SG10201600407SA - Semiconductor device and manufacturing method of the same - Google Patents
Semiconductor device and manufacturing method of the sameInfo
- Publication number
- SG10201600407SA SG10201600407SA SG10201600407SA SG10201600407SA SG10201600407SA SG 10201600407S A SG10201600407S A SG 10201600407SA SG 10201600407S A SG10201600407S A SG 10201600407SA SG 10201600407S A SG10201600407S A SG 10201600407SA SG 10201600407S A SG10201600407S A SG 10201600407SA
- Authority
- SG
- Singapore
- Prior art keywords
- manufacturing
- same
- semiconductor device
- semiconductor
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
- H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
- H01L29/0852—Source or drain regions of field-effect devices of field-effect transistors with insulated gate of DMOS transistors
- H01L29/0873—Drain regions
- H01L29/0882—Disposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/161—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table including two or more of the elements provided for in group H01L29/16, e.g. alloys
- H01L29/165—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table including two or more of the elements provided for in group H01L29/16, e.g. alloys in different semiconductor regions, e.g. heterojunctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
- H01L29/66068—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
- H01L29/7824—Lateral DMOS transistors, i.e. LDMOS transistors with a substrate comprising an insulating layer, e.g. SOI-LDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0692—Surface layout
- H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7809—Vertical DMOS transistors, i.e. VDMOS transistors having both source and drain contacts on the same surface, i.e. Up-Drain VDMOS transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Thin Film Transistor (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
- Junction Field-Effect Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009037717 | 2009-02-20 |
Publications (1)
Publication Number | Publication Date |
---|---|
SG10201600407SA true SG10201600407SA (en) | 2016-02-26 |
Family
ID=42621710
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10201600407SA SG10201600407SA (en) | 2009-02-20 | 2010-02-04 | Semiconductor device and manufacturing method of the same |
SG2012061206A SG183740A1 (en) | 2009-02-20 | 2010-02-04 | Semiconductor device and manufacturing method of the same |
SG201000795-3A SG164324A1 (en) | 2009-02-20 | 2010-02-04 | Semiconductor device and manufacturing method of the same |
Family Applications After (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG2012061206A SG183740A1 (en) | 2009-02-20 | 2010-02-04 | Semiconductor device and manufacturing method of the same |
SG201000795-3A SG164324A1 (en) | 2009-02-20 | 2010-02-04 | Semiconductor device and manufacturing method of the same |
Country Status (4)
Country | Link |
---|---|
US (2) | US8368083B2 (en) |
JP (1) | JP2010219515A (en) |
CN (1) | CN101814526B (en) |
SG (3) | SG10201600407SA (en) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI512997B (en) | 2009-09-24 | 2015-12-11 | Semiconductor Energy Lab | Semiconductor device, power circuit, and manufacturing method of semiconductor device |
JP2013030618A (en) | 2011-07-28 | 2013-02-07 | Rohm Co Ltd | Semiconductor device |
JP5884585B2 (en) * | 2012-03-21 | 2016-03-15 | 住友電気工業株式会社 | Method for manufacturing silicon carbide semiconductor device |
US8653600B2 (en) * | 2012-06-01 | 2014-02-18 | Power Integrations, Inc. | High-voltage monolithic schottky device structure |
JP6136573B2 (en) * | 2013-05-27 | 2017-05-31 | 富士通株式会社 | Semiconductor device and manufacturing method of semiconductor device |
US10325988B2 (en) | 2013-12-13 | 2019-06-18 | Power Integrations, Inc. | Vertical transistor device structure with cylindrically-shaped field plates |
US9543396B2 (en) | 2013-12-13 | 2017-01-10 | Power Integrations, Inc. | Vertical transistor device structure with cylindrically-shaped regions |
US10403509B2 (en) * | 2014-04-04 | 2019-09-03 | The Government Of The United States Of America, As Represented By The Secretary Of The Navy | Basal plane dislocation elimination in 4H—SiC by pulsed rapid thermal annealing |
JP2020092282A (en) * | 2020-02-25 | 2020-06-11 | ローム株式会社 | Schottky barrier diode |
CN116741639A (en) * | 2023-06-20 | 2023-09-12 | 中国科学院上海微***与信息技术研究所 | Method for manufacturing semiconductor device and semiconductor device |
CN116646401B (en) * | 2023-07-19 | 2024-01-23 | 成都蓉矽半导体有限公司 | Silicon carbide heterojunction cascode MOSFET device |
CN117727838B (en) * | 2024-02-07 | 2024-05-10 | 晶科能源(海宁)有限公司 | Solar cell, preparation method thereof and photovoltaic module |
Family Cites Families (31)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6233422A (en) * | 1985-08-06 | 1987-02-13 | Fujitsu Ltd | Epitaxial growth method of silicon carbide |
JPS62204519A (en) * | 1986-03-04 | 1987-09-09 | Agency Of Ind Science & Technol | Substrate structure for silicon carbide device |
JP3061406B2 (en) * | 1990-09-28 | 2000-07-10 | 株式会社東芝 | Semiconductor device |
JP2979964B2 (en) * | 1994-07-25 | 1999-11-22 | 株式会社日立製作所 | Semiconductor device and inverter device using the same |
JPH08213607A (en) * | 1995-02-08 | 1996-08-20 | Ngk Insulators Ltd | Semiconductor device and its manufacturing method |
US5510281A (en) * | 1995-03-20 | 1996-04-23 | General Electric Company | Method of fabricating a self-aligned DMOS transistor device using SiC and spacers |
JPH08274108A (en) * | 1995-03-31 | 1996-10-18 | Toshiba Corp | Semiconductor device and its manufacture |
US5877515A (en) * | 1995-10-10 | 1999-03-02 | International Rectifier Corporation | SiC semiconductor device |
JP3206727B2 (en) * | 1997-02-20 | 2001-09-10 | 富士電機株式会社 | Silicon carbide vertical MOSFET and method of manufacturing the same |
DE60040812D1 (en) * | 1999-03-15 | 2008-12-24 | Matsushita Electric Ind Co Ltd | Manufacturing method for a bipolar transistor and a MISFET semiconductor device |
JP2000349282A (en) * | 1999-06-02 | 2000-12-15 | Fuji Electric Co Ltd | P-channel insulated gate bipolar transistor |
JP4175750B2 (en) * | 1999-10-27 | 2008-11-05 | 株式会社東芝 | Insulated gate semiconductor device |
WO2002043157A1 (en) * | 2000-11-21 | 2002-05-30 | Matsushita Electric Industrial Co.,Ltd. | Semiconductor device and its manufacturing method |
JP5011611B2 (en) * | 2001-06-12 | 2012-08-29 | 富士電機株式会社 | Semiconductor device |
JP2003224428A (en) | 2002-01-29 | 2003-08-08 | Kenwood Corp | Amplifier device |
US20040227197A1 (en) * | 2003-02-28 | 2004-11-18 | Shinji Maekawa | Composition of carbon nitride, thin film transistor with the composition of carbon nitride, display device with the thin film transistor, and manufacturing method thereof |
JP4439358B2 (en) * | 2003-09-05 | 2010-03-24 | 株式会社東芝 | Field effect transistor and manufacturing method thereof |
JP4713089B2 (en) | 2004-03-18 | 2011-06-29 | エア・ウォーター株式会社 | Method for producing single crystal SiC substrate |
JP2006032655A (en) | 2004-07-16 | 2006-02-02 | Kyoto Univ | Manufacturing method of silicon carbide substrate |
JP2006036613A (en) | 2004-07-30 | 2006-02-09 | Nagaoka Univ Of Technology | Method for forming cubic silicon carbide crystal film on silicon substrate |
JP4561247B2 (en) * | 2004-08-31 | 2010-10-13 | 株式会社デンソー | Semiconductor device and manufacturing method thereof |
JP4511378B2 (en) | 2005-02-15 | 2010-07-28 | エア・ウォーター株式会社 | Method for forming single crystal SiC layer using SOI substrate |
JP4802542B2 (en) * | 2005-04-19 | 2011-10-26 | 株式会社デンソー | Silicon carbide semiconductor device |
JP4903439B2 (en) * | 2005-05-31 | 2012-03-28 | 株式会社東芝 | Field effect transistor |
JP4563918B2 (en) | 2005-10-31 | 2010-10-20 | エア・ウォーター株式会社 | Method for producing single crystal SiC substrate |
US7714352B2 (en) * | 2006-02-09 | 2010-05-11 | Nissan Motor Co., Ltd. | Hetero junction semiconductor device |
JP4961805B2 (en) * | 2006-04-03 | 2012-06-27 | 株式会社デンソー | Method for manufacturing silicon carbide semiconductor device |
JP4412335B2 (en) * | 2007-02-23 | 2010-02-10 | 株式会社デンソー | Method for manufacturing silicon carbide semiconductor device |
JP5141227B2 (en) * | 2007-12-12 | 2013-02-13 | 住友電気工業株式会社 | Manufacturing method of semiconductor device |
EP2432001A4 (en) * | 2009-05-11 | 2012-11-21 | Sumitomo Electric Industries | Method for producing semiconductor substrate |
JP5742712B2 (en) * | 2011-12-29 | 2015-07-01 | 住友電気工業株式会社 | Method for manufacturing silicon carbide semiconductor device |
-
2010
- 2010-02-04 SG SG10201600407SA patent/SG10201600407SA/en unknown
- 2010-02-04 SG SG2012061206A patent/SG183740A1/en unknown
- 2010-02-04 SG SG201000795-3A patent/SG164324A1/en unknown
- 2010-02-05 CN CN201010124800.6A patent/CN101814526B/en not_active Expired - Fee Related
- 2010-02-05 US US12/700,756 patent/US8368083B2/en active Active
- 2010-02-19 JP JP2010034356A patent/JP2010219515A/en not_active Withdrawn
-
2013
- 2013-01-24 US US13/748,916 patent/US8592267B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
CN101814526B (en) | 2016-02-03 |
US20130130447A1 (en) | 2013-05-23 |
US8592267B2 (en) | 2013-11-26 |
SG183740A1 (en) | 2012-09-27 |
CN101814526A (en) | 2010-08-25 |
JP2010219515A (en) | 2010-09-30 |
US20100213470A1 (en) | 2010-08-26 |
SG164324A1 (en) | 2010-09-29 |
US8368083B2 (en) | 2013-02-05 |
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