SE319836B - - Google Patents
Info
- Publication number
- SE319836B SE319836B SE4213/66A SE421366A SE319836B SE 319836 B SE319836 B SE 319836B SE 4213/66 A SE4213/66 A SE 4213/66A SE 421366 A SE421366 A SE 421366A SE 319836 B SE319836 B SE 319836B
- Authority
- SE
- Sweden
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/4824—Pads with extended contours, e.g. grid structure, branch structure, finger structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66272—Silicon vertical transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US446780A US3398335A (en) | 1965-03-31 | 1965-03-31 | Transistor structure with an emitter region epitaxially grown over the base region |
US73418568A | 1968-03-18 | 1968-03-18 |
Publications (1)
Publication Number | Publication Date |
---|---|
SE319836B true SE319836B (sv) | 1970-01-26 |
Family
ID=27034741
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SE4213/66A SE319836B (sv) | 1965-03-31 | 1966-03-30 |
Country Status (6)
Country | Link |
---|---|
US (1) | US3579814A (sv) |
CH (1) | CH446537A (sv) |
DE (1) | DE1564136C3 (sv) |
GB (1) | GB1061506A (sv) |
NL (1) | NL6602298A (sv) |
SE (1) | SE319836B (sv) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3742490A (en) * | 1970-10-12 | 1973-06-26 | H Henderson | Display system having flexible gear |
JPS53132275A (en) * | 1977-04-25 | 1978-11-17 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor device and its production |
US5059544A (en) * | 1988-07-14 | 1991-10-22 | International Business Machines Corp. | Method of forming bipolar transistor having self-aligned emitter-base using selective and non-selective epitaxy |
US5688474A (en) * | 1993-06-01 | 1997-11-18 | Eduardo E. Wolf | Device for treating gases using microfabricated matrix of catalyst |
CN108155098B (zh) * | 2017-12-21 | 2020-08-18 | 安徽安芯电子科技股份有限公司 | 双极晶体管的制作方法 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3189973A (en) * | 1961-11-27 | 1965-06-22 | Bell Telephone Labor Inc | Method of fabricating a semiconductor device |
BE636317A (sv) * | 1962-08-23 | 1900-01-01 | ||
US3237271A (en) * | 1963-08-07 | 1966-03-01 | Bell Telephone Labor Inc | Method of fabricating semiconductor devices |
-
1966
- 1966-01-28 GB GB3856/66A patent/GB1061506A/en not_active Expired
- 1966-02-23 NL NL6602298A patent/NL6602298A/xx unknown
- 1966-03-24 DE DE1564136A patent/DE1564136C3/de not_active Expired
- 1966-03-28 CH CH441766A patent/CH446537A/de unknown
- 1966-03-30 SE SE4213/66A patent/SE319836B/xx unknown
-
1968
- 1968-03-18 US US734185*A patent/US3579814A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
DE1564136B2 (de) | 1974-04-04 |
GB1061506A (en) | 1967-03-15 |
DE1564136C3 (de) | 1974-10-31 |
DE1564136A1 (de) | 1969-09-25 |
NL6602298A (sv) | 1966-10-03 |
CH446537A (de) | 1967-11-15 |
US3579814A (en) | 1971-05-25 |