DE3750115T2 - Plasmabearbeitungsgerät. - Google Patents

Plasmabearbeitungsgerät.

Info

Publication number
DE3750115T2
DE3750115T2 DE3750115T DE3750115T DE3750115T2 DE 3750115 T2 DE3750115 T2 DE 3750115T2 DE 3750115 T DE3750115 T DE 3750115T DE 3750115 T DE3750115 T DE 3750115T DE 3750115 T2 DE3750115 T2 DE 3750115T2
Authority
DE
Germany
Prior art keywords
processing device
plasma processing
plasma
processing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE3750115T
Other languages
English (en)
Other versions
DE3750115D1 (de
Inventor
Toru Otsubo
Yasuhiro Yamaguchi
Takahiko Takeuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP24741286A external-priority patent/JP2569019B2/ja
Priority claimed from JP62068838A external-priority patent/JP2633849B2/ja
Priority claimed from JP62097525A external-priority patent/JP2662219B2/ja
Priority claimed from JP62128158A external-priority patent/JP2675000B2/ja
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Application granted granted Critical
Publication of DE3750115D1 publication Critical patent/DE3750115D1/de
Publication of DE3750115T2 publication Critical patent/DE3750115T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/32238—Windows
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/517—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using a combination of discharges covered by two or more of groups C23C16/503 - C23C16/515
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/32247—Resonators

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
DE3750115T 1986-10-20 1987-10-20 Plasmabearbeitungsgerät. Expired - Fee Related DE3750115T2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP24741286A JP2569019B2 (ja) 1986-10-20 1986-10-20 エッチング方法及びその装置
JP62068838A JP2633849B2 (ja) 1987-03-25 1987-03-25 プラズマ処理装置
JP62097525A JP2662219B2 (ja) 1987-04-22 1987-04-22 プラズマ処理装置
JP62128158A JP2675000B2 (ja) 1987-05-27 1987-05-27 プラズマ処理装置

Publications (2)

Publication Number Publication Date
DE3750115D1 DE3750115D1 (de) 1994-07-28
DE3750115T2 true DE3750115T2 (de) 1995-01-19

Family

ID=27465045

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3750115T Expired - Fee Related DE3750115T2 (de) 1986-10-20 1987-10-20 Plasmabearbeitungsgerät.

Country Status (3)

Country Link
US (1) US4776918A (de)
EP (1) EP0264913B1 (de)
DE (1) DE3750115T2 (de)

Families Citing this family (90)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0246453A3 (de) * 1986-04-18 1989-09-06 General Signal Corporation Kontaminierungsfreie Plasma-Ätzvorrichtung mit mehreren Behandlungsstellen
US5102495A (en) * 1986-04-18 1992-04-07 General Signal Corporation Method providing multiple-processing of substrates
US5308431A (en) * 1986-04-18 1994-05-03 General Signal Corporation System providing multiple processing of substrates
US6103055A (en) * 1986-04-18 2000-08-15 Applied Materials, Inc. System for processing substrates
DE3752208T2 (de) * 1986-11-10 1998-12-24 Semiconductor Energy Lab Durch Mikrowellen gesteigertes CVD-Verfahren und -Gerät
US6677001B1 (en) * 1986-11-10 2004-01-13 Semiconductor Energy Laboratory Co., Ltd. Microwave enhanced CVD method and apparatus
US5433788A (en) * 1987-01-19 1995-07-18 Hitachi, Ltd. Apparatus for plasma treatment using electron cyclotron resonance
US4985227A (en) * 1987-04-22 1991-01-15 Indemitsu Petrochemical Co., Ltd. Method for synthesis or diamond
US4926791A (en) * 1987-04-27 1990-05-22 Semiconductor Energy Laboratory Co., Ltd. Microwave plasma apparatus employing helmholtz coils and ioffe bars
JPH0754759B2 (ja) * 1987-04-27 1995-06-07 日本電信電話株式会社 プラズマ処理方法および装置並びにプラズマ処理装置用モード変換器
US4883570A (en) * 1987-06-08 1989-11-28 Research-Cottrell, Inc. Apparatus and method for enhanced chemical processing in high pressure and atmospheric plasmas produced by high frequency electromagnetic waves
KR920002864B1 (ko) * 1987-07-20 1992-04-06 가부시기가이샤 히다찌세이사꾸쇼 플라즈마 처리방법 및 그 장치
JPS6424094A (en) * 1987-07-21 1989-01-26 Nat Inst Res Inorganic Mat Synthesizing apparatus for diamond
KR910007384B1 (ko) * 1987-09-16 1991-09-25 가부시끼가이샤 한도다이 에네르기 겐뀨쇼 초전도 산화물 형성방법 및 장치
US4911812A (en) * 1987-10-21 1990-03-27 Hitachi, Ltd. Plasma treating method and apparatus therefor
GB2212974B (en) * 1987-11-25 1992-02-12 Fuji Electric Co Ltd Plasma processing apparatus
US5024716A (en) * 1988-01-20 1991-06-18 Canon Kabushiki Kaisha Plasma processing apparatus for etching, ashing and film-formation
US4893584A (en) * 1988-03-29 1990-01-16 Energy Conversion Devices, Inc. Large area microwave plasma apparatus
JPH01297141A (ja) * 1988-05-25 1989-11-30 Canon Inc マイクロ波プラズマ処理装置
KR910002310A (ko) * 1988-06-29 1991-01-31 미다 가쓰시게 플라즈마 처리장치
JPH0216732A (ja) * 1988-07-05 1990-01-19 Mitsubishi Electric Corp プラズマ反応装置
JPH0227718A (ja) * 1988-07-15 1990-01-30 Mitsubishi Electric Corp プラズマ処理方法およびそれに用いるプラズマ処理装置
DE3843098A1 (de) * 1988-12-21 1990-06-28 Technics Plasma Gmbh Verfahren und vorrichtung zur kunststoffbeschichtung von strangprofilen
DE3903322A1 (de) * 1989-02-04 1990-08-16 Nmi Naturwissenschaftl U Mediz Verfahren zur erzeugung von ionen
JP2993675B2 (ja) * 1989-02-08 1999-12-20 株式会社日立製作所 プラズマ処理方法及びその装置
US5370765A (en) * 1989-03-09 1994-12-06 Applied Microwave Plasma Concepts, Inc. Electron cyclotron resonance plasma source and method of operation
US5133826A (en) * 1989-03-09 1992-07-28 Applied Microwave Plasma Concepts, Inc. Electron cyclotron resonance plasma source
US5032205A (en) * 1989-05-05 1991-07-16 Wisconsin Alumni Research Foundation Plasma etching apparatus with surface magnetic fields
US5225024A (en) * 1989-05-08 1993-07-06 Applied Materials, Inc. Magnetically enhanced plasma reactor system for semiconductor processing
US5091049A (en) * 1989-06-13 1992-02-25 Plasma & Materials Technologies, Inc. High density plasma deposition and etching apparatus
US5134965A (en) * 1989-06-16 1992-08-04 Hitachi, Ltd. Processing apparatus and method for plasma processing
US5312778A (en) * 1989-10-03 1994-05-17 Applied Materials, Inc. Method for plasma processing using magnetically enhanced plasma chemical vapor deposition
JPH03122273A (ja) * 1989-10-06 1991-05-24 Hitachi Ltd マイクロ波を用いた成膜装置
JP2602336B2 (ja) * 1989-11-29 1997-04-23 株式会社日立製作所 プラズマ処理装置
US5013400A (en) * 1990-01-30 1991-05-07 General Signal Corporation Dry etch process for forming champagne profiles, and dry etch apparatus
JP2581255B2 (ja) * 1990-04-02 1997-02-12 富士電機株式会社 プラズマ処理方法
JP3056772B2 (ja) * 1990-08-20 2000-06-26 株式会社日立製作所 プラズマの制御方法ならびにプラズマ処理方法およびその装置
KR930011413B1 (ko) * 1990-09-25 1993-12-06 가부시키가이샤 한도오따이 에네루기 겐큐쇼 펄스형 전자파를 사용한 플라즈마 cvd 법
US5804033A (en) * 1990-09-26 1998-09-08 Hitachi, Ltd. Microwave plasma processing method and apparatus
JP3020580B2 (ja) * 1990-09-28 2000-03-15 株式会社日立製作所 マイクロ波プラズマ処理装置
DE4119362A1 (de) * 1991-06-12 1992-12-17 Leybold Ag Teilchenquelle, insbesondere fuer reaktive ionenaetz- und plasmaunterstuetzte cvd-verfahren
US5628883A (en) * 1991-06-18 1997-05-13 Japan Vilene Co. Ltd. Method for generating and activating plasma process of treatment using same, and apparatus therefor
JP3042127B2 (ja) * 1991-09-02 2000-05-15 富士電機株式会社 酸化シリコン膜の製造方法および製造装置
EP0554039B1 (de) * 1992-01-30 1996-11-20 Hitachi, Ltd. Verfahren und Vorrichtung zur Plasmaerzeugung und Verfahren zur Halbleiter-Bearbeitung
JP3158715B2 (ja) * 1992-03-30 2001-04-23 株式会社ダイヘン プラズマ処理装置
JP2570090B2 (ja) * 1992-10-08 1997-01-08 日本電気株式会社 ドライエッチング装置
US5248371A (en) * 1992-08-13 1993-09-28 General Signal Corporation Hollow-anode glow discharge apparatus
DE4230291C2 (de) * 1992-09-10 1999-11-04 Leybold Ag Mikrowellenunterstützte Zerstäubungsanordnung
US5537004A (en) * 1993-03-06 1996-07-16 Tokyo Electron Limited Low frequency electron cyclotron resonance plasma processor
US5662770A (en) * 1993-04-16 1997-09-02 Micron Technology, Inc. Method and apparatus for improving etch uniformity in remote source plasma reactors with powered wafer chucks
US5501740A (en) * 1993-06-04 1996-03-26 Applied Science And Technology, Inc. Microwave plasma reactor
JPH07142444A (ja) * 1993-11-12 1995-06-02 Hitachi Ltd マイクロ波プラズマ処理装置および処理方法
US5545258A (en) * 1994-06-14 1996-08-13 Sumitomo Metal Industries, Ltd. Microwave plasma processing system
JPH0987851A (ja) * 1995-09-21 1997-03-31 Canon Inc マイクロ波プラズマ処理装置及び処理方法
JPH09125243A (ja) * 1995-10-27 1997-05-13 Canon Inc 薄膜形成装置
JPH09129607A (ja) * 1995-11-01 1997-05-16 Canon Inc マイクロ波プラズマエッチング装置及び方法
US5803975A (en) * 1996-03-01 1998-09-08 Canon Kabushiki Kaisha Microwave plasma processing apparatus and method therefor
JPH09266096A (ja) 1996-03-28 1997-10-07 Hitachi Ltd プラズマ処理装置及びこれを用いたプラズマ処理方法
JP2921499B2 (ja) * 1996-07-30 1999-07-19 日本電気株式会社 プラズマ処理装置
US6497783B1 (en) 1997-05-22 2002-12-24 Canon Kabushiki Kaisha Plasma processing apparatus provided with microwave applicator having annular waveguide and processing method
GB9712338D0 (en) 1997-06-14 1997-08-13 Secr Defence Surface coatings
JP3352418B2 (ja) 1999-01-28 2002-12-03 キヤノン株式会社 減圧処理方法及び減圧処理装置
US6368988B1 (en) 1999-07-16 2002-04-09 Micron Technology, Inc. Combined gate cap or digit line and spacer deposition using HDP
JP2001203099A (ja) 2000-01-20 2001-07-27 Yac Co Ltd プラズマ生成装置およびプラズマ処理装置
US6677549B2 (en) * 2000-07-24 2004-01-13 Canon Kabushiki Kaisha Plasma processing apparatus having permeable window covered with light shielding film
DE10114115A1 (de) * 2001-03-22 2002-10-02 Muegge Electronic Gmbh Anordnung zur Erzeugung von Plasma in einem Behandlungsraum
JP4183934B2 (ja) * 2001-10-19 2008-11-19 尚久 後藤 マイクロ波プラズマ処理装置、マイクロ波プラズマ処理方法及びマイクロ波給電装置
US6928839B2 (en) * 2002-08-15 2005-08-16 Ceramoptec Industries, Inc. Method for production of silica optical fiber preforms
US6988380B2 (en) * 2002-08-15 2006-01-24 Ceramoptec Industries, Inc. Method of silica optical fiber preform production
JP4381001B2 (ja) * 2003-02-25 2009-12-09 シャープ株式会社 プラズマプロセス装置
US20050178333A1 (en) * 2004-02-18 2005-08-18 Asm Japan K.K. System and method of CVD chamber cleaning
GB0406049D0 (en) * 2004-03-18 2004-04-21 Secr Defence Surface coatings
DE102004030344B4 (de) * 2004-06-18 2012-12-06 Carl Zeiss Vorrichtung zum Beschichten optischer Gläser mittels plasmaunterstützter chemischer Dampfabscheidung (CVD)
EP1739717A1 (de) * 2005-06-30 2007-01-03 Alter S.r.l. Plasmagenerator mit einer Schlitzantenne
US7485827B2 (en) * 2006-07-21 2009-02-03 Alter S.R.L. Plasma generator
EP2108714B1 (de) * 2007-01-29 2014-03-12 Sumitomo Electric Industries, Ltd. Mikrowellen-plasma-cvd-system
JP4793662B2 (ja) * 2008-03-28 2011-10-12 独立行政法人産業技術総合研究所 マイクロ波プラズマ処理装置
EP2230881B1 (de) * 2009-03-20 2018-11-28 Whirlpool Corporation Mikrowellenheizvorrichtung
JP5457754B2 (ja) * 2009-08-07 2014-04-02 株式会社日立ハイテクノロジーズ 透過型電極体を用いたプラズマ処理装置
JP5632186B2 (ja) * 2010-04-20 2014-11-26 株式会社日立ハイテクノロジーズ 稠密スロット透過型電極体を用いたプラズマ処理装置
CN102859655A (zh) 2010-04-30 2013-01-02 应用材料公司 垂直直列cvd***
US9543123B2 (en) * 2011-03-31 2017-01-10 Tokyo Electronics Limited Plasma processing apparatus and plasma generation antenna
JP5774778B2 (ja) * 2011-06-09 2015-09-09 コリア ベーシック サイエンス インスティテュート プラズマ発生源、スパッタリング装置、中性粒子ビーム発生源及び薄膜蒸着システム
JP2014026773A (ja) * 2012-07-25 2014-02-06 Tokyo Electron Ltd プラズマ処理装置
JP6144902B2 (ja) 2012-12-10 2017-06-07 東京エレクトロン株式会社 マイクロ波放射アンテナ、マイクロ波プラズマ源およびプラズマ処理装置
WO2014159449A1 (en) * 2013-03-14 2014-10-02 Tokyo Electron Limited Microwave surface-wave plasma device
US9941126B2 (en) * 2013-06-19 2018-04-10 Tokyo Electron Limited Microwave plasma device
TWI553700B (zh) * 2013-11-06 2016-10-11 東京威力科創股份有限公司 多單元共振器微波表面波電漿設備
JP6356415B2 (ja) 2013-12-16 2018-07-11 東京エレクトロン株式会社 マイクロ波プラズマ源およびプラズマ処理装置
GB2593159A (en) * 2020-03-12 2021-09-22 Univ Lancaster Method and apparatus for supplying electromagnetic power to a plasma vessel

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55134175A (en) * 1979-04-06 1980-10-18 Hitachi Ltd Microwave plasma etching unit
JPS5613480A (en) * 1979-07-13 1981-02-09 Hitachi Ltd Dry etching apparatus
JPS5696841A (en) * 1979-12-28 1981-08-05 Fujitsu Ltd Microwave plasma treating apparatus
DE3378508D1 (en) * 1982-09-10 1988-12-22 Nippon Telegraph & Telephone Plasma deposition method and apparatus
DE3566194D1 (en) * 1984-08-31 1988-12-15 Hitachi Ltd Microwave assisting sputtering
JPS61131454A (ja) * 1984-11-30 1986-06-19 Fujitsu Ltd マイクロ波プラズマ処理方法と装置

Also Published As

Publication number Publication date
EP0264913B1 (de) 1994-06-22
EP0264913A3 (en) 1989-09-06
DE3750115D1 (de) 1994-07-28
EP0264913A2 (de) 1988-04-27
US4776918A (en) 1988-10-11

Similar Documents

Publication Publication Date Title
DE3750115T2 (de) Plasmabearbeitungsgerät.
DE69008228D1 (de) Plasmabearbeitungsvorrichtung.
DE3774098D1 (de) Plasmageraet.
DE3778558D1 (de) Datenverarbeitungsgeraet.
DE3789122D1 (de) Datenverarbeitungsvorrichtung.
DE69030744T2 (de) Plasma-Bearbeitungsgerät
DE3763336D1 (de) Tragevorrichtung.
DE3750007T2 (de) Vakuum-Vorrichtungen.
DE3686789D1 (de) Vektorverarbeitungsgeraet.
DE3750026T2 (de) Bildverarbeitungsgerät.
DE3782447D1 (de) Dokumentverarbeitungsapparat.
DE3788160D1 (de) Plasmabehandlungsvorrichtung.
DE3788692T2 (de) Bildverarbeitungsvorrichtung.
DE3780973D1 (de) Informationsverarbeitungsgeraet.
DE3887933T2 (de) Plasma-Bearbeitungsgerät.
DE3786500D1 (de) Plasmaanzeigegeraet.
DE3781587D1 (de) Plasmaeinschlusssystem.
DE3786609D1 (de) Bildverarbeitungseinrichtung.
DE3750171T2 (de) Multiaufgabenverarbeitungsgerät.
NO891421D0 (no) Signalbehandlingssystem.
DE3783978D1 (de) Textverarbeitungsgeraet.
DE3678668D1 (de) Belegverarbeitungsvorrichtung.
DE3751088T2 (de) Signalverarbeitungseinrichtung.
DE3781971D1 (de) Dokumentverarbeitungsapparat.
DE3853551D1 (de) Plasmabehandlungsvorrichtung.

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee