JPH1140526A - Wiring formation method and manufacture of semiconductor device - Google Patents
Wiring formation method and manufacture of semiconductor deviceInfo
- Publication number
- JPH1140526A JPH1140526A JP19619897A JP19619897A JPH1140526A JP H1140526 A JPH1140526 A JP H1140526A JP 19619897 A JP19619897 A JP 19619897A JP 19619897 A JP19619897 A JP 19619897A JP H1140526 A JPH1140526 A JP H1140526A
- Authority
- JP
- Japan
- Prior art keywords
- film
- polishing
- liquid
- corrosion
- conductive film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、半導体装置等の製
造の際の微細加工に適した化学機械研磨法を用いた配線
形成方法及びその方法を用いた半導体装置の製造方法に
関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for forming a wiring using a chemical mechanical polishing method suitable for fine processing in the manufacture of a semiconductor device and the like, and a method for manufacturing a semiconductor device using the method.
【０００２】[0002]
【従来の技術】近年、半導体集積回路（以下、ＬＳＩと
記す）の高集積化、高性能化に伴って新たな微細加工技
術が開発されている。化学機械研磨法（ケミカルメカニ
カルポリッシング、以下、ＣＭＰと略する）もその一つ
であり、ＬＳＩ製造工程、特に多層配線形成工程におけ
る層間絶縁膜の平坦化、金属プラグ形成、埋め込み配線
形成において利用される技術である。この方法は、例え
ば、Ｕ．Ｓ．Ｐ．４９４４８３６において報告されてい
るように、特定の研磨液に対して異なる研磨速度を持つ
２つの部材を有する基板を研磨布に接触させ、さらに基
板を研磨液と研磨剤粒子を含むスラリーに接触させ化学
的、機械的に研磨するものである。2. Description of the Related Art In recent years, a new fine processing technology has been developed in accordance with high integration and high performance of a semiconductor integrated circuit (hereinafter, referred to as LSI). A chemical mechanical polishing method (Chemical Mechanical Polishing, hereinafter abbreviated as CMP) is one of them, and is used in the LSI manufacturing process, especially in the flattening of the interlayer insulating film, the formation of metal plugs, and the formation of buried wirings in the multilayer wiring formation process. Technology. This method is described, for example, in US Pat. S. P. As reported in US Pat. No. 4,944,836, a substrate having two members having different polishing rates for a particular polishing liquid is contacted with a polishing cloth, and further the substrate is contacted with a slurry containing the polishing liquid and abrasive particles. This is to polish mechanically and mechanically.
【０００３】一方、ＬＳＩの高速性能化を達成するため
に、配線材料を従来のアルミニウムから低抵抗の銅合金
を利用しようとすることが試みられている。しかし、銅
合金はアルミニウム配線の形成で頻繁に用いられるドラ
イエッチング法による微細加工が困難であるため、絶縁
膜の溝加工後に銅合金薄膜を形成し、溝内に埋め込まれ
た部分以外を上記のＣＭＰにより除去する埋め込み配線
形成法が主に採用されている。なお、この技術に関連す
るものとして、例えば、特開平２−２７８８２２号公報
等が挙げられる。On the other hand, in order to achieve high-speed performance of LSI, attempts have been made to use a low-resistance copper alloy from conventional aluminum as a wiring material. However, since copper alloys are difficult to finely process by dry etching, which is frequently used in the formation of aluminum wiring, a copper alloy thin film is formed after forming a groove in an insulating film, and the above-described portions other than the portion embedded in the groove are formed. A buried wiring forming method for removing by CMP is mainly employed. In addition, as related to this technology, for example, Japanese Patent Application Laid-Open No. 2-278822 is cited.
【０００４】しかし、銅等のメタルのＣＭＰは、主に腐
食性の研磨液を用いるために、ＣＭＰ処理を施したウエ
ハ上に研磨液や研磨砥粒が残存すると研磨面の銅が腐食
したり、凹み（ディシングとも呼ばれる）が発生する。
これを防止するために、研磨液中に銅の防食剤であるＢ
ＴＡ（ベンゾトリアゾール）を添加する方法が特開平８
−６４５９４号公報に公開されている。However, since CMP of metal such as copper mainly uses a corrosive polishing liquid, copper on the polished surface is corroded when polishing liquid or abrasive grains remain on a wafer subjected to CMP processing. Dents (also called dishing) occur.
In order to prevent this, copper anticorrosive B
A method of adding TA (benzotriazole) is disclosed in
-64594.
【０００５】[0005]
【発明が解決しようとする課題】上記特開平８−６４５
９４号公報に記載の従来技術は、銅の腐食を抑制するこ
とができるが、防食剤による強固な保護膜が銅表面に形
成されるために、研磨速度がＢＴＡの添加に依存して大
きく低下するという問題があった。SUMMARY OF THE INVENTION The above-mentioned Japanese Patent Application Laid-Open No. 8-645.
The prior art described in Japanese Patent No. 94 can suppress copper corrosion, but since a strong protective film is formed on the copper surface by an anticorrosive, the polishing rate is greatly reduced depending on the addition of BTA. There was a problem of doing.
【０００６】本発明の第１の目的は、配線を形成する材
料の腐食を抑制し、かつ、高い研磨速度でＣＭＰを行う
配線形成方法を提供することにある。本発明の第２の目
的は、そのような配線形成方法を用いた半導体装置の製
造方法を提供することにある。A first object of the present invention is to provide a wiring forming method for suppressing corrosion of a material forming wiring and performing CMP at a high polishing rate. A second object of the present invention is to provide a method for manufacturing a semiconductor device using such a wiring forming method.
【０００７】[0007]
【課題を解決するための手段】上記第１の目的を達成す
るために、本発明の配線形成方法は、表面に凹凸を有す
る基体上に、銅、銅合金等からなる導体膜を形成し、基
体の凸部上の導体膜をＣＭＰを用いて除去して導体膜を
所望の形状とし、防食性物質を含む水溶液又は非水性液
体を導体膜に接触させるようにしたものである。In order to achieve the first object, a method for forming a wiring according to the present invention comprises forming a conductive film made of copper, a copper alloy, or the like on a substrate having a surface having irregularities, The conductor film on the convex portion of the base is removed by using CMP to form the conductor film into a desired shape, and an aqueous solution or a non-aqueous liquid containing an anticorrosive substance is brought into contact with the conductor film.
【０００８】防食性物質を含む水溶液又は非水性液体の
導体膜への接触は、ＣＭＰ装置が稼働して基体が回転し
ている研磨布に接触している状態で開始してもよく、或
は基体をＣＭＰ装置から取り外した後の洗浄前の段階
で、防食性物質を含む水溶液又は非水性液体中に浸して
もよい。後者の場合は超音波振動又はメガソニック振動
を伴う方が望ましい。ＣＭＰ終了時又はその後の洗浄時
に研磨液が水で希釈されると研磨液の腐食性が非常に強
くなるが、防食液と置換することによってこれを防ぐこ
とができる。[0008] The contact of the aqueous solution or non-aqueous liquid containing the anticorrosive substance with the conductive film may be started in a state where the CMP apparatus is operated and the substrate is in contact with the rotating polishing cloth, or The substrate may be immersed in an aqueous solution or a non-aqueous liquid containing an anticorrosive substance at a stage before cleaning after the substrate is removed from the CMP apparatus. In the latter case, it is more desirable to involve ultrasonic vibration or megasonic vibration. If the polishing liquid is diluted with water at the end of CMP or at the time of subsequent cleaning, the polishing liquid becomes extremely corrosive, but this can be prevented by replacing the polishing liquid with an anticorrosive liquid.
【０００９】非水性液体としてはメタノール、エタノー
ル、イソプロピルアルコール（ＩＰＡ）等のアルコール
類が好ましく、また、非水性液体に防食性物質を含んで
いてもよい。As the non-aqueous liquid, alcohols such as methanol, ethanol and isopropyl alcohol (IPA) are preferable, and the non-aqueous liquid may contain an anticorrosive substance.
【００１０】本発明は、腐食性の高い銅、銅合金に特に
有効であるが、その他導体膜の材質として、タングステ
ン、アルミニウム、チタン、タングステン合金、アルミ
ニウム合金又はチタン合金等が用いられる。The present invention is particularly effective for highly corrosive copper and copper alloys, but other materials such as tungsten, aluminum, titanium, tungsten alloy, aluminum alloy or titanium alloy are used as the material of the conductor film.
【００１１】防食性物質は、ＢＴＡが代表的であるが、
ＴＴＡ（トリルトリアゾール）、ＢＴＡ−ＣＯＯＨ（Ｂ
ＴＡカルボン酸）等のＢＴＡの誘導体、シスチン、ハロ
酢酸、グルコース、ドデシルメルカプタン等でも同様の
効果があり、特に銅、銅合金に対して有効である。The anticorrosive substance is typically BTA,
TTA (tolyltriazole), BTA-COOH (B
BTA derivatives such as TA carboxylic acid), cystine, haloacetic acid, glucose, dodecyl mercaptan and the like have the same effect, and are particularly effective for copper and copper alloys.
【００１２】また、タングステン、タングステン合金に
対しては、Ｎ−ベンゾイル−Ｎ−フェニルヒドロキシル
アミンやその誘導体が有効である。これらについては、
前述の従来技術を記載した公報に説明されている。For tungsten and a tungsten alloy, N-benzoyl-N-phenylhydroxylamine and its derivatives are effective. For these,
The above-mentioned prior art is described in the publication.
【００１３】防食性物質の濃度は、０．００１〜１重量
％の範囲であることが好ましい。これは非水性液体に防
食性物質を含むときも同様である。０．００１重量％未
満では防食効果が顕著ではない。The concentration of the anticorrosive substance is preferably in the range of 0.001 to 1% by weight. This is the same when the non-aqueous liquid contains an anticorrosive substance. If it is less than 0.001% by weight, the anticorrosion effect is not remarkable.
【００１４】また、上記第２の目的を達成するために、
本発明の半導体装置の製造方法は、複数の半導体素子が
形成された半導体基板上に絶縁膜を形成し、さらにその
上に凹凸を有する第２の絶縁膜を形成し、この凹凸を有
する第２の絶縁膜を上記の基体として、上記の配線形成
方法を行うようにしたものである。この方法は、半導体
装置の埋め込み配線や層間絶縁膜のホール中の金属プラ
グの形成等に用いることができる。Further, in order to achieve the second object,
According to the method of manufacturing a semiconductor device of the present invention, an insulating film is formed on a semiconductor substrate on which a plurality of semiconductor elements are formed, and a second insulating film having irregularities is further formed thereon. The above-described wiring forming method is performed by using the insulating film described above as the base. This method can be used, for example, for forming a buried wiring of a semiconductor device or a metal plug in a hole of an interlayer insulating film.
【００１５】[0015]
【発明の実施の形態】以下、本発明の実施の形態を図面
を参照して説明する。 実施例１〜３ 本実施例では銅のＣＭＰの方法について説明する。図１
は本実施例において使用するＣＭＰ装置を示す概略図で
ある。研磨布が貼り付けられた定盤１１の上をウエハ１
４を支持したキャリア１２が回転してＣＭＰを行う構造
になっている。ＣＭＰ中にウエハ１４がはずれないよう
にリテーナリング１３が設けられている。ＣＭＰ中にお
ける研磨荷重は１５０ｇ／ｃｍ2、定盤とキャリアの回
転数はともに３０ｒｐｍである。Embodiments of the present invention will be described below with reference to the drawings. Embodiments 1 to 3 In this embodiment, a method of copper CMP will be described. FIG.
FIG. 2 is a schematic view showing a CMP apparatus used in the present embodiment. The wafer 1 is placed on the surface plate 11 to which the polishing cloth is attached.
4 has a structure in which the carrier 12 which supports 4 rotates and performs CMP. A retainer ring 13 is provided so that the wafer 14 does not come off during the CMP. The polishing load during CMP was 150 g / cm 2 , and the rotation speeds of the platen and the carrier were both 30 rpm.
【００１６】研磨液と研磨砥粒のスラリー（以下、単に
研磨液という）が定盤上に設けられた第１の供給口１５
から研磨布上に約３０ｃｃ／ｍｉｎの速度で滴下されて
ＣＭＰを行う。ＣＭＰが終了した段階で第１の供給口１
５を閉じて研磨液の供給を停止し、定盤１１とキャリア
１２の回転を持続したまま、すぐに第２の供給口１６か
ら防食液（防食性物質の水溶液又はアルコール類等の非
水性液体）を約５００ｃｃ／ｍｉｎの速度で供給する
（第１フラッシングと称する）。第１フラッシングを１
５〜３０秒間行って研磨液を防食液で置換した後、第２
の供給口１６を閉じて第３の供給口１７から純水を約３
０００ｃｃ／ｍｉｎの速度で供給（第２フラッシングと
称する）を１５〜３０秒間行う。その後ウエハを乾燥し
ないように純水中に保管した状態で洗浄工程に移る。A first supply port 15 provided on a surface plate is provided with a slurry of a polishing liquid and abrasive grains (hereinafter simply referred to as a polishing liquid).
Is dropped on the polishing pad at a rate of about 30 cc / min to perform CMP. At the stage when the CMP is completed, the first supply port 1
5, the supply of the polishing liquid is stopped, and while the rotation of the platen 11 and the carrier 12 is maintained, the anticorrosive liquid (an aqueous solution of an anticorrosive substance or a non-aqueous liquid such as alcohol) is immediately supplied from the second supply port 16. ) Is supplied at a rate of about 500 cc / min (referred to as first flushing). 1st flushing 1
After replacing the polishing liquid with an anticorrosive liquid for 5 to 30 seconds, the second
Of the pure water from the third supply port 17 is closed.
Supply (referred to as second flushing) at a speed of 000 cc / min is performed for 15 to 30 seconds. Thereafter, the process proceeds to the cleaning step in a state where the wafer is stored in pure water so as not to be dried.
【００１７】効率的にＣＭＰ工程を進め、研磨液の無駄
をなくし、工程時間を短くする等のために、ＣＭＰを行
う定盤とフラッシングを行う定盤は別であってもよい。
その場合はそれら２つの定盤間をキャリアが数秒で移動
できることが望ましい。また、ＣＭＰ工程後にウエハを
防食液を入れた洗浄槽に浸して研磨液を除去しても同様
の腐食抑制効果がある。The surface plate for performing CMP and the surface plate for performing flashing may be different from each other in order to efficiently advance the CMP process, eliminate waste of the polishing liquid, shorten the process time, and the like.
In that case, it is desirable that the carrier can move between these two surface plates in a few seconds. Further, even if the polishing liquid is removed by immersing the wafer in a cleaning tank containing an anticorrosive liquid after the CMP step, the same corrosion suppressing effect can be obtained.
【００１８】埋め込み配線を形成する試料の研磨前の断
面構造の例を図２（ａ）に示す。シリコン基板２４上に
シリコン窒化膜２３ａを厚さ５００ｎｍ、シリコン酸化
膜２３ｂを厚さ５００ｎｍ成膜し、リソグラフィ工程及
びドライエッチ工程によって深さ５００ｎｍの配線溝パ
ターンを形成した。その上に接着層として厚さ５０ｎｍ
の窒化チタン層２２を成膜した後に、厚さ８００ｎｍの
銅の薄膜２１をスパッタリング法により真空中で連続し
て成膜した。さらに段差被覆性をよくするためにスパッ
タ装置内で４５０度で３０分の熱処理を行った。ＣＭＰ
を行った後、試料は図２（ｂ）に示すような断面構造に
加工される。本実施例においては、埋め込み配線の形成
方法について説明したが、それ以外の用途の銅合金の研
磨方法に関しても同じ原理で行う。FIG. 2A shows an example of a cross-sectional structure of a sample for forming an embedded wiring before polishing. A silicon nitride film 23a having a thickness of 500 nm and a silicon oxide film 23b having a thickness of 500 nm were formed on a silicon substrate 24, and a wiring groove pattern having a depth of 500 nm was formed by a lithography process and a dry etching process. On top of this, a 50 nm thick adhesive layer
After the titanium nitride layer 22 was formed, a copper thin film 21 having a thickness of 800 nm was continuously formed in a vacuum by a sputtering method. In order to further improve step coverage, heat treatment was performed at 450 ° C. for 30 minutes in a sputtering apparatus. CMP
Is performed, the sample is processed into a cross-sectional structure as shown in FIG. In the present embodiment, the method of forming the buried wiring has been described. However, the same principle is applied to the polishing method of the copper alloy for other uses.
【００１９】上記の試料の加工の際、図１に示した第１
の供給口１５から供給される研磨液と第２の供給口１６
から供給される防食液の種類を変えた場合について、図
２（ｂ）に示した銅の薄膜２１の研磨面の腐食状態を比
較して表１に示した。研磨液はアルミナ系研磨液（ロデ
ールニッタ社製ＱＣＴＴ１０１０）に濃度９％の過酸化
水素（Ｈ2Ｏ2）を混合したもの（市販の３０％過酸化水
素水を３０％混合したもの）を用いた。防食液は、イソ
プロピルアルコール、ＢＴＡ水を用いた。また、比較例
として防食液の代わりに第１のフラッシングの液に純水
を用いた場合を表１に示した。さらに従来例として、研
磨液自体にＢＴＡを添加した液を用いてＣＭＰを行い、
純水で第１のフラッシングをした例を加えた。In processing the above sample, the first sample shown in FIG.
Polishing liquid supplied from the supply port 15 and the second supply port 16
Table 1 shows a comparison of the corrosion state of the polished surface of the copper thin film 21 shown in FIG. The polishing liquid used was a mixture of an alumina-based polishing liquid (QCTT1010 manufactured by Rodel Nitta) and hydrogen peroxide (H 2 O 2 ) having a concentration of 9% (a mixture of 30% of a commercially available 30% hydrogen peroxide solution). . As the anticorrosion liquid, isopropyl alcohol and BTA water were used. Table 1 shows a comparative example in which pure water was used as the first flushing liquid instead of the anticorrosive liquid. Further, as a conventional example, CMP is performed using a solution obtained by adding BTA to the polishing solution itself,
An example in which the first flushing was performed with pure water was added.
【００２０】[0020]
【表１】 [Table 1]
【００２１】比較例のように、ＢＴＡ無添加の研磨液で
ＣＭＰを行った後、純水で第１のフラッシングを行うと
腐食が発生した。これに対してＩＰＡ（実施例１）や高
濃度（０．１％）のＢＴＡ水（実施例３）を第１のフラ
ッシングの液として用いると腐食は起こらなかった。ま
た、低濃度（０．０１％）のＢＴＡ水（実施例２）を第
１のフラッシングの液として用いたときは、わずかに腐
食が生じた。一方、従来例のように研磨液にＢＴＡを添
加したものを用いると、第１のフラッシングの液に純水
を用いても腐食は起こらなかったが、研磨速度はかなり
低下した。As in the comparative example, when the first flushing was performed with pure water after the CMP was performed with the polishing liquid without BTA, corrosion occurred. In contrast, when IPA (Example 1) or high-concentration (0.1%) BTA water (Example 3) was used as the first flushing liquid, no corrosion occurred. In addition, when BTA water of low concentration (0.01%) (Example 2) was used as the first flushing liquid, corrosion occurred slightly. On the other hand, when a polishing liquid containing BTA was used as in the conventional example, no corrosion occurred even when pure water was used as the first flushing liquid, but the polishing rate was considerably reduced.
【００２２】この原理を図３を用いて説明する。図３
は、銅を研磨液に浸したときの腐食速度の研磨液濃度依
存性である。研磨液の濃度は純水による希釈で調整し
た。その結果、研磨液濃度３０％未満では、非常に速い
速度で腐食が進行し、例えば、研磨液濃度２０％では腐
食速度が５０ｎｍ／ｍｉｎ程度にもなることが分かる。
従って、研磨後に純水を用いて洗浄しようとすると研磨
液が純水によって希釈されるために、強い腐食作用が現
れて銅表面が腐食される。これに対して、防食剤を加え
た純水やＩＰＡのような液体で一度研磨液をフラッシン
グした後に純水で洗浄すれば、希釈研磨液による腐食を
抑制することができる。This principle will be described with reference to FIG. FIG.
Is the polishing solution concentration dependency of the corrosion rate when copper is immersed in the polishing solution. The concentration of the polishing liquid was adjusted by dilution with pure water. As a result, it can be seen that when the polishing liquid concentration is less than 30%, the corrosion proceeds at a very high speed, and for example, when the polishing liquid concentration is 20%, the corrosion rate becomes about 50 nm / min.
Therefore, if the cleaning is performed using pure water after the polishing, the polishing liquid is diluted with the pure water, so that a strong corrosive action appears and the copper surface is corroded. On the other hand, if the polishing liquid is flushed once with a liquid such as pure water or IPA to which an anticorrosive agent has been added and then washed with pure water, corrosion due to the diluted polishing liquid can be suppressed.
【００２３】実施例２のＩＰＡのようなアルコールでフ
ラッシングを行う場合、研磨液中の酸化剤と水の組成が
変化せずにアルコールと置換されるので、腐食性が増加
しない状態のまま研磨液を除去できる。アルコールにＢ
ＴＡを加えると、研磨面にＢＴＡ被膜が形成されるので
防食性がさらに向上した。When flushing with an alcohol such as IPA in Example 2, the composition of the oxidizing agent and water in the polishing liquid is replaced with alcohol without changing, so that the polishing liquid is kept in a state where the corrosiveness does not increase. Can be removed. B to alcohol
When TA was added, a BTA coating was formed on the polished surface, so that the corrosion resistance was further improved.
【００２４】一方、表１の従来例のように、研磨液にＢ
ＴＡを添加した場合は研磨速度が低下する。図４に研磨
速度と腐食速度のＢＴＡ添加濃度依存性を示した。ＢＴ
Ａのわずか０．０１％の添加で腐食速度が１０ｎｍ／ｍ
ｉｎから１ｎｍ／ｍｉｎまで抑制できるが、研磨速度が
半分まで低下している。０．１％の添加では腐食速度が
ほとんど０ｎｍ／ｍｉｎであるが、研磨速度も約１０分
の１に低下する。すなわち防食性を高めるためにＢＴＡ
を多量に研磨液に添加することはできない。これに対し
て実施例３のように、第１のフラッシング液に０．１％
のＢＴＡを添加すれば、研磨速度を低下させることな
く、従来例と同等か又はそれ以上に防食性を高めること
が可能である。On the other hand, as shown in the conventional example of Table 1, B was added to the polishing liquid.
When TA is added, the polishing rate decreases. FIG. 4 shows the dependency of the polishing rate and the corrosion rate on the BTA addition concentration. BT
Corrosion rate is 10 nm / m by adding only 0.01% of A
Although it can be suppressed from in to 1 nm / min, the polishing rate is reduced by half. With 0.1% addition, the corrosion rate is almost 0 nm / min, but the polishing rate is also reduced to about 1/10. That is, in order to improve the anticorrosion property, BTA
Cannot be added to the polishing liquid in a large amount. On the other hand, as in Example 3, the first flushing liquid contained 0.1%
If BTA is added, it is possible to increase the anticorrosion property to be equal to or higher than the conventional example without lowering the polishing rate.
【００２５】なお、銅の代わりに銅合金を用いても上記
と同様な効果が得られた。また、ＢＴＡの代わりにＴＴ
ＡやＢＴＡ−ＣＯＯＨ等のＢＴＡ誘導体を用いても略同
様の結果が得られた。The same effect as described above was obtained by using a copper alloy instead of copper. Also, TT instead of BTA
Almost the same results were obtained using BTA derivatives such as A and BTA-COOH.
【００２６】このようにフラッシング液に防食液又はア
ルコール等の非水系の液体を用いて研磨液と置換するこ
とにより、高い研磨速度が得られ、かつ、防食性を高め
ることができる。By replacing the polishing liquid by using a non-aqueous liquid such as an anticorrosive liquid or alcohol as the flushing liquid, a high polishing rate can be obtained and the anticorrosion property can be enhanced.
【００２７】実施例４ 上記実施例に用いた銅の薄膜に代えて、タングステン、
アルミニウム、チタン又はこれらの合金を用いて、上記
と同様な検討を行った。金属の種類により研磨速度や腐
食速度は異なるが、いずれも高い研磨速度が得られ、か
つ、防食性を高めることができる。Embodiment 4 Instead of the copper thin film used in the above embodiment, tungsten,
The same study as above was conducted using aluminum, titanium or their alloys. Although the polishing rate and the corrosion rate differ depending on the type of metal, a high polishing rate can be obtained and the corrosion resistance can be enhanced.
【００２８】実施例５ 半導体基板上に、通常の方法により複数のＭＯＳトラン
ジスタ等の半導体素子を形成し、これらの半導体素子上
に層間絶縁膜を形成した。この層間絶縁膜の所望の位
置、例えば、ソース及びドレインの各電極上にホールを
形成し、タングステンの化学気相成長法によりホールに
タングステンプラグを埋込み、表面を研磨して平坦化し
た。Example 5 A plurality of semiconductor elements such as MOS transistors were formed on a semiconductor substrate by an ordinary method, and an interlayer insulating film was formed on these semiconductor elements. A hole was formed at a desired position of the interlayer insulating film, for example, on each of the source and drain electrodes, a tungsten plug was buried in the hole by a chemical vapor deposition method of tungsten, and the surface was polished and flattened.
【００２９】この上に実施例１と同様にして、ＣＭＰを
行ったところ、高い研磨速度で、防食性の高い銅の配線
が形成された。銅の他に銅合金やタングステン、アルミ
ニウム、チタン又はこれらの合金を用いても同様に高い
研磨速度で、防食性の高い配線が形成された。When CMP was performed thereon in the same manner as in Example 1, a copper wiring having a high anticorrosive property was formed at a high polishing rate. Even when a copper alloy, tungsten, aluminum, titanium or an alloy thereof was used in addition to copper, a wiring having a high anticorrosion property was formed at a similarly high polishing rate.
【００３０】[0030]
【発明の効果】防食性物質を含む水溶液又はアルコール
類のような非水性液体を用いて研磨液を除去する方法
は、優れた腐食抑制効果があり、かつ、研磨液に防食剤
を添加する方法よりも高い研磨速度が得られる。The method of removing the polishing liquid using an aqueous solution containing an anticorrosive substance or a non-aqueous liquid such as alcohols has an excellent corrosion inhibiting effect and a method of adding an anticorrosive to the polishing liquid. Higher polishing rate can be obtained.
【図１】本発明を実施するための化学機械研磨装置の模
式図。FIG. 1 is a schematic view of a chemical mechanical polishing apparatus for carrying out the present invention.
【図２】ＣＭＰ前の試料の断面図とＣＭＰ後の試料の断
面図。FIG. 2 is a cross-sectional view of a sample before CMP and a cross-sectional view of a sample after CMP.
【図３】腐食速度の研磨液濃度依存性を示す図。FIG. 3 is a graph showing the dependency of the corrosion rate on the polishing solution concentration.
【図４】研磨速度及び腐食速度のＢＴＡ濃度依存性を示
す図。FIG. 4 is a view showing the BTA concentration dependence of a polishing rate and a corrosion rate.
１１…定盤 １２…キャリア １３…リテ−ナリング １４…ウエハ １５…第１の供給口 １６…第２の供給口 １７…第３の供給口 ２１…銅の薄膜 ２２…窒化チタン層 ２３ａ…シリコン窒化膜 ２３ｂ…シリコン酸化膜 ２４…シリコン基板 DESCRIPTION OF SYMBOLS 11 ... Surface plate 12 ... Carrier 13 ... Retaining ring 14 ... Wafer 15 ... 1st supply port 16 ... 2nd supply port 17 ... 3rd supply port 21 ... Copper thin film 22 ... Titanium nitride layer 23a ... Silicon nitride Film 23b: silicon oxide film 24: silicon substrate
フロントページの続き (72)発明者 武田 健一 東京都国分寺市東恋ケ窪一丁目280番地 株式会社日立製作所中央研究所内 (72)発明者 日野出 憲治 東京都国分寺市東恋ケ窪一丁目280番地 株式会社日立製作所中央研究所内Continued on the front page (72) Inventor Kenichi Takeda 1-280 Higashi Koikekubo, Kokubunji-shi, Tokyo Inside the Hitachi, Ltd. Central Research Laboratory (72) Inventor Kenji Hino 1-280 Higashi Koikekubo, Kokubunji-shi, Tokyo Hitachi, Ltd. Inside
Claims (9)
ステン、アルミニウム、チタン又はこれらを含む合金か
らなる導体膜を形成し、上記基体の凸部上の上記導体膜
を化学機械研磨法を用いて除去して上記導体膜を所望の
形状とし、防食性物質を含む水溶液又は非水性液体を上
記所望の形状の導体膜に接触させることを特徴とする配
線形成方法。1. A conductive film made of copper, tungsten, aluminum, titanium or an alloy containing these is formed on a substrate having irregularities on the surface, and the conductive film on the convex portion of the substrate is subjected to a chemical mechanical polishing method. And forming the conductive film into a desired shape by removing the conductive film by using an aqueous solution or a non-aqueous liquid containing an anticorrosive substance.
体の上記導体膜への接触は、上記基体が研磨布に接触し
て化学機械研磨されている状態で開始されることを特徴
とする請求項１記載の配線形成方法。2. The method according to claim 1, wherein the contact of the aqueous solution or the non-aqueous liquid containing the anticorrosive substance with the conductor film is started in a state where the substrate is in contact with a polishing cloth and is chemically and mechanically polished. The method for forming a wiring according to claim 1.
体の上記導体膜への接触は、上記化学機械研磨が終了し
た後に、上記基体を上記防食性物質を含む水溶液又は非
水性液体中に浸すことにより行われることを特徴とする
請求項１記載の配線形成方法。3. The method according to claim 1, wherein the aqueous solution or the non-aqueous liquid containing the anticorrosive substance is brought into contact with the conductor film after the chemical mechanical polishing is completed. The method according to claim 1, wherein the method is performed by immersion.
びその誘導体からなる群から選ばれた少なくとも１種の
物質であることを特徴とする請求項１から３のいずれか
一に記載の配線形成方法。4. The method according to claim 1, wherein the anticorrosive substance is at least one substance selected from the group consisting of benzotriazole and its derivatives. .
重量％の範囲であることを特徴とする請求項１から４の
いずれか一に記載の配線形成方法。5. The concentration of said anticorrosive substance is 0.001-1.
5. The wiring forming method according to claim 1, wherein the amount is in a range of% by weight.
とを特徴とする請求項１から３のいずれか一に記載の配
線形成方法。6. The method according to claim 1, wherein the non-aqueous liquid is an alcohol.
ールであることを特徴とする請求項６記載の配線形成方
法。7. The method according to claim 6, wherein the alcohol is isopropyl alcohol.
を特徴とする請求項６又は７記載の配線形成方法。8. The wiring forming method according to claim 6, wherein said non-aqueous liquid contains an anticorrosive substance.
し、該半導体素子上に絶縁膜を形成し、該絶縁膜上に凹
凸を有する第２の絶縁膜を形成し、該凹凸を有する第２
の絶縁膜を上記基体として、請求項１から８のいずれか
一に記載の配線形成方法を行うことを特徴とする半導体
装置の製造方法。9. A semiconductor device comprising: a plurality of semiconductor elements formed on a semiconductor substrate; an insulating film formed on the semiconductor element; a second insulating film having irregularities formed on the insulating film; Second
9. A method for manufacturing a semiconductor device, comprising performing the wiring forming method according to claim 1 using the insulating film as the base.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19619897A JPH1140526A (en) | 1997-07-22 | 1997-07-22 | Wiring formation method and manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19619897A JPH1140526A (en) | 1997-07-22 | 1997-07-22 | Wiring formation method and manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH1140526A true JPH1140526A (en) | 1999-02-12 |
Family
ID=16353832
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19619897A Pending JPH1140526A (en) | 1997-07-22 | 1997-07-22 | Wiring formation method and manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH1140526A (en) |
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