SE8602088L - BIPOLER INTEGRATED CIRCUIT, INCLUDING VERTICAL PNP TRANSISTORS, HAVING ITS COLLECTORS ON THE SUBSTRATE - Google Patents

BIPOLER INTEGRATED CIRCUIT, INCLUDING VERTICAL PNP TRANSISTORS, HAVING ITS COLLECTORS ON THE SUBSTRATE

Info

Publication number
SE8602088L
SE8602088L SE8602088A SE8602088A SE8602088L SE 8602088 L SE8602088 L SE 8602088L SE 8602088 A SE8602088 A SE 8602088A SE 8602088 A SE8602088 A SE 8602088A SE 8602088 L SE8602088 L SE 8602088L
Authority
SE
Sweden
Prior art keywords
substrate
collectors
integrated circuit
bipoler
including vertical
Prior art date
Application number
SE8602088A
Other languages
Unknown language ( )
Swedish (sv)
Other versions
SE8602088D0 (en
Inventor
U Mastromatteo
Original Assignee
Sgs Microelettronica Spa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sgs Microelettronica Spa filed Critical Sgs Microelettronica Spa
Publication of SE8602088D0 publication Critical patent/SE8602088D0/en
Publication of SE8602088L publication Critical patent/SE8602088L/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
    • H01L27/0826—Combination of vertical complementary transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/761—PN junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8222—Bipolar technology
    • H01L21/8228—Complementary devices, e.g. complementary transistors
    • H01L21/82285—Complementary vertical transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Element Separation (AREA)

Abstract

The integrated circuit is formed by a plurality of epitaxial layers 4, 5, 15 on a substrate 1 of monocrystalline silicon and comprises vertical bipolar transistors 7, 9, 24, 26 of p-n-p type having their collectors 7, 9 on the substrate and bipolar transistors 16, 21, 25, 27, 29 of n-p-n type. The transistors of opposite type are electrically isolated from one another by an isolating structure comprising three diodes 20, 22, 25, 31. <IMAGE>
SE8602088A 1985-05-09 1986-05-07 BIPOLER INTEGRATED CIRCUIT, INCLUDING VERTICAL PNP TRANSISTORS, HAVING ITS COLLECTORS ON THE SUBSTRATE SE8602088L (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT20640/85A IT1218471B (en) 1985-05-09 1985-05-09 BIPOLAR INTEGRATED CIRCUIT INCLUDING VERTICAL PNP TRANSISTORS WITH COLLECTOR ON THE SUBSTRATE

Publications (2)

Publication Number Publication Date
SE8602088D0 SE8602088D0 (en) 1986-05-07
SE8602088L true SE8602088L (en) 1986-11-10

Family

ID=11169918

Family Applications (1)

Application Number Title Priority Date Filing Date
SE8602088A SE8602088L (en) 1985-05-09 1986-05-07 BIPOLER INTEGRATED CIRCUIT, INCLUDING VERTICAL PNP TRANSISTORS, HAVING ITS COLLECTORS ON THE SUBSTRATE

Country Status (6)

Country Link
JP (1) JPS61260666A (en)
FR (1) FR2581796B1 (en)
GB (1) GB2175138B (en)
IT (1) IT1218471B (en)
NL (1) NL8601107A (en)
SE (1) SE8602088L (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4951115A (en) * 1989-03-06 1990-08-21 International Business Machines Corp. Complementary transistor structure and method for manufacture
JP2835116B2 (en) * 1989-09-29 1998-12-14 株式会社東芝 Power IC and method of manufacturing the same
EP0915508A1 (en) * 1997-10-10 1999-05-12 STMicroelectronics S.r.l. Integrated circuit with highly efficient junction insulation
DE19805786A1 (en) * 1998-02-12 1999-08-26 Siemens Ag Semiconductor component with structure to avoid cross currents
GB2367187B (en) * 2000-09-21 2002-11-13 Bookham Technology Plc An isolation device

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3648128A (en) * 1968-05-25 1972-03-07 Sony Corp An integrated complementary transistor circuit chip with polycrystalline contact to buried collector regions
JPS5942463B2 (en) * 1972-09-22 1984-10-15 ソニー株式会社 Semiconductor integrated circuit device
JPS5914897B2 (en) * 1975-02-08 1984-04-06 ソニー株式会社 semiconductor equipment
JPS5710964A (en) * 1980-06-25 1982-01-20 Fujitsu Ltd Manufacture of semiconductor device
US4609413A (en) * 1983-11-18 1986-09-02 Motorola, Inc. Method for manufacturing and epitaxially isolated semiconductor utilizing etch and refill technique

Also Published As

Publication number Publication date
SE8602088D0 (en) 1986-05-07
IT1218471B (en) 1990-04-19
JPS61260666A (en) 1986-11-18
GB2175138B (en) 1989-04-19
GB2175138A (en) 1986-11-19
IT8520640A0 (en) 1985-05-09
GB8611203D0 (en) 1986-06-18
FR2581796B1 (en) 1989-05-19
NL8601107A (en) 1986-12-01
FR2581796A1 (en) 1986-11-14

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