JPS6457600A - Plasma generating device - Google Patents

Plasma generating device

Info

Publication number
JPS6457600A
JPS6457600A JP62213303A JP21330387A JPS6457600A JP S6457600 A JPS6457600 A JP S6457600A JP 62213303 A JP62213303 A JP 62213303A JP 21330387 A JP21330387 A JP 21330387A JP S6457600 A JPS6457600 A JP S6457600A
Authority
JP
Japan
Prior art keywords
coils
vacuum container
spirally
winding direction
wound
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62213303A
Other languages
Japanese (ja)
Inventor
Shuji Nakao
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP62213303A priority Critical patent/JPS6457600A/en
Publication of JPS6457600A publication Critical patent/JPS6457600A/en
Pending legal-status Critical Current

Links

Landscapes

  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)

Abstract

PURPOSE:To generate high-density plasma only near the inner surface of a vacuum container by winding two electromagnetic induction coils in turn spirally in the same winding direction around the vacuum container. CONSTITUTION:A vacuum container 4 made of an insulating material such as quartz, coils 5 wound spirally on the surface around the vacuum container 4, and a high-frequency oscillator 6 connected to end sections of the coils 5 are provided. The coils 5 are formed by short-circuiting one of both ends of two coils wound in turn spirally in the same winding direction on the surface around the vacuum container 4. Since magnetic fields centering the adjacent coils have magnetic lines of force with opposite directions and offsetting each other, the region formed with the magnetic field is limited to the vicinity of the coils. Plasma with high density can be thereby generated near the coils 5, i.e., in the region near the inner surface of the vacuum container 4.
JP62213303A 1987-08-27 1987-08-27 Plasma generating device Pending JPS6457600A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62213303A JPS6457600A (en) 1987-08-27 1987-08-27 Plasma generating device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62213303A JPS6457600A (en) 1987-08-27 1987-08-27 Plasma generating device

Publications (1)

Publication Number Publication Date
JPS6457600A true JPS6457600A (en) 1989-03-03

Family

ID=16636895

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62213303A Pending JPS6457600A (en) 1987-08-27 1987-08-27 Plasma generating device

Country Status (1)

Country Link
JP (1) JPS6457600A (en)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5179250A (en) * 1989-10-19 1993-01-12 Olin Corporation Segmented cartridge assembly
JPH0629256A (en) * 1992-01-24 1994-02-04 Applied Materials Inc High-selectivity oxide etching process of integrated circuit structure
US5346578A (en) * 1992-11-04 1994-09-13 Novellus Systems, Inc. Induction plasma source
US6171974B1 (en) 1991-06-27 2001-01-09 Applied Materials, Inc. High selectivity oxide etch process for integrated circuit structures
US6225744B1 (en) 1992-11-04 2001-05-01 Novellus Systems, Inc. Plasma process apparatus for integrated circuit fabrication having dome-shaped induction coil
US6475334B1 (en) 1999-07-06 2002-11-05 Nec Corporation Dry etching device and dry etching method
US6481368B1 (en) * 1999-10-13 2002-11-19 Abb Research Ltd Device and a method for heat treatment of an object in a susceptor
KR100417327B1 (en) * 1995-06-30 2004-03-31 램 리서치 코포레이션 Vacuum plasma processor
JP2005228738A (en) * 2004-01-13 2005-08-25 Serubakku:Kk Inductive coupling plasma processing apparatus
KR101878225B1 (en) * 2016-03-17 2018-07-13 인투코어테크놀로지 주식회사 Inductively Coupled Plasma Apparatus

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5179250A (en) * 1989-10-19 1993-01-12 Olin Corporation Segmented cartridge assembly
US6171974B1 (en) 1991-06-27 2001-01-09 Applied Materials, Inc. High selectivity oxide etch process for integrated circuit structures
JPH0629256A (en) * 1992-01-24 1994-02-04 Applied Materials Inc High-selectivity oxide etching process of integrated circuit structure
US5346578A (en) * 1992-11-04 1994-09-13 Novellus Systems, Inc. Induction plasma source
US5405480A (en) * 1992-11-04 1995-04-11 Novellus Systems, Inc. Induction plasma source
US5605599A (en) * 1992-11-04 1997-02-25 Novellus Systems, Inc. Method of generating plasma having high ion density for substrate processing operation
US6225744B1 (en) 1992-11-04 2001-05-01 Novellus Systems, Inc. Plasma process apparatus for integrated circuit fabrication having dome-shaped induction coil
KR100417327B1 (en) * 1995-06-30 2004-03-31 램 리서치 코포레이션 Vacuum plasma processor
US6475334B1 (en) 1999-07-06 2002-11-05 Nec Corporation Dry etching device and dry etching method
US6481368B1 (en) * 1999-10-13 2002-11-19 Abb Research Ltd Device and a method for heat treatment of an object in a susceptor
JP2005228738A (en) * 2004-01-13 2005-08-25 Serubakku:Kk Inductive coupling plasma processing apparatus
KR101878225B1 (en) * 2016-03-17 2018-07-13 인투코어테크놀로지 주식회사 Inductively Coupled Plasma Apparatus

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