SE9903675D0 - A device and a method for heat treatment of an object in a susceptor - Google Patents

A device and a method for heat treatment of an object in a susceptor

Info

Publication number
SE9903675D0
SE9903675D0 SE9903675A SE9903675A SE9903675D0 SE 9903675 D0 SE9903675 D0 SE 9903675D0 SE 9903675 A SE9903675 A SE 9903675A SE 9903675 A SE9903675 A SE 9903675A SE 9903675 D0 SE9903675 D0 SE 9903675D0
Authority
SE
Sweden
Prior art keywords
susceptor
walls
heat treatment
coil
heat
Prior art date
Application number
SE9903675A
Other languages
English (en)
Inventor
Peter Loefgren
Yujing Liu
Original Assignee
Abb Research Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Abb Research Ltd filed Critical Abb Research Ltd
Priority to SE9903675A priority Critical patent/SE9903675D0/sv
Publication of SE9903675D0 publication Critical patent/SE9903675D0/sv
Priority to US09/431,047 priority patent/US6481368B1/en
Priority to PCT/SE2000/001949 priority patent/WO2001027363A1/en

Links

Classifications

    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
    • F27D99/00—Subject matter not provided for in other groups of this subclass
    • F27D99/0001—Heating elements or systems
    • F27D99/0006—Electric heating elements or system
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/12—Heating of the reaction chamber
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
    • F27D99/00—Subject matter not provided for in other groups of this subclass
    • F27D99/0001—Heating elements or systems
    • F27D99/0006—Electric heating elements or system
    • F27D2099/0015—Induction heating
    • F27D2099/0016—Different magnetic fields, e.g. two coils, different characteristics of the same coil along its length or different parts of the same coil used
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
    • F27D99/00—Subject matter not provided for in other groups of this subclass
    • F27D99/0001—Heating elements or systems
    • F27D99/0006—Electric heating elements or system
    • F27D2099/0015—Induction heating
    • F27D2099/002—Core heating

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Engineering & Computer Science (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
SE9903675A 1999-10-13 1999-10-13 A device and a method for heat treatment of an object in a susceptor SE9903675D0 (sv)

Priority Applications (3)

Application Number Priority Date Filing Date Title
SE9903675A SE9903675D0 (sv) 1999-10-13 1999-10-13 A device and a method for heat treatment of an object in a susceptor
US09/431,047 US6481368B1 (en) 1999-10-13 1999-11-01 Device and a method for heat treatment of an object in a susceptor
PCT/SE2000/001949 WO2001027363A1 (en) 1999-10-13 2000-10-09 A device and a method for heat treatment of an object in a susceptor

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
SE9903675A SE9903675D0 (sv) 1999-10-13 1999-10-13 A device and a method for heat treatment of an object in a susceptor
US09/431,047 US6481368B1 (en) 1999-10-13 1999-11-01 Device and a method for heat treatment of an object in a susceptor

Publications (1)

Publication Number Publication Date
SE9903675D0 true SE9903675D0 (sv) 1999-10-13

Family

ID=26663659

Family Applications (1)

Application Number Title Priority Date Filing Date
SE9903675A SE9903675D0 (sv) 1999-10-13 1999-10-13 A device and a method for heat treatment of an object in a susceptor

Country Status (3)

Country Link
US (1) US6481368B1 (sv)
SE (1) SE9903675D0 (sv)
WO (1) WO2001027363A1 (sv)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10043599A1 (de) * 2000-09-01 2002-03-14 Aixtron Ag Vorrichtung zum Abscheiden insbesondere kristalliner Schichten auf einem oder mehreren insbesondere ebenfalls kristalliner Substraten
JP4181761B2 (ja) * 2001-06-21 2008-11-19 ジュン キム ヒョン 熱感受性非導電性基板上の半導体フィルムを熱処理するための方法および装置
FR3035971A1 (fr) * 2015-05-07 2016-11-11 Lab Francais Du Fractionnement Composition enrichie en immunoglobulines polyclonales anti-a et/ou anti-b

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2842605C2 (de) 1978-09-29 1983-12-08 Georg Dr. 8521 Langensendelbach Müller Verfahren zum Herstellen von Kristallen hoher Kristallgüte
JPS6144797A (ja) 1984-08-10 1986-03-04 Toshiba Corp 単結晶育成装置およびその制御方法
JPS6457600A (en) * 1987-08-27 1989-03-03 Mitsubishi Electric Corp Plasma generating device
US5136978A (en) * 1989-10-30 1992-08-11 The United States Of America As Represented By The Secretary Of The Air Force Heat pipe susceptor for epitaxy
US5316795A (en) * 1990-05-24 1994-05-31 Houston Advanced Research Center Halogen-assisted chemical vapor deposition of diamond
WO1992003588A1 (en) 1990-08-24 1992-03-05 Dca Instruments Oy Heater for an effusion cell
WO1994006263A1 (en) * 1992-09-01 1994-03-17 The University Of North Carolina At Chapel Hill High pressure magnetically assisted inductively coupled plasma
US5482257A (en) * 1992-09-25 1996-01-09 Martin Marietta Energy Systems, Inc. Non-graphite crucible for high temperature applications
US5346578A (en) * 1992-11-04 1994-09-13 Novellus Systems, Inc. Induction plasma source
US5540800A (en) * 1994-06-23 1996-07-30 Applied Materials, Inc. Inductively coupled high density plasma reactor for plasma assisted materials processing
US5540824A (en) * 1994-07-18 1996-07-30 Applied Materials Plasma reactor with multi-section RF coil and isolated conducting lid
US5591268A (en) * 1994-10-14 1997-01-07 Fujitsu Limited Plasma process with radicals
US5741460A (en) * 1995-06-07 1998-04-21 Adir Jacob Process for dry sterilization of medical devices and materials
GB9617540D0 (en) 1996-08-21 1996-10-02 Tesla Engineering Ltd Magnetic field generation

Also Published As

Publication number Publication date
WO2001027363A1 (en) 2001-04-19
US6481368B1 (en) 2002-11-19

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