CN108155098B - 双极晶体管的制作方法 - Google Patents
双极晶体管的制作方法 Download PDFInfo
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- CN108155098B CN108155098B CN201711396250.1A CN201711396250A CN108155098B CN 108155098 B CN108155098 B CN 108155098B CN 201711396250 A CN201711396250 A CN 201711396250A CN 108155098 B CN108155098 B CN 108155098B
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 28
- 238000000034 method Methods 0.000 title claims description 17
- 239000010410 layer Substances 0.000 claims abstract description 152
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 71
- 229920005591 polysilicon Polymers 0.000 claims abstract description 43
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 25
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 25
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 19
- 239000011241 protective layer Substances 0.000 claims abstract description 10
- 239000000463 material Substances 0.000 claims abstract description 9
- 238000001039 wet etching Methods 0.000 claims abstract description 5
- 230000001681 protective effect Effects 0.000 claims abstract description 4
- 238000002955 isolation Methods 0.000 claims description 35
- 230000000149 penetrating effect Effects 0.000 claims description 24
- 239000000758 substrate Substances 0.000 claims description 15
- 238000005530 etching Methods 0.000 claims description 12
- 239000000945 filler Substances 0.000 claims description 6
- 238000009792 diffusion process Methods 0.000 claims description 5
- 230000003647 oxidation Effects 0.000 claims description 4
- 238000007254 oxidation reaction Methods 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- 239000011159 matrix material Substances 0.000 claims description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 238000002347 injection Methods 0.000 claims description 2
- 239000007924 injection Substances 0.000 claims description 2
- 238000009740 moulding (composite fabrication) Methods 0.000 claims description 2
- 238000001259 photo etching Methods 0.000 claims description 2
- 238000009413 insulation Methods 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000003321 amplification Effects 0.000 description 3
- 238000003199 nucleic acid amplification method Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Transistors (AREA)
Abstract
Description
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201711396250.1A CN108155098B (zh) | 2017-12-21 | 2017-12-21 | 双极晶体管的制作方法 |
Applications Claiming Priority (1)
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CN201711396250.1A CN108155098B (zh) | 2017-12-21 | 2017-12-21 | 双极晶体管的制作方法 |
Publications (2)
Publication Number | Publication Date |
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CN108155098A CN108155098A (zh) | 2018-06-12 |
CN108155098B true CN108155098B (zh) | 2020-08-18 |
Family
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CN201711396250.1A Active CN108155098B (zh) | 2017-12-21 | 2017-12-21 | 双极晶体管的制作方法 |
Country Status (1)
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CN (1) | CN108155098B (zh) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN111430447B (zh) * | 2019-02-25 | 2023-02-28 | 合肥晶合集成电路股份有限公司 | 电流源及其形成方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3551760A (en) * | 1966-03-28 | 1970-12-29 | Hitachi Ltd | Semiconductor device with an inversion preventing layer formed in a diffused region |
US3579814A (en) * | 1965-03-31 | 1971-05-25 | Ibm | Method for fabricating a semiconductor device having an epitaxially grown region |
US20160104770A1 (en) * | 2014-09-16 | 2016-04-14 | Globalfoundries Inc. | Profile control over a collector of a bipolar junction transistor |
CN105870166A (zh) * | 2016-04-22 | 2016-08-17 | 杭州立昂东芯微电子有限公司 | 一种铟镓磷异质结双极型晶体管及其制造方法 |
-
2017
- 2017-12-21 CN CN201711396250.1A patent/CN108155098B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3579814A (en) * | 1965-03-31 | 1971-05-25 | Ibm | Method for fabricating a semiconductor device having an epitaxially grown region |
US3551760A (en) * | 1966-03-28 | 1970-12-29 | Hitachi Ltd | Semiconductor device with an inversion preventing layer formed in a diffused region |
US20160104770A1 (en) * | 2014-09-16 | 2016-04-14 | Globalfoundries Inc. | Profile control over a collector of a bipolar junction transistor |
CN105870166A (zh) * | 2016-04-22 | 2016-08-17 | 杭州立昂东芯微电子有限公司 | 一种铟镓磷异质结双极型晶体管及其制造方法 |
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CN108155098A (zh) | 2018-06-12 |
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CB03 | Change of inventor or designer information | ||
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Inventor after: Request for anonymity Inventor before: Request for anonymity |
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TA01 | Transfer of patent application right | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20200713 Address after: 247100 Fuan Electronic Information Industry Park 10, Chizhou economic and Technological Development Zone, Anhui Applicant after: ANHUI ANXIN ELECTRONIC TECHNOLOGY Co.,Ltd. Address before: 518000 Guangdong city of Shenzhen province Baoan District Fuyong Street Peace community Junfeng Industrial Zone A3 building the first floor Applicant before: SHENZHEN JINGTE SMART MANUFACTURING TECHNOLOGY Co.,Ltd. |
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GR01 | Patent grant | ||
GR01 | Patent grant | ||
PE01 | Entry into force of the registration of the contract for pledge of patent right | ||
PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of invention: The manufacturing method of bipolar transistors Granted publication date: 20200818 Pledgee: China Co. truction Bank Corp Chizhou branch Pledgor: ANHUI ANXIN ELECTRONIC TECHNOLOGY CO.,LTD. Registration number: Y2024980003211 |