SE8602088L - BIPOLER INTEGRATED CIRCUIT, INCLUDING VERTICAL PNP TRANSISTORS, HAVING ITS COLLECTORS ON THE SUBSTRATE - Google Patents
BIPOLER INTEGRATED CIRCUIT, INCLUDING VERTICAL PNP TRANSISTORS, HAVING ITS COLLECTORS ON THE SUBSTRATEInfo
- Publication number
- SE8602088L SE8602088L SE8602088A SE8602088A SE8602088L SE 8602088 L SE8602088 L SE 8602088L SE 8602088 A SE8602088 A SE 8602088A SE 8602088 A SE8602088 A SE 8602088A SE 8602088 L SE8602088 L SE 8602088L
- Authority
- SE
- Sweden
- Prior art keywords
- substrate
- collectors
- integrated circuit
- bipoler
- including vertical
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title abstract 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
- H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
- H01L27/0826—Combination of vertical complementary transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/761—PN junctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8222—Bipolar technology
- H01L21/8228—Complementary devices, e.g. complementary transistors
- H01L21/82285—Complementary vertical transistors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
- Element Separation (AREA)
Abstract
The integrated circuit is formed by a plurality of epitaxial layers 4, 5, 15 on a substrate 1 of monocrystalline silicon and comprises vertical bipolar transistors 7, 9, 24, 26 of p-n-p type having their collectors 7, 9 on the substrate and bipolar transistors 16, 21, 25, 27, 29 of n-p-n type. The transistors of opposite type are electrically isolated from one another by an isolating structure comprising three diodes 20, 22, 25, 31. <IMAGE>
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IT20640/85A IT1218471B (en) | 1985-05-09 | 1985-05-09 | BIPOLAR INTEGRATED CIRCUIT INCLUDING VERTICAL PNP TRANSISTORS WITH COLLECTOR ON THE SUBSTRATE |
Publications (2)
Publication Number | Publication Date |
---|---|
SE8602088D0 SE8602088D0 (en) | 1986-05-07 |
SE8602088L true SE8602088L (en) | 1986-11-10 |
Family
ID=11169918
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SE8602088A SE8602088L (en) | 1985-05-09 | 1986-05-07 | BIPOLER INTEGRATED CIRCUIT, INCLUDING VERTICAL PNP TRANSISTORS, HAVING ITS COLLECTORS ON THE SUBSTRATE |
Country Status (6)
Country | Link |
---|---|
JP (1) | JPS61260666A (en) |
FR (1) | FR2581796B1 (en) |
GB (1) | GB2175138B (en) |
IT (1) | IT1218471B (en) |
NL (1) | NL8601107A (en) |
SE (1) | SE8602088L (en) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4951115A (en) * | 1989-03-06 | 1990-08-21 | International Business Machines Corp. | Complementary transistor structure and method for manufacture |
JP2835116B2 (en) * | 1989-09-29 | 1998-12-14 | 株式会社東芝 | Power IC and method of manufacturing the same |
EP0915508A1 (en) * | 1997-10-10 | 1999-05-12 | STMicroelectronics S.r.l. | Integrated circuit with highly efficient junction insulation |
DE19805786A1 (en) * | 1998-02-12 | 1999-08-26 | Siemens Ag | Semiconductor component with structure to avoid cross currents |
GB2367187B (en) * | 2000-09-21 | 2002-11-13 | Bookham Technology Plc | An isolation device |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3648128A (en) * | 1968-05-25 | 1972-03-07 | Sony Corp | An integrated complementary transistor circuit chip with polycrystalline contact to buried collector regions |
JPS5942463B2 (en) * | 1972-09-22 | 1984-10-15 | ソニー株式会社 | Semiconductor integrated circuit device |
JPS5914897B2 (en) * | 1975-02-08 | 1984-04-06 | ソニー株式会社 | semiconductor equipment |
JPS5710964A (en) * | 1980-06-25 | 1982-01-20 | Fujitsu Ltd | Manufacture of semiconductor device |
US4609413A (en) * | 1983-11-18 | 1986-09-02 | Motorola, Inc. | Method for manufacturing and epitaxially isolated semiconductor utilizing etch and refill technique |
-
1985
- 1985-05-09 IT IT20640/85A patent/IT1218471B/en active
-
1986
- 1986-04-29 NL NL8601107A patent/NL8601107A/en not_active Application Discontinuation
- 1986-05-07 FR FR868606607A patent/FR2581796B1/en not_active Expired
- 1986-05-07 SE SE8602088A patent/SE8602088L/en not_active Application Discontinuation
- 1986-05-08 GB GB8611203A patent/GB2175138B/en not_active Expired
- 1986-05-09 JP JP61105016A patent/JPS61260666A/en active Pending
Also Published As
Publication number | Publication date |
---|---|
SE8602088D0 (en) | 1986-05-07 |
IT1218471B (en) | 1990-04-19 |
JPS61260666A (en) | 1986-11-18 |
GB2175138B (en) | 1989-04-19 |
GB2175138A (en) | 1986-11-19 |
IT8520640A0 (en) | 1985-05-09 |
GB8611203D0 (en) | 1986-06-18 |
FR2581796B1 (en) | 1989-05-19 |
NL8601107A (en) | 1986-12-01 |
FR2581796A1 (en) | 1986-11-14 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
SE8700351D0 (en) | MONOLITHICALLY INTEGRATED SEMICONDUCTOR DEVICE CONTAINING BIPOLAR JUNCTION TRANSISTORS, CMOS AND DMOS TRANSISTORS AND LOW LEAKAGE DIODES AND A METHOD FOR ITS FABRICATION | |
IT8820357A0 (en) | PROCEDURE FOR THE FORMATION OF AN INTEGRATED CIRCUIT ON AN N-TYPE SUBSTRATE, INCLUDING VERTICAL PNP AND NPN TRANSISTORS INSULATED FROM EACH OTHER. | |
KR860007750A (en) | Semiconductor devices | |
KR910010728A (en) | Hybrid Integrated Circuit Devices | |
SE8007199L (en) | Zener diode | |
DE3786701D1 (en) | SILICON PACKINGS FOR PERFORMANCE SEMICONDUCTOR ARRANGEMENTS. | |
SE8602088D0 (en) | BIPOLER INTEGRATED CIRCUIT, INCLUDING VERTICAL PNP TRANSISTORS, HAVING ITS COLLECTORS ON THE SUBSTRATE | |
DE3785126D1 (en) | IMPATT DIODE. | |
KR890013783A (en) | Multi-collector vertical semiconductor device and manufacturing method thereof | |
ES2030389T3 (en) | MANUFACTURING PROCESS OF INTEGRATED CIRCUITS TO FORM A BIPOLAR TRANSISTOR PROVIDED WITH EXTRINSIC BASE REGIONS. | |
KR940012603A (en) | Improved Bipolar Transistor | |
CA2046815A1 (en) | Semiconductor integrating circuit | |
KR860001488A (en) | Semiconductor Devices with Bipolar Transistors and IIL | |
JPH0244759A (en) | Semiconductor integrated circuit device | |
GB1496306A (en) | Semiconductor integrated circuit including an epitaxial base type vertical transistor | |
JPS6450556A (en) | Semiconductor integrated circuit device | |
KR850006276A (en) | Logic circuit | |
SE8304013D0 (en) | MULTIPLE TRANSISTOR | |
JPS57197835A (en) | Semiconductor device | |
JPS5533007A (en) | Semiconductor intergated circuit | |
JPS56162540A (en) | Logical circuit | |
JPS5263080A (en) | Production of semiconductor integrated circuit device | |
KR940004838A (en) | Semiconductor device with improved electrostatic properties | |
JPS6484744A (en) | Bicmos integrated circuit | |
JPS5343484A (en) | Semiconductor integrated circuit device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
NAV | Patent application has lapsed |
Ref document number: 8602088-0 Effective date: 19881201 Format of ref document f/p: F |