JPS6484744A - Bicmos integrated circuit - Google Patents

Bicmos integrated circuit

Info

Publication number
JPS6484744A
JPS6484744A JP24451687A JP24451687A JPS6484744A JP S6484744 A JPS6484744 A JP S6484744A JP 24451687 A JP24451687 A JP 24451687A JP 24451687 A JP24451687 A JP 24451687A JP S6484744 A JPS6484744 A JP S6484744A
Authority
JP
Japan
Prior art keywords
region
type
power source
transistor
source terminal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP24451687A
Other languages
Japanese (ja)
Inventor
Mitsuhiro Hamada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP24451687A priority Critical patent/JPS6484744A/en
Publication of JPS6484744A publication Critical patent/JPS6484744A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0623—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Transistors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To obtain a BiCMOS integrated circuit having a high integration, by forming a MOS transistor where a collector is connected into a collector region of a vertical bipolar transistor which is connected to a power source terminal, a drain is connected to a base of the said bipolar transistor, and a source is connected to the power source terminal respectively. CONSTITUTION:This element comprises: an element formation region which is provided at the surface of a semiconductor substrate p15 and is made up by an n-type semiconductor layer n17 that is dielectrically isolated from surroundings; a vertical type npn transistor Q1 consisting of the said n-type semiconductor layer n17 and containing a collector region that is connected to a power source terminal Vcc; a p-type MOS transistor M1 consisting of a p-type impurity added region that is formed selectively at the foregoing n-type semiconductor n17 and containing a source region p11 that is connected to the said power source Vcc as well as a drain region p12 that is connected to a base region p13 of the said vertical type pnp transistor Q1. Thus, an integration degree is improved by installing a bipolar transistor which composes an off-buffer part of a BiCMOS circuit as well as a p-type MOS transistor in the same element formation region.
JP24451687A 1987-09-28 1987-09-28 Bicmos integrated circuit Pending JPS6484744A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP24451687A JPS6484744A (en) 1987-09-28 1987-09-28 Bicmos integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP24451687A JPS6484744A (en) 1987-09-28 1987-09-28 Bicmos integrated circuit

Publications (1)

Publication Number Publication Date
JPS6484744A true JPS6484744A (en) 1989-03-30

Family

ID=17119840

Family Applications (1)

Application Number Title Priority Date Filing Date
JP24451687A Pending JPS6484744A (en) 1987-09-28 1987-09-28 Bicmos integrated circuit

Country Status (1)

Country Link
JP (1) JPS6484744A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04103161A (en) * 1990-08-22 1992-04-06 Toshiba Corp Semiconductor device with bipolar transistor and insulated gate transistor mixedly mounted thereon
US7560782B2 (en) 2005-11-25 2009-07-14 Fabio Pellizzer Transistor structure with high input impedance and high current capability
JP2016530490A (en) * 2013-06-20 2016-09-29 ケー．エクランド イノベーション Integrated sensor device for charge detection

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04103161A (en) * 1990-08-22 1992-04-06 Toshiba Corp Semiconductor device with bipolar transistor and insulated gate transistor mixedly mounted thereon
US7560782B2 (en) 2005-11-25 2009-07-14 Fabio Pellizzer Transistor structure with high input impedance and high current capability
JP2016530490A (en) * 2013-06-20 2016-09-29 ケー．エクランド イノベーション Integrated sensor device for charge detection

Similar Documents

Publication Publication Date Title
US4826780A (en) Method of making bipolar transistors
US5376816A (en) Bi-cmos integrated circuit device having buried region use in common for bipolar and mos transistors
US5262345A (en) Complimentary bipolar/CMOS fabrication method
GB8507624D0 (en) Semiconductor devices
TW429588B (en) Semiconductor device having protection circuit implemented by bipolar transistor for discharging static charge current and process of fabrication
US5302848A (en) Integrated circuit with complementary junction-isolated bipolar transistors
JPS6484744A (en) Bicmos integrated circuit
US5065214A (en) Integrated circuit with complementary junction-isolated bipolar transistors
US5529939A (en) Method of making an integrated circuit with complementary isolated bipolar transistors
EP0347550A3 (en) Process for fabricating isolated vertical and super beta bipolar transistors
JPS6463828A (en) Semiconductor temperature detecting circuit
GB1496306A (en) Semiconductor integrated circuit including an epitaxial base type vertical transistor
JPS56142661A (en) Semiconductor integrated circuit and manufacture thereof
JP2709961B2 (en) Integrated power transistor
JP3250248B2 (en) Semiconductor device
US6005282A (en) Integrated circuit with complementary isolated bipolar transistors
JPS55107261A (en) Semiconductor integrated circuit device
JPS5580350A (en) Semiconductor integrated circuit
JPS6447064A (en) Semiconductor device
GB1465788A (en) Monolithic structure including a transistor
JPS5562762A (en) Semiconductor device
EP0240273A3 (en) Programmable transistors
JPS5533007A (en) Semiconductor intergated circuit
EP0316562A3 (en) Semiconductor bipolar transistors with base and emitter structures in a trench and process to produce same
JPS54137283A (en) Lateral pnp transistor