SE0801620L - Metoder för tillverkning av en startsubstratskiva för halvledartillverkning, med skivgenomgående anslutningar - Google Patents

Metoder för tillverkning av en startsubstratskiva för halvledartillverkning, med skivgenomgående anslutningar

Info

Publication number
SE0801620L
SE0801620L SE0801620A SE0801620A SE0801620L SE 0801620 L SE0801620 L SE 0801620L SE 0801620 A SE0801620 A SE 0801620A SE 0801620 A SE0801620 A SE 0801620A SE 0801620 L SE0801620 L SE 0801620L
Authority
SE
Sweden
Prior art keywords
wafer
connections
disk
manufacturing
low resistivity
Prior art date
Application number
SE0801620A
Other languages
English (en)
Other versions
SE533308C2 (sv
Inventor
Edvard Kaelvesten
Tomas Bauer
Thorbjoern Ebefors
Original Assignee
Silex Microsystems Ab
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Silex Microsystems Ab filed Critical Silex Microsystems Ab
Priority to SE0801620A priority Critical patent/SE533308C2/sv
Publication of SE0801620L publication Critical patent/SE0801620L/sv
Publication of SE533308C2 publication Critical patent/SE533308C2/sv

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
    • H—ELECTRICITY
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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49827—Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
    • H—ELECTRICITY
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    • H01L23/00—Details of semiconductor or other solid state devices
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    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49866—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials
    • H01L23/49872—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials the conductive materials containing semiconductor material
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    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53271—Conductive materials containing semiconductor material, e.g. polysilicon
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    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
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    • H01L2224/48237—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a die pad of the item
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    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
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    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
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    • H01L2924/19101—Disposition of discrete passive components
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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Weting (AREA)
SE0801620A 2006-02-01 2007-01-31 Metoder för tillverkning av en startsubstratskiva för halvledartillverkning, med skivgenomgående anslutningar SE533308C2 (sv)

Priority Applications (1)

Application Number Priority Date Filing Date Title
SE0801620A SE533308C2 (sv) 2006-02-01 2007-01-31 Metoder för tillverkning av en startsubstratskiva för halvledartillverkning, med skivgenomgående anslutningar

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
SE0600214 2006-02-01
SE0801620A SE533308C2 (sv) 2006-02-01 2007-01-31 Metoder för tillverkning av en startsubstratskiva för halvledartillverkning, med skivgenomgående anslutningar
PCT/SE2007/050053 WO2007089207A1 (en) 2006-02-01 2007-01-31 Methods for making a starting substrate wafer for semiconductor engineering having wafer through connections

Publications (2)

Publication Number Publication Date
SE0801620L true SE0801620L (sv) 2008-10-30
SE533308C2 SE533308C2 (sv) 2010-08-24

Family

ID=38327689

Family Applications (2)

Application Number Title Priority Date Filing Date
SE1050461A SE1050461A1 (sv) 2006-02-01 2007-01-31 Metoder för tillverkning av en startsubstratskiva för halvledartillverkning, med skivgenomgående anslutningar
SE0801620A SE533308C2 (sv) 2006-02-01 2007-01-31 Metoder för tillverkning av en startsubstratskiva för halvledartillverkning, med skivgenomgående anslutningar

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SE1050461A SE1050461A1 (sv) 2006-02-01 2007-01-31 Metoder för tillverkning av en startsubstratskiva för halvledartillverkning, med skivgenomgående anslutningar

Country Status (5)

Country Link
US (2) US9312217B2 (sv)
EP (2) EP2005467B1 (sv)
AT (1) ATE511703T1 (sv)
SE (2) SE1050461A1 (sv)
WO (2) WO2007089206A1 (sv)

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SE534510C2 (sv) 2008-11-19 2011-09-13 Silex Microsystems Ab Funktionell inkapsling
US8630033B2 (en) 2008-12-23 2014-01-14 Silex Microsystems Ab Via structure and method thereof
US8729713B2 (en) 2008-12-23 2014-05-20 Silex Microsystems Ab Via structure and method thereof
SE533992C2 (sv) 2008-12-23 2011-03-22 Silex Microsystems Ab Elektrisk anslutning i en struktur med isolerande och ledande lager
US8426233B1 (en) 2009-01-09 2013-04-23 Integrated Device Technology, Inc. Methods of packaging microelectromechanical resonators
TW201032389A (en) * 2009-02-20 2010-09-01 Aiconn Technology Corp Wireless transceiver module
US8053898B2 (en) * 2009-10-05 2011-11-08 Samsung Electronics Co., Ltd. Connection for off-chip electrostatic discharge protection
NO20093601A1 (no) 2009-12-29 2011-06-30 Idex Asa Overflatesensor
DE102010029760B4 (de) 2010-06-07 2019-02-21 Robert Bosch Gmbh Bauelement mit einer Durchkontaktierung und Verfahren zu seiner Herstellung
WO2012069078A1 (de) * 2010-11-23 2012-05-31 Robert Bosch Gmbh Eutektische bondung von dünnchips auf einem trägersubstrat
SE536530C2 (sv) * 2011-04-21 2014-02-04 Silex Microsystems Ab Startsubstrat för halvledarteknologi med substratgenomgåendekopplingar och en metod för tillverkning därav
US8803269B2 (en) * 2011-05-05 2014-08-12 Cisco Technology, Inc. Wafer scale packaging platform for transceivers
US8575000B2 (en) * 2011-07-19 2013-11-05 SanDisk Technologies, Inc. Copper interconnects separated by air gaps and method of making thereof
US9029259B2 (en) * 2012-02-17 2015-05-12 Teledyne Scientific & Imaging, Llc Self-aligning hybridization method
SE538069C2 (sv) 2012-03-12 2016-02-23 Silex Microsystems Ab Metod att tillverka tätpackade viastrukturer med routing iplanet
SE538058C2 (sv) 2012-03-30 2016-02-23 Silex Microsystems Ab Metod att tillhandahålla ett viahål och en routing-struktur
US9102517B2 (en) 2012-08-22 2015-08-11 International Business Machines Corporation Semiconductor structures provided within a cavity and related design structures
SE538062C2 (sv) 2012-09-27 2016-02-23 Silex Microsystems Ab Kemiskt pläterad metallvia genom kisel
DE102013208816A1 (de) 2013-05-14 2014-11-20 Robert Bosch Gmbh Verfahren zum Erzeugen eines Durchkontakts in einem CMOS-Substrat
KR102245134B1 (ko) 2014-04-18 2021-04-28 삼성전자 주식회사 반도체 칩을 구비하는 반도체 패키지
WO2023129537A2 (en) * 2021-12-28 2023-07-06 Medtronic, Inc. Electrical component and method of forming same
WO2023129538A1 (en) * 2021-12-28 2023-07-06 Medtronic, Inc. Electrical component and method of forming same

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EP2005467A4 (en) 2011-05-18
US20100052107A1 (en) 2010-03-04
SE1050461A1 (sv) 2010-05-10
SE533308C2 (sv) 2010-08-24
EP2005467B1 (en) 2018-07-11
WO2007089207A1 (en) 2007-08-09
US20090195948A1 (en) 2009-08-06
EP1987535A1 (en) 2008-11-05
US9312217B2 (en) 2016-04-12
WO2007089206A1 (en) 2007-08-09
ATE511703T1 (de) 2011-06-15
EP1987535B1 (en) 2011-06-01
EP2005467A1 (en) 2008-12-24
US8324103B2 (en) 2012-12-04

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