NO20074216L - Fremgangsmate og innretning for fremstilling av rettet storknede blokker og halvledermaterialer - Google Patents

Fremgangsmate og innretning for fremstilling av rettet storknede blokker og halvledermaterialer

Info

Publication number
NO20074216L
NO20074216L NO20074216A NO20074216A NO20074216L NO 20074216 L NO20074216 L NO 20074216L NO 20074216 A NO20074216 A NO 20074216A NO 20074216 A NO20074216 A NO 20074216A NO 20074216 L NO20074216 L NO 20074216L
Authority
NO
Norway
Prior art keywords
crucible
semiconductor materials
solidified blocks
upper side
producing directed
Prior art date
Application number
NO20074216A
Other languages
English (en)
Inventor
Franz Hugo
Original Assignee
Rec Scanwafer As
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rec Scanwafer As filed Critical Rec Scanwafer As
Publication of NO20074216L publication Critical patent/NO20074216L/no

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/003—Heating or cooling of the melt or the crystallised material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1004—Apparatus with means for measuring, testing, or sensing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1004—Apparatus with means for measuring, testing, or sensing
    • Y10T117/1008—Apparatus with means for measuring, testing, or sensing with responsive control means
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1016—Apparatus with means for treating single-crystal [e.g., heat treating]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1092—Shape defined by a solid member other than seed or product [e.g., Bridgman-Stockbarger]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

Oppfinnelsen gjelder en prosess og innretning for fremstilling av rettet størknede blokker av halvleder- materialer. Iimretningen omfiatter en digel som inneholder smelten og minst en oppvarmingsiimretning som er anordnet på oversiden av digelen. Digelen har en isolering som omgir digelen i det minste ovenfira og sideveis, og det er en avstand fira digel til isolasjon i det minste på oversiden. Området innenfior isoleringen på oversiden av digelen er delt opp gjennom et mellomlag i et prosessrom og et ovenfior liggende øvre oppvarmingskammer i hvilken det er anordnet minst et varmeelement.
NO20074216A 2005-02-03 2007-08-17 Fremgangsmate og innretning for fremstilling av rettet storknede blokker og halvledermaterialer NO20074216L (no)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102005005182 2005-02-03
PCT/EP2006/000972 WO2006082085A2 (de) 2005-02-03 2006-02-03 Verfahren und vorrichtung zum herstellen gerichtet erstarrter blöcke aus halbleitermaterialien

Publications (1)

Publication Number Publication Date
NO20074216L true NO20074216L (no) 2007-08-17

Family

ID=36777590

Family Applications (1)

Application Number Title Priority Date Filing Date
NO20074216A NO20074216L (no) 2005-02-03 2007-08-17 Fremgangsmate og innretning for fremstilling av rettet storknede blokker og halvledermaterialer

Country Status (7)

Country Link
US (1) US8268074B2 (no)
EP (1) EP1851367B1 (no)
JP (1) JP5059622B2 (no)
KR (1) KR101227563B1 (no)
CN (1) CN101133191A (no)
NO (1) NO20074216L (no)
WO (1) WO2006082085A2 (no)

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EP1974077A2 (en) 2006-01-20 2008-10-01 BP Corporation North America Inc. Methods and apparatuses for manufacturing monocrystalline cast silicon and monocrystalline cast silicon bodies for photovoltaics
US8328932B2 (en) * 2007-06-14 2012-12-11 Evergreen Solar, Inc Ribbon crystal pulling furnace afterheater with at least one opening
CN100570021C (zh) * 2007-07-17 2009-12-16 佳科太阳能硅(厦门)有限公司 一种多晶硅的提纯方法及其凝固装置
US8440157B2 (en) * 2007-07-20 2013-05-14 Amg Idealcast Solar Corporation Methods and apparatuses for manufacturing cast silicon from seed crystals
CA2774176C (en) 2009-09-18 2014-07-29 Abb Ab Apparatus and method for crystallization of silicon
EP2582861A1 (en) * 2010-06-16 2013-04-24 Centrotherm Sitec GmbH Process and apparatus for manufacturing polycrystalline silicon ingots
CN101906657B (zh) * 2010-07-08 2013-04-03 王敬 制造单晶锭的***
US8562740B2 (en) * 2010-11-17 2013-10-22 Silicor Materials Inc. Apparatus for directional solidification of silicon including a refractory material
US8926751B2 (en) * 2010-12-02 2015-01-06 National Central University Gas flow guiding device for use in crystal-growing furnace
US20120137962A1 (en) * 2010-12-03 2012-06-07 Jyh-Chen Chen Gas supply device for use in crystal-growing furnace
GB201111735D0 (en) 2011-07-08 2011-08-24 Rec Wafer Norway As Furnace for semiconductor material and method
KR101345747B1 (ko) * 2011-08-18 2013-12-30 한국화학연구원 반도체 또는 금속산화물 잉곳 제조장치
US9352389B2 (en) 2011-09-16 2016-05-31 Silicor Materials, Inc. Directional solidification system and method
TWI643983B (zh) 2013-03-14 2018-12-11 美商希利柯爾材料股份有限公司 定向凝固系統及方法
ITTO20130258A1 (it) * 2013-03-28 2014-09-29 Saet Spa Dispositivo e metodo per produrre un blocco di materiale multicristallino, in particolare silicio, mediante solidificazione direzionale
CN111675222B (zh) * 2020-07-13 2022-08-09 昆明理工大学 一种利用低品位硅石生产工业硅的方法
CN115142129B (zh) * 2022-07-04 2023-09-26 扬州晶樱光电科技有限公司 一种用于多晶铸锭炉的气体液体配合冷却装置及方法

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DE2332388C2 (de) * 1973-06-26 1982-11-25 Naamloze Vennootschap Philips' Gloeilampenfabrieken, 5621 Eindhoven Verfahren zur Herstellung stabförmiger Einkristalle und Vorrichtung zur Durchführung des Verfahrens
JPH0737670B2 (ja) 1991-04-26 1995-04-26 株式会社日本生産技術研究所 ライン式プラズマｃｖｄ装置
JP3520957B2 (ja) * 1997-06-23 2004-04-19 シャープ株式会社 多結晶半導体インゴットの製造方法および装置
JP3523986B2 (ja) * 1997-07-02 2004-04-26 シャープ株式会社 多結晶半導体の製造方法および製造装置
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Also Published As

Publication number Publication date
KR20070102593A (ko) 2007-10-18
WO2006082085A3 (de) 2007-04-05
WO2006082085A2 (de) 2006-08-10
JP2008528434A (ja) 2008-07-31
US20110308448A1 (en) 2011-12-22
EP1851367A2 (de) 2007-11-07
US8268074B2 (en) 2012-09-18
CN101133191A (zh) 2008-02-27
JP5059622B2 (ja) 2012-10-24
KR101227563B1 (ko) 2013-01-29
EP1851367B1 (de) 2012-08-08

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