SE456624B - Forfarande for tillverkning av solceller - Google Patents

Forfarande for tillverkning av solceller

Info

Publication number: SE456624B
Authority: SE; Sweden
Prior art keywords: nickel; layer; substrate; coating; metals
Prior art date: 1983-12-19

Application number

SE8503833A

Other languages

English (en)

Swedish (sv)

Other versions

SE8503833L (sv

SE8503833D0 (sv

Inventor

D A Yates

Original Assignee

Mobil Solar Energy Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1983-12-19

Filing date

1985-08-16

Publication date

1988-10-17

1984-12-13 Priority claimed from US06/681,003 external-priority patent/US4609565A/en

1985-08-16 Application filed by Mobil Solar Energy Corp filed Critical Mobil Solar Energy Corp

1985-08-16 Publication of SE8503833L publication Critical patent/SE8503833L/xx

1985-08-16 Publication of SE8503833D0 publication Critical patent/SE8503833D0/xx

1988-10-17 Publication of SE456624B publication Critical patent/SE456624B/sv

Links

238000000034 method Methods 0.000 title claims description 37
238000004519 manufacturing process Methods 0.000 title claims description 11
PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 98
239000010410 layer Substances 0.000 claims description 62
229910052759 nickel Inorganic materials 0.000 claims description 49
239000000758 substrate Substances 0.000 claims description 48
238000007747 plating Methods 0.000 claims description 35
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 31
229910052710 silicon Inorganic materials 0.000 claims description 31
239000010703 silicon Substances 0.000 claims description 31
229910052751 metal Inorganic materials 0.000 claims description 19
239000002184 metal Substances 0.000 claims description 19
238000007654 immersion Methods 0.000 claims description 17
230000008569 process Effects 0.000 claims description 13
RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 9
229910052802 copper Inorganic materials 0.000 claims description 9
239000010949 copper Substances 0.000 claims description 9
239000000463 material Substances 0.000 claims description 9
150000002739 metals Chemical class 0.000 claims description 9
238000001465 metallisation Methods 0.000 claims description 8
239000002344 surface layer Substances 0.000 claims description 8
238000010884 ion-beam technique Methods 0.000 claims description 5
KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 4
238000009713 electroplating Methods 0.000 claims description 4
BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 4
239000006117 anti-reflective coating Substances 0.000 claims description 3
-1 fluoride ions Chemical class 0.000 claims description 3
GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 claims description 3
229910017052 cobalt Inorganic materials 0.000 claims description 2
239000010941 cobalt Substances 0.000 claims description 2
GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 2
229910052763 palladium Inorganic materials 0.000 claims description 2
229910052697 platinum Inorganic materials 0.000 claims description 2
229910052703 rhodium Inorganic materials 0.000 claims description 2
239000010948 rhodium Substances 0.000 claims description 2
MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims description 2
239000011248 coating agent Substances 0.000 claims 6
238000000576 coating method Methods 0.000 claims 6
150000002815 nickel Chemical class 0.000 claims 1
239000004065 semiconductor Substances 0.000 claims 1
238000002161 passivation Methods 0.000 description 33
229910052739 hydrogen Inorganic materials 0.000 description 24
239000001257 hydrogen Substances 0.000 description 24
UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 23
230000007704 transition Effects 0.000 description 12
229910021334 nickel silicide Inorganic materials 0.000 description 9
RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 description 9
238000005245 sintering Methods 0.000 description 7
OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 6
XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
150000002500 ions Chemical class 0.000 description 6
238000011282 treatment Methods 0.000 description 6
229910052782 aluminium Inorganic materials 0.000 description 5
239000010953 base metal Substances 0.000 description 5
229910021332 silicide Inorganic materials 0.000 description 5
238000001816 cooling Methods 0.000 description 4
229910002804 graphite Inorganic materials 0.000 description 4
239000010439 graphite Substances 0.000 description 4
229910000838 Al alloy Inorganic materials 0.000 description 3
NPXOKRUENSOPAO-UHFFFAOYSA-N Raney nickel Chemical compound [Al].[Ni] NPXOKRUENSOPAO-UHFFFAOYSA-N 0.000 description 3
239000003795 chemical substances by application Substances 0.000 description 3
238000009792 diffusion process Methods 0.000 description 3
238000005530 etching Methods 0.000 description 3
238000010438 heat treatment Methods 0.000 description 3
230000000873 masking effect Effects 0.000 description 3
FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 3
IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
238000005231 Edge Defined Film Fed Growth Methods 0.000 description 2
GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
239000000853 adhesive Substances 0.000 description 2
230000001070 adhesive effect Effects 0.000 description 2
230000004888 barrier function Effects 0.000 description 2
230000015572 biosynthetic process Effects 0.000 description 2
229910052799 carbon Inorganic materials 0.000 description 2
239000003638 chemical reducing agent Substances 0.000 description 2
238000005229 chemical vapour deposition Methods 0.000 description 2
238000000151 deposition Methods 0.000 description 2
230000008021 deposition Effects 0.000 description 2
230000000694 effects Effects 0.000 description 2
230000005684 electric field Effects 0.000 description 2
229930195733 hydrocarbon Natural products 0.000 description 2
150000002430 hydrocarbons Chemical class 0.000 description 2
230000005012 migration Effects 0.000 description 2
238000013508 migration Methods 0.000 description 2
229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 1
239000004215 Carbon black (E152) Substances 0.000 description 1
229910005487 Ni2Si Inorganic materials 0.000 description 1
229910005883 NiSi Inorganic materials 0.000 description 1
229910012990 NiSi2 Inorganic materials 0.000 description 1
GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
NHWNVPNZGGXQQV-UHFFFAOYSA-J [Si+4].[O-]N=O.[O-]N=O.[O-]N=O.[O-]N=O Chemical group [Si+4].[O-]N=O.[O-]N=O.[O-]N=O.[O-]N=O NHWNVPNZGGXQQV-UHFFFAOYSA-J 0.000 description 1
XMIJDTGORVPYLW-UHFFFAOYSA-N [SiH2] Chemical compound [SiH2] XMIJDTGORVPYLW-UHFFFAOYSA-N 0.000 description 1
230000001133 acceleration Effects 0.000 description 1
230000009471 action Effects 0.000 description 1
230000003213 activating effect Effects 0.000 description 1
238000001994 activation Methods 0.000 description 1
239000012190 activator Substances 0.000 description 1
230000002411 adverse Effects 0.000 description 1
229910045601 alloy Inorganic materials 0.000 description 1
239000000956 alloy Substances 0.000 description 1
238000005275 alloying Methods 0.000 description 1
WUOACPNHFRMFPN-UHFFFAOYSA-N alpha-terpineol Chemical compound CC1=CCC(C(C)(C)O)CC1 WUOACPNHFRMFPN-UHFFFAOYSA-N 0.000 description 1
230000003667 anti-reflective effect Effects 0.000 description 1
239000012298 atmosphere Substances 0.000 description 1
229910052728 basic metal Inorganic materials 0.000 description 1
150000003818 basic metals Chemical class 0.000 description 1
239000011203 carbon fibre reinforced carbon Substances 0.000 description 1
230000008859 change Effects 0.000 description 1
239000002826 coolant Substances 0.000 description 1
239000013078 crystal Substances 0.000 description 1
229910021419 crystalline silicon Inorganic materials 0.000 description 1
SQIFACVGCPWBQZ-UHFFFAOYSA-N delta-terpineol Natural products CC(C)(O)C1CCC(=C)CC1 SQIFACVGCPWBQZ-UHFFFAOYSA-N 0.000 description 1
238000006073 displacement reaction Methods 0.000 description 1
238000009826 distribution Methods 0.000 description 1
238000001035 drying Methods 0.000 description 1
238000010894 electron beam technology Methods 0.000 description 1
238000005516 engineering process Methods 0.000 description 1
238000001704 evaporation Methods 0.000 description 1
230000008020 evaporation Effects 0.000 description 1
230000004907 flux Effects 0.000 description 1
239000007789 gas Substances 0.000 description 1
FDWREHZXQUYJFJ-UHFFFAOYSA-M gold monochloride Chemical compound [Cl-].[Au+] FDWREHZXQUYJFJ-UHFFFAOYSA-M 0.000 description 1
239000011159 matrix material Substances 0.000 description 1
LGQLOGILCSXPEA-UHFFFAOYSA-L nickel sulfate Chemical compound [Ni+2].[O-]S([O-])(=O)=O LGQLOGILCSXPEA-UHFFFAOYSA-L 0.000 description 1
229910017604 nitric acid Inorganic materials 0.000 description 1
229910052757 nitrogen Inorganic materials 0.000 description 1
239000012299 nitrogen atmosphere Substances 0.000 description 1
230000003647 oxidation Effects 0.000 description 1
238000007254 oxidation reaction Methods 0.000 description 1
229910052698 phosphorus Inorganic materials 0.000 description 1
239000011574 phosphorus Substances 0.000 description 1
238000000206 photolithography Methods 0.000 description 1
238000005240 physical vapour deposition Methods 0.000 description 1
CLSUSRZJUQMOHH-UHFFFAOYSA-L platinum dichloride Chemical compound Cl[Pt]Cl CLSUSRZJUQMOHH-UHFFFAOYSA-L 0.000 description 1
229920005591 polysilicon Polymers 0.000 description 1
230000006798 recombination Effects 0.000 description 1
238000005215 recombination Methods 0.000 description 1
230000000630 rising effect Effects 0.000 description 1
229910000679 solder Inorganic materials 0.000 description 1
239000000126 substance Substances 0.000 description 1
230000003746 surface roughness Effects 0.000 description 1
229940116411 terpineol Drugs 0.000 description 1
238000004506 ultrasonic cleaning Methods 0.000 description 1

Classifications

- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

Engineering & Computer Science (AREA)
Chemical & Material Sciences (AREA)
Power Engineering (AREA)
Microelectronics & Electronic Packaging (AREA)
Physics & Mathematics (AREA)
Condensed Matter Physics & Semiconductors (AREA)
Electromagnetism (AREA)
General Physics & Mathematics (AREA)
Computer Hardware Design (AREA)
Manufacturing & Machinery (AREA)
Life Sciences & Earth Sciences (AREA)
Sustainable Energy (AREA)
Sustainable Development (AREA)
Chemical Kinetics & Catalysis (AREA)
Materials Engineering (AREA)
Mechanical Engineering (AREA)
Metallurgy (AREA)
Organic Chemistry (AREA)
Photovoltaic Devices (AREA)
Electrodes Of Semiconductors (AREA)
Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Electroplating Methods And Accessories (AREA)

SE8503833A 1983-12-19 1985-08-16 Forfarande for tillverkning av solceller SE456624B (sv)

Applications Claiming Priority (3)

Application Number	Priority Date	Filing Date	Title
US56306183A	1983-12-19	1983-12-19
US65927984A	1984-10-10	1984-10-10
US06/681,003 US4609565A (en)	1984-10-10	1984-12-13	Method of fabricating solar cells

Publications (3)

Publication Number	Publication Date
SE8503833L SE8503833L (sv)	1985-08-16
SE8503833D0 SE8503833D0 (sv)	1985-08-16
SE456624B true SE456624B (sv)	1988-10-17

Family

ID=27415903

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
SE8503833A SE456624B (sv)	1983-12-19	1985-08-16	Forfarande for tillverkning av solceller

Country Status (9)

Country	Link
EP (1)	EP0167589A4 (nl)
JP (1)	JPS61500756A (nl)
AU (1)	AU574761B2 (nl)
CH (1)	CH669476A5 (nl)
DE (1)	DE3490612T1 (nl)
GB (1)	GB2162996B (nl)
NL (1)	NL8420338A (nl)
SE (1)	SE456624B (nl)
WO (1)	WO1985002939A1 (nl)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
DE3490600T1 (de) *	1983-12-19	1985-11-28	Mobil Solar Energy Corp., Waltham, Mass.	Verfahren zur Herstellung von Solarzellen
US4650695A (en) *	1985-05-13	1987-03-17	Mobil Solar Energy Corporation	Method of fabricating solar cells
NL2009382C2 (en)	2012-08-29	2014-03-18	M4Si B V	Method for manufacturing a solar cell and solar cell obtained therewith.

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US4004044A (en) *	1975-05-09	1977-01-18	International Business Machines Corporation	Method for forming patterned films utilizing a transparent lift-off mask
US4347264A (en) *	1975-09-18	1982-08-31	Solarex Corporation	Method of applying contacts to a silicon wafer and product formed thereby
US4152824A (en) *	1977-12-30	1979-05-08	Mobil Tyco Solar Energy Corporation	Manufacture of solar cells
US4214966A (en) *	1979-03-20	1980-07-29	Bell Telephone Laboratories, Incorporated	Process useful in the fabrication of articles with metallized surfaces
US4224084A (en) *	1979-04-16	1980-09-23	Rca Corporation	Method and structure for passivating a semiconductor device
US4289381A (en) *	1979-07-02	1981-09-15	Hughes Aircraft Company	High selectivity thin film polarizer
US4261762A (en) *	1979-09-14	1981-04-14	Eaton Corporation	Method for conducting heat to or from an article being treated under vacuum
JPS6059994B2 (ja) *	1979-10-09	1985-12-27	三菱電機株式会社	アルミニウム膜またはアルミニウム合金膜の微細パタ−ン形成方法
US4343830A (en) *	1980-11-13	1982-08-10	Motorola, Inc.	Method for improving the efficiency of solar cells having imperfections
JPS5821324A (ja) *	1981-07-30	1983-02-08	Agency Of Ind Science & Technol	水素添加した半導体薄膜成長用金属表面基板の前処理方法
CH668861A5 (de) *	1983-12-19	1989-01-31	Mobil Solar Energy Corp	Verfahren zur herstellung von festkoerper-halbleiter-vorrichtungen.
DE3490600T1 (de) *	1983-12-19	1985-11-28	Mobil Solar Energy Corp., Waltham, Mass.	Verfahren zur Herstellung von Solarzellen

1984
- 1984-12-14 AU AU38886/85A patent/AU574761B2/en not_active Ceased
- 1984-12-14 WO PCT/US1984/002065 patent/WO1985002939A1/en not_active Application Discontinuation
- 1984-12-14 GB GB08515901A patent/GB2162996B/en not_active Expired
- 1984-12-14 NL NL8420338A patent/NL8420338A/nl unknown
- 1984-12-14 JP JP85500715A patent/JPS61500756A/ja active Pending
- 1984-12-14 DE DE19843490612 patent/DE3490612T1/de not_active Withdrawn
- 1984-12-14 EP EP19850900535 patent/EP0167589A4/en not_active Withdrawn
1985
- 1985-08-16 SE SE8503833A patent/SE456624B/sv not_active IP Right Cessation
- 1985-12-14 CH CH3598/85A patent/CH669476A5/de not_active IP Right Cessation

Also Published As

Publication number	Publication date
GB2162996B (en)	1987-08-12
WO1985002939A1 (en)	1985-07-04
NL8420338A (nl)	1985-11-01
SE8503833L (sv)	1985-08-16
GB8515901D0 (en)	1985-07-24
EP0167589A4 (en)	1989-01-19
CH669476A5 (nl)	1989-03-15
AU574761B2 (en)	1988-07-14
GB2162996A (en)	1986-02-12
SE8503833D0 (sv)	1985-08-16
JPS61500756A (ja)	1986-04-17
EP0167589A1 (en)	1986-01-15
AU3888685A (en)	1985-07-12
DE3490612T1 (de)	1985-11-28

Legal Events

Date

Code

Title

Description

1995-01-31

NUG

Patent has lapsed

Ref document number: 8503833-9

Effective date: 19910704

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Publication	Publication Date	Title
US4557037A (en)	1985-12-10	Method of fabricating solar cells
US4612698A (en)	1986-09-23	Method of fabricating solar cells
US5011567A (en)	1991-04-30	Method of fabricating solar cells
US4320251A (en)	1982-03-16	Ohmic contacts for solar cells by arc plasma spraying
JP4335668B2 (ja)	2009-09-30	太陽電池の製造方法
US4239810A (en)	1980-12-16	Method of making silicon photovoltaic cells
US4321283A (en)	1982-03-23	Nickel plating method
US4609565A (en)	1986-09-02	Method of fabricating solar cells
JPH0520914B2 (nl)	1993-03-22
WO1995012898A1 (en)	1995-05-11	High efficiency silicon solar cells and methods of fabrication
TW200828610A (en)	2008-07-01	Pulse plating of a low stress film on a solar cell substrate
JPH02500397A (ja)	1990-02-08	反射防止被膜を有する太陽電池の製造方法
SE456624B (sv)	1988-10-17	Forfarande for tillverkning av solceller
SE456625B (sv)	1988-10-17	Sett att tillverka solceller
US4650695A (en)	1987-03-17	Method of fabricating solar cells
AU573696B2 (en)	1988-06-16	Ion milling
JP2024502932A (ja)	2024-01-24	バックコンタクト型太陽電池及びその製造
Vitanov et al.	1996	Low cost multilayer metallization system for silicon solar cells
JPS61500757A (ja)	1986-04-17	太陽電池の製造方法
Iles et al.	1979	Development of low cost contacts to silicon solar cells. Semi-annual report, 15 Octobr 1978--31 May 1979
Cocorullo et al.	1984	High reliability nickel electroless metallization of solar cells
GB2107741A (en)	1983-05-05	Electroless plating of nickel onto silicon
CN115376896A (zh)	2022-11-22	碳化硅晶片及其退火激活方法
JPS61500755A (ja)	1986-04-17	太陽電池の製造方法
KR870000768A (ko)	1987-02-20	태양전지의 제조방법