JPS56162540A - Logical circuit - Google Patents

Logical circuit

Info

Publication number
JPS56162540A
JPS56162540A JP2173681A JP2173681A JPS56162540A JP S56162540 A JPS56162540 A JP S56162540A JP 2173681 A JP2173681 A JP 2173681A JP 2173681 A JP2173681 A JP 2173681A JP S56162540 A JPS56162540 A JP S56162540A
Authority
JP
Japan
Prior art keywords
type semiconductor
regions
groove
emitter
collector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2173681A
Other languages
Japanese (ja)
Inventor
Toshihiro Sekikawa
Yutaka Hayashi
Yasuo Tarui
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP2173681A priority Critical patent/JPS56162540A/en
Publication of JPS56162540A publication Critical patent/JPS56162540A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0821—Combination of lateral and vertical transistors only

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Logic Circuits (AREA)

Abstract

PURPOSE:To prevent the formation of a parasitic transistor (TR) by constituting a PNP lateral TR which has a p type semiconductor region as an emitter or collector and an N type semiconductor as a base and by making its depth great enough to reach the N type semiconductor. CONSTITUTION:An N type semiconductor layer 21a formed on an N<+> type semiconductor substrate 21, P type semiconductor regions 22, 23 and 200 formed on the layer 21a, a groove A separating the regions 22 and 23 into mutual facing parts, and a groove B separating the regions 22 and 200 are provided. Then, the regions 22 and 23 are used as an emitter and collector, and the N type semiconductor 21a as a base, thus constituting a PNP lateral TR. The groove B is deep enough to reach the N<+> type semiconductor substrate 21 and between the P type semiconductor regions 22 and 23 and the P type semiconductor region 200 adjoining to them, no TR effect occurs, thereby preventing the formation of a parasitic TR.
JP2173681A 1981-02-17 1981-02-17 Logical circuit Pending JPS56162540A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2173681A JPS56162540A (en) 1981-02-17 1981-02-17 Logical circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2173681A JPS56162540A (en) 1981-02-17 1981-02-17 Logical circuit

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP6362676A Division JPS52147083A (en) 1976-06-02 1976-06-02 Semiconductor devices and integrated circuit using the same

Publications (1)

Publication Number Publication Date
JPS56162540A true JPS56162540A (en) 1981-12-14

Family

ID=12063356

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2173681A Pending JPS56162540A (en) 1981-02-17 1981-02-17 Logical circuit

Country Status (1)

Country Link
JP (1) JPS56162540A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5911502A (en) * 1982-07-09 1984-01-21 Hitachi Ltd Circuit for detecting power supply off

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5911502A (en) * 1982-07-09 1984-01-21 Hitachi Ltd Circuit for detecting power supply off

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