NO20043432L - Elektronisk innretning innbefattende organiske halvledermaterialer - Google Patents
Elektronisk innretning innbefattende organiske halvledermaterialerInfo
- Publication number
- NO20043432L NO20043432L NO20043432A NO20043432A NO20043432L NO 20043432 L NO20043432 L NO 20043432L NO 20043432 A NO20043432 A NO 20043432A NO 20043432 A NO20043432 A NO 20043432A NO 20043432 L NO20043432 L NO 20043432L
- Authority
- NO
- Norway
- Prior art keywords
- electronic device
- device including
- organic semiconductor
- semiconductor materials
- including organic
- Prior art date
Links
- 239000000463 material Substances 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/451—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising a metal-semiconductor-metal [m-s-m] structure
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
- H10K19/10—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00 comprising field-effect transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/60—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation in which radiation controls flow of current through the devices, e.g. photoresistors
- H10K30/65—Light-sensitive field-effect devices, e.g. phototransistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/15—Hole transporting layers
- H10K50/155—Hole transporting layers comprising dopants
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/631—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
- H10K39/30—Devices controlled by radiation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/30—Doping active layers, e.g. electron transporting layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
- H10K77/10—Substrates, e.g. flexible substrates
- H10K77/111—Flexible substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
- H10K85/1135—Polyethylene dioxythiophene [PEDOT]; Derivatives thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/141—Organic polymers or oligomers comprising aliphatic or olefinic chains, e.g. poly N-vinylcarbazol, PVC or PTFE
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Thin Film Transistor (AREA)
- Semiconductor Memories (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/059,664 US6864118B2 (en) | 2002-01-28 | 2002-01-28 | Electronic devices containing organic semiconductor materials |
PCT/US2003/002464 WO2003065473A1 (en) | 2002-01-28 | 2003-01-28 | Electronic devices containing organic semiconductor materials |
Publications (1)
Publication Number | Publication Date |
---|---|
NO20043432L true NO20043432L (no) | 2004-08-17 |
Family
ID=27609864
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NO20043432A NO20043432L (no) | 2002-01-28 | 2004-08-17 | Elektronisk innretning innbefattende organiske halvledermaterialer |
Country Status (6)
Country | Link |
---|---|
US (2) | US6864118B2 (no) |
EP (1) | EP1470599A1 (no) |
JP (1) | JP2005516421A (no) |
NO (1) | NO20043432L (no) |
TW (1) | TW565935B (no) |
WO (1) | WO2003065473A1 (no) |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW512554B (en) * | 2001-12-18 | 2002-12-01 | Ind Tech Res Inst | A method for adhesion of wound electrodes or electrode |
WO2005106933A1 (en) * | 2004-04-28 | 2005-11-10 | Iufc-Hyu | Flexible single-crystal film and method of manufacturing the same |
JP2006019673A (ja) * | 2004-06-04 | 2006-01-19 | Mitsui Chemicals Inc | 半導体材料の改質方法,薄膜および半導体素子 |
JP4912671B2 (ja) * | 2004-11-26 | 2012-04-11 | 株式会社半導体エネルギー研究所 | 半導体装置 |
WO2006057417A1 (en) * | 2004-11-26 | 2006-06-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US8624227B2 (en) * | 2005-02-22 | 2014-01-07 | Ramot At Tel-Aviv University Ltd. | Optoelectronic device and method of fabricating the same |
WO2006090381A1 (en) * | 2005-02-22 | 2006-08-31 | Ramot At Tel Aviv University Ltd. | Molecular optoelectronic device and method of fabricating the same |
US7468545B2 (en) * | 2005-05-06 | 2008-12-23 | Megica Corporation | Post passivation structure for a semiconductor device and packaging process for same |
US7582556B2 (en) * | 2005-06-24 | 2009-09-01 | Megica Corporation | Circuitry component and method for forming the same |
US20070134570A1 (en) * | 2005-12-14 | 2007-06-14 | Lexmark International, Inc. | Long life photoconductors |
DE102006013605A1 (de) * | 2006-03-22 | 2007-10-11 | Polyic Gmbh & Co. Kg | Verfahren zum Programmieren einer elektronischen Schaltung sowie elektronische Schaltung |
EP2059952A2 (en) * | 2006-08-22 | 2009-05-20 | Ramot at Tel Aviv University Ltd. | Optoelectronic device and method of fabricating the same |
JP5250981B2 (ja) * | 2007-02-21 | 2013-07-31 | セイコーエプソン株式会社 | 有機デバイスの製造方法並びに電子機器 |
CA2724383A1 (en) * | 2008-06-04 | 2009-12-10 | Solexant Corp. | Thin film solar cells with monolithic integration and backside contact |
JP5672723B2 (ja) * | 2010-03-09 | 2015-02-18 | 富士通株式会社 | 化合物半導体装置の製造方法 |
CN103379681B (zh) * | 2012-04-28 | 2016-03-30 | 清华大学 | 加热垫 |
FR3025052B1 (fr) | 2014-08-19 | 2017-12-15 | Isorg | Dispositif de detection d'un rayonnement electromagnetique en materiaux organiques |
EP3439853A4 (en) * | 2016-04-05 | 2019-12-11 | Hewlett-Packard Development Company, L.P. | SETS OF PHOTOSENSITIVE MATERIALS |
EP3765263A4 (en) * | 2018-03-13 | 2021-10-06 | Hewlett-Packard Development Company, L.P. | MELTING ELECTRONIC COMPONENTS INTO THREE-DIMENSIONAL OBJECTS |
CN112002820A (zh) * | 2020-08-07 | 2020-11-27 | 深圳市华星光电半导体显示技术有限公司 | Oled显示面板的制作方法及oled显示面板 |
Family Cites Families (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4358479A (en) | 1980-12-01 | 1982-11-09 | International Business Machines Corporation | Treatment of copper and use thereof |
US5250990A (en) * | 1985-09-30 | 1993-10-05 | Canon Kabushiki Kaisha | Image-bearing member for electrophotography and blade cleaning method |
JP3069139B2 (ja) * | 1990-03-16 | 2000-07-24 | 旭化成工業株式会社 | 分散型電界発光素子 |
US5689428A (en) * | 1990-09-28 | 1997-11-18 | Texas Instruments Incorporated | Integrated circuits, transistors, data processing systems, printed wiring boards, digital computers, smart power devices, and processes of manufacture |
JPH0794807A (ja) | 1993-07-27 | 1995-04-07 | Toshiba Corp | アモルファス有機薄膜素子、アモルファス有機ポリマー組成物及びアモルファス無機組成物 |
US5556706A (en) | 1993-10-06 | 1996-09-17 | Matsushita Electric Industrial Co., Ltd. | Conductive layered product and method of manufacturing the same |
JPH08143550A (ja) | 1993-12-15 | 1996-06-04 | Hodogaya Chem Co Ltd | ヒドラゾン化合物及び該化合物を用いた電子写真用感光体並びに有機電界発光素子 |
US5556716A (en) * | 1994-08-25 | 1996-09-17 | E. I. Du Pont De Nemours And Company | X-ray photoconductive compositions for x-ray radiography |
US5612228A (en) | 1996-04-24 | 1997-03-18 | Motorola | Method of making CMOS with organic and inorganic semiconducting region |
US5981970A (en) * | 1997-03-25 | 1999-11-09 | International Business Machines Corporation | Thin-film field-effect transistor with organic semiconductor requiring low operating voltages |
US5946551A (en) * | 1997-03-25 | 1999-08-31 | Dimitrakopoulos; Christos Dimitrios | Fabrication of thin film effect transistor comprising an organic semiconductor and chemical solution deposited metal oxide gate dielectric |
NO972803D0 (no) | 1997-06-17 | 1997-06-17 | Opticom As | Elektrisk adresserbar logisk innretning, fremgangsmåte til elektrisk adressering av samme og anvendelse av innretning og fremgangsmåte |
JPH11220161A (ja) * | 1998-01-30 | 1999-08-10 | Oki Electric Ind Co Ltd | 発光ダイオード及び発光ダイオードの製造方法 |
GB9803763D0 (en) * | 1998-02-23 | 1998-04-15 | Cambridge Display Tech Ltd | Display devices |
US6001523A (en) | 1998-10-29 | 1999-12-14 | Lexmark International, Inc. | Electrophotographic photoconductors |
US6207472B1 (en) | 1999-03-09 | 2001-03-27 | International Business Machines Corporation | Low temperature thin film transistor fabrication |
US6265243B1 (en) | 1999-03-29 | 2001-07-24 | Lucent Technologies Inc. | Process for fabricating organic circuits |
US6252245B1 (en) | 1999-03-29 | 2001-06-26 | Howard Edan Katz | Device comprising n-channel semiconductor material |
JP3532788B2 (ja) * | 1999-04-13 | 2004-05-31 | 唯知 須賀 | 半導体装置及びその製造方法 |
EP1079397A1 (en) | 1999-08-23 | 2001-02-28 | Agfa-Gevaert N.V. | Method of making an electroconductive pattern on a support |
US6197663B1 (en) | 1999-12-07 | 2001-03-06 | Lucent Technologies Inc. | Process for fabricating integrated circuit devices having thin film transistors |
US6329226B1 (en) | 2000-06-01 | 2001-12-11 | Agere Systems Guardian Corp. | Method for fabricating a thin-film transistor |
US6670645B2 (en) * | 2000-06-30 | 2003-12-30 | E. I. Du Pont De Nemours And Company | Electroluminescent iridium compounds with fluorinated phenylpyridines, phenylpyrimidines, and phenylquinolines and devices made with such compounds |
US6828685B2 (en) * | 2002-06-14 | 2004-12-07 | Hewlett-Packard Development Company, L.P. | Memory device having a semiconducting polymer film |
-
2002
- 2002-01-28 US US10/059,664 patent/US6864118B2/en not_active Expired - Lifetime
- 2002-05-27 TW TW091111159A patent/TW565935B/zh not_active IP Right Cessation
-
2003
- 2003-01-28 EP EP03705938A patent/EP1470599A1/en not_active Withdrawn
- 2003-01-28 WO PCT/US2003/002464 patent/WO2003065473A1/en active Application Filing
- 2003-01-28 JP JP2003564953A patent/JP2005516421A/ja active Pending
-
2004
- 2004-08-17 NO NO20043432A patent/NO20043432L/no not_active Application Discontinuation
-
2005
- 2005-01-18 US US11/039,444 patent/US7276727B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP2005516421A (ja) | 2005-06-02 |
US20050151130A1 (en) | 2005-07-14 |
US7276727B2 (en) | 2007-10-02 |
WO2003065473A1 (en) | 2003-08-07 |
EP1470599A1 (en) | 2004-10-27 |
TW565935B (en) | 2003-12-11 |
US20030141498A1 (en) | 2003-07-31 |
US6864118B2 (en) | 2005-03-08 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
FC2A | Withdrawal, rejection or dismissal of laid open patent application |