JPS6484744A - Bicmos integrated circuit - Google Patents
Bicmos integrated circuitInfo
- Publication number
- JPS6484744A JPS6484744A JP24451687A JP24451687A JPS6484744A JP S6484744 A JPS6484744 A JP S6484744A JP 24451687 A JP24451687 A JP 24451687A JP 24451687 A JP24451687 A JP 24451687A JP S6484744 A JPS6484744 A JP S6484744A
- Authority
- JP
- Japan
- Prior art keywords
- region
- type
- power source
- transistor
- source terminal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 abstract 4
- 230000015572 biosynthetic process Effects 0.000 abstract 2
- 230000010354 integration Effects 0.000 abstract 2
- 239000012535 impurity Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
- H01L27/0623—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Bipolar Transistors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE:To obtain a BiCMOS integrated circuit having a high integration, by forming a MOS transistor where a collector is connected into a collector region of a vertical bipolar transistor which is connected to a power source terminal, a drain is connected to a base of the said bipolar transistor, and a source is connected to the power source terminal respectively. CONSTITUTION:This element comprises: an element formation region which is provided at the surface of a semiconductor substrate p15 and is made up by an n-type semiconductor layer n17 that is dielectrically isolated from surroundings; a vertical type npn transistor Q1 consisting of the said n-type semiconductor layer n17 and containing a collector region that is connected to a power source terminal Vcc; a p-type MOS transistor M1 consisting of a p-type impurity added region that is formed selectively at the foregoing n-type semiconductor n17 and containing a source region p11 that is connected to the said power source Vcc as well as a drain region p12 that is connected to a base region p13 of the said vertical type pnp transistor Q1. Thus, an integration degree is improved by installing a bipolar transistor which composes an off-buffer part of a BiCMOS circuit as well as a p-type MOS transistor in the same element formation region.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP24451687A JPS6484744A (en) | 1987-09-28 | 1987-09-28 | Bicmos integrated circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP24451687A JPS6484744A (en) | 1987-09-28 | 1987-09-28 | Bicmos integrated circuit |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6484744A true JPS6484744A (en) | 1989-03-30 |
Family
ID=17119840
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP24451687A Pending JPS6484744A (en) | 1987-09-28 | 1987-09-28 | Bicmos integrated circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6484744A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04103161A (en) * | 1990-08-22 | 1992-04-06 | Toshiba Corp | Semiconductor device with bipolar transistor and insulated gate transistor mixedly mounted thereon |
US7560782B2 (en) | 2005-11-25 | 2009-07-14 | Fabio Pellizzer | Transistor structure with high input impedance and high current capability |
JP2016530490A (en) * | 2013-06-20 | 2016-09-29 | ケー.エクランド イノベーション | Integrated sensor device for charge detection |
-
1987
- 1987-09-28 JP JP24451687A patent/JPS6484744A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04103161A (en) * | 1990-08-22 | 1992-04-06 | Toshiba Corp | Semiconductor device with bipolar transistor and insulated gate transistor mixedly mounted thereon |
US7560782B2 (en) | 2005-11-25 | 2009-07-14 | Fabio Pellizzer | Transistor structure with high input impedance and high current capability |
JP2016530490A (en) * | 2013-06-20 | 2016-09-29 | ケー.エクランド イノベーション | Integrated sensor device for charge detection |
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