JP5059622B2 - 半導体材料からなる配向された状態で凝固されたブロックの製造方法および装置 - Google Patents
半導体材料からなる配向された状態で凝固されたブロックの製造方法および装置 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims description 15
- 239000000463 material Substances 0.000 title claims description 12
- 239000004065 semiconductor Substances 0.000 title claims description 12
- 238000010438 heat treatment Methods 0.000 claims description 47
- 239000012212 insulator Substances 0.000 claims description 31
- 239000007789 gas Substances 0.000 claims description 19
- 239000000155 melt Substances 0.000 claims description 16
- 238000001816 cooling Methods 0.000 claims description 14
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 13
- 229910002804 graphite Inorganic materials 0.000 claims description 13
- 239000010439 graphite Substances 0.000 claims description 13
- 229910052710 silicon Inorganic materials 0.000 claims description 10
- 239000010703 silicon Substances 0.000 claims description 10
- 239000000112 cooling gas Substances 0.000 claims description 9
- 238000002425 crystallisation Methods 0.000 claims description 6
- 230000008025 crystallization Effects 0.000 claims description 5
- 230000008018 melting Effects 0.000 claims description 4
- 238000002844 melting Methods 0.000 claims description 4
- 238000007711 solidification Methods 0.000 claims description 4
- 230000008023 solidification Effects 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 239000011810 insulating material Substances 0.000 claims description 2
- 239000003380 propellant Substances 0.000 claims 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 239000002184 metal Substances 0.000 description 4
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 239000012768 molten material Substances 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000110 cooling liquid Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000005501 phase interface Effects 0.000 description 1
- 230000002028 premature Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/003—Heating or cooling of the melt or the crystallised material
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1004—Apparatus with means for measuring, testing, or sensing
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1004—Apparatus with means for measuring, testing, or sensing
- Y10T117/1008—Apparatus with means for measuring, testing, or sensing with responsive control means
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1016—Apparatus with means for treating single-crystal [e.g., heat treating]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1092—Shape defined by a solid member other than seed or product [e.g., Bridgman-Stockbarger]
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- Crystallography & Structural Chemistry (AREA)
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- Metallurgy (AREA)
- Organic Chemistry (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Silicon Compounds (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Description
外部絶縁体2に対して距離を有して、それぞれに中間空間部を形成する状態で設置されている。
2 絶縁体
3 真空室
4 支持梁部
5 中間カバー
6 処理室
7 加熱室
8 上部能動加熱素子
9 支持プレート
10 中間絶縁体(フレーム)
11 マウント
12 噴射ガス供給部
13 溶融面
14 ガス供給部(管状端部)
15 ガス供給管
16 ノズル開口部
17 冷却ガス排出部
18 流れを示す矢印
19 熱交換器
20 冷却ガス循環ポンプ
21 下部能動加熱素子
22 下部冷却プレート
23 冷却管
24 脱気開口部
Claims (27)
- 半導体材料からなる配向された状態で凝固されたブロックを製造するための方法であって、溶融物は配向された状態で凝固させるための処理室において坩堝に収容され、結晶化作用を利用しながら少なくとも上側から加熱され、
前記坩堝の前記加熱は間接的に上方から、前記処理室から分離されている上部加熱室を介して行われる方法において、
前記上部加熱室(7)は前記処理室(6)に対して前記中間カバー(5)を介して概ね気密に閉鎖されていることを特徴とする方法。 - 前記上部加熱室と配向された状態での凝固を行うための前記処理室は、結晶化作用を利用しながら少なくとも上側から加熱されることを特徴とする請求項1に記載の方法。
- 半導体材料からなる配向された状態で凝固されたブロックを製造するための装置であって、溶融物が収容されている坩堝と、該坩堝を少なくとも上方および側方から囲繞するとともに少なくとも前記坩堝の上方において前記坩堝から離間されている絶縁体と、前記坩堝の上方に設けられている少なくとも一つの加熱装置とを有し、
前記絶縁体(2)内部であって前記坩堝(1)の上方の領域は中間カバー(5)によって処理室(6)と、該処理室の上方に設けられた上部加熱室(7)とに区分されており、該上部加熱室内に少なくとも一つの加熱素子(8)が設けられている装置において、
前記上部加熱室(7)は前記処理室(6)に対して前記中間カバー(5)を介して概ね気密に閉鎖されていることを特徴とする装置。 - 前記坩堝(1)は支持プレート(9)に担持されていることを特徴とする請求項3に記載の装置。
- 前記中間カバー(5)はフレーム(10)に載置され、該フレームは前記坩堝(1)を側方において距離を有して囲繞することを特徴とする請求項3または4に記載の装置。
- 前記フレームは中間絶縁体壁部(10)を形成するとともに絶縁材料から形成されていることを特徴とする請求項5に記載の装置。
- 前記フレーム(10)は前記絶縁体(2)に対して距離を有して設けられているとともに中間空間部を形成していることを特徴とする請求項3から6のいずれか1項に記載の装置。
- 前記坩堝の支持プレート(9)はマウント(11)に嵌入されていることを特徴とする請求項4に記載の装置。
- 前記マウント(11)はグラファイトから形成されていることを特徴とする請求項8に記載の装置。
- 前記マウント(11)はグラファイトプレートおよび/あるいはグラファイトシートの組み合わせから形成されていることを特徴とする請求項8に記載の装置。
- 前記マウント(11)の縁領域は前記フレーム(10)に対して前記支持プレート(9)を概ね気密にシールすることを特徴とする請求項8に記載の装置。
- 噴射ガス供給部(12)が設けられており、該噴射ガス供給部は前記処理室(6)の上部領域を起点とすることを特徴とする請求項3から11のいずれか1項に記載の装置。
- 前記噴射ガス供給部(12)は前記中間カバー(5)を介して設けられていることを特徴とする請求項12に記載の装置。
- 絶縁体を備えた前記坩堝(1)は真空室(3)に設けられていることを特徴とする請求項3から13のいずれか1項に記載の装置。
- 前記噴射ガス供給部(12)は前記処理室(6)を前記真空室(3)に直接的に連通させることを特徴とする請求項13または14に記載の装置。
- 前記マウント(11)と組み合わされた前記フレーム(10)と、前記坩堝の支持プレート(9)は同時に漏れ出す溶融物に対する受け皿として形成されていることを特徴とする請求項5または8に記載の装置。
- 前記受け皿の側壁部は前記フレーム(10)によって形成されていることを特徴とする請求項16に記載の装置。
- 前記受け皿の底部は前記マウント(11)に嵌入された前記坩堝の支持プレート(9)によって形成されていることを特徴とする請求項16に記載の装置。
- 前記受け皿の前記側壁部はシリコンを受容する黒鉛フェルトから形成されていることを特徴とする請求項17に記載の装置。
- 前記マウント(11)は水平方向における幾何学的な溶融面(13)の投影において、放熱開口部としての噴出口を有していることを特徴とする請求項8に記載の装置。
- 間隙部であって該間隙部を介してシリコンが漏れ出し得る間隙部はラビリンス状の階段部として実現されていることを特徴とする請求項3から20のいずれか1項に記載の装置。
- 前記支持プレート(9)は少なくとも一つの支持梁部(4)によって支持されていることを特徴とする請求項4から21のいずれか1項に記載の装置。
- 前記支持梁部(4)は同時にガス供給部(14,16)として形成されていることを特徴とする請求項22に記載の装置。
- 前記支持梁部(4)の前記坩堝底部に対向する側には、ノズル開口部(16)が設けられており、該ノズル開口部を介してガス供給部として形成された前記支持梁部(4)を介して冷却ガスが前記坩堝底部または前記坩堝支持プレートの下側に方向付けられることを特徴とする請求項23に記載の装置。
- 前記冷却ガスは循環装置において熱交換器(19)を介して再び冷却され、ポンプ(20)によって前記支持梁部(4)に供給されることを特徴とする請求項24に記載の装置。
- 前記坩堝(1)の前記支持プレート(9)の下方に該支持プレートに対して距離を有して下部能動加熱素子(21)が設けられていることを特徴とする請求項4から25のいずれか1項に記載の装置。
- 前記加熱素子(21)の下方に冷却装置(22,23)が設けられていることを特徴とする請求項26に記載の装置。
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DE102005005182 | 2005-02-03 | ||
DE102005005182.0 | 2005-02-03 | ||
PCT/EP2006/000972 WO2006082085A2 (de) | 2005-02-03 | 2006-02-03 | Verfahren und vorrichtung zum herstellen gerichtet erstarrter blöcke aus halbleitermaterialien |
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KR (1) | KR101227563B1 (ja) |
CN (1) | CN101133191A (ja) |
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JP3523986B2 (ja) * | 1997-07-02 | 2004-04-26 | シャープ株式会社 | 多結晶半導体の製造方法および製造装置 |
DE19730637A1 (de) | 1997-07-17 | 1999-01-21 | Ald Vacuum Techn Gmbh | Verfahren zum gerichteten Erstarren einer Metallschmelze und Gießvorrichtung zu seiner Durchführung |
DE19855061B4 (de) | 1998-11-28 | 2012-05-16 | Ald Vacuum Technologies Ag | Schmelzofen zum Schmelzen von Silizium |
JP3885452B2 (ja) * | 1999-04-30 | 2007-02-21 | 三菱マテリアル株式会社 | 結晶シリコンの製造方法 |
DE19934940C2 (de) * | 1999-07-26 | 2001-12-13 | Ald Vacuum Techn Ag | Vorrichtung zum Herstellen von gerichtet erstarrten Blöcken und Betriebsverfahren hierfür |
DE10239104B4 (de) * | 2002-08-27 | 2006-12-14 | Crystal Growing Systems Gmbh | Kristallzüchtungsofen, nämlich Vertical-Bridgman- oder Vertical-Gradient-Freeze-Kristallzüchtungsofen mit einem Mantelheizer und Verfahren zur Regelung der Heizleistung des Mantelheizers |
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2006
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- 2006-02-03 KR KR1020077020137A patent/KR101227563B1/ko active IP Right Grant
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- 2006-02-03 JP JP2007553548A patent/JP5059622B2/ja active Active
- 2006-02-03 CN CNA2006800038996A patent/CN101133191A/zh active Pending
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KR20070102593A (ko) | 2007-10-18 |
WO2006082085A3 (de) | 2007-04-05 |
WO2006082085A2 (de) | 2006-08-10 |
JP2008528434A (ja) | 2008-07-31 |
US20110308448A1 (en) | 2011-12-22 |
EP1851367A2 (de) | 2007-11-07 |
US8268074B2 (en) | 2012-09-18 |
CN101133191A (zh) | 2008-02-27 |
KR101227563B1 (ko) | 2013-01-29 |
NO20074216L (no) | 2007-08-17 |
EP1851367B1 (de) | 2012-08-08 |
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