (line 290) decreases when the percentage of argon exceeds about 20%. Pure boron The beam current (line 291) also decreases when the percentage of argon exceeds about 20%. However, the boron purity fraction (line 294) increases throughout this entire range. In addition, the ratio of fluoride ion to boron ion (the F/B ratio shown by line 292) decreases throughout this range. Finally, although the boron fraction is steadily decreasing (line 293), the percentage of ions containing boron remains above about 60% throughout the entire range.

也可使用其他惰性氣體。舉例而言，可使用氖而非使用氬來作為第三來源氣體。 Other inert gases can also be used. For example, neon can be used as the third source gas instead of argon.

圖4A至圖4B繪示出多個條形圖，所述多個條形圖繪示出當氖(Ne)的量變化時由使用BF3作為第一來源氣體以及使用GeH4作為第二來源氣體的離子源產生的離子物質，其中氖在本實施例中用作第三來源氣體。類似於氬，氖作為第三來源氣體而引入對離子束組成及其他度量指標具有正面的有益效果。然而，出人意料地，引入氖的量且其可達成的這些有益效果比氬大得多。事實上，如下文更詳細所示，即使當引入至腔室105的總氣體的超過80%為氖時，仍能達成正面的有益效果。 4A to 4B depict a plurality of bar graphs, the multiple bar graphs depict the use of BF 3 as the first source gas and GeH 4 as the second source when the amount of neon (Ne) changes The ionic substance generated by the gas ion source, in which neon is used as the third source gas in this embodiment. Similar to argon, the introduction of neon as a third source gas has positive beneficial effects on ion beam composition and other metrics. However, unexpectedly, the amount of neon introduced and the benefits it can achieve are much greater than those of argon. In fact, as shown in more detail below, even when more than 80% of the total gas introduced into the chamber 105 is neon, positive beneficial effects can still be achieved.

在這些條形圖中的每一條形圖中，射頻功率為8kW，且BF3與GeH4的組合流動速率為18sccm。此外，BF3對GeH4的比率保持恒定，為9：1。 In each of these bar graphs, the radio frequency power is 8 kW, and the combined flow rate of BF 3 and GeH 4 is 18 sccm. In addition, the ratio of BF 3 to GeH 4 remains constant at 9:1.

如上所述，在所述條形圖中的每一條形圖中，可以看出離子源100對BF3進行離子化以形成硼離子(即，B+)以及BFx +離子，其中BFx包括BF、BF2及BF3。此外，產生氟離子。最後，還產生可為第二來源氣體的組分或可為雜質的多種其他離子物 質。 As described above, in each of the bar graphs, it can be seen that the ion source 100 ionizes BF 3 to form boron ions (ie, B + ) and BF x + ions, where BF x includes BF, BF 2 and BF 3 . In addition, fluoride ions are generated. Finally, a variety of other ionic species that can be components of the second source gas or can be impurities are also generated.

條形圖450繪示出在不引入氖的情況下離子束的組成(也被稱為基線)。如線400中所見，在此配置中，離子束中幾乎75%的離子為含摻雜劑的離子，其中在本實例中摻雜劑為硼。如上所述，此度量指標稱為硼分數或摻雜劑分數。然而，諸多含摻雜劑的離子也含有氟化物，例如為BF+、BF2 +及BF3 +的形式。事實上，如線410中所示，僅約41%的含摻雜劑的離子為純摻雜劑(即，B+)。此比率稱為硼純度分數或摻雜劑純度分數。在其他實施例中，此比率可稱為加工物質純度百分比。最後，儘管75%的離子束含有硼，但非常大的百分比的離子也含有氟。事實上，線420繪示出作為離子束180的一部分而提取的氟離子對摻雜劑離子的比率。以此比率使用的氟離子為對經提取的所有氟離子的測量。換言之，此包含純氟離子(Fx +)以及包含例如BFx +等其他物質的離子。每一氟離子單獨計數；因此，舉例而言，BF2 +計數為兩個氟離子。摻雜劑離子的數量以相同的方式進行計數。線420繪示出存在實際上比硼離子多的氟離子。此度量指標稱為F/B比率。 The bar graph 450 depicts the composition of the ion beam (also called the baseline) without introducing neon. As seen in line 400, in this configuration, almost 75% of the ions in the ion beam are dopant-containing ions, where the dopant is boron in this example. As mentioned above, this metric is called the boron fraction or dopant fraction. However, many dopant-containing ions also contain fluoride, for example in the form of BF + , BF 2 + and BF 3 + . In fact, as shown in line 410, only about 41% of the dopant-containing ions are pure dopants (ie, B + ). This ratio is called the boron purity fraction or dopant purity fraction. In other embodiments, this ratio may be referred to as the purity percentage of the processed material. Finally, although 75% of the ion beam contains boron, a very large percentage of ions also contain fluorine. In fact, line 420 depicts the ratio of fluoride ions extracted as part of ion beam 180 to dopant ions. The fluoride ion used at this ratio is a measurement of all fluoride ions extracted. In other words, this includes pure fluoride ions (F x + ) and ions including other substances such as BF x + . Each individual fluorine ion count; Thus, for example, BF 2 + ions counted as two fluoro. The number of dopant ions is counted in the same way. Line 420 depicts that there are actually more fluoride ions than boron ions. This metric is called the F/B ratio.

條形圖455繪示出在引入至離子腔室的總氣體的大約37.8%為第三來源氣體的情況下，離子束的組成，其中第三來源氣體在本實施例中可為氖。儘管圖4A繪示出使用至少37.8%的總氣體作為第三來源氣體的資料，但應注意，觀察到其中氖的百分比低至20%的正面有益效果。應注意，含摻雜劑的離子(即，B+及BFx +)的總射束電流已自不使用氖時的約420mA增加至約440 mA。此外，離子束的組成存在變化。具體而言，如線400上所見，硼分數已主要由於已產生的額外氖離子而略有減小。然而，出人意料地，如線410中所示，與含摻雜劑的離子的總數量相比，純摻雜劑離子的百分比(硼純度百分比或摻雜劑純度百分比)實際上已增加！事實上，純硼離子的射束電流也已增加。此外，如線420中所示，氟離子對硼離子的比率(即，F/B比率)也已出乎意料地減小至約105%。此外，氟化物離子的射束電流也已減小。換言之，氖作為第三來源氣體被引入，對自等離子體提取的所得離子束的組成產生了影響。具體而言，氖的引入已使純硼離子的形成相對於含硼的離子的總數量而增加。有趣的是，氖的引入還減小了氟離子對硼離子的比率。如上所陳述，在不執行質量分析的實施例中，這些變化可提高所植入工件的性能。 The bar graph 455 depicts the composition of the ion beam when about 37.8% of the total gas introduced into the ion chamber is the third source gas, where the third source gas may be neon in this embodiment. Although FIG. 4A illustrates the use of at least 37.8% of the total gas as the third source gas, it should be noted that the positive beneficial effect of the neon percentage is as low as 20%. It should be noted that the total beam current of the dopant-containing ions (ie, B + and BF x + ) has increased from about 420 mA when neon is not used to about 440 mA. In addition, the composition of the ion beam varies. Specifically, as seen on line 400, the boron fraction has been slightly reduced mainly due to the extra neon ions that have been generated. However, unexpectedly, as shown in line 410, the percentage of pure dopant ions (boron purity percentage or dopant purity percentage) has actually increased compared to the total number of dopant-containing ions! In fact, the beam current of pure boron ions has also increased. In addition, as shown in line 420, the ratio of fluoride ions to boron ions (ie, the F/B ratio) has also unexpectedly decreased to about 105%. In addition, the beam current of fluoride ions has also been reduced. In other words, neon is introduced as a third source gas, which affects the composition of the resulting ion beam extracted from the plasma. Specifically, the introduction of neon has increased the formation of pure boron ions relative to the total number of boron-containing ions. Interestingly, the introduction of neon also reduces the ratio of fluoride ions to boron ions. As stated above, in embodiments where quality analysis is not performed, these changes can improve the performance of the implanted workpiece.

這些趨勢中的每一趨勢隨著更大百分比的氖引入而繼續。條形圖460繪示出在引入至腔室105中的所有氣體的約54.9%包含氖的情況下，離子束的組成。在此濃度下，含硼的離子的射束電流開始略有減小，自440mA減小至約430mA。然而，含硼的離子的射束電流仍大於基線。繪示為線400的硼分數也已由於氖離子的數量增加而略有減小。然而，其他度量指標已得到改善。具體而言，線410中所示的硼純度分數實際上增加至接近50%。此外，線420中所示的F/B比率減小至約100%。有趣的是，在此氖百分比下，包含並非為含硼的離子、氟離子、或氖離子的所有離子的其他物質的量實際上減少。氟離子的射束電流也減小至小 於約40mA。 Each of these trends continues with the introduction of a larger percentage of neon. The bar graph 460 depicts the composition of the ion beam when about 54.9% of all the gases introduced into the chamber 105 contain neon. At this concentration, the beam current of boron-containing ions began to decrease slightly, from 440 mA to about 430 mA. However, the beam current of boron-containing ions is still greater than the baseline. The boron fraction shown as line 400 has also slightly decreased due to the increase in the number of neon ions. However, other metrics have been improved. Specifically, the boron purity fraction shown in line 410 actually increases to nearly 50%. In addition, the F/B ratio shown in line 420 is reduced to approximately 100%. Interestingly, at this neon percentage, the amount of other substances including all ions that are not boron-containing ions, fluoride ions, or neon ions actually decreases. The beam current of fluoride ions is also reduced to a small At about 40mA.

條形圖465繪示出在引入至腔室105中的所有氣體的約64.6%包含氖的情況下，離子束的組成。在此濃度下，含硼的離子的射束電流再次略有減小，自430mA減小至約420mA。然而，含硼的離子的射束電流仍大於在基線中的射束電流。線400中所示的硼分數也已由於氖離子的數量增加而略微減小至約70%。然而，其他度量指標已得到改善。具體而言，線410中所示的硼純度分數實際上增加至約48%。此外，線420中所示的F/B比率減小至低於100%。此外，其他物質的射束電流也已減小。氟離子的射束電流也保持相對恒定，為約20mA。 The bar graph 465 depicts the composition of the ion beam when approximately 64.6% of all gases introduced into the chamber 105 contain neon. At this concentration, the beam current of boron-containing ions decreases slightly again, from 430 mA to about 420 mA. However, the beam current of the boron-containing ions is still greater than the beam current in the baseline. The boron fraction shown in line 400 has also been slightly reduced to about 70% due to the increase in the number of neon ions. However, other metrics have been improved. Specifically, the boron purity fraction shown in line 410 actually increases to about 48%. In addition, the F/B ratio shown in line 420 is reduced to below 100%. In addition, the beam current of other substances has also been reduced. The beam current of fluoride ions also remains relatively constant at about 20 mA.

條形圖470繪示出在引入至腔室105中的所有氣體的約70.9%包含氖的情況下，離子束的組成。在此濃度下，含硼的離子的射束電流保持相對恒定，為約420mA。然而，含硼的離子的射束電流保持大於在基線中的射束電流。硼分數也已由於氖離子的數量增加而略微減小至約70%。然而，其他度量指標已得到改善。具體而言，線410中所示的硼純度百分比實際上增加至超過50%。此外，線420中所示的F/B比率減小至約95%。此外，其他物質的射束電流也已減小。氟離子的射束電流也保持相對恒定，為約20mA。 The bar graph 470 depicts the composition of the ion beam when approximately 70.9% of all gases introduced into the chamber 105 contain neon. At this concentration, the beam current of boron-containing ions remains relatively constant, about 420 mA. However, the beam current of the boron-containing ions remains greater than the beam current in the baseline. The boron fraction has also been slightly reduced to about 70% due to the increase in the number of neon ions. However, other metrics have been improved. Specifically, the boron purity percentage shown in line 410 actually increases to more than 50%. In addition, the F/B ratio shown in line 420 is reduced to about 95%. In addition, the beam current of other substances has also been reduced. The beam current of fluoride ions also remains relatively constant at about 20 mA.

條形圖475繪示出在引入至腔室105中的所有氣體的約75.3%包含氖的情況下，離子束的組成。在此濃度下，含硼的離子的射束電流保持相對恒定，為約420mA。線400中所示的硼分數 也已由於氖離子的數量增加而略微減小至略低於70%。然而，其他度量指標已得到改善。具體而言，線410中所示的硼純度分數實際上增加至約52%。此外，線420中所示的F/B比率減小至約90%。此外，其他物質的射束電流也已減小。氟離子的射束電流也略微減小至約15mA。 The bar graph 475 depicts the composition of the ion beam when approximately 75.3% of all gases introduced into the chamber 105 contain neon. At this concentration, the beam current of boron-containing ions remains relatively constant, about 420 mA. The boron fraction shown in line 400 It has also been slightly reduced to slightly less than 70% due to the increase in the number of neon ions. However, other metrics have been improved. Specifically, the boron purity fraction shown in line 410 actually increases to about 52%. In addition, the F/B ratio shown in line 420 is reduced to approximately 90%. In addition, the beam current of other substances has also been reduced. The beam current of fluoride ions is also slightly reduced to about 15 mA.

條形圖480繪示出在引入至腔室105中的所有氣體的約83.0%包含氖的情況下，離子束的組成。在此濃度下，含硼的離子的射束電流略微減小至約410mA。線400中所示的硼分數也已由於氖離子的數量增加而略微減小至約68%。然而，其他度量指標已得到改善。具體而言，線410中所示的硼純度分數實際上增加至約56%。此外，線420中所示的F/B比率減小至約80%。此外，其他物質的射束電流也已減小。氟離子的射束電流也略微減小至約15mA。出人意料地，即使當總氣體的83%為氖時，氖離子束電流仍保持小於約40mA。此可能歸因於氖的高離子化能量。 The bar graph 480 depicts the composition of the ion beam when approximately 83.0% of all gases introduced into the chamber 105 contain neon. At this concentration, the beam current of boron-containing ions is slightly reduced to about 410 mA. The boron fraction shown in line 400 has also slightly decreased to about 68% due to the increase in the number of neon ions. However, other metrics have been improved. Specifically, the boron purity fraction shown in line 410 actually increases to about 56%. In addition, the F/B ratio shown in line 420 is reduced to approximately 80%. In addition, the beam current of other substances has also been reduced. The beam current of fluoride ions is also slightly reduced to about 15 mA. Unexpectedly, even when 83% of the total gas is neon, the neon ion beam current remains less than about 40 mA. This may be due to the high ionization energy of neon.

出人意料地，以非常大的百分比(例如介於20%與90%之間)引入氖仍使得諸多離子束度量指標得到改善。此與氬形成對比，其中氬的引入使射束度量指標改善至高達某一百分比，且然後使這些度量指標降低。事實上，氖的量可高達83%或83%以上是出乎意料的結果。圖4B繪示出以不同格式表示的諸多這些度量指標。具體而言，含硼的離子的總射束電流繪示於線490中。應注意，即使當氖的量增加至引入至腔室105中的總氣體的約83%時，總含硼射束電流保持高於400mA。有趣的是，線491中所繪 示的純含硼的離子的射束電流隨著引入至腔室105中的氖的量增加而增加。事實上，純硼射束電流在為不使用氖時的基線處為約175mA，且在總氣體的83%為氖時增加至約230mA。更具體而言，當引入37.8%的氖時，純硼射束電流相對於所述基線增加大於10%。在基線處，純硼射束電流為約175mA。此在引入37.8%的氖時增加至約195mA。此趨勢隨著氖的量的增加而繼續。舉例而言，在引入64.6%的氖時，純硼射束電流相對於基線增加15%。當氖的量增加時，此增加量為20%或大於20%。F/B比率繪示為線492，所述線492相同於圖4A中的線420。如上所述，F/B比率隨著氖的量在貫穿所述範圍下增加而減小。具體而言，F/B比率在不使用氖時的基線處為112.6%。所述F/B比率隨著37.8%的氖的引入，下降大於6%至105.7%。當氖的量增加時，F/B比率繼續下降。舉例而言，在54.9%的氖下，F/B比率與基線相比降低了幾乎10%。在75.3%的氖下，F/B比率相對於基線下降大於20%。類似地，硼分數繪示為線493，所述線493相同於圖4A中的線400。最後，硼純度分數繪示於線494中，且相同於圖4A中的線410。與基線相比，表示純加工物質離子對總加工物質離子的比率的此硼純度分數在引入37.8%的氖時增加了大於6%。在54.9%的氖下，硼純度分數相對於基線增加幾乎10%。事實上，在高水準的氖稀釋下，硼純度分數相對於基線的提高大於20%！此外，純摻雜劑離子或純加工物質離子的數量占總離子的百分比(稱為純摻雜劑比率)也隨著氖以更大的量引入而增加。此純摻雜劑比率繪示於線495 中。舉例而言，在基線處，所有離子的約31%為純摻雜劑離子。然而，在37.8%的氖下，所述純摻雜劑比率增加了約4%至32.2%。在更高的氖水準下，純摻雜劑離子的百分比可相對於基線增加10%或大於10%。圖4B繪示出隨著引入至腔室105中的氖的百分比增加，含硼的離子的總射束電流(線490)保持大致恒定。然而，例如純硼的射束電流(線491)、硼純度分數(線494)及純摻雜劑比率(線495)等度量指標在貫穿此整個範圍下均有所改善。此外，氟離子對硼離子的比率(如線492所示的F/B比率)在貫穿此範圍下減小，其中當氖的百分比超過約60%時大大減小。最後，儘管硼分數穩定地減小(線493)，但含有硼的離子的百分比在貫穿整個範圍下保持高於70%。 Unexpectedly, the introduction of neon at a very large percentage (for example, between 20% and 90%) still improves many ion beam metrics. This is in contrast to argon, where the introduction of argon improves beam metrics up to a certain percentage, and then reduces these metrics. In fact, the amount of neon can be as high as 83% or more is an unexpected result. Figure 4B depicts many of these metrics in different formats. Specifically, the total beam current of boron-containing ions is plotted in line 490. It should be noted that even when the amount of neon is increased to about 83% of the total gas introduced into the chamber 105, the total boron-containing beam current remains higher than 400 mA. Interestingly, the line drawn in 491 The beam current of the pure boron-containing ions shown increases as the amount of neon introduced into the chamber 105 increases. In fact, the pure boron beam current is about 175 mA at the baseline when neon is not used, and increases to about 230 mA when 83% of the total gas is neon. More specifically, when 37.8% neon is introduced, the pure boron beam current increases by more than 10% relative to the baseline. At the baseline, the pure boron beam current is about 175 mA. This increases to about 195 mA when 37.8% neon is introduced. This trend continues as the amount of neon increases. For example, when 64.6% neon is introduced, the pure boron beam current increases by 15% relative to the baseline. When the amount of neon increases, the increase is 20% or more. The F/B ratio is depicted as line 492, which is the same as line 420 in FIG. 4A. As described above, the F/B ratio decreases as the amount of neon increases across the range. Specifically, the F/B ratio is 112.6% at the baseline when neon is not used. With the introduction of 37.8% neon, the F/B ratio decreased by more than 6% to 105.7%. As the amount of neon increases, the F/B ratio continues to decrease. For example, at 54.9% neon, the F/B ratio is reduced by almost 10% compared to the baseline. Under 75.3% neon, the F/B ratio drops more than 20% from the baseline. Similarly, the boron fraction is depicted as line 493, which is the same as line 400 in FIG. 4A. Finally, the boron purity score is plotted in line 494 and is the same as line 410 in FIG. 4A. Compared with the baseline, this boron purity fraction, which represents the ratio of pure processed material ions to total processed material ions, increased by more than 6% when 37.8% neon was introduced. At 54.9% neon, the boron purity score increased by almost 10% from the baseline. In fact, with a high level of neon dilution, the boron purity score increased by more than 20% from the baseline! In addition, the number of pure dopant ions or pure processing material ions as a percentage of the total ions (referred to as the pure dopant ratio) also increases as neon is introduced in a larger amount. This pure dopant ratio is plotted on line 495 in. For example, at the baseline, about 31% of all ions are pure dopant ions. However, under 37.8% neon, the pure dopant ratio increased by about 4% to 32.2%. At higher levels of neon, the percentage of pure dopant ions can increase by 10% or greater than the baseline. 4B illustrates that as the percentage of neon introduced into the chamber 105 increases, the total beam current of boron-containing ions (line 490) remains approximately constant. However, metrics such as pure boron beam current (line 491), boron purity fraction (line 494), and pure dopant ratio (line 495) have improved throughout this entire range. In addition, the ratio of fluoride ions to boron ions (the F/B ratio shown by line 492) decreases throughout this range, where the percentage of neon is greatly reduced when the percentage of neon exceeds about 60%. Finally, although the boron fraction steadily decreases (line 493), the percentage of ions containing boron remains above 70% throughout the entire range.

在圖2A至圖2B以及圖4A至圖4B中所示的這些出乎意料的結果具有諸多的有益效果。 The unexpected results shown in FIGS. 2A to 2B and 4A to 4B have many beneficial effects.

第一，較重的含摻雜劑的離子(例如BF+、BF2 +及BF3 +)比純摻雜劑離子(例如，B+)傾向於植入更淺的深度。在後續熱處理期間，這些經淺植入的離子更可能向工件外擴散。換言之，所有含摻雜劑的離子的總射束電流可能不指示出實際上植入且保持於工件中的摻雜劑的量。不希望受限於任何特定理論，據信等離子體中的氬及氖的亞穩態可將更大量的含摻雜劑的離子分解成更多所期望的純摻雜劑離子。 First, the heavier dopant-containing ion (e.g., BF +, BF 2 + and BF 3 +) than that of pure dopant ions (e.g., B +) implant tends to a shallower depth. During the subsequent heat treatment, these shallowly implanted ions are more likely to diffuse out of the workpiece. In other words, the total beam current of all dopant-containing ions may not indicate the amount of dopant actually implanted and held in the workpiece. Without wishing to be bound by any particular theory, it is believed that the metastable states of argon and neon in the plasma can decompose a larger amount of dopant-containing ions into more desired pure dopant ions.

第二，以任何形式植入氟可具有有害效應。氟離子的植入可造成工件中的缺陷，從而影響其性能。所植入的氟也可導致 摻雜劑自工件向外擴散。還已知氟阻礙摻雜劑擴散至工件中，使得已退火的摻雜劑分佈淺，此對於太陽電池應用而言為不佳的。 Second, implanting fluorine in any form can have deleterious effects. The implantation of fluoride ions can cause defects in the workpiece, thereby affecting its performance. The implanted fluorine can also cause The dopant diffuses outward from the workpiece. It is also known that fluorine hinders the diffusion of dopants into the workpiece, making the annealed dopant distribution shallow, which is not good for solar cell applications.

第三，氬及/或氖的引入對所產生的其他物質(也被稱為污染物)的產生具有限制效應。不希望受限於任何特定理論，據信這些氣體使等離子體穩定，從而使得腔室壁濺射減少。由於其大的離子化截面，氬及氖相對輕易地對放電進行離子化並使其穩定。因此，等離子體維持於相對低的等離子體電勢下，以使得來自壁材料的離子濺射可減少。 Third, the introduction of argon and/or neon has a limiting effect on the production of other substances (also called pollutants) produced. Without wishing to be bound by any particular theory, it is believed that these gases stabilize the plasma, resulting in reduced chamber wall sputtering. Due to their large ionization cross section, argon and neon ionize and stabilize the discharge relatively easily. Therefore, the plasma is maintained at a relatively low plasma potential so that ion sputtering from the wall material can be reduced.

第四，在植入工件的期間，氬及/或氖離子可濺射於工件的表面沉積層上。此可用於移除在植入過程期間沉積的任何材料。這些材料中的某些材料可能難以在植入之後經由濕式化學過程來移除。 Fourth, during the implantation of the workpiece, argon and/or neon ions can be sputtered on the surface deposition layer of the workpiece. This can be used to remove any material deposited during the implantation process. Some of these materials may be difficult to remove via wet chemical processes after implantation.

第五，在為氖的情形中，高離子化能量暗指產生很少的氖離子。此外，這些離子具有相對低的質量，且因此對工件造成最小的損害。因此，可使用氖來改善射束組成，且幾乎無不利的效應。 Fifth, in the case of neon, high ionization energy implies that very few neon ions are produced. In addition, these ions have a relatively low mass and therefore cause minimal damage to the workpiece. Therefore, neon can be used to improve the beam composition with almost no adverse effects.

因此，可通過使用三種來源氣體來產生射束雜質減少且摻雜劑純度增加的離子束。第一來源氣體或進料氣體可為含有摻雜劑及氟兩者的物質，例如BF3或B2F4。第二來源氣體可為含有氫以及矽或鍺中的任一者的物質，例如矽烷(SiH4)或鍺烷(GeH4)。第三來源氣體可為氬、氖或另一惰性氣體。這三種來源氣體同時地或依序地引入至離子源100的腔室105中，所述三種 源氣體於腔室105中離子化。所述離子源可使用由射頻天線120產生的射頻能量。在另一實施例中，所述離子源可使用旁熱式陰極以利用電子的熱離子發射。藉由離子源也可使用對氣體進行離子化的其他方法。當來自所述三種來源氣體的離子植入工件160時，來自所述三種來源氣體的所述離子被引向工件160。如之前所述，可能不對這些離子進行質量分析，意味著所有的經提取離子均植入工件160中。 Therefore, an ion beam with reduced beam impurities and increased dopant purity can be generated by using three source gases. The first source gas or feed gas may be a substance containing both dopants and fluorine, such as BF 3 or B 2 F 4 . The second source gas may be a substance containing hydrogen and any one of silicon or germanium, such as silane (SiH 4 ) or germane (GeH 4 ). The third source gas can be argon, neon or another inert gas. These three source gases are simultaneously or sequentially introduced into the chamber 105 of the ion source 100, and the three source gases are ionized in the chamber 105. The ion source may use radio frequency energy generated by the radio frequency antenna 120. In another embodiment, the ion source may use an indirectly heated cathode to utilize thermionic emission of electrons. Other methods of ionizing gas can also be used by the ion source. When the ions from the three source gases are implanted into the workpiece 160, the ions from the three source gases are guided to the workpiece 160. As mentioned before, mass analysis of these ions may not be performed, which means that all the extracted ions are implanted in the workpiece 160.

在另一實例中，第二來源氣體可包含具有相反導電性的摻雜劑。舉例而言，第一來源氣體或進料氣體可為含有硼及氟兩者的物質，例如BF3或B2F4。第二來源氣體可為含有氫及V族元素的物質，例如磷、氮或砷。 In another example, the second source gas may include a dopant having opposite conductivity. For example, the first source gas or feed gas may be a substance containing both boron and fluorine, such as BF 3 or B 2 F 4 . The second source gas may be a substance containing hydrogen and group V elements, such as phosphorus, nitrogen, or arsenic.

儘管圖2A至圖2B以及圖4A至圖4B繪示出當使用硼作為第一來源氣體中摻雜劑時的結果，但本發明並非僅限於此實施例。可使用其他摻雜劑，例如鎵、磷、砷或其他3族及5族元素。 Although FIGS. 2A to 2B and FIGS. 4A to 4B illustrate the results when boron is used as the dopant in the first source gas, the present invention is not limited to this embodiment. Other dopants may be used, such as gallium, phosphorus, arsenic, or other group 3 and group 5 elements.

以上公開內容論述了第三來源氣體為氬時可以介於約19%至約48%的量而引入以及第三來源氣體為氖時可以介於約20%至90%的量而引入。然而，本發明並非僅限於此範圍。在某些實施例中，第三來源氣體可以介於約15%至約90%的量而引入。在第三來源氣體為氬的其他實施例中，第三來源氣體可以介於約15%至約40%的量而引入。在第三來源氣體為氬的其他實施例中，第三來源氣體可以介於約15%至約50%的量而引入。在第三來源氣體為氖的某些實施例中，第三來源氣體可以介於約20%至約90% 的量而引入。在第三來源氣體為氖的某些實施例中，第三來源氣體可以介於約25%至60%的量而引入。在第三來源氣體為氖的某些實施例中，第三來源氣體可以大於40%(例如介於40%與90%之間)的量而引入。此外，第一來源氣體對第二來源氣體的比率可為約9：1，但也可使用其他比率。第一來源氣體與第二來源氣體的組合流動速率可介於10sccm與20sccm之間。 The above disclosure discusses that when the third source gas is argon, it can be introduced in an amount ranging from about 19% to about 48%, and when the third source gas is neon, it can be introduced in an amount ranging from about 20% to 90%. However, the present invention is not limited to this scope. In some embodiments, the third source gas may be introduced in an amount ranging from about 15% to about 90%. In other embodiments where the third source gas is argon, the third source gas may be introduced in an amount ranging from about 15% to about 40%. In other embodiments where the third source gas is argon, the third source gas may be introduced in an amount ranging from about 15% to about 50%. In certain embodiments where the third source gas is neon, the third source gas may range from about 20% to about 90% The amount is introduced. In some embodiments where the third source gas is neon, the third source gas may be introduced in an amount ranging from about 25% to 60%. In some embodiments where the third source gas is neon, the third source gas may be introduced in an amount greater than 40% (for example, between 40% and 90%). In addition, the ratio of the first source gas to the second source gas may be about 9:1, but other ratios may also be used. The combined flow rate of the first source gas and the second source gas may be between 10 sccm and 20 sccm.

儘管以上說明公開了使用三種來源氣體，但在其他實施例中，可使用兩種來源氣體。舉例而言，在某些實施例中，如上所述，第一來源氣體可為DFn或DmFn的形式，其中D表示摻雜劑(或加工物質)原子，所述摻雜劑(或加工物質)原子可為硼、鎵、磷、砷或另一3族或5族元素。在某些實施例中，不使用第二來源氣體。相反，在離子源100中僅將第一來源氣體與第三來源氣體進行組合。在本實施例中，第一來源氣體的流動速率可介於10sccm與30sccm之間。在第三來源氣體為氬的一個實施例中，第三來源氣體可構成引入至腔室105的15%與40%之間的總氣體。在第三來源氣體為氬的某些實施例中，第三來源氣體可以介於約15%至約30%的量而引入。在第三來源氣體為氬的其他實施例中，第三來源氣體可以介於約15%至約40%的量而引入。在第三來源氣體為氬的其他實施例中，第三來源氣體可以介於約15%至約50%的量而引入。在第三來源氣體為氖的某些實施例中，第三來源氣體可以介於約20%至約90%的量而引入。在第三來源氣體為氖的某些實施例中，第三來源氣體可以介於約25%至60% 的量而引入。在第三來源氣體為氖的某些實施例中，第三來源氣體可以大於40%(例如介於40%與90%之間)的量而引入。 Although the above description discloses the use of three source gases, in other embodiments, two source gases may be used. For example, in certain embodiments, as described above, the first source gas may be in the form of DF n or D m F n , where D represents a dopant (or processing substance) atom, and the dopant ( (Or processing material) atom can be boron, gallium, phosphorus, arsenic or another group 3 or group 5 element. In some embodiments, no second source gas is used. In contrast, in the ion source 100, only the first source gas and the third source gas are combined. In this embodiment, the flow rate of the first source gas may be between 10 sccm and 30 sccm. In an embodiment where the third source gas is argon, the third source gas may constitute between 15% and 40% of the total gas introduced into the chamber 105. In certain embodiments where the third source gas is argon, the third source gas may be introduced in an amount ranging from about 15% to about 30%. In other embodiments where the third source gas is argon, the third source gas may be introduced in an amount ranging from about 15% to about 40%. In other embodiments where the third source gas is argon, the third source gas may be introduced in an amount ranging from about 15% to about 50%. In certain embodiments where the third source gas is neon, the third source gas may be introduced in an amount ranging from about 20% to about 90%. In some embodiments where the third source gas is neon, the third source gas may be introduced in an amount ranging from about 25% to 60%. In some embodiments where the third source gas is neon, the third source gas may be introduced in an amount greater than 40% (for example, between 40% and 90%).

如上所述，例如氬或氖等第三來源氣體與BFx氣體的引入可對所得離子束的組成產生影響。具體而言，硼純度百分比可增加，而F/B比率可減小。換言之，離子束的組成的變化可在不使用第二來源氣體的情況下發生。 Introducing a third source gas and BF x gas or the like as described above, such as argon or neon may affect the composition of the resulting ion beam. Specifically, the boron purity percentage can be increased while the F/B ratio can be decreased. In other words, the change in the composition of the ion beam can occur without using the second source gas.

圖3繪示出另一實施例。在本實施例中，離子源300具有設置於腔室內的腔室分離器390，以有效地將所述腔室分離成第一子腔室305a及第二子腔室305b。第一子腔室305a及第二子腔室305b中的每一者具有各自的孔340a、340b。此外，接地電極350及提取抑制電極330可被修改成具有與孔340a、340b對應的兩個開口。如之前一樣，所述腔室具有介電窗125及設置於介電窗125上的射頻天線120。在本實施例中，第一來源氣體存儲於第一來源氣體容器170中，並經由氣體入口110而引入至第二子腔室305b。第一來源氣體可為以上所述的物質中的任一者。第二來源氣體存儲於第二來源氣體容器171中，並經由第二氣體入口111而引入至第二子腔室305b。第二來源氣體可為以上所述的物質中的任一者。如關於圖1B所述，在某些實施例中，第一來源氣體容器170及第二來源氣體容器171可連接至單一氣體入口。在另一實施例中，在圖1C中所示，第一來源氣體與第二來源氣體可在單一來源氣體容器中進行混合。此外，在某些實施例中，如上所述，不使用第二來源氣體。如上所述，第一來源氣體對第二來源氣體 的比率可為約9：1，但可使用其他比率。第一來源氣體與第二來源氣體的組合流動速率可介於10sccm與20sccm之間。氬可存儲於第三來源氣體容器172中，並經由第三氣體入口112而引入至第一子腔室305a。 Figure 3 illustrates another embodiment. In this embodiment, the ion source 300 has a chamber separator 390 installed in the chamber to effectively separate the chamber into a first sub-chamber 305a and a second sub-chamber 305b. Each of the first sub-chamber 305a and the second sub-chamber 305b has a respective hole 340a, 340b. In addition, the ground electrode 350 and the extraction suppression electrode 330 may be modified to have two openings corresponding to the holes 340a and 340b. As before, the chamber has a dielectric window 125 and a radio frequency antenna 120 disposed on the dielectric window 125. In this embodiment, the first source gas is stored in the first source gas container 170 and introduced into the second sub-chamber 305b via the gas inlet 110. The first source gas can be any of the substances described above. The second source gas is stored in the second source gas container 171 and introduced into the second sub-chamber 305b through the second gas inlet 111. The second source gas can be any of the above-mentioned substances. As described with respect to FIG. 1B, in some embodiments, the first source gas container 170 and the second source gas container 171 may be connected to a single gas inlet. In another embodiment, as shown in FIG. 1C, the first source gas and the second source gas may be mixed in a single source gas container. Furthermore, in some embodiments, as described above, no second source gas is used. As mentioned above, the first source gas versus the second source gas The ratio can be about 9:1, but other ratios can be used. The combined flow rate of the first source gas and the second source gas may be between 10 sccm and 20 sccm. Argon may be stored in the third source gas container 172 and introduced into the first sub-chamber 305a through the third gas inlet 112.

在本實施例中，經由孔340a提取氬離子束380a。同時發生地，經由孔340b提取摻雜劑離子束380b。此摻雜劑離子束380b包含含硼的離子及氟離子以及其他離子物質。 In this embodiment, the argon ion beam 380a is extracted through the hole 340a. Simultaneously, the dopant ion beam 380b is extracted through the hole 340b. The dopant ion beam 380b contains boron-containing ions, fluoride ions, and other ionic substances.

在圖3中，氬離子束380a與摻雜劑離子束380b平行於彼此，以使得其在不同的位置撞擊工件160。在本實施例中，工件沿由箭頭370指示的方向進行掃描。以此種方式，工件160上的每一位置首先由摻雜劑離子束380b植入，並然後藉由氬離子束380a撞擊。如上所述，氬離子束380a可用於自工件160的表面濺射在植入摻雜劑離子束380b期間沉積的沉積層材料。 In FIG. 3, the argon ion beam 380a and the dopant ion beam 380b are parallel to each other so that they strike the workpiece 160 at different positions. In this embodiment, the workpiece is scanned in the direction indicated by arrow 370. In this way, each location on the workpiece 160 is first implanted by the dopant ion beam 380b, and then struck by the argon ion beam 380a. As described above, the argon ion beam 380a can be used to sputter the deposited layer material deposited during implantation of the dopant ion beam 380b from the surface of the workpiece 160.

如上所闡釋，氬植入可自表面沉積層移除使用濕式化學法難以移除的材料。 As explained above, argon implantation can remove materials that are difficult to remove using wet chemical methods from the surface deposition layer.

在另一實施例中，氬離子束380a及摻雜劑離子束380b被導向或集中，以使得其同時撞擊工件160上的位置。在本實施例中，工件160可沿任何方向掃描。 In another embodiment, the argon ion beam 380a and the dopant ion beam 380b are directed or concentrated so that they simultaneously strike a position on the workpiece 160. In this embodiment, the workpiece 160 can be scanned in any direction.

在再一實施例中，所述兩種植入可依序進行，以由摻雜劑離子束380b植入整個工件160。在隨後的時間，氬離子束380a被引向工件160。 In yet another embodiment, the two kinds of implantation may be performed sequentially to implant the entire workpiece 160 by the dopant ion beam 380b. At a subsequent time, the argon ion beam 380a is directed to the workpiece 160.

在本文所述的且與圖3相關聯的實施例中的每一者中， 可執行植入且不進行質量分析，以使得所有經提取的離子撞擊工件。 In each of the embodiments described herein and associated with FIG. 3, Implantation can be performed without mass analysis, so that all the extracted ions hit the workpiece.

儘管使用氬來闡述圖3所繪示的實施例，但可用例如氖等其他氣體來替代氬以達成相同效應是可能的。 Although argon is used to illustrate the embodiment shown in FIG. 3, it is possible to replace argon with other gases such as neon to achieve the same effect.

此外，儘管本文所公開的實施例闡述了使用氬及氖作為第三來源氣體，但本發明並非僅限於此實施例。如上所陳述，也可使用例如氦、氪及氙等其他惰性氣體作為第三來源氣體。作為另一選擇，惰性氣體的組合可用作第三來源氣體。 In addition, although the embodiments disclosed herein describe the use of argon and neon as the third source gas, the present invention is not limited to this embodiment. As stated above, other inert gases such as helium, krypton, and xenon can also be used as the third source gas. Alternatively, a combination of inert gases can be used as the third source gas.

此外，本文所公開的實施例闡述了將例如摻雜劑等加工物質植入工件160中的植入過程。然而，本發明並非僅限於此實施例。舉例而言，可使用本文所述的來源氣體的組合來對工件執行其他過程。舉例而言，也可使用所公開的來源氣體的組合來對工件執行沉積或蝕刻過程。 In addition, the embodiments disclosed herein illustrate the implantation process of implanting processing materials such as dopants into the workpiece 160. However, the present invention is not limited to this embodiment. For example, the combination of source gases described herein can be used to perform other processes on the workpiece. For example, the disclosed combination of source gases can also be used to perform a deposition or etching process on a workpiece.

本發明的範圍不受本文中所闡述的具體實施例的限制。事實上，通過以上的說明及附圖，除本文中所闡述的內容以外，本發明的其他各種實施例及對本發明的其他各種潤飾也將對所屬領域中具通常知識者顯而易見。因此，此類的其他實施例以及潤飾旨在落於本發明的範圍內。此外，儘管於本文中已在用於特定用途的特定環境中的特定實施方式的上下文中闡述了本發明，但所屬領域中具通常知識者將認識到本發明的有用性並非僅限於此，且本發明可在用於任意數目的用途的任意數目的環境中被有益地實施。因此，以下闡述的申請專利範圍應鑒於本文中闡述的 本發明的全部寬度範圍及精神而進行理解。 The scope of the present invention is not limited by the specific embodiments set forth herein. In fact, through the above description and drawings, in addition to the content described in this article, other various embodiments of the present invention and other various modifications to the present invention will also be obvious to those with ordinary knowledge in the field. Therefore, such other embodiments and modifications are intended to fall within the scope of the present invention. In addition, although the present invention has been described herein in the context of a specific embodiment in a specific environment for a specific purpose, those with ordinary knowledge in the art will recognize that the usefulness of the present invention is not limited to this, and The invention can be beneficially implemented in any number of environments for any number of uses. Therefore, the scope of the patent application set out below should be in view of the The full breadth and spirit of the present invention should be understood.

100:離子源 100: ion source

105:腔室 105: Chamber

107:等離子體腔室壁 107: Plasma chamber wall

110:氣體入口 110: gas inlet

111:第二氣體入口 111: second gas inlet

112:第三氣體入口 112: Third gas inlet

120:射頻天線 120: RF antenna

125:介電窗 125: Dielectric window

130:提取抑制電極 130: Extraction suppression electrode

140:孔 140: hole

150:接地電極 150: Ground electrode

160:工件 160: Workpiece

165:工件支撐件 165: Workpiece support

170:第一來源氣體容器 170: First source gas container

171:第二來源氣體容器 171: Second source gas container

172:第三來源氣體容器 172: Third Source Gas Container

180:離子束 180: ion beam

Claims (11)

一種將加工物質植入工件中的方法，包括：在腔室中對包含加工物質及氟的第一來源氣體以及氖提供能量，以在所述腔室中形成第一等離子體，其中所述加工物質包括硼、鎵、磷或砷；以及自所述第一等離子體提取離子並將所述離子引向所述工件，其中與不使用氖形成的第二等離子體時的基線相比，自所述第一等離子體提取的純加工物質離子的量占所有含加工物質的離子的百分比增加了至少5%，其中氖構成引入至所述腔室中的總氣體的20%至90%。 A method for implanting processing substances into a workpiece includes: supplying energy to a first source gas containing processing substances and fluorine and neon in a chamber to form a first plasma in the chamber, wherein the processing The substance includes boron, gallium, phosphorus, or arsenic; and extracting ions from the first plasma and directing the ions to the workpiece, wherein compared with the baseline when the second plasma formed without neon is used, the The percentage of the pure processing substance ions extracted by the first plasma in the percentage of all processing substance-containing ions is increased by at least 5%, wherein neon constitutes 20% to 90% of the total gas introduced into the chamber. 如申請專利範圍第1項所述的將加工物質植入工件中的方法，更包括：在所述腔室中對包含氫以及矽與鍺中的至少一者的第二來源氣體提供能量，以自所述第二來源氣體產生所述離子；以及自所述第一等離子體提取自所述第二來源氣體產生的所述離子並將來自所述第二來源氣體的所述離子引向所述工件。 As described in item 1 of the scope of the patent application, the method for implanting a processing substance into a workpiece further includes: providing energy to a second source gas containing hydrogen and at least one of silicon and germanium in the chamber to Generating the ions from the second source gas; and extracting the ions generated from the second source gas from the first plasma and directing the ions from the second source gas to the Artifact. 如申請專利範圍第1項所述的將加工物質植入工件中的方法，其中所述離子被引向所述工件且未進行質量分析。 The method for implanting a processing substance into a workpiece as described in the first item of the scope of patent application, wherein the ions are introduced to the workpiece without mass analysis. 如申請專利範圍第1項所述的將加工物質植入工件中的方法，其中與所述基線相比，自所述第一等離子體提取的所述純加工物質離子的量占所述所有含加工物質的離子的百分比增加了至少10%。 The method for implanting a processing substance into a workpiece as described in the first item of the scope of patent application, wherein compared with the baseline, the amount of the pure processing substance ions extracted from the first plasma accounts for the total amount of The percentage of ions of the processed material has increased by at least 10%. 如申請專利範圍第1項所述的將加工物質植入工件中的方法，其中與所述基線相比，自所述第一等離子體提取的加工物質離子對氟離子的比率減小了至少5%。 The method for implanting a processing substance into a workpiece as described in the first item of the scope of patent application, wherein the ratio of processing substance ions to fluoride ions extracted from the first plasma is reduced by at least 5 compared with the baseline. %. 如申請專利範圍第1項所述的將加工物質植入工件中的方法，其中與所述基線相比，所述純加工物質離子的射束電流增加了至少10%。 The method for implanting a processing substance into a workpiece as described in the first item of the patent application, wherein the beam current of the pure processing substance ion is increased by at least 10% compared with the baseline. 如申請專利範圍第1項所述的將加工物質植入工件中的方法，其中所述第一來源氣體包含BF3或B2F4。 The method for implanting processing substances into the workpiece as described in the first item of the scope of patent application, wherein the first source gas contains BF 3 or B 2 F 4 . 一種將摻雜劑植入工件中的方法，包括：在腔室中對包含摻雜劑及氟的第一來源氣體、包含氫以及鍺與矽中的至少一者的第二來源氣體以及氖供能，以在所述腔室中形成等離子體，其中所述摻雜劑包括硼、鎵、磷或砷；以及使來自所述等離子體的離子朝所述工件加速且未使用質量分析，其中引入的氣體的總體積的20%與90%之間包含氖，且其中自所述等離子體提取的所述離子的組成受氖的引入的影響。 A method of implanting a dopant into a workpiece includes: supplying a first source gas containing dopant and fluorine, a second source gas containing hydrogen and at least one of germanium and silicon, and neon in a chamber It is possible to form a plasma in the chamber, wherein the dopant includes boron, gallium, phosphorus or arsenic; and to accelerate the ions from the plasma toward the workpiece without mass analysis, wherein Between 20% and 90% of the total volume of the gas contains neon, and the composition of the ions extracted from the plasma is affected by the introduction of neon. 如申請專利範圍第8項所述的將摻雜劑植入工件中的方法，其中所述引入的氣體的所述總體積的25%與50%之間包含氖。 The method for implanting a dopant into a workpiece as described in the 8th patent application, wherein between 25% and 50% of the total volume of the introduced gas contains neon. 一種用於加工工件的設備，包括：離子源，具有由腔室壁界定的腔室，其中所述離子源在所述腔室中產生第一等離子體； 第一來源氣體容器，含有加工物質及氟，與所述腔室連通，其中所述加工物質包括硼、鎵、磷或砷；第二來源氣體容器，含有氫以及矽與鍺中的至少一者，與所述腔室連通；第三來源氣體容器，含有氖，與所述腔室連通；以及用以保持所述工件的工件支撐件，其中與不使用氖形成的第二等離子體時的基線相比，所述用於加工工件的設備以足以使自所述第一等離子體提取的純加工物質離子的量占所有含加工物質的離子的百分比增加至少5%的量，將氖引入至所述腔室中，其中引入至所述腔室的氣體的總量的20%至90%包含氖。 An apparatus for processing a workpiece, comprising: an ion source having a chamber defined by a chamber wall, wherein the ion source generates a first plasma in the chamber; The first source gas container contains processing substance and fluorine, and is connected to the chamber, wherein the processing substance includes boron, gallium, phosphorus or arsenic; the second source gas container contains hydrogen and at least one of silicon and germanium , Communicating with the chamber; a third source gas container, containing neon, communicating with the chamber; and a workpiece support for holding the workpiece, which is compared with the baseline when the second plasma formed by neon is not used In comparison, the equipment for processing the workpiece is sufficient to increase the percentage of the pure processing substance ions extracted from the first plasma to the percentage of all processing substance-containing ions by at least 5%, and introduce neon into the workpiece. In the chamber, 20% to 90% of the total amount of gas introduced into the chamber contains neon. 如申請專利範圍第10項所述的用於加工工件的設備，其中來自所述第一等離子體的離子被引向所述工件且未進行質量分析。 The apparatus for processing a workpiece as described in claim 10, wherein the ions from the first plasma are introduced to the workpiece without mass analysis.
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