JPS6457600A - Plasma generating device - Google Patents
Plasma generating deviceInfo
- Publication number
- JPS6457600A JPS6457600A JP62213303A JP21330387A JPS6457600A JP S6457600 A JPS6457600 A JP S6457600A JP 62213303 A JP62213303 A JP 62213303A JP 21330387 A JP21330387 A JP 21330387A JP S6457600 A JPS6457600 A JP S6457600A
- Authority
- JP
- Japan
- Prior art keywords
- coils
- vacuum container
- spirally
- winding direction
- wound
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
Abstract
PURPOSE:To generate high-density plasma only near the inner surface of a vacuum container by winding two electromagnetic induction coils in turn spirally in the same winding direction around the vacuum container. CONSTITUTION:A vacuum container 4 made of an insulating material such as quartz, coils 5 wound spirally on the surface around the vacuum container 4, and a high-frequency oscillator 6 connected to end sections of the coils 5 are provided. The coils 5 are formed by short-circuiting one of both ends of two coils wound in turn spirally in the same winding direction on the surface around the vacuum container 4. Since magnetic fields centering the adjacent coils have magnetic lines of force with opposite directions and offsetting each other, the region formed with the magnetic field is limited to the vicinity of the coils. Plasma with high density can be thereby generated near the coils 5, i.e., in the region near the inner surface of the vacuum container 4.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62213303A JPS6457600A (en) | 1987-08-27 | 1987-08-27 | Plasma generating device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62213303A JPS6457600A (en) | 1987-08-27 | 1987-08-27 | Plasma generating device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6457600A true JPS6457600A (en) | 1989-03-03 |
Family
ID=16636895
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62213303A Pending JPS6457600A (en) | 1987-08-27 | 1987-08-27 | Plasma generating device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6457600A (en) |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5179250A (en) * | 1989-10-19 | 1993-01-12 | Olin Corporation | Segmented cartridge assembly |
JPH0629256A (en) * | 1992-01-24 | 1994-02-04 | Applied Materials Inc | High-selectivity oxide etching process of integrated circuit structure |
US5346578A (en) * | 1992-11-04 | 1994-09-13 | Novellus Systems, Inc. | Induction plasma source |
US6171974B1 (en) | 1991-06-27 | 2001-01-09 | Applied Materials, Inc. | High selectivity oxide etch process for integrated circuit structures |
US6225744B1 (en) | 1992-11-04 | 2001-05-01 | Novellus Systems, Inc. | Plasma process apparatus for integrated circuit fabrication having dome-shaped induction coil |
US6475334B1 (en) | 1999-07-06 | 2002-11-05 | Nec Corporation | Dry etching device and dry etching method |
US6481368B1 (en) * | 1999-10-13 | 2002-11-19 | Abb Research Ltd | Device and a method for heat treatment of an object in a susceptor |
KR100417327B1 (en) * | 1995-06-30 | 2004-03-31 | 램 리서치 코포레이션 | Vacuum plasma processor |
JP2005228738A (en) * | 2004-01-13 | 2005-08-25 | Serubakku:Kk | Inductive coupling plasma processing apparatus |
KR101878225B1 (en) * | 2016-03-17 | 2018-07-13 | 인투코어테크놀로지 주식회사 | Inductively Coupled Plasma Apparatus |
-
1987
- 1987-08-27 JP JP62213303A patent/JPS6457600A/en active Pending
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5179250A (en) * | 1989-10-19 | 1993-01-12 | Olin Corporation | Segmented cartridge assembly |
US6171974B1 (en) | 1991-06-27 | 2001-01-09 | Applied Materials, Inc. | High selectivity oxide etch process for integrated circuit structures |
JPH0629256A (en) * | 1992-01-24 | 1994-02-04 | Applied Materials Inc | High-selectivity oxide etching process of integrated circuit structure |
US5346578A (en) * | 1992-11-04 | 1994-09-13 | Novellus Systems, Inc. | Induction plasma source |
US5405480A (en) * | 1992-11-04 | 1995-04-11 | Novellus Systems, Inc. | Induction plasma source |
US5605599A (en) * | 1992-11-04 | 1997-02-25 | Novellus Systems, Inc. | Method of generating plasma having high ion density for substrate processing operation |
US6225744B1 (en) | 1992-11-04 | 2001-05-01 | Novellus Systems, Inc. | Plasma process apparatus for integrated circuit fabrication having dome-shaped induction coil |
KR100417327B1 (en) * | 1995-06-30 | 2004-03-31 | 램 리서치 코포레이션 | Vacuum plasma processor |
US6475334B1 (en) | 1999-07-06 | 2002-11-05 | Nec Corporation | Dry etching device and dry etching method |
US6481368B1 (en) * | 1999-10-13 | 2002-11-19 | Abb Research Ltd | Device and a method for heat treatment of an object in a susceptor |
JP2005228738A (en) * | 2004-01-13 | 2005-08-25 | Serubakku:Kk | Inductive coupling plasma processing apparatus |
KR101878225B1 (en) * | 2016-03-17 | 2018-07-13 | 인투코어테크놀로지 주식회사 | Inductively Coupled Plasma Apparatus |
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