NO20074216L - Fremgangsmate og innretning for fremstilling av rettet storknede blokker og halvledermaterialer - Google Patents
Fremgangsmate og innretning for fremstilling av rettet storknede blokker og halvledermaterialerInfo
- Publication number
- NO20074216L NO20074216L NO20074216A NO20074216A NO20074216L NO 20074216 L NO20074216 L NO 20074216L NO 20074216 A NO20074216 A NO 20074216A NO 20074216 A NO20074216 A NO 20074216A NO 20074216 L NO20074216 L NO 20074216L
- Authority
- NO
- Norway
- Prior art keywords
- crucible
- semiconductor materials
- solidified blocks
- upper side
- producing directed
- Prior art date
Links
- 238000000034 method Methods 0.000 title abstract 3
- 239000000463 material Substances 0.000 title abstract 2
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000010438 heat treatment Methods 0.000 abstract 3
- 238000009413 insulation Methods 0.000 abstract 2
- 238000002955 isolation Methods 0.000 abstract 1
- 239000000155 melt Substances 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/003—Heating or cooling of the melt or the crystallised material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1004—Apparatus with means for measuring, testing, or sensing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1004—Apparatus with means for measuring, testing, or sensing
- Y10T117/1008—Apparatus with means for measuring, testing, or sensing with responsive control means
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1016—Apparatus with means for treating single-crystal [e.g., heat treating]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1092—Shape defined by a solid member other than seed or product [e.g., Bridgman-Stockbarger]
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Silicon Compounds (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102005005182 | 2005-02-03 | ||
PCT/EP2006/000972 WO2006082085A2 (fr) | 2005-02-03 | 2006-02-03 | Procede et dispositif pour realiser des blocs solidifies de façon orientee a partir de materiaux semi-conducteurs |
Publications (1)
Publication Number | Publication Date |
---|---|
NO20074216L true NO20074216L (no) | 2007-08-17 |
Family
ID=36777590
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NO20074216A NO20074216L (no) | 2005-02-03 | 2007-08-17 | Fremgangsmate og innretning for fremstilling av rettet storknede blokker og halvledermaterialer |
Country Status (7)
Country | Link |
---|---|
US (1) | US8268074B2 (fr) |
EP (1) | EP1851367B1 (fr) |
JP (1) | JP5059622B2 (fr) |
KR (1) | KR101227563B1 (fr) |
CN (1) | CN101133191A (fr) |
NO (1) | NO20074216L (fr) |
WO (1) | WO2006082085A2 (fr) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1974077A2 (fr) | 2006-01-20 | 2008-10-01 | BP Corporation North America Inc. | Procédés et appareils destinés à fabriquer du silicium coulé monocristallin et des corps de silicium coulé monocristallin pour des applications photovoltaïques |
US8328932B2 (en) * | 2007-06-14 | 2012-12-11 | Evergreen Solar, Inc | Ribbon crystal pulling furnace afterheater with at least one opening |
CN100570021C (zh) * | 2007-07-17 | 2009-12-16 | 佳科太阳能硅(厦门)有限公司 | 一种多晶硅的提纯方法及其凝固装置 |
US8440157B2 (en) * | 2007-07-20 | 2013-05-14 | Amg Idealcast Solar Corporation | Methods and apparatuses for manufacturing cast silicon from seed crystals |
CA2774176C (fr) | 2009-09-18 | 2014-07-29 | Abb Ab | Appareil et procede permettant une cristallisation du silicium |
EP2582861A1 (fr) * | 2010-06-16 | 2013-04-24 | Centrotherm Sitec GmbH | Procédé et appareil de fabrication de lingots de silicium polycristallin |
CN101906657B (zh) * | 2010-07-08 | 2013-04-03 | 王敬 | 制造单晶锭的*** |
US8562740B2 (en) * | 2010-11-17 | 2013-10-22 | Silicor Materials Inc. | Apparatus for directional solidification of silicon including a refractory material |
US8926751B2 (en) * | 2010-12-02 | 2015-01-06 | National Central University | Gas flow guiding device for use in crystal-growing furnace |
US20120137962A1 (en) * | 2010-12-03 | 2012-06-07 | Jyh-Chen Chen | Gas supply device for use in crystal-growing furnace |
GB201111735D0 (en) | 2011-07-08 | 2011-08-24 | Rec Wafer Norway As | Furnace for semiconductor material and method |
KR101345747B1 (ko) * | 2011-08-18 | 2013-12-30 | 한국화학연구원 | 반도체 또는 금속산화물 잉곳 제조장치 |
US9352389B2 (en) | 2011-09-16 | 2016-05-31 | Silicor Materials, Inc. | Directional solidification system and method |
TWI643983B (zh) | 2013-03-14 | 2018-12-11 | 美商希利柯爾材料股份有限公司 | 定向凝固系統及方法 |
ITTO20130258A1 (it) * | 2013-03-28 | 2014-09-29 | Saet Spa | Dispositivo e metodo per produrre un blocco di materiale multicristallino, in particolare silicio, mediante solidificazione direzionale |
CN111675222B (zh) * | 2020-07-13 | 2022-08-09 | 昆明理工大学 | 一种利用低品位硅石生产工业硅的方法 |
CN115142129B (zh) * | 2022-07-04 | 2023-09-26 | 扬州晶樱光电科技有限公司 | 一种用于多晶铸锭炉的气体液体配合冷却装置及方法 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2332388C2 (de) * | 1973-06-26 | 1982-11-25 | Naamloze Vennootschap Philips' Gloeilampenfabrieken, 5621 Eindhoven | Verfahren zur Herstellung stabförmiger Einkristalle und Vorrichtung zur Durchführung des Verfahrens |
JPH0737670B2 (ja) | 1991-04-26 | 1995-04-26 | 株式会社日本生産技術研究所 | ライン式プラズマcvd装置 |
JP3520957B2 (ja) * | 1997-06-23 | 2004-04-19 | シャープ株式会社 | 多結晶半導体インゴットの製造方法および装置 |
JP3523986B2 (ja) * | 1997-07-02 | 2004-04-26 | シャープ株式会社 | 多結晶半導体の製造方法および製造装置 |
DE19730637A1 (de) | 1997-07-17 | 1999-01-21 | Ald Vacuum Techn Gmbh | Verfahren zum gerichteten Erstarren einer Metallschmelze und Gießvorrichtung zu seiner Durchführung |
DE19855061B4 (de) | 1998-11-28 | 2012-05-16 | Ald Vacuum Technologies Ag | Schmelzofen zum Schmelzen von Silizium |
JP3885452B2 (ja) * | 1999-04-30 | 2007-02-21 | 三菱マテリアル株式会社 | 結晶シリコンの製造方法 |
DE19934940C2 (de) * | 1999-07-26 | 2001-12-13 | Ald Vacuum Techn Ag | Vorrichtung zum Herstellen von gerichtet erstarrten Blöcken und Betriebsverfahren hierfür |
DE10239104B4 (de) * | 2002-08-27 | 2006-12-14 | Crystal Growing Systems Gmbh | Kristallzüchtungsofen, nämlich Vertical-Bridgman- oder Vertical-Gradient-Freeze-Kristallzüchtungsofen mit einem Mantelheizer und Verfahren zur Regelung der Heizleistung des Mantelheizers |
-
2006
- 2006-02-03 US US11/883,489 patent/US8268074B2/en active Active
- 2006-02-03 KR KR1020077020137A patent/KR101227563B1/ko active IP Right Grant
- 2006-02-03 WO PCT/EP2006/000972 patent/WO2006082085A2/fr active Application Filing
- 2006-02-03 JP JP2007553548A patent/JP5059622B2/ja active Active
- 2006-02-03 CN CNA2006800038996A patent/CN101133191A/zh active Pending
- 2006-02-03 EP EP06706634A patent/EP1851367B1/fr active Active
-
2007
- 2007-08-17 NO NO20074216A patent/NO20074216L/no not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
KR20070102593A (ko) | 2007-10-18 |
WO2006082085A3 (fr) | 2007-04-05 |
WO2006082085A2 (fr) | 2006-08-10 |
JP2008528434A (ja) | 2008-07-31 |
US20110308448A1 (en) | 2011-12-22 |
EP1851367A2 (fr) | 2007-11-07 |
US8268074B2 (en) | 2012-09-18 |
CN101133191A (zh) | 2008-02-27 |
JP5059622B2 (ja) | 2012-10-24 |
KR101227563B1 (ko) | 2013-01-29 |
EP1851367B1 (fr) | 2012-08-08 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
CHAD | Change of the owner's name or address (par. 44 patent law, par. patentforskriften) |
Owner name: REC WAFER PTE LTD, SG |
|
FC2A | Withdrawal, rejection or dismissal of laid open patent application |