NO913689L - Fremgangsmaate ved fremstilling av silisiumbarrer med hoey renhet. - Google Patents

Fremgangsmaate ved fremstilling av silisiumbarrer med hoey renhet.

Info

Publication number
NO913689L
NO913689L NO91913689A NO913689A NO913689L NO 913689 L NO913689 L NO 913689L NO 91913689 A NO91913689 A NO 91913689A NO 913689 A NO913689 A NO 913689A NO 913689 L NO913689 L NO 913689L
Authority
NO
Norway
Prior art keywords
procedure
manufacture
high purity
purity silicon
silicon bars
Prior art date
Application number
NO91913689A
Other languages
English (en)
Other versions
NO913689D0 (no
NO309807B1 (no
Inventor
Fukuo Aratani
Kyojiro Kaneko
Original Assignee
Kawasaki Steel Co
Osaka Titanium
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kawasaki Steel Co, Osaka Titanium filed Critical Kawasaki Steel Co
Publication of NO913689D0 publication Critical patent/NO913689D0/no
Publication of NO913689L publication Critical patent/NO913689L/no
Publication of NO309807B1 publication Critical patent/NO309807B1/no

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22D—CASTING OF METALS; CASTING OF OTHER SUBSTANCES BY THE SAME PROCESSES OR DEVICES
    • B22D11/00—Continuous casting of metals, i.e. casting in indefinite lengths
    • B22D11/10—Supplying or treating molten metal
    • B22D11/11—Treating the molten metal
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/546—Polycrystalline silicon PV cells

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Silicon Compounds (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Photovoltaic Devices (AREA)
NO913689A 1990-09-20 1991-09-19 FremgangsmÕte ved fremstilling av silisiumbarrer med høy renhet NO309807B1 (no)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2248883A JP3000109B2 (ja) 1990-09-20 1990-09-20 高純度シリコン鋳塊の製造方法

Publications (3)

Publication Number Publication Date
NO913689D0 NO913689D0 (no) 1991-09-19
NO913689L true NO913689L (no) 1992-03-23
NO309807B1 NO309807B1 (no) 2001-04-02

Family

ID=17184859

Family Applications (1)

Application Number Title Priority Date Filing Date
NO913689A NO309807B1 (no) 1990-09-20 1991-09-19 FremgangsmÕte ved fremstilling av silisiumbarrer med høy renhet

Country Status (5)

Country Link
US (1) US5510095A (no)
EP (1) EP0477784B1 (no)
JP (1) JP3000109B2 (no)
DE (1) DE69130556T2 (no)
NO (1) NO309807B1 (no)

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07126005A (ja) * 1993-10-28 1995-05-16 Nippon Oil Co Ltd シリコンコロイドの製造方法
US5753567A (en) * 1995-08-28 1998-05-19 Memc Electronic Materials, Inc. Cleaning of metallic contaminants from the surface of polycrystalline silicon with a halogen gas or plasma
US5961944A (en) * 1996-10-14 1999-10-05 Kawasaki Steel Corporation Process and apparatus for manufacturing polycrystalline silicon, and process for manufacturing silicon wafer for solar cell
CN1092602C (zh) * 1996-10-14 2002-10-16 川崎制铁株式会社 多晶硅的制造方法和装置
EP0869102B1 (en) * 1996-10-14 2002-05-22 Kawasaki Steel Corporation Process and apparatus for preparing polycrystalline silicon and process for preparing silicon substrate for solar cell
DE19650856B4 (de) * 1996-12-07 2005-10-20 Ald Vacuum Techn Ag Vorrichtung und Verfahren zur Herstellung von gerichtet erstarrten Stranggußblöcken
FR2808809B1 (fr) * 2000-05-11 2003-06-27 Emix Installation de fabrication en continu de barreau de silicium multicristallin
WO2002016265A1 (en) 2000-08-21 2002-02-28 Astropower, Inc. Method and apparatus for purifying silicon
WO2002053496A1 (fr) * 2000-12-28 2002-07-11 Sumitomo Mitsubishi Silicon Corporation Procede de moulage en continu de silicium
FR2827592B1 (fr) * 2001-07-23 2003-08-22 Invensil Silicium metallurgique de haute purete et procede d'elaboration
FR2831881B1 (fr) * 2001-11-02 2004-01-16 Hubert Lauvray Procede de purification de silicium metallurgique par plasma inductif couple a une solidification directionnelle et obtention directe de silicium de qualite solaire
DE10156336A1 (de) * 2001-11-16 2003-06-05 Ald Vacuum Techn Gmbh Verfahren zur Herstellung von Legierungs-Ingots
US8021483B2 (en) 2002-02-20 2011-09-20 Hemlock Semiconductor Corporation Flowable chips and methods for the preparation and use of same, and apparatus for use in the methods
JP4766837B2 (ja) 2004-03-03 2011-09-07 新日鉄マテリアルズ株式会社 シリコンからのホウ素除去方法
JP5140835B2 (ja) * 2005-03-07 2013-02-13 新日鉄住金マテリアルズ株式会社 高純度シリコンの製造方法
JP4741860B2 (ja) * 2005-03-07 2011-08-10 新日鉄マテリアルズ株式会社 高純度のシリコンの製造方法
JP4966560B2 (ja) 2005-03-07 2012-07-04 新日鉄マテリアルズ株式会社 高純度シリコンの製造方法
JP5068753B2 (ja) * 2005-08-02 2012-11-07 モギレフスキー、ラディオン 緻密なブロックの精製及び製造方法
JP4801601B2 (ja) * 2007-01-30 2011-10-26 株式会社アルバック シリコンの製造方法
FR2928641B1 (fr) 2008-03-14 2010-03-26 Centre Nat Rech Scient Procede de purification de silicium pour applications photovoltaiques
WO2010018849A1 (ja) 2008-08-15 2010-02-18 株式会社アルバック シリコンの精製方法
JP2011251853A (ja) * 2008-08-29 2011-12-15 Shin-Etsu Chemical Co Ltd 珪素の精製方法
US8729435B2 (en) * 2008-12-01 2014-05-20 Inductotherm Corp. Purification of silicon by electric induction melting and directional partial cooling of the melt
US20100140558A1 (en) * 2008-12-09 2010-06-10 Bp Corporation North America Inc. Apparatus and Method of Use for a Top-Down Directional Solidification System
WO2010077844A1 (en) * 2008-12-16 2010-07-08 Bp Corporation North America Inc. Systems and methods for manufacturing cast silicon
FR2944520B1 (fr) * 2009-04-17 2011-05-20 Similelt Procede et installation pour la purification du silicium metallurgique.
UA95131C2 (uk) * 2009-08-25 2011-07-11 Частное Акционерное Общество «Пиллар» Спосіб одержання зливків мультикристалічного кремнію індукційним методом
TWI393805B (zh) * 2009-11-16 2013-04-21 Masahiro Hoshino Purification method of metallurgical silicon
RU2548982C2 (ru) * 2009-11-20 2015-04-20 Консарк Корпорейшн Установка для электромагнитного литья кремния
TWI397617B (zh) * 2010-02-12 2013-06-01 Masahiro Hoshino Metal silicon purification device
DE102010015354A1 (de) * 2010-04-13 2011-10-13 Schmid Silicon Technology Gmbh Herstellung eines kristallinen Halbleiterwerkstoffs
CN102059029B (zh) * 2010-11-25 2013-12-25 东南大学 高湿烟气中细颗粒物的脱除方法及其装置
CN103570023B (zh) * 2012-07-23 2017-02-08 东莞东阳光科研发有限公司 一种工业硅造渣除硼的方法
CN103043664B (zh) * 2012-12-13 2014-08-27 青岛隆盛晶硅科技有限公司 一种真空抽取尾料进行定向凝固提纯多晶硅的方法及设备

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1098931B (de) * 1958-07-03 1961-02-09 Wacker Chemie Gmbh Verfahren zur Reinigung von geschmolzenem Silicium
GB1103329A (en) * 1964-09-15 1968-02-14 Gen Trustee Co Ltd Refining of silicon
FR2430917A1 (fr) * 1978-07-11 1980-02-08 Comp Generale Electricite Procede et dispositif d'elaboration de silicium polycristallin
DE2831817A1 (de) * 1978-07-19 1980-01-31 Siemens Ag Verfahren zum abscheiden von silicium in feinkristalliner form
FR2487808A1 (fr) * 1980-08-01 1982-02-05 Electricite De France Procede et dispositif d'elimination du bore dans le silicium par fusion de zone sous plasma reactif
JPH075288B2 (ja) * 1985-07-31 1995-01-25 フォトワット・インタナショナル・ソシエテ・アノニム 分割されたけい素をプラズマの下で精製する方法
DE3531610A1 (de) * 1985-09-04 1987-03-05 Wacker Chemitronic Verfahren und vorrichtung zur herstellung von siliciumstaeben
EP0349904B1 (en) * 1988-07-05 1994-02-23 Sumitomo Sitix Co., Ltd. Apparatus for casting silicon
JPH02230698A (ja) * 1989-03-02 1990-09-13 Seiko Epson Corp プラズマ計測方法

Also Published As

Publication number Publication date
EP0477784A1 (en) 1992-04-01
DE69130556T2 (de) 1999-04-29
EP0477784B1 (en) 1998-12-02
NO913689D0 (no) 1991-09-19
JP3000109B2 (ja) 2000-01-17
NO309807B1 (no) 2001-04-02
JPH04130009A (ja) 1992-05-01
DE69130556D1 (de) 1999-01-14
US5510095A (en) 1996-04-23

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