SG10201504351YA - Wafer processing method - Google Patents

Wafer processing method

Info

Publication number
SG10201504351YA
SG10201504351YA SG10201504351YA SG10201504351YA SG10201504351YA SG 10201504351Y A SG10201504351Y A SG 10201504351YA SG 10201504351Y A SG10201504351Y A SG 10201504351YA SG 10201504351Y A SG10201504351Y A SG 10201504351YA SG 10201504351Y A SG10201504351Y A SG 10201504351YA
Authority
SG
Singapore
Prior art keywords
processing method
wafer processing
wafer
processing
Prior art date
Application number
SG10201504351YA
Inventor
Nakamura Masaru
Mantoku Kimitake
Original Assignee
Disco Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Disco Corp filed Critical Disco Corp
Publication of SG10201504351YA publication Critical patent/SG10201504351YA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
    • B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
    • B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
    • B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H01L2221/68336—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding involving stretching of the auxiliary support post dicing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Inorganic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Dicing (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Laser Beam Processing (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
SG10201504351YA 2014-06-12 2015-06-03 Wafer processing method SG10201504351YA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014121256A JP2016001677A (en) 2014-06-12 2014-06-12 Wafer processing method

Publications (1)

Publication Number Publication Date
SG10201504351YA true SG10201504351YA (en) 2016-01-28

Family

ID=54836770

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10201504351YA SG10201504351YA (en) 2014-06-12 2015-06-03 Wafer processing method

Country Status (6)

Country Link
US (1) US9269624B2 (en)
JP (1) JP2016001677A (en)
KR (1) KR20150142597A (en)
CN (1) CN105304561A (en)
SG (1) SG10201504351YA (en)
TW (1) TW201604946A (en)

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Publication number Priority date Publication date Assignee Title
JP6425435B2 (en) * 2014-07-01 2018-11-21 株式会社ディスコ Tip spacing maintenance device
JP2016115800A (en) * 2014-12-15 2016-06-23 株式会社ディスコ Processing method for wafer
JP2016192494A (en) * 2015-03-31 2016-11-10 株式会社ディスコ Wafer dividing method
JP2017005158A (en) 2015-06-12 2017-01-05 株式会社ディスコ Method for grinding rear surface of wafer
JP6637831B2 (en) * 2016-04-28 2020-01-29 株式会社ディスコ Device manufacturing method and grinding device
DE102016211044B4 (en) * 2016-06-21 2024-02-15 Disco Corporation Method for processing a wafer and wafer processing system
JP6705727B2 (en) * 2016-09-26 2020-06-03 ファスフォードテクノロジ株式会社 Flip chip bonder and method for manufacturing semiconductor device
DE102017201154A1 (en) 2017-01-25 2018-07-26 Disco Corporation Method for processing a wafer and wafer processing system
JP6814674B2 (en) * 2017-03-24 2021-01-20 株式会社ディスコ Seat expansion device
DE102017208405B4 (en) * 2017-05-18 2024-05-02 Disco Corporation Method for processing a wafer and protective film
JP6991475B2 (en) * 2017-05-24 2022-01-12 協立化学産業株式会社 How to cut the object to be processed
JP6955918B2 (en) * 2017-07-03 2021-10-27 株式会社ディスコ Substrate processing method
KR20240038173A (en) * 2017-08-28 2024-03-22 린텍 가부시키가이샤 Mounting apparatus and mounting method
US10217637B1 (en) 2017-09-20 2019-02-26 International Business Machines Corporation Chip handling and electronic component integration
JP7015668B2 (en) * 2017-10-11 2022-02-03 株式会社ディスコ Plate-shaped partitioning device
JP6957109B2 (en) * 2017-12-12 2021-11-02 株式会社ディスコ Device chip manufacturing method and pickup device
JP7083573B2 (en) * 2018-04-09 2022-06-13 株式会社ディスコ Wafer processing method
JP7068028B2 (en) * 2018-05-09 2022-05-16 株式会社ディスコ Wafer division method
CN109571643A (en) * 2018-12-29 2019-04-05 肇庆鼎晟电子科技有限公司 Thermistor chip water knife cutting-up technique
JP7241580B2 (en) * 2019-03-26 2023-03-17 株式会社ディスコ Wafer processing method
CN110064974B (en) * 2019-04-25 2020-05-15 中国人民解放军陆军装甲兵学院 Method for inhibiting crack damage of hard and brittle material grinding processing by adopting surface layer toughening
KR20230025233A (en) * 2021-08-13 2023-02-21 주식회사 제우스 Wafer processing method

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JPH10172925A (en) * 1996-12-16 1998-06-26 Fuji Electric Co Ltd Cutting method of semiconductor wafer
JP3408805B2 (en) 2000-09-13 2003-05-19 浜松ホトニクス株式会社 Cutting origin region forming method and workpiece cutting method
JP2003007648A (en) 2001-06-18 2003-01-10 Disco Abrasive Syst Ltd Semiconductor wafer dividing system
JP2004119468A (en) * 2002-09-24 2004-04-15 Disco Abrasive Syst Ltd Wafer-level package dividing method
JP4296052B2 (en) * 2003-07-30 2009-07-15 シャープ株式会社 Manufacturing method of semiconductor device
JP2005223282A (en) 2004-02-09 2005-08-18 Disco Abrasive Syst Ltd Method for dividing wafer
JP2006269897A (en) * 2005-03-25 2006-10-05 Disco Abrasive Syst Ltd Laser processing method of wafer
KR100804891B1 (en) * 2006-02-14 2008-02-20 엘에스전선 주식회사 Dicing die attach film and semiconductor packaging method using the same
JP2008235650A (en) 2007-03-22 2008-10-02 Disco Abrasive Syst Ltd Method of manufacturing device
WO2009001732A1 (en) * 2007-06-22 2008-12-31 Denki Kagaku Kogyo Kabushiki Kaisha Method for grinding semiconductor wafer, and resin composition and protective sheet used for the method
JP2009231629A (en) * 2008-03-24 2009-10-08 Sekisui Chem Co Ltd Method of processing semiconductor wafer
JP5133855B2 (en) * 2008-11-25 2013-01-30 株式会社ディスコ Protective film coating method
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Also Published As

Publication number Publication date
CN105304561A (en) 2016-02-03
JP2016001677A (en) 2016-01-07
TW201604946A (en) 2016-02-01
US20150364375A1 (en) 2015-12-17
US9269624B2 (en) 2016-02-23
KR20150142597A (en) 2015-12-22

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