NO990962L - FremgangsmÕte og anordning for optimalisering av bryteprosessen i en ikke-lÕsende, utkobbelbar krafthalvlederbryter - Google Patents

FremgangsmÕte og anordning for optimalisering av bryteprosessen i en ikke-lÕsende, utkobbelbar krafthalvlederbryter

Info

Publication number
NO990962L
NO990962L NO990962A NO990962A NO990962L NO 990962 L NO990962 L NO 990962L NO 990962 A NO990962 A NO 990962A NO 990962 A NO990962 A NO 990962A NO 990962 L NO990962 L NO 990962L
Authority
NO
Norway
Prior art keywords
semiconductor switch
switching process
optimizing
locking
power semiconductor
Prior art date
Application number
NO990962A
Other languages
English (en)
Norwegian (no)
Other versions
NO990962D0 (no
Inventor
Manfred Bruckmann
Benno Weis
Ingolf Hoffmann
Stefan Sparger
Hans-G Nter Eckel
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of NO990962D0 publication Critical patent/NO990962D0/no
Publication of NO990962L publication Critical patent/NO990962L/no

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H03K17/168—Modifications for eliminating interference voltages or currents in composite switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04—Modifications for accelerating switching
    • H03K17/042—Modifications for accelerating switching by feedback from the output circuit to the control circuit
    • H03K17/04206—Modifications for accelerating switching by feedback from the output circuit to the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
    • H03K17/165—Modifications for eliminating interference voltages or currents in field-effect transistor switches by feedback from the output circuit to the control circuit
    • H03K17/166—Soft switching
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0036—Means reducing energy consumption

Landscapes

  • Power Conversion In General (AREA)
  • Electronic Switches (AREA)
NO990962A 1996-08-27 1999-02-26 FremgangsmÕte og anordning for optimalisering av bryteprosessen i en ikke-lÕsende, utkobbelbar krafthalvlederbryter NO990962L (no)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE1996134612 DE19634612A1 (de) 1996-08-27 1996-08-27 Verfahren und Vorrichtung zur Optimierung des Abschaltvorgangs eines nichteinrastenden, abschaltbaren Leistungs-Halbleiterschalters
PCT/DE1997/001778 WO1998009378A1 (de) 1996-08-27 1997-08-18 Verfahren und vorrichtung zur optimierung des abschaltvorgangs eines nichteinrastenden, abschaltbaren leistungs-halbleiterschalters

Publications (2)

Publication Number Publication Date
NO990962D0 NO990962D0 (no) 1999-02-26
NO990962L true NO990962L (no) 1999-04-27

Family

ID=7803822

Family Applications (1)

Application Number Title Priority Date Filing Date
NO990962A NO990962L (no) 1996-08-27 1999-02-26 FremgangsmÕte og anordning for optimalisering av bryteprosessen i en ikke-lÕsende, utkobbelbar krafthalvlederbryter

Country Status (5)

Country Link
EP (1) EP0922331A1 (de)
CN (1) CN1234146A (de)
DE (1) DE19634612A1 (de)
NO (1) NO990962L (de)
WO (1) WO1998009378A1 (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3664061B2 (ja) * 1999-12-28 2005-06-22 日産自動車株式会社 電流制御型半導体素子用駆動回路
DE10137764A1 (de) * 2001-08-02 2003-02-13 Daimler Chrysler Ag Verfahren und Vorrichtung zum Schutz vor Überspannungen beim Abschalten eines Halbleiterschalters
DE10355255A1 (de) * 2003-11-26 2005-07-07 Rexroth Indramat Gmbh Verfahren zur Ansteuerung eines Bipolartransistors mit isolierter Gate-Elektrode und Vorrichtung zur Durchführung des Verfahrens
GB2433358A (en) * 2005-12-13 2007-06-20 Bombardier Transp Gmbh Operating electronic valves having an insulated gate
GB2458704A (en) * 2008-03-28 2009-09-30 Bombardier Transp Gmbh An improved overcurrent protection circuit for an IGBT in an inverter
EP2424112B1 (de) * 2010-08-23 2015-07-01 ABB Research Ltd Stromausgleich parallel verbundener Halbleiterkomponenten
DE102011109537B4 (de) * 2011-08-05 2021-12-30 Sew-Eurodrive Gmbh & Co Kg Umrichtersystem mit Überwachungseinrichtung, Antrieb und Fahrzeug
DE102012207147B4 (de) * 2012-04-27 2016-01-21 Infineon Technologies Ag Verfahren zum Ansteuern von Leistungshalbleiterschaltern
DE102014108451B3 (de) * 2014-06-16 2015-08-27 Infineon Technologies Ag Schaltung und Verfahren zum Ansteuern eines Leistungshalbleiterschalters
CN104378097B (zh) * 2014-09-29 2018-06-12 株洲变流技术国家工程研究中心有限公司 一种绝缘栅双极型晶体管的驱动***及方法
WO2019149346A1 (de) * 2018-01-31 2019-08-08 Siemens Aktiengesellschaft Verfahren zum abschalten eines leistungshalbleiterbauelements
DE102018107146B4 (de) * 2018-03-26 2020-04-16 Semikron Elektronik Gmbh & Co. Kg Steuereinrichtung für einen Leistungshalbleiterschalter
EP3719997A1 (de) * 2019-04-01 2020-10-07 Siemens Aktiengesellschaft Beschaltung eines halbleiterschalters
DE102019134525A1 (de) * 2019-12-16 2021-06-17 Valeo Siemens Eautomotive Germany Gmbh Schaltungsanordnung und Verfahren zum Schutz eines Leistungshalbleiterschalters vor Überspannungen
US11165422B2 (en) 2020-04-01 2021-11-02 Delta Electronics, Inc. Gate driver circuit with reduced power semiconductor conduction loss

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4591734A (en) * 1984-04-27 1986-05-27 General Electric Company Integratable circuit for controlling turn-off voltage rate-of-change of non-regenerative voltage-controlled switching semiconductor devices
EP0361211B1 (de) * 1988-09-28 1994-01-26 Siemens Aktiengesellschaft Schutzschaltung für einen Leistungshalbleiterbaustein
DE3936544A1 (de) * 1988-12-21 1990-06-28 Siemens Ag Schaltungsanordnung zum schutz eines leistungs-mosfet
US5204562A (en) * 1991-11-29 1993-04-20 Motorola, Inc. Turn off delay reduction circuit and method
EP0645889B1 (de) * 1993-09-13 2001-12-12 Siemens Aktiengesellschaft Verfahren und Vorrichtung zur Begrenzung der Stromfallgeschwindigkeit beim Ausschalten von Leistungshalbleiterschaltern mit MOS-Steuereingang
DE4428548B4 (de) * 1994-08-12 2007-11-22 Robert Bosch Gmbh Schaltungsanordnung mit einem Feldeffekttransistor

Also Published As

Publication number Publication date
EP0922331A1 (de) 1999-06-16
NO990962D0 (no) 1999-02-26
CN1234146A (zh) 1999-11-03
WO1998009378A1 (de) 1998-03-05
DE19634612A1 (de) 1998-03-12

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