SE0001860D0 - A semiconductor device - Google Patents
A semiconductor deviceInfo
- Publication number
- SE0001860D0 SE0001860D0 SE0001860A SE0001860A SE0001860D0 SE 0001860 D0 SE0001860 D0 SE 0001860D0 SE 0001860 A SE0001860 A SE 0001860A SE 0001860 A SE0001860 A SE 0001860A SE 0001860 D0 SE0001860 D0 SE 0001860D0
- Authority
- SE
- Sweden
- Prior art keywords
- layer
- doped
- dopants
- electric field
- semiconductor
- Prior art date
Links
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SE0001860A SE0001860D0 (sv) | 2000-05-22 | 2000-05-22 | A semiconductor device |
AU2001260938A AU2001260938A1 (en) | 2000-05-22 | 2001-05-22 | A semiconductor device |
PCT/SE2001/001167 WO2001091187A1 (en) | 2000-05-22 | 2001-05-22 | A semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SE0001860A SE0001860D0 (sv) | 2000-05-22 | 2000-05-22 | A semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
SE0001860D0 true SE0001860D0 (sv) | 2000-05-22 |
Family
ID=20279743
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SE0001860A SE0001860D0 (sv) | 2000-05-22 | 2000-05-22 | A semiconductor device |
Country Status (3)
Country | Link |
---|---|
AU (1) | AU2001260938A1 (sv) |
SE (1) | SE0001860D0 (sv) |
WO (1) | WO2001091187A1 (sv) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5060297B2 (ja) | 2004-09-10 | 2012-10-31 | エレメント シックス リミテッド | スイッチング装置 |
CN102790077B (zh) * | 2012-08-24 | 2014-12-10 | 电子科技大学 | 一种绝缘栅双极型晶体管 |
JP6873926B2 (ja) * | 2015-06-09 | 2021-05-19 | アーベーベー・シュバイツ・アーゲーABB Schweiz AG | 炭化ケイ素パワー半導体デバイスのエッジ終端部を製造する方法 |
TWI594443B (zh) * | 2016-08-29 | 2017-08-01 | 雋佾科技有限公司 | 蕭特基二極體結構及蕭特基二極體結構之形成方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4783688A (en) * | 1981-12-02 | 1988-11-08 | U.S. Philips Corporation | Schottky barrier field effect transistors |
US5027166A (en) * | 1987-12-04 | 1991-06-25 | Sanken Electric Co., Ltd. | High voltage, high speed Schottky semiconductor device and method of fabrication |
US5166760A (en) * | 1990-02-28 | 1992-11-24 | Hitachi, Ltd. | Semiconductor Schottky barrier device with pn junctions |
SE9700156D0 (sv) * | 1997-01-21 | 1997-01-21 | Abb Research Ltd | Junction termination for Si C Schottky diode |
-
2000
- 2000-05-22 SE SE0001860A patent/SE0001860D0/sv unknown
-
2001
- 2001-05-22 WO PCT/SE2001/001167 patent/WO2001091187A1/en active Application Filing
- 2001-05-22 AU AU2001260938A patent/AU2001260938A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
AU2001260938A1 (en) | 2001-12-03 |
WO2001091187A1 (en) | 2001-11-29 |
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