NL9301479A - Microgolfondersteunde verstuivingsinrichting. - Google Patents
Microgolfondersteunde verstuivingsinrichting. Download PDFInfo
- Publication number
- NL9301479A NL9301479A NL9301479A NL9301479A NL9301479A NL 9301479 A NL9301479 A NL 9301479A NL 9301479 A NL9301479 A NL 9301479A NL 9301479 A NL9301479 A NL 9301479A NL 9301479 A NL9301479 A NL 9301479A
- Authority
- NL
- Netherlands
- Prior art keywords
- microwave
- microwave assisted
- target
- hollow conductor
- sputtering device
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/354—Introduction of auxiliary energy into the plasma
- C23C14/357—Microwaves, e.g. electron cyclotron resonance enhanced sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
- H01J37/32211—Means for coupling power to the plasma
- H01J37/32229—Waveguides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
- H01J37/32211—Means for coupling power to the plasma
- H01J37/32247—Resonators
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B6/00—Heating by electric, magnetic or electromagnetic fields
- H05B6/64—Heating using microwaves
- H05B6/80—Apparatus for specific applications
Landscapes
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Electromagnetism (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE4230291A DE4230291C2 (de) | 1992-09-10 | 1992-09-10 | Mikrowellenunterstützte Zerstäubungsanordnung |
DE4230291 | 1992-09-10 |
Publications (1)
Publication Number | Publication Date |
---|---|
NL9301479A true NL9301479A (nl) | 1994-04-05 |
Family
ID=6467678
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL9301479A NL9301479A (nl) | 1992-09-10 | 1993-08-26 | Microgolfondersteunde verstuivingsinrichting. |
Country Status (5)
Country | Link |
---|---|
US (1) | US5531877A (ko) |
JP (1) | JPH06220631A (ko) |
KR (1) | KR940007215A (ko) |
DE (1) | DE4230291C2 (ko) |
NL (1) | NL9301479A (ko) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE4336830A1 (de) * | 1993-10-28 | 1995-05-04 | Leybold Ag | Plasma-Zerstäubungsanlage mit Mikrowellenunterstützung |
BE1009356A5 (fr) * | 1995-03-24 | 1997-02-04 | Cockerill Rech & Dev | Procede et dispositif pour revetir ou nettoyer un substrat. |
DE19640832C2 (de) * | 1996-10-02 | 2000-08-10 | Fraunhofer Ges Forschung | Verfahren zur Herstellung wärmereflektierender Schichtsysteme |
AU9410498A (en) | 1997-11-26 | 1999-06-17 | Vapor Technologies, Inc. | Apparatus for sputtering or arc evaporation |
FR2774251B1 (fr) * | 1998-01-26 | 2000-02-25 | Commissariat Energie Atomique | Source a plasma micro-onde lineaire en aimants permanents |
US6103074A (en) * | 1998-02-14 | 2000-08-15 | Phygen, Inc. | Cathode arc vapor deposition method and apparatus |
DE19834733C1 (de) * | 1998-07-31 | 2000-04-27 | Fraunhofer Ges Forschung | Vorrichtung und Verfahren zur Beschichtung und/oder Oberflächenmodifizierung von Gegenständen im Vakuum mittels eines Plasmas |
US6450604B1 (en) | 1998-07-31 | 2002-09-17 | Fujitsu Limited | Inkjet printing method and device |
JP2000226655A (ja) * | 1999-02-02 | 2000-08-15 | Matsushita Electric Ind Co Ltd | スパッタリング装置 |
US6186090B1 (en) * | 1999-03-04 | 2001-02-13 | Energy Conversion Devices, Inc. | Apparatus for the simultaneous deposition by physical vapor deposition and chemical vapor deposition and method therefor |
US5997705A (en) * | 1999-04-14 | 1999-12-07 | Vapor Technologies, Inc. | Rectangular filtered arc plasma source |
DE10133695B4 (de) | 2000-07-18 | 2015-08-13 | Schaeffler Technologies AG & Co. KG | Doppelkuplungsgetriebe |
US7498587B2 (en) * | 2006-05-01 | 2009-03-03 | Vapor Technologies, Inc. | Bi-directional filtered arc plasma source |
TWI419988B (zh) * | 2009-09-18 | 2013-12-21 | 羅門哈斯電子材料有限公司 | 製造耐用物件之方法 |
KR101335187B1 (ko) * | 2011-11-17 | 2013-11-29 | 한국기초과학지원연구원 | 미세조절이 가능한 스퍼터링 장치 및 이를 이용한 스퍼터링 방법 |
CN110029319A (zh) * | 2019-04-30 | 2019-07-19 | 深圳市华星光电半导体显示技术有限公司 | 溅镀装置及溅镀方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0173164A1 (en) * | 1984-08-31 | 1986-03-05 | Hitachi, Ltd. | Microwave assisting sputtering |
US4610770A (en) * | 1983-12-26 | 1986-09-09 | Hitachi, Ltd. | Method and apparatus for sputtering |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL8402012A (nl) * | 1983-07-19 | 1985-02-18 | Varian Associates | Magnetron spetter deklaag opbrengbron voor zowel magnetische als niet-magnetische trefplaatmaterialen. |
JPS60152671A (ja) * | 1984-01-20 | 1985-08-10 | Anelva Corp | スパツタリング電極 |
US4971674A (en) * | 1986-08-06 | 1990-11-20 | Ube Industries, Ltd. | Magnetron sputtering method and apparatus |
DE3750115T2 (de) * | 1986-10-20 | 1995-01-19 | Hitachi Ltd | Plasmabearbeitungsgerät. |
DE3920834A1 (de) * | 1989-06-24 | 1991-02-21 | Leybold Ag | Mikrowellen-kathodenzerstaeubungseinrichtung |
JPH0436465A (ja) * | 1990-06-01 | 1992-02-06 | Matsushita Electric Ind Co Ltd | マイクロ波プラズマ発生装置 |
DE4038497C1 (ko) * | 1990-12-03 | 1992-02-20 | Leybold Ag, 6450 Hanau, De |
-
1992
- 1992-09-10 DE DE4230291A patent/DE4230291C2/de not_active Expired - Fee Related
-
1993
- 1993-08-17 US US08/108,078 patent/US5531877A/en not_active Expired - Fee Related
- 1993-08-26 NL NL9301479A patent/NL9301479A/nl not_active Application Discontinuation
- 1993-08-30 JP JP5237343A patent/JPH06220631A/ja active Pending
- 1993-08-31 KR KR1019930017228A patent/KR940007215A/ko active IP Right Grant
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4610770A (en) * | 1983-12-26 | 1986-09-09 | Hitachi, Ltd. | Method and apparatus for sputtering |
EP0173164A1 (en) * | 1984-08-31 | 1986-03-05 | Hitachi, Ltd. | Microwave assisting sputtering |
Non-Patent Citations (1)
Title |
---|
"ECR-SPUTTER SOURCE FOR DEPOSITION OF METALS AT VERY LOW PRESSURES", IBM TECHNICAL DISCLOSURE BULLETIN, vol. 33, no. 7, 1 December 1990 (1990-12-01), pages 169/170, XP000108414 * |
Also Published As
Publication number | Publication date |
---|---|
KR940007215A (ko) | 1994-04-26 |
US5531877A (en) | 1996-07-02 |
JPH06220631A (ja) | 1994-08-09 |
DE4230291C2 (de) | 1999-11-04 |
DE4230291A1 (de) | 1994-03-17 |
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