SE0001860D0 - A semiconductor device - Google Patents

A semiconductor device

Info

Publication number
SE0001860D0
SE0001860D0 SE0001860A SE0001860A SE0001860D0 SE 0001860 D0 SE0001860 D0 SE 0001860D0 SE 0001860 A SE0001860 A SE 0001860A SE 0001860 A SE0001860 A SE 0001860A SE 0001860 D0 SE0001860 D0 SE 0001860D0
Authority
SE
Sweden
Prior art keywords
layer
doped
dopants
electric field
semiconductor
Prior art date
Application number
SE0001860A
Other languages
Swedish (sv)
Inventor
Olof Hjortstam
Johan Hammersberg
Bo Breitholtz
Original Assignee
Abb Ab
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Abb Ab filed Critical Abb Ab
Priority to SE0001860A priority Critical patent/SE0001860D0/en
Publication of SE0001860D0 publication Critical patent/SE0001860D0/en
Priority to PCT/SE2001/001167 priority patent/WO2001091187A1/en
Priority to AU2001260938A priority patent/AU2001260938A1/en

Links

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

A semiconductor device comprises a first doped semiconductor layer (3, 4) and a metal layer (6) forming a Schottky-barrier contact thereto. The first layer is doped by dopants assuming such deep energy levels in the semiconductor material of said layer that the majority thereof will not be thermally activated at the working temperature of the device. A second layer located close to the first layer is doped with dopants of opposite type to that of the first layer and is continuously activated at said working temperature for concentrating electric field to a region between the second layer (12, 13) and a further layer (5) of the device not being said first layer in a forward blocking state of the device while reducing the electric field in said first layer next to said contact.
SE0001860A 2000-05-22 2000-05-22 A semiconductor device SE0001860D0 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
SE0001860A SE0001860D0 (en) 2000-05-22 2000-05-22 A semiconductor device
PCT/SE2001/001167 WO2001091187A1 (en) 2000-05-22 2001-05-22 A semiconductor device
AU2001260938A AU2001260938A1 (en) 2000-05-22 2001-05-22 A semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE0001860A SE0001860D0 (en) 2000-05-22 2000-05-22 A semiconductor device

Publications (1)

Publication Number Publication Date
SE0001860D0 true SE0001860D0 (en) 2000-05-22

Family

ID=20279743

Family Applications (1)

Application Number Title Priority Date Filing Date
SE0001860A SE0001860D0 (en) 2000-05-22 2000-05-22 A semiconductor device

Country Status (3)

Country Link
AU (1) AU2001260938A1 (en)
SE (1) SE0001860D0 (en)
WO (1) WO2001091187A1 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8053783B2 (en) 2004-09-10 2011-11-08 Element Six Limited Switching device
CN102790077B (en) * 2012-08-24 2014-12-10 电子科技大学 Insulated gate bipolar transistor
WO2016198388A1 (en) * 2015-06-09 2016-12-15 Abb Schweiz Ag Method for manufacturing an edge termination for a silicon carbide power semiconductor device
TWI594443B (en) * 2016-08-29 2017-08-01 雋佾科技有限公司 Shottcky diode structure and method for forming the same

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4783688A (en) * 1981-12-02 1988-11-08 U.S. Philips Corporation Schottky barrier field effect transistors
US5027166A (en) * 1987-12-04 1991-06-25 Sanken Electric Co., Ltd. High voltage, high speed Schottky semiconductor device and method of fabrication
US5166760A (en) * 1990-02-28 1992-11-24 Hitachi, Ltd. Semiconductor Schottky barrier device with pn junctions
SE9700156D0 (en) * 1997-01-21 1997-01-21 Abb Research Ltd Junction termination for Si C Schottky diode

Also Published As

Publication number Publication date
AU2001260938A1 (en) 2001-12-03
WO2001091187A1 (en) 2001-11-29

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