PH27127A - Process for the vapor deposition of polysilanes - Google Patents

Process for the vapor deposition of polysilanes Download PDF

Info

Publication number: PH27127A
Authority: PH; Philippines
Prior art keywords: film; substrate; torr; silicon; trate
Prior art date: 1989-02-15

Application number

PH39885A

Other languages

English (en)

Inventor

David M Dobuzinsky

David V Horak

Steven J Holmes

Original Assignee

Ibm

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1989-02-15

Filing date

1990-01-12

Publication date

1993-03-16

1990-01-12 Application filed by Ibm filed Critical Ibm

1993-03-16 Publication of PH27127A publication Critical patent/PH27127A/en

Links

238000000034 method Methods 0.000 title claims description 32
230000008569 process Effects 0.000 title claims description 24
229920000548 poly(silane) polymer Polymers 0.000 title claims description 17
238000007740 vapor deposition Methods 0.000 title description 3
239000000758 substrate Substances 0.000 claims description 24
239000000178 monomer Substances 0.000 claims description 18
BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 14
229910000077 silane Inorganic materials 0.000 claims description 14
238000000151 deposition Methods 0.000 claims description 9
230000005855 radiation Effects 0.000 claims description 9
VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
239000000203 mixture Substances 0.000 claims description 8
229910052710 silicon Inorganic materials 0.000 claims description 8
239000010703 silicon Substances 0.000 claims description 8
235000012239 silicon dioxide Nutrition 0.000 claims description 5
239000000377 silicon dioxide Substances 0.000 claims description 3
125000000217 alkyl group Chemical group 0.000 description 7
238000006243 chemical reaction Methods 0.000 description 6
229920002120 photoresistant polymer Polymers 0.000 description 6
239000002904 solvent Substances 0.000 description 6
230000008021 deposition Effects 0.000 description 5
235000012431 wafers Nutrition 0.000 description 5
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
125000003118 aryl group Chemical group 0.000 description 4
239000003153 chemical reaction reagent Substances 0.000 description 4
239000011248 coating agent Substances 0.000 description 4
238000000576 coating method Methods 0.000 description 4
239000000463 material Substances 0.000 description 4
229920000642 polymer Polymers 0.000 description 4
125000003342 alkenyl group Chemical group 0.000 description 3
125000003545 alkoxy group Chemical group 0.000 description 3
125000000304 alkynyl group Chemical group 0.000 description 3
238000013459 approach Methods 0.000 description 3
125000005103 alkyl silyl group Chemical group 0.000 description 2
239000003708 ampul Substances 0.000 description 2
230000015572 biosynthetic process Effects 0.000 description 2
PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 2
KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 2
125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 2
239000002243 precursor Substances 0.000 description 2
125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 2
239000010453 quartz Substances 0.000 description 2
239000004065 semiconductor Substances 0.000 description 2
239000004215 Carbon black (E152) Substances 0.000 description 1
239000004971 Cross linker Substances 0.000 description 1
229920001651 Cyanoacrylate Polymers 0.000 description 1
MWCLLHOVUTZFKS-UHFFFAOYSA-N Methyl cyanoacrylate Chemical compound COC(=O)C(=C)C#N MWCLLHOVUTZFKS-UHFFFAOYSA-N 0.000 description 1
229910008045 Si-Si Inorganic materials 0.000 description 1
241000219289 Silene Species 0.000 description 1
229910006411 Si—Si Inorganic materials 0.000 description 1
239000012190 activator Substances 0.000 description 1
230000001464 adherent effect Effects 0.000 description 1
229910052783 alkali metal Inorganic materials 0.000 description 1
150000001340 alkali metals Chemical class 0.000 description 1
230000005540 biological transmission Effects 0.000 description 1
229910052918 calcium silicate Inorganic materials 0.000 description 1
239000003054 catalyst Substances 0.000 description 1
150000001768 cations Chemical class 0.000 description 1
238000012512 characterization method Methods 0.000 description 1
150000001875 compounds Chemical class 0.000 description 1
230000001419 dependent effect Effects 0.000 description 1
238000011161 development Methods 0.000 description 1
230000000694 effects Effects 0.000 description 1
238000001914 filtration Methods 0.000 description 1
125000001153 fluoro group Chemical group F* 0.000 description 1
239000011521 glass Substances 0.000 description 1
125000005843 halogen group Chemical group 0.000 description 1
238000010438 heat treatment Methods 0.000 description 1
229930195733 hydrocarbon Natural products 0.000 description 1
239000012535 impurity Substances 0.000 description 1
229910017053 inorganic salt Inorganic materials 0.000 description 1
239000010410 layer Substances 0.000 description 1
238000004519 manufacturing process Methods 0.000 description 1
238000005259 measurement Methods 0.000 description 1
125000000956 methoxy group Chemical group [H]C([H])([H])O* 0.000 description 1
DWZFNULJNZJRLM-UHFFFAOYSA-N methoxy-dimethyl-trimethylsilylsilane Chemical compound CO[Si](C)(C)[Si](C)(C)C DWZFNULJNZJRLM-UHFFFAOYSA-N 0.000 description 1
125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
230000007935 neutral effect Effects 0.000 description 1
230000003287 optical effect Effects 0.000 description 1
239000002245 particle Substances 0.000 description 1
229920006254 polymer film Polymers 0.000 description 1
238000006116 polymerization reaction Methods 0.000 description 1
238000002360 preparation method Methods 0.000 description 1
238000012545 processing Methods 0.000 description 1
239000011241 protective layer Substances 0.000 description 1
150000003839 salts Chemical class 0.000 description 1
239000007858 starting material Substances 0.000 description 1
125000000026 trimethylsilyl group Chemical group [H]C([H])([H])[Si]([*])(C([H])([H])[H])C([H])([H])[H] 0.000 description 1

Classifications

- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/167—Coating processes; Apparatus therefor from the gas phase, by plasma deposition
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
- G03F7/0754—Non-macromolecular compounds containing silicon-to-silicon bonds

Landscapes

Chemical & Material Sciences (AREA)
Physics & Mathematics (AREA)
Engineering & Computer Science (AREA)
General Physics & Mathematics (AREA)
Chemical Kinetics & Catalysis (AREA)
Materials Engineering (AREA)
Mechanical Engineering (AREA)
Metallurgy (AREA)
Organic Chemistry (AREA)
Spectroscopy & Molecular Physics (AREA)
Plasma & Fusion (AREA)
Thermal Sciences (AREA)
General Chemical & Material Sciences (AREA)
Silicon Polymers (AREA)
Physical Vapour Deposition (AREA)
Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Formation Of Insulating Films (AREA)
Paints Or Removers (AREA)
Chemical Vapour Deposition (AREA)

PH39885A 1989-02-15 1990-01-12 Process for the vapor deposition of polysilanes PH27127A (en)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
US31132689A	1989-02-15	1989-02-15

Publications (1)

Publication Number	Publication Date
PH27127A true PH27127A (en)	1993-03-16

Family

ID=23206394

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
PH39885A PH27127A (en)	1989-02-15	1990-01-12	Process for the vapor deposition of polysilanes

Country Status (12)

Country	Link
EP (1)	EP0382932B1 (zh)
JP (1)	JPH0739629B2 (zh)
KR (1)	KR920005620B1 (zh)
CN (1)	CN1029043C (zh)
AU (1)	AU624467B2 (zh)
BR (1)	BR9000665A (zh)
CA (1)	CA1334911C (zh)
DE (1)	DE68919346T2 (zh)
HK (1)	HK90595A (zh)
MX (1)	MX172109B (zh)
MY (1)	MY110289A (zh)
PH (1)	PH27127A (zh)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPH0643655A (ja) *	1991-03-04	1994-02-18	Internatl Business Mach Corp <Ibm>	レジスト画像の生成プロセス及び電子デバイス
DE4202652C2 (de) *	1992-01-30	1996-03-28	Fraunhofer Ges Forschung	Verfahren zum Aufbringen einer UV- und/oder elektronenstrahlempfindlichen Lackschicht
DE4202651A1 (de) *	1992-01-30	1993-08-05	Fraunhofer Ges Forschung	Verfahren zur trockenentwicklung einer siliziumhaltigen ultraviolett- und/oder elektronenstrahlempfindlichen lackschicht
US5635338A (en) *	1992-04-29	1997-06-03	Lucent Technologies Inc.	Energy sensitive materials and methods for their use
US5439780A (en) *	1992-04-29	1995-08-08	At&T Corp.	Energy sensitive materials and methods for their use
CA2137928C (en)	1992-07-04	2002-01-29	Christopher David Dobson	A method of treating a semiconductor wafer
WO1995006900A1 (fr) *	1993-09-03	1995-03-09	Hitachi, Ltd.	Procede et appareil de realisation de motifs
US5858880A (en) *	1994-05-14	1999-01-12	Trikon Equipment Limited	Method of treating a semi-conductor wafer
DE19781956B4 (de)	1996-08-24	2006-06-14	Trikon Equipments Ltd., Newport	Verfahren zum Aufbringen einer planarisierten dielektrischen Schicht auf einem Halbleitersubstrat
US5885751A (en) *	1996-11-08	1999-03-23	Applied Materials, Inc.	Method and apparatus for depositing deep UV photoresist films
EP1717848A4 (en) *	2004-02-17	2010-03-24	Toagosei Co Ltd	PROCESS FOR PRODUCING SILICONE OXIDE FILM
CN101402446B (zh) *	2008-11-06	2011-06-01	西安交通大学	一种减阻表面的制造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US4348473A (en) *	1981-03-04	1982-09-07	Xerox Corporation	Dry process for the production of microelectronic devices
US4460436A (en) *	1983-09-06	1984-07-17	International Business Machines Corporation	Deposition of polymer films by means of ion beams
JPS6250337A (ja) *	1985-08-28	1987-03-05	Nippon Sheet Glass Co Ltd	プラズマ重合による保護膜形成方法
US4781942A (en) *	1985-12-19	1988-11-01	Hughes Aircraft Company	Process for the photochemical vapor deposition of siloxane polymers
JP2528471B2 (ja) *	1987-06-22	1996-08-28	出光興産株式会社	ジクロロシラン類の製造方法

1989
- 1989-08-24 CA CA000609377A patent/CA1334911C/en not_active Expired - Fee Related
- 1989-12-16 EP EP89123324A patent/EP0382932B1/en not_active Expired - Lifetime
- 1989-12-16 DE DE68919346T patent/DE68919346T2/de not_active Expired - Fee Related
1990
- 1990-01-08 AU AU47788/90A patent/AU624467B2/en not_active Ceased
- 1990-01-09 CN CN90100094A patent/CN1029043C/zh not_active Expired - Fee Related
- 1990-01-12 PH PH39885A patent/PH27127A/en unknown
- 1990-01-15 KR KR1019900000410A patent/KR920005620B1/ko not_active IP Right Cessation
- 1990-01-15 MY MYPI90000060A patent/MY110289A/en unknown
- 1990-02-12 MX MX019461A patent/MX172109B/es unknown
- 1990-02-14 BR BR909000665A patent/BR9000665A/pt not_active Application Discontinuation
- 1990-02-15 JP JP2032615A patent/JPH0739629B2/ja not_active Expired - Fee Related
1995
- 1995-06-08 HK HK90595A patent/HK90595A/xx not_active IP Right Cessation

Also Published As

Publication number	Publication date
MY110289A (en)	1998-04-30
EP0382932A3 (en)	1990-12-05
DE68919346D1 (de)	1994-12-15
AU624467B2 (en)	1992-06-11
JPH02263981A (ja)	1990-10-26
CN1029043C (zh)	1995-06-21
DE68919346T2 (de)	1995-05-24
CN1044995A (zh)	1990-08-29
EP0382932A2 (en)	1990-08-22
JPH0739629B2 (ja)	1995-05-01
EP0382932B1 (en)	1994-11-09
KR920005620B1 (ko)	1992-07-10
CA1334911C (en)	1995-03-28
AU4778890A (en)	1990-08-23
BR9000665A (pt)	1991-01-15
KR900013102A (ko)	1990-09-03
MX172109B (es)	1993-12-03
HK90595A (en)	1995-06-16

Publication	Publication Date	Title
PH27127A (en)	1993-03-16	Process for the vapor deposition of polysilanes
EP0076656B1 (en)	1988-06-01	Solvent-soluble organopolysilsesquioxanes, processes for producing the same, and compositions and semiconductor devices using the same
JPS6048022B2 (ja)	1985-10-24	電子感応レジスト
JPS61219034A (ja)	1986-09-29	耐プラズマ性重合体物質の製法
JPH0381144B2 (zh)	1991-12-27
JP2022541818A (ja)	2022-09-27	有機金属の金属カルコゲナイドクラスター及びリソグラフィへの応用
KR950000483B1 (ko)	1995-01-20	실리콘-함유 중합체 및 그를 사용한 감광성 물질
US4517276A (en)	1985-05-14	Metal-containing organic photoresists
US5173452A (en)	1992-12-22	Process for the vapor deposition of polysilanes photoresists
US4965340A (en)	1990-10-23	Copolymer from sulfur dioxide and vinyl compound
JPS63241542A (ja)	1988-10-06	レジスト組成物
US3650744A (en)	1972-03-21	Etching method using photopolymerizable vapors as the photoresist
JPH03126036A (ja)	1991-05-29	３層レジスト法用の中間層形成材
JPH0314333B2 (zh)	1991-02-26
US4074031A (en)	1978-02-14	Process for preparing electron beam resists
JPS5953837A (ja)	1984-03-28	パタン形成材料およびパタン形成法
US4892617A (en)	1990-01-09	Processes involving lithographic materials
JPS63157145A (ja)	1988-06-30	感光性樹脂組成物
JPH0611791B2 (ja)	1994-02-16	二酸化硫黄、アセチレン化合物およびビニル化合物の共重合体
JPS62127737A (ja)	1987-06-10	現像液
CA1303549C (en)	1992-06-16	Electron beam sensitized resist containing polymerized w-alkenyl trimethylsilane
JPH07209863A (ja)	1995-08-11	パターン形成方法
JPS58111028A (ja)	1983-07-01	放射線感応性レジスト材料及びその使用方法
JPS62215628A (ja)	1987-09-22	二酸化硫黄と核置換トリアルキルシリルスチレンとの共重合体及びその製造方法
JPS61226747A (ja)	1986-10-08	有機シリコン・ポリマ組成物