SG10201608964TA - Cleaning agent for semiconductor substrates and method for processing semiconductor substrate surface - Google Patents
Cleaning agent for semiconductor substrates and method for processing semiconductor substrate surfaceInfo
- Publication number
- SG10201608964TA SG10201608964TA SG10201608964TA SG10201608964TA SG10201608964TA SG 10201608964T A SG10201608964T A SG 10201608964TA SG 10201608964T A SG10201608964T A SG 10201608964TA SG 10201608964T A SG10201608964T A SG 10201608964TA SG 10201608964T A SG10201608964T A SG 10201608964TA
- Authority
- SG
- Singapore
- Prior art keywords
- substrate surface
- cleaning agent
- semiconductor substrate
- processing
- semiconductor substrates
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 2
- 239000000758 substrate Substances 0.000 title 2
- 239000012459 cleaning agent Substances 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3218—Alkanolamines or alkanolimines
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/36—Organic compounds containing phosphorus
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
- H01L21/02074—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a planarization of conductive layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
- H01L21/31055—Planarisation of the insulating layers involving a dielectric removal step the removal being a chemical etching step, e.g. dry etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/7684—Smoothing; Planarisation
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Wood Science & Technology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- General Chemical & Material Sciences (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Detergent Compositions (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012103921 | 2012-04-27 |
Publications (1)
Publication Number | Publication Date |
---|---|
SG10201608964TA true SG10201608964TA (en) | 2016-12-29 |
Family
ID=49483316
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10201608964TA SG10201608964TA (en) | 2012-04-27 | 2013-04-26 | Cleaning agent for semiconductor substrates and method for processing semiconductor substrate surface |
SG11201406961PA SG11201406961PA (en) | 2012-04-27 | 2013-04-26 | Cleaning agent for semiconductor substrates and method for processing semiconductor substrate surface |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201406961PA SG11201406961PA (en) | 2012-04-27 | 2013-04-26 | Cleaning agent for semiconductor substrates and method for processing semiconductor substrate surface |
Country Status (8)
Country | Link |
---|---|
US (1) | US9803161B2 (en) |
EP (1) | EP2843689A4 (en) |
JP (1) | JP6128118B2 (en) |
KR (1) | KR101966635B1 (en) |
CN (1) | CN104254906B (en) |
SG (2) | SG10201608964TA (en) |
TW (1) | TWI589691B (en) |
WO (1) | WO2013162020A1 (en) |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015189829A (en) * | 2014-03-27 | 2015-11-02 | 株式会社フジミインコーポレーテッド | polishing composition |
JP6373029B2 (en) * | 2014-03-27 | 2018-08-15 | 株式会社フジミインコーポレーテッド | Polishing composition |
JP6436638B2 (en) * | 2014-03-27 | 2018-12-12 | 株式会社フジミインコーポレーテッド | Polishing composition |
JP6343160B2 (en) * | 2014-03-28 | 2018-06-13 | 株式会社フジミインコーポレーテッド | Polishing composition |
KR102360224B1 (en) * | 2015-02-16 | 2022-03-14 | 삼성디스플레이 주식회사 | Cleaning composition |
US10507563B2 (en) | 2015-04-22 | 2019-12-17 | Jsr Corporation | Treatment composition for chemical mechanical polishing, chemical mechanical polishing method, and cleaning method |
KR101654900B1 (en) * | 2016-02-04 | 2016-09-07 | 주식회사 한국루베 | Decontaminant composition |
US10954479B2 (en) | 2016-07-26 | 2021-03-23 | Fujimi Incorporated | Composition for surface treatment and surface treatment method using the same |
CN106283092B (en) * | 2016-08-05 | 2018-06-19 | 宁波金特信钢铁科技有限公司 | A kind of preparation method of no amino fluoride salt electric substrate cleaning combination |
JP6791680B2 (en) | 2016-08-09 | 2020-11-25 | 株式会社フジミインコーポレーテッド | Surface treatment composition and cleaning method using it |
JP6697362B2 (en) * | 2016-09-23 | 2020-05-20 | 株式会社フジミインコーポレーテッド | Surface treatment composition, surface treatment method using the same, and method for manufacturing semiconductor substrate |
KR102434647B1 (en) * | 2017-01-17 | 2022-08-22 | 주식회사 다이셀 | semiconductor substrate cleaner |
US11203731B2 (en) | 2017-03-08 | 2021-12-21 | Fujimi Incorporated | Composition for surface treatment and method of producing the same, surface treatment method, and method of producing semiconductor substrate |
KR102460770B1 (en) | 2017-03-17 | 2022-10-28 | 미쯔비시 케미컬 주식회사 | A cleaning composition for a substrate for a semiconductor device, a method for cleaning a substrate for a semiconductor device, a method for manufacturing a substrate for a semiconductor device, and a substrate for a semiconductor device |
JP6849564B2 (en) | 2017-09-19 | 2021-03-24 | 株式会社フジミインコーポレーテッド | Surface treatment composition and surface treatment method using the same |
JP7028592B2 (en) | 2017-09-19 | 2022-03-02 | 株式会社フジミインコーポレーテッド | A surface treatment composition, a method for producing a surface treatment composition, a surface treatment method, and a method for producing a semiconductor substrate. |
US11060051B2 (en) * | 2018-10-12 | 2021-07-13 | Fujimi Incorporated | Composition for rinsing or cleaning a surface with ceria particles adhered |
CN110394694A (en) * | 2019-07-26 | 2019-11-01 | 浙江天马轴承集团有限公司 | A kind of plasma point discharge flash removed processing method |
WO2021131453A1 (en) * | 2019-12-26 | 2021-07-01 | 富士フイルムエレクトロニクスマテリアルズ株式会社 | Cleaning liquid and cleaning method |
JPWO2021210308A1 (en) * | 2020-04-16 | 2021-10-21 | ||
CN113862088B (en) * | 2021-10-27 | 2023-11-10 | 福建省佑达环保材料有限公司 | Mask cleaning agent for OLED |
WO2023182142A1 (en) * | 2022-03-25 | 2023-09-28 | 富士フイルム株式会社 | Composition, semiconductor-element manufacturing method, and semiconductor-substrate washing method |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6410494B2 (en) | 1996-06-05 | 2002-06-25 | Wako Pure Chemical Industries, Ltd. | Cleaning agent |
JP3219020B2 (en) | 1996-06-05 | 2001-10-15 | 和光純薬工業株式会社 | Cleaning agent |
TW416987B (en) | 1996-06-05 | 2001-01-01 | Wako Pure Chem Ind Ltd | A composition for cleaning the semiconductor substrate surface |
JPH1140526A (en) * | 1997-07-22 | 1999-02-12 | Hitachi Ltd | Wiring formation method and manufacture of semiconductor device |
US6395693B1 (en) * | 1999-09-27 | 2002-05-28 | Cabot Microelectronics Corporation | Cleaning solution for semiconductor surfaces following chemical-mechanical polishing |
CN1872976A (en) | 2000-03-21 | 2006-12-06 | 和光纯药工业株式会社 | Semiconductor wafer cleaning agent and cleaning method |
JP2002299300A (en) * | 2001-03-30 | 2002-10-11 | Kaijo Corp | Substrate treatment method |
JP2005101479A (en) * | 2002-11-08 | 2005-04-14 | Sumitomo Chemical Co Ltd | Cleaning liquid for semiconductor substrate |
KR100974034B1 (en) | 2002-11-08 | 2010-08-04 | 와코 쥰야꾸 고교 가부시키가이샤 | Cleaning composition and method of cleaning therewith |
TWI362415B (en) * | 2003-10-27 | 2012-04-21 | Wako Pure Chem Ind Ltd | Novel detergent and method for cleaning |
KR100795364B1 (en) * | 2004-02-10 | 2008-01-17 | 삼성전자주식회사 | Composition for cleaning a semiconductor substrate, method of cleaning and method for manufacturing a conductive structure using the same |
PL1720966T3 (en) * | 2004-03-01 | 2011-06-30 | Avantor Performance Mat Inc | Nanoelectronic and microelectronic cleaning compositions |
JPWO2006129538A1 (en) * | 2005-06-01 | 2008-12-25 | 日産化学工業株式会社 | Semiconductor wafer cleaning composition containing phosphonic acid and cleaning method |
JP2008181955A (en) * | 2007-01-23 | 2008-08-07 | Fujifilm Corp | Polishing liquid for metal and polishing method using the same |
JP5121273B2 (en) * | 2007-03-29 | 2013-01-16 | 富士フイルム株式会社 | Polishing liquid for metal and polishing method |
JP2009194049A (en) * | 2008-02-13 | 2009-08-27 | Sanyo Chem Ind Ltd | Detergent for copper wire semiconductor |
JP2009239206A (en) * | 2008-03-28 | 2009-10-15 | Sanyo Chem Ind Ltd | Cleaning agent for copper wiring semiconductor |
JP2010258014A (en) * | 2009-04-21 | 2010-11-11 | Jsr Corp | Composition for cleaning, and cleaning method |
US8148310B2 (en) | 2009-10-24 | 2012-04-03 | Wai Mun Lee | Composition and method for cleaning semiconductor substrates comprising an alkyl diphosphonic acid |
JP5858597B2 (en) * | 2010-01-29 | 2016-02-10 | アドバンスド テクノロジー マテリアルズ,インコーポレイテッド | Cleaning agent for tungsten wiring semiconductor |
SG10201500387RA (en) * | 2010-01-29 | 2015-04-29 | Entegris Inc | Cleaning agent for semiconductor provided with metal wiring |
JP5508158B2 (en) * | 2010-06-22 | 2014-05-28 | 富士フイルム株式会社 | Cleaning composition, cleaning method, and manufacturing method of semiconductor device |
-
2013
- 2013-04-26 TW TW102114989A patent/TWI589691B/en active
- 2013-04-26 KR KR1020147029843A patent/KR101966635B1/en active IP Right Grant
- 2013-04-26 US US14/397,364 patent/US9803161B2/en active Active
- 2013-04-26 SG SG10201608964TA patent/SG10201608964TA/en unknown
- 2013-04-26 EP EP20130780549 patent/EP2843689A4/en not_active Withdrawn
- 2013-04-26 SG SG11201406961PA patent/SG11201406961PA/en unknown
- 2013-04-26 CN CN201380022014.7A patent/CN104254906B/en active Active
- 2013-04-26 WO PCT/JP2013/062464 patent/WO2013162020A1/en active Application Filing
- 2013-04-26 JP JP2014512722A patent/JP6128118B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
TW201402806A (en) | 2014-01-16 |
US9803161B2 (en) | 2017-10-31 |
KR101966635B1 (en) | 2019-08-27 |
TWI589691B (en) | 2017-07-01 |
JP6128118B2 (en) | 2017-05-17 |
EP2843689A1 (en) | 2015-03-04 |
CN104254906B (en) | 2017-07-21 |
CN104254906A (en) | 2014-12-31 |
SG11201406961PA (en) | 2014-11-27 |
KR20150003217A (en) | 2015-01-08 |
EP2843689A4 (en) | 2015-05-13 |
JPWO2013162020A1 (en) | 2015-12-24 |
US20150140820A1 (en) | 2015-05-21 |
WO2013162020A1 (en) | 2013-10-31 |
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