JPH10172925A - Cutting method of semiconductor wafer - Google Patents
Cutting method of semiconductor waferInfo
- Publication number
- JPH10172925A JPH10172925A JP33436296A JP33436296A JPH10172925A JP H10172925 A JPH10172925 A JP H10172925A JP 33436296 A JP33436296 A JP 33436296A JP 33436296 A JP33436296 A JP 33436296A JP H10172925 A JPH10172925 A JP H10172925A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor wafer
- cutting
- outer peripheral
- film
- peripheral portion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】この発明は、半導体ウェハを
チップ化する場合に、外周端まで完全に切断できる半導
体ウェハの切断方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for cutting a semiconductor wafer which can be completely cut to the outer peripheral edge when the semiconductor wafer is formed into chips.
【０００２】[0002]
【従来の技術】半導体ウェハをダイシング（切断）して
チップ化する場合に、金属製リングに張り付けられた、
接着剤を塗布したダイシング用フィルムに半導体ウェハ
を固定して、ダイヤモンド粉末で成形したブレード（ダ
イシングソーの歯）により、所定の大きさのチップに半
導体ウェハを切断する。半導体ウェハの外周部は、半導
体の各種加工で割れや欠けが発生しないように、予め適
当な量の面取り加工がされている。この面取り加工とい
うのは半導体ウェハの端面がナイフエッジのように鋭角
にならないように、端面を丸める加工で、その断面形状
は台形（グラインダー加工の場合）や滑らかな円形（エ
ッチング加工の場合）となる。この面取り加工した半導
体ウェハをダイシング用フイルムに貼り付けると、外周
部の端部は台形や円形の形状をしているために、ダイシ
ング用フィルムへの接着が不十分である。そのため、ブ
レードによる応力によって、半導体ウェハの外周部が切
断されるときに、ダイシング用フィルムから、半導体ウ
ェハの面取りした外周部の半導体片がフィルムから剥が
れて、半導体片の飛びが発生し、ブレードを破損した
り、周囲の正常なチップを傷つけるという不具合が発生
する。2. Description of the Related Art When dicing (cutting) a semiconductor wafer into chips, the semiconductor wafer is attached to a metal ring.
A semiconductor wafer is fixed to a dicing film to which an adhesive is applied, and the semiconductor wafer is cut into chips of a predetermined size by a blade (dicing saw teeth) formed of diamond powder. An appropriate amount of chamfering is performed on the outer peripheral portion of the semiconductor wafer in advance so that cracks and chips are not generated by various types of semiconductor processing. This chamfering is a process of rounding the end surface of a semiconductor wafer so that the end surface does not become an acute angle like a knife edge. Become. When the chamfered semiconductor wafer is attached to a dicing film, the edge of the outer peripheral portion has a trapezoidal or circular shape, so that the bonding to the dicing film is insufficient. Therefore, when the outer peripheral portion of the semiconductor wafer is cut by the stress caused by the blade, the chamfered outer peripheral portion of the semiconductor wafer is peeled off from the film from the dicing film, and the semiconductor piece jumps, and the blade is removed. Failures such as damage or damage to surrounding normal chips occur.
【０００３】[0003]
【発明が解決しようとする課題】これらの不具合を防止
するために、半導体ウェハの加工の最終工程で裏面をラ
ッピング（研削）して面取り量を少なくすると、前記の
不具合は解消されるが、半導体ウェハが薄くなり、また
ラッピング工程の追加でコスト上昇となる。また、半導
体ウェハを完全に裏面まで切断せずに、半導体ウェハを
その厚みの半分もしくは２／３程度の深さに切り込む、
所謂ハーフカット方式でチップ化する場合は半導体片の
飛びは防止できるが、ハーフカットの後、半導体ウェハ
を個々のチップに切り離すために、切り込み箇所に沿っ
て割る工程、つまりブレーキング工程が必要となる。し
かし、割ることでチップの外周端にバリができて、チッ
プサイズがばらつくという欠点がある。If the back surface is wrapped (ground) in the final step of processing a semiconductor wafer to reduce the amount of chamfering in order to prevent these problems, the above problems can be solved. The wafer becomes thinner, and the cost increases due to the addition of the lapping process. Cutting the semiconductor wafer to a depth of about half or 半 分 of the thickness without completely cutting the semiconductor wafer to the back surface;
When chips are formed by the so-called half-cut method, jumping of semiconductor pieces can be prevented, but after the half-cutting, a step of breaking along the cut portion, that is, a breaking step, is required to separate the semiconductor wafer into individual chips Become. However, there is a drawback in that the burrs are formed on the outer peripheral edge of the chip by cracking, and the chip size varies.
【０００４】この発明の目的は、前記の課題を解決し
て、外周部で半導体片の飛びが発生しない半導体ウェハ
の切断方法を提供することである。An object of the present invention is to solve the above-mentioned problem and to provide a method of cutting a semiconductor wafer in which a semiconductor piece does not fly at an outer peripheral portion.
【０００５】[0005]
【課題を解決するための手段】前記の目的を達成するた
めに、外周端が面取りされた半導体ウェハをチップ化す
るための切断方法において、半導体ウェハを切断用フィ
ルム（ダイシング用フィルム）に張り付ける工程と、張
り付けられた半導体ウェハの面取りされた端部（底部、
側面および上部）と切断用フィルムとが樹脂で被覆され
る工程と、該樹脂を含めて半導体ウェハを切断する工程
とを含む切断方法とする。前記の樹脂を常温硬化性の樹
脂とすることで取扱が容易で恒温槽などの設備が不要と
なる。In order to achieve the above object, in a cutting method for chipping a semiconductor wafer whose outer peripheral end is chamfered, the semiconductor wafer is attached to a cutting film (dicing film). Process and the chamfered edge (bottom, bottom) of the attached semiconductor wafer
The cutting method includes a step of covering the side and upper portions) and the cutting film with a resin, and a step of cutting the semiconductor wafer including the resin. By using the above-mentioned resin as a room-temperature curable resin, handling is easy and equipment such as a thermostat is not required.
【０００６】また半導体ウェハの外周部の面取りされた
端部がドーナッツ状のフィルムで押さえ込まれる工程
と、該ドーナッツ状のフィルムを含めて半導体ウェハを
切断する工程とを含む切断方法としてもよい。これらの
切断方法により、半導体ウェハのダイシングによるチッ
プ化の工程で、半導体ウェハの外周部を樹脂もしくはフ
ィルムで固定することで、ダイシング用フィルムから外
周部の半導体片が剥がれて、半導体片の飛びが発生する
ことを防止することができる。[0006] A cutting method may include a step of pressing a chamfered end of an outer peripheral portion of the semiconductor wafer with a donut-shaped film, and a step of cutting the semiconductor wafer including the donut-shaped film. By these cutting methods, in the process of chipping by dicing the semiconductor wafer, by fixing the outer peripheral portion of the semiconductor wafer with a resin or a film, the outer peripheral semiconductor piece is peeled off from the dicing film, and the semiconductor piece jumps. This can be prevented from occurring.
【０００７】[0007]
【発明の実施の形態】図１はこの発明の第１実施例の半
導体ウェハを固着する方法を示す図で、同図（ａ）は平
面図、同図（ｂ）は半導体ウェハの外周部の断面図であ
る。図１において、０．７ｍｍ厚で１５ｍｍ幅のステン
レスで製作された金属製リング６に接着剤２が塗布され
たダイシング用フィルム１（０．５ｍｍ程度の厚さ）を
張り付け、このダイシング用フィルム１に接着剤２を介
して半導体ウェハ４を張り付ける。この半導体ウェハ４
の面取り加工された外周部（ここではグラインダーで加
工した場合を示した）を常温硬化性の接着剤である樹脂
３で埋める。その後、常温で６時間程度放置し、樹脂３
を硬化させて、半導体ウェハ４の外周部をダイシング用
フィルム１に固着する。その後、図示されていないブレ
ード（ダイシングソーの歯のこと）で半導体ウェハ１を
切断してチップにする。外周部が樹脂１で固着されてい
るため、外周部の半導体片（シリコン片でチップとはな
らない部分）の飛びは発生しない。そのため、切断時の
ブレードの破損や半導体片が飛んでチップに傷を付ける
こともない。尚、２液性のエポキシ系樹脂が接着剤とし
ての樹脂３として有効である。また半導体ウェハ４のサ
イズは直径４インチ程度で、その中に形成されるチップ
のサイズは２ｍｍ□から３ｍｍ□程度である。FIG. 1 is a view showing a method of fixing a semiconductor wafer according to a first embodiment of the present invention. FIG. 1 (a) is a plan view, and FIG. 1 (b) is an outer peripheral portion of the semiconductor wafer. It is sectional drawing. In FIG. 1, a dicing film 1 (approximately 0.5 mm thick) coated with an adhesive 2 is adhered to a metal ring 6 made of stainless steel having a thickness of 0.7 mm and a width of 15 mm. A semiconductor wafer 4 is attached via an adhesive 2. This semiconductor wafer 4
Is filled with a resin 3 which is a room temperature curable adhesive. After that, it is left at room temperature for about 6 hours,
Is cured, and the outer peripheral portion of the semiconductor wafer 4 is fixed to the dicing film 1. Thereafter, the semiconductor wafer 1 is cut into chips by a blade (not shown) (a dicing saw tooth). Since the outer peripheral portion is fixed with the resin 1, the semiconductor piece (a portion of the silicon piece that does not become a chip) on the outer peripheral portion does not fly. For this reason, there is no damage to the chip due to breakage of the blade at the time of cutting or semiconductor chips flying. In addition, a two-component epoxy resin is effective as the resin 3 as an adhesive. The size of the semiconductor wafer 4 is about 4 inches in diameter, and the size of chips formed therein is about 2 to 3 mm.
【０００８】図２はこの発明の第２実施例の半導体ウェ
ハを固着する方法を示す図で、同図（ａ）は平面図、同
図（ｂ）は半導体ウェハの外周部の断面図である。図１
との違いは半導体ウェハの面取りされた外周部の固着
を、樹脂３で行うところを、ドーナッツ状のフィルム５
で行っている点である。このドーナッツ状のフィルム５
での固着法は、半導体ウェハ４の外周部をドーナッツ状
のフィルム５で押さえつけ、このドーナッツ状のフィル
ム５の半導体ウェハ４に接しない外側の部分を接着剤２
を塗布したダイシング用フィルム１に張り付けて、半導
体ウェハ４を固着する。こうすることで、前記と同様の
効果が得られる。またドーナッツ状のフィルム５の半導
体ウェハ４と接する面に接着剤を塗布すると、固着力が
一層増して効果的である。FIG. 2 is a view showing a method of fixing a semiconductor wafer according to a second embodiment of the present invention. FIG. 2 (a) is a plan view, and FIG. 2 (b) is a sectional view of an outer peripheral portion of the semiconductor wafer. . FIG.
The difference is that the fixing of the chamfered outer peripheral portion of the semiconductor wafer is performed with the resin 3, but the donut-shaped film 5 is used.
It is a point that goes in. This donut-shaped film 5
In the fixing method, the outer peripheral portion of the semiconductor wafer 4 is pressed with a donut-shaped film 5, and the outer portion of the donut-shaped film 5 that is not in contact with the semiconductor wafer 4 is an adhesive 2.
The semiconductor wafer 4 is fixed to the dicing film 1 on which the semiconductor wafer 4 is applied. By doing so, the same effect as described above can be obtained. When an adhesive is applied to the surface of the donut-shaped film 5 which is in contact with the semiconductor wafer 4, the adhesive force is further increased, which is effective.
【０００９】前記のように半導体片の飛びを防止したこ
とで、切断工程でのチップの傷等による不良の発生率が
従来０．５％〜２％であったものが、殆ど０％にするこ
とができた。[0009] By preventing the semiconductor piece from flying as described above, the rate of occurrence of defects due to chip flaws in the cutting process has conventionally been 0.5% to 2%, but is almost 0%. I was able to.
【００１０】[0010]
【発明の効果】この発明によれば、半導体ウェハの外周
部を樹脂やフィルムでしっかり固着することで、切断時
に半導体ウェハの外周部の半導体片がダイシング用フィ
ルムから離れて、半導体片が飛ぶことを防止できる。半
導体片の飛びが防止されることで、ダイシングソーの歯
の部分であるブレードの破損やチップを傷つけることが
なく、切断工程での良品率を向上させることができる。According to the present invention, by firmly fixing the outer peripheral portion of the semiconductor wafer with a resin or a film, the semiconductor pieces on the outer peripheral portion of the semiconductor wafer are separated from the dicing film and cut off at the time of cutting. Can be prevented. By preventing the semiconductor piece from jumping, the yield rate in the cutting process can be improved without breakage of the blade, which is the tooth portion of the dicing saw, or damage to the chip.
【図１】この発明の第１実施例の半導体ウェハを固着す
る方法を示す図で、（ａ）は平面図、（ｂ）は半導体ウ
ェハの外周部の断面図FIGS. 1A and 1B are diagrams showing a method of fixing a semiconductor wafer according to a first embodiment of the present invention, wherein FIG. 1A is a plan view and FIG.
【図２】この発明の第２実施例の半導体ウェハを固着す
る方法を示す図で、（ａ）は平面図、（ｂ）は半導体ウ
ェハの外周部の断面図FIGS. 2A and 2B are views showing a method of fixing a semiconductor wafer according to a second embodiment of the present invention, wherein FIG. 2A is a plan view and FIG.
１ ダイシング用フィルム ２ 接着剤 ３ 樹脂 ４ 半導体ウェハ ５ ドーナッツ状のフィルム ６ 金属製リング DESCRIPTION OF SYMBOLS 1 Dicing film 2 Adhesive 3 Resin 4 Semiconductor wafer 5 Donut-shaped film 6 Metal ring
Claims (3)
プ化するための切断方法において、半導体ウェハを切断
用フィルムに張り付ける工程と、張り付けられた半導体
ウェハの面取りされた端部と切断用フィルムとが樹脂で
被覆される工程と、該樹脂を含めて半導体ウェハを切断
する工程とを含むことを特徴とする半導体ウェハの切断
方法。1. A cutting method for chipping a semiconductor wafer having a chamfered outer peripheral end, the step of attaching the semiconductor wafer to a cutting film, the step of attaching the chamfered end of the attached semiconductor wafer and the cutting film. And a step of cutting the semiconductor wafer including the resin.
徴とする請求項１記載の半導体ウェハの切断方法。2. The method for cutting a semiconductor wafer according to claim 1, wherein the resin is a cold-setting adhesive.
法において、半導体ウェハを切断用フィルムに張り付け
る工程と、張り付けられた半導体ウェハの外周部の面取
りされた端部がドーナッツ状のフィルムで押さえ込まれ
る工程と、該ドーナッツ状のフィルムを含めて半導体ウ
ェハを切断する工程とを含むことを特徴とする半導体ウ
ェハの切断方法。3. A cutting method for forming a semiconductor wafer into chips, wherein the step of attaching the semiconductor wafer to a cutting film, and the chamfered end of the outer periphery of the attached semiconductor wafer is held down by a donut-shaped film. And a step of cutting the semiconductor wafer including the donut-shaped film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP33436296A JPH10172925A (en) | 1996-12-16 | 1996-12-16 | Cutting method of semiconductor wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP33436296A JPH10172925A (en) | 1996-12-16 | 1996-12-16 | Cutting method of semiconductor wafer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH10172925A true JPH10172925A (en) | 1998-06-26 |
Family
ID=18276533
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP33436296A Pending JPH10172925A (en) | 1996-12-16 | 1996-12-16 | Cutting method of semiconductor wafer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH10172925A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008185591A (en) * | 2008-02-22 | 2008-08-14 | Mitsubishi Electric Corp | Acceleration detector |
| JP2009064885A (en) * | 2007-09-05 | 2009-03-26 | Disco Abrasive Syst Ltd | Auxiliary member for dicing |
| JP2009130315A (en) * | 2007-11-28 | 2009-06-11 | Disco Abrasive Syst Ltd | Cutting method of wafer |
| CN102737980A (en) * | 2011-04-05 | 2012-10-17 | 株式会社迪思科 | Wafer grinding method |
| JP2013021110A (en) * | 2011-07-11 | 2013-01-31 | Disco Abrasive Syst Ltd | Method for processing disk-like workpiece |
| JP2013247136A (en) * | 2012-05-23 | 2013-12-09 | Disco Abrasive Syst Ltd | Tape and method for processing plate-like object using the tape |
| JP2016001677A (en) * | 2014-06-12 | 2016-01-07 | 株式会社ディスコ | Wafer processing method |
-
1996
- 1996-12-16 JP JP33436296A patent/JPH10172925A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009064885A (en) * | 2007-09-05 | 2009-03-26 | Disco Abrasive Syst Ltd | Auxiliary member for dicing |
| JP2009130315A (en) * | 2007-11-28 | 2009-06-11 | Disco Abrasive Syst Ltd | Cutting method of wafer |
| JP2008185591A (en) * | 2008-02-22 | 2008-08-14 | Mitsubishi Electric Corp | Acceleration detector |
| CN102737980A (en) * | 2011-04-05 | 2012-10-17 | 株式会社迪思科 | Wafer grinding method |
| JP2012222026A (en) * | 2011-04-05 | 2012-11-12 | Disco Abrasive Syst Ltd | Grinding method of wafer |
| JP2013021110A (en) * | 2011-07-11 | 2013-01-31 | Disco Abrasive Syst Ltd | Method for processing disk-like workpiece |
| JP2013247136A (en) * | 2012-05-23 | 2013-12-09 | Disco Abrasive Syst Ltd | Tape and method for processing plate-like object using the tape |
| JP2016001677A (en) * | 2014-06-12 | 2016-01-07 | 株式会社ディスコ | Wafer processing method |
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