SE7705500L - Skyddsanordning for halvledardon av mos-typ - Google Patents

Skyddsanordning for halvledardon av mos-typ

Info

Publication number
SE7705500L
SE7705500L SE7705500A SE7705500A SE7705500L SE 7705500 L SE7705500 L SE 7705500L SE 7705500 A SE7705500 A SE 7705500A SE 7705500 A SE7705500 A SE 7705500A SE 7705500 L SE7705500 L SE 7705500L
Authority
SE
Sweden
Prior art keywords
mos
circuit
leader
protective device
nodes
Prior art date
Application number
SE7705500A
Other languages
Unknown language ( )
English (en)
Inventor
J Ollendorf
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rca Corp filed Critical Rca Corp
Publication of SE7705500L publication Critical patent/SE7705500L/sv

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
    • H01L27/075—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor
    • H01L27/0755—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Protection Of Static Devices (AREA)
  • Amplifiers (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Emergency Protection Circuit Devices (AREA)
SE7705500A 1976-05-24 1977-05-11 Skyddsanordning for halvledardon av mos-typ SE7705500L (sv)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/689,269 US4100561A (en) 1976-05-24 1976-05-24 Protective circuit for MOS devices

Publications (1)

Publication Number Publication Date
SE7705500L true SE7705500L (sv) 1977-11-25

Family

ID=24767729

Family Applications (1)

Application Number Title Priority Date Filing Date
SE7705500A SE7705500L (sv) 1976-05-24 1977-05-11 Skyddsanordning for halvledardon av mos-typ

Country Status (5)

Country Link
US (1) US4100561A (sv)
JP (1) JPS52144282A (sv)
DE (1) DE2722892A1 (sv)
GB (1) GB1555155A (sv)
SE (1) SE7705500L (sv)

Families Citing this family (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2374742A1 (fr) * 1976-12-20 1978-07-13 Radiotechnique Compelec Transistor multicouche pour tensions elevees et son procede de fabrication
JPS574431Y2 (sv) * 1977-05-20 1982-01-27
US4276555A (en) * 1978-07-13 1981-06-30 International Business Machines Corporation Controlled avalanche voltage transistor and magnetic sensor
US4264941A (en) * 1979-02-14 1981-04-28 National Semiconductor Corporation Protective circuit for insulated gate field effect transistor integrated circuits
US4295176A (en) * 1979-09-04 1981-10-13 Bell Telephone Laboratories, Incorporated Semiconductor integrated circuit protection arrangement
SE8105041L (sv) * 1981-08-25 1983-02-26 Ericsson Telefon Ab L M Planartransistor med integrerat overspenningsskydd
JPS5967670A (ja) * 1982-10-12 1984-04-17 Toshiba Corp 半導体装置
JPS6010765A (ja) * 1983-06-30 1985-01-19 Fujitsu Ltd 半導体装置
JPS6068721A (ja) * 1983-09-22 1985-04-19 Fujitsu Ltd Ｅｃｌ回路
JPS60231356A (ja) * 1984-04-28 1985-11-16 Mitsubishi Electric Corp 相補形金属酸化膜半導体集積回路装置
JPS6153761A (ja) * 1984-08-24 1986-03-17 Hitachi Ltd 半導体装置
US4757363A (en) * 1984-09-14 1988-07-12 Harris Corporation ESD protection network for IGFET circuits with SCR prevention guard rings
GB2185621B (en) * 1985-10-29 1988-12-14 Plessey Co Plc Protection structures
US4990976A (en) * 1987-11-24 1991-02-05 Nec Corporation Semiconductor device including a field effect transistor having a protective diode between source and drain thereof
US5072273A (en) * 1990-05-04 1991-12-10 David Sarnoff Research Center, Inc. Low trigger voltage SCR protection device and structure
US5274262A (en) * 1989-05-17 1993-12-28 David Sarnoff Research Center, Inc. SCR protection structure and circuit with reduced trigger voltage
JP2505652B2 (ja) * 1989-05-17 1996-06-12 デイビッド サーノフ リサーチ センター，インコーポレイテッド 低トリガ電圧ｓｃｒ保護装置及び構造
US5247201A (en) * 1990-02-15 1993-09-21 Siemens Aktiengesellschaft Input protection structure for integrated circuits
KR960002094B1 (ko) * 1990-11-30 1996-02-10 가부시키가이샤 도시바 입력보호회로를 갖춘 반도체장치
US5359211A (en) * 1991-07-18 1994-10-25 Harris Corporation High voltage protection using SCRs
FR2687009B1 (fr) * 1992-01-31 1994-04-29 Sgs Thomson Microelectronics Composant de protection pour circuit automobile.
US5446302A (en) * 1993-12-14 1995-08-29 Analog Devices, Incorporated Integrated circuit with diode-connected transistor for reducing ESD damage
JPH07283405A (ja) * 1994-04-13 1995-10-27 Toshiba Corp 半導体装置の保護回路
US5607867A (en) * 1994-07-15 1997-03-04 Texas Instruments Incorporated Method of forming a controlled low collector breakdown voltage transistor for ESD protection circuits
JP3332123B2 (ja) * 1994-11-10 2002-10-07 株式会社東芝 入力保護回路及びこれを用いた半導体装置
US5789785A (en) * 1995-02-28 1998-08-04 Sgs-Thomson Microelectronics S.R.L. Device for the protection of an integrated circuit against electrostatic discharges
US5629544A (en) * 1995-04-25 1997-05-13 International Business Machines Corporation Semiconductor diode with silicide films and trench isolation
US5731941A (en) * 1995-09-08 1998-03-24 International Business Machines Corporation Electrostatic discharge suppression circuit employing trench capacitor
WO1997010615A1 (en) * 1995-09-11 1997-03-20 Analog Devices, Inc. (Adi) Electrostatic discharge protection network and method
US5663860A (en) * 1996-06-28 1997-09-02 Harris Corporation High voltage protection circuits
KR100214566B1 (ko) * 1997-04-22 1999-08-02 구본준 입력 보호회로
TW399337B (en) * 1998-06-09 2000-07-21 Koninkl Philips Electronics Nv Semiconductor device
US20040028675A1 (en) * 2001-12-07 2004-02-12 Zarlink Semiconductor Ab Compositions for the treatment of lupus
GB2388259B (en) * 2002-04-30 2006-03-29 Zarlink Semiconductor Inc Compact high voltage ESD protection diode
DE102004007972B3 (de) * 2004-02-18 2005-09-01 Infineon Technologies Ag Halbleiterstruktur zum Schutz von integrierten Schaltungen vor ESD-Pulsen
US8557657B1 (en) * 2012-05-18 2013-10-15 International Business Machines Corporation Retrograde substrate for deep trench capacitors
US10411086B2 (en) * 2014-04-07 2019-09-10 Semiconductor Components Industries, Llc High voltage capacitor and method

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS468254B1 (sv) * 1967-11-13 1971-03-02
US3739238A (en) * 1969-09-24 1973-06-12 Tokyo Shibaura Electric Co Semiconductor device with a field effect transistor
US3806773A (en) * 1971-07-17 1974-04-23 Sony Corp Field effect transistor having back-to-back diodes connected to the gate electrode and having a protective layer between the source and the diodes to prevent thyristor action
US3787717A (en) * 1971-12-09 1974-01-22 Ibm Over voltage protection circuit lateral bipolar transistor with gated collector junction

Also Published As

Publication number Publication date
JPS52144282A (en) 1977-12-01
GB1555155A (en) 1979-11-07
JPS5519069B2 (sv) 1980-05-23
DE2722892A1 (de) 1977-12-08
US4100561A (en) 1978-07-11

Similar Documents

Publication Publication Date Title
SE7705500L (sv) Skyddsanordning for halvledardon av mos-typ
SE7900337L (sv) Halvledaranordning
GB1359979A (en) Input transient protection for complementary insulated gate field effect transistor integrated circuit device
SE9704149D0 (sv) A semiconductor device of SiC and a transistor of SiC having an insulated gate
IT7922901A0 (it) Dispositivi semiconduttori e circuiti integrati.
SE7507080L (sv) Halvledaranordning
SE7507147L (sv) Felteffekttransistordon.
FR1420391A (fr) Circuit intégré comportant un transistor unipolaire et un transistor bipolaire
JPS51139281A (en) Semi-conductor device
IT1083985B (it) Dispositivo di protezione per transistor specialmente per transistor di circuito integrato monolitico e transistor munito di un tale dispositivo
KR940006258A (ko) 반도체장치 및 고체촬상장치의 수평레지스터
JPS54136278A (en) Semiconductor device
SE8000492L (sv) Overstromskyddskrets for effekttransistorer
JPS5679463A (en) Semiconductor integrated circuit
NL185591C (nl) Werkwijze voor het vervaardigen van een geintegreerde halfgeleiderschakeling van tenminste een veldeffecttransistor met een geisoleerde poortelektrode van een eerste soort en van tenminste een veldeffecttransistor met een geisoleerde poortelektrode van de voor de eerste soort complementaire tweede soort.
JPS5275187A (en) Mos type semiconductor device
JPS5289477A (en) Input protecting circuit
JPS5369589A (en) Insulating gate type field effect transistor with protective device
JPS5619656A (en) Semiconductor ic
BE605231A (fr) Circuits oscillateurs à transistors.
JPS5275987A (en) Gate protecting device
IT1079501B (it) Dispositivo a circuito integrato includente ransistori ad effetto di campo a porta isolata sia a canale n sia a canale p
JPS5619657A (en) Semiconductor ic
FR1304388A (fr) Circuit de charge à transistors
JPS51139273A (en) Mis device

Legal Events

Date Code Title Description
NAV Patent application has lapsed

Ref document number: 7705500-2

Format of ref document f/p: F