NL8500596A - Inrichting voorzien van een halfgeleiderkathode. - Google Patents

Inrichting voorzien van een halfgeleiderkathode. Download PDF

Info

Publication number: NL8500596A
Authority: NL; Netherlands
Prior art keywords: cathode; electron; annular pattern; semiconductor; semiconductor body
Prior art date: 1985-03-04

Application number

NL8500596A

Other languages

English (en)

Dutch (nl)

Original Assignee

Philips Nv

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1985-03-04

Filing date

1985-03-04

Publication date

1986-10-01

1985-03-04 Application filed by Philips Nv filed Critical Philips Nv

1985-03-04 Priority to NL8500596A priority Critical patent/NL8500596A/nl

1986-02-26 Priority to US06/832,952 priority patent/US4717855A/en

1986-02-28 Priority to GB8605021A priority patent/GB2172741B/en

1986-02-28 Priority to FR8602824A priority patent/FR2578356B1/fr

1986-02-28 Priority to IT19575/86A priority patent/IT1190061B/it

1986-02-28 Priority to DE19863606489 priority patent/DE3606489A1/de

1986-03-03 Priority to JP61044309A priority patent/JPS61203547A/ja

1986-10-01 Publication of NL8500596A publication Critical patent/NL8500596A/nl

1990-10-25 Priority to SG883/90A priority patent/SG88390G/en

Links

239000004065 semiconductor Substances 0.000 title claims description 65
230000001681 protective effect Effects 0.000 claims description 4
239000012141 concentrate Substances 0.000 claims description 3
238000002347 injection Methods 0.000 claims 1
239000007924 injection Substances 0.000 claims 1
239000002184 metal Substances 0.000 claims 1
238000010894 electron beam technology Methods 0.000 description 14
230000015556 catabolic process Effects 0.000 description 9
239000010410 layer Substances 0.000 description 7
239000007789 gas Substances 0.000 description 6
229910052792 caesium Inorganic materials 0.000 description 5
TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 description 5
150000002500 ions Chemical class 0.000 description 5
125000004430 oxygen atom Chemical group O* 0.000 description 5
238000001465 metallisation Methods 0.000 description 4
230000009467 reduction Effects 0.000 description 3
239000000758 substrate Substances 0.000 description 3
239000002344 surface layer Substances 0.000 description 3
125000004429 atom Chemical group 0.000 description 2
QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical group [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
229910052788 barium Inorganic materials 0.000 description 2
DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 2
239000010406 cathode material Substances 0.000 description 2
150000001875 compounds Chemical class 0.000 description 2
238000010276 construction Methods 0.000 description 2
150000002430 hydrocarbons Chemical class 0.000 description 2
238000004519 manufacturing process Methods 0.000 description 2
239000000463 material Substances 0.000 description 2
238000000034 method Methods 0.000 description 2
230000003647 oxidation Effects 0.000 description 2
238000007254 oxidation reaction Methods 0.000 description 2
229910052710 silicon Inorganic materials 0.000 description 2
239000010703 silicon Substances 0.000 description 2
JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
238000004390 Auger electron microscopy Methods 0.000 description 1
OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical class O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 1
229910001218 Gallium arsenide Inorganic materials 0.000 description 1
VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
230000001133 acceleration Effects 0.000 description 1
238000000137 annealing Methods 0.000 description 1
235000020127 ayran Nutrition 0.000 description 1
230000000903 blocking effect Effects 0.000 description 1
229910052799 carbon Inorganic materials 0.000 description 1
239000011203 carbon fibre reinforced carbon Substances 0.000 description 1
239000004568 cement Substances 0.000 description 1
238000006243 chemical reaction Methods 0.000 description 1
239000004020 conductor Substances 0.000 description 1
239000002019 doping agent Substances 0.000 description 1
230000000694 effects Effects 0.000 description 1
230000006872 improvement Effects 0.000 description 1
230000003993 interaction Effects 0.000 description 1
238000005040 ion trap Methods 0.000 description 1
238000001459 lithography Methods 0.000 description 1
239000002052 molecular layer Substances 0.000 description 1
229910052760 oxygen Inorganic materials 0.000 description 1
239000001301 oxygen Substances 0.000 description 1
239000003973 paint Substances 0.000 description 1
230000008569 process Effects 0.000 description 1
230000008929 regeneration Effects 0.000 description 1
238000011069 regeneration method Methods 0.000 description 1
238000000682 scanning probe acoustic microscopy Methods 0.000 description 1
HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
229910010271 silicon carbide Inorganic materials 0.000 description 1
229910052814 silicon oxide Inorganic materials 0.000 description 1
239000002356 single layer Substances 0.000 description 1
238000001179 sorption measurement Methods 0.000 description 1
238000004544 sputter deposition Methods 0.000 description 1
229910052712 strontium Inorganic materials 0.000 description 1
CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/30—Cold cathodes, e.g. field-emissive cathode
- H01J1/308—Semiconductor cathodes, e.g. cathodes with PN junction layers

Landscapes

Cold Cathode And The Manufacture (AREA)

NL8500596A 1985-03-04 1985-03-04 Inrichting voorzien van een halfgeleiderkathode. NL8500596A (nl)

Priority Applications (8)

Application Number	Priority Date	Filing Date	Title
NL8500596A NL8500596A (nl)	1985-03-04	1985-03-04	Inrichting voorzien van een halfgeleiderkathode.
US06/832,952 US4717855A (en)	1985-03-04	1986-02-26	Dual-cathode electron emission device
GB8605021A GB2172741B (en)	1985-03-04	1986-02-28	Semiconductor cathode arrangements
FR8602824A FR2578356B1 (fr)	1985-03-04	1986-02-28	Dispositif muni d'une cathode semiconductrice
IT19575/86A IT1190061B (it)	1985-03-04	1986-02-28	Complesso dotato di un catodo semiconduttore
DE19863606489 DE3606489A1 (de)	1985-03-04	1986-02-28	Vorrichtung mit einer halbleiterkathode
JP61044309A JPS61203547A (ja)	1985-03-04	1986-03-03	半導体本体を具える装置及び半導体装置
SG883/90A SG88390G (en)	1985-03-04	1990-10-25	Semiconductor cathode arrangements

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
NL8500596A NL8500596A (nl)	1985-03-04	1985-03-04	Inrichting voorzien van een halfgeleiderkathode.
NL8500596		1985-03-04

Publications (1)

Publication Number	Publication Date
NL8500596A true NL8500596A (nl)	1986-10-01

Family

ID=19845615

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
NL8500596A NL8500596A (nl)	1985-03-04	1985-03-04	Inrichting voorzien van een halfgeleiderkathode.

Country Status (8)

Country	Link
US (1)	US4717855A (it)
JP (1)	JPS61203547A (it)
DE (1)	DE3606489A1 (it)
FR (1)	FR2578356B1 (it)
GB (1)	GB2172741B (it)
IT (1)	IT1190061B (it)
NL (1)	NL8500596A (it)
SG (1)	SG88390G (it)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US5185559A (en) *	1986-05-20	1993-02-09	Canon Kabushiki Kaisha	Supply circuit for P-N junction cathode
NL8602330A (nl) *	1986-09-15	1988-04-05	Philips Nv	Werkwijze voor het contacteren van halfgeleiderkathoden, alsmede voor het vervaardigen van een electronenbuis voorzien van een dergelijke kathode.
NL8700487A (nl) *	1987-02-27	1988-09-16	Philips Nv	Vacuuembuis met elektronenoptiek.
NL8901075A (nl) *	1989-04-28	1990-11-16	Philips Nv	Inrichting ten behoeve van elektronengeneratie en weergeefinrichting.
US5359257A (en) *	1990-12-03	1994-10-25	Bunch Kyle J	Ballistic electron, solid state cathode
US5686789A (en) *	1995-03-14	1997-11-11	Osram Sylvania Inc.	Discharge device having cathode with micro hollow array
JP3372848B2 (ja) *	1996-10-31	2003-02-04	キヤノン株式会社	電子放出素子及び画像表示装置及びそれらの製造方法
JP2000228352A (ja) *	1999-02-09	2000-08-15	Nikon Corp	電子銃及びそれを備える電子線転写装置
ITRM20040464A1 (it) *	2004-09-29	2004-12-29	Uni Degli Studi Di Roma Tor Vergata	Dispositivo per la pulizia di punte di un microscopio a scansione tunnel (stm), microscopio a scansione tunnel e relativo procedimento di pulizia.
EP1739705A2 (en) *	2005-06-30	2007-01-03	ICT, Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik Mbh	Continuously cleaning of the emission surface of a cold field emission gun using UV or laser beams
EP1746629A1 (en) *	2005-07-22	2007-01-24	ICT, Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik Mbh	Field emitter arrangement and method of cleansing an emitting surface of a field emitter

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
NL6903628A (it) *	1968-03-15	1969-09-17
FR2098954A5 (it) *	1970-07-31	1972-03-10	Anvar
GB1438502A (en) *	1972-06-05	1976-06-09	Vacuum Generators Ltd	Field emission electron sources
US4160188A (en) *	1976-04-23	1979-07-03	The United States Of America As Represented By The Secretary Of The Navy	Electron beam tube
NL8104893A (nl) *	1981-10-29	1983-05-16	Philips Nv	Kathodestraalbuis en halfgeleiderinrichting voor toepassing in een dergelijke kathodestraalbuis.
NL8200875A (nl) *	1982-03-04	1983-10-03	Philips Nv	Inrichting voor het opnemen of weergeven van beelden en halfgeleiderinrichting voor toepassing in een dergelijke inrichting.

1985
- 1985-03-04 NL NL8500596A patent/NL8500596A/nl not_active Application Discontinuation
1986
- 1986-02-26 US US06/832,952 patent/US4717855A/en not_active Expired - Fee Related
- 1986-02-28 GB GB8605021A patent/GB2172741B/en not_active Expired
- 1986-02-28 FR FR8602824A patent/FR2578356B1/fr not_active Expired
- 1986-02-28 IT IT19575/86A patent/IT1190061B/it active
- 1986-02-28 DE DE19863606489 patent/DE3606489A1/de not_active Withdrawn
- 1986-03-03 JP JP61044309A patent/JPS61203547A/ja active Pending
1990
- 1990-10-25 SG SG883/90A patent/SG88390G/en unknown

Also Published As

Publication number	Publication date
SG88390G (en)	1990-12-21
US4717855A (en)	1988-01-05
FR2578356A1 (fr)	1986-09-05
GB2172741A (en)	1986-09-24
DE3606489A1 (de)	1986-09-04
IT8619575A0 (it)	1986-02-28
FR2578356B1 (fr)	1987-06-05
GB2172741B (en)	1989-09-06
GB8605021D0 (en)	1986-04-09
JPS61203547A (ja)	1986-09-09
IT8619575A1 (it)	1987-08-28
IT1190061B (it)	1988-02-10

Legal Events

Date	Code	Title	Description
1986-10-01	A1B	A search report has been drawn up
1991-11-01	BV	The patent application has lapsed

Publication	Publication Date	Title
JPH0145694B2 (it)	1989-10-04
EP1274111B1 (en)	2005-09-07	Electron emission device
NL8400297A (nl)	1985-09-02	Halfgeleiderinrichting voor het opwekken van een elektronenbundel.
US5315207A (en)	1994-05-24	Device for generating electrons, and display device
US4801994A (en)	1989-01-31	Semiconductor electron-current generating device having improved cathode efficiency
NL8500596A (nl)	1986-10-01	Inrichting voorzien van een halfgeleiderkathode.
NL8204240A (nl)	1983-06-01	Halfgeleiderinrichting voor het emitteren van elektronen en inrichting voorzien van een dergelijke halfgeleiderinrichting.
US5444328A (en)	1995-08-22	Electron tube comprising a semiconductor cathode
NL8204239A (nl)	1983-06-01	Halfgeleiderinrichting voor het emitteren van elektronen en inrichting voorzien van een dergelijke halfgeleiderinrichting.
US4890031A (en)	1989-12-26	Semiconductor cathode with increased stability
US4333035A (en)	1982-06-01	Areal array of tubular electron sources
NL8403537A (nl)	1986-06-16	Kathodestraalbuis met ionenval.
US4749904A (en)	1988-06-07	Cathode ray tube with an ion trap including a barrier member
US4438557A (en)	1984-03-27	Method of using an areal array of tubular electron sources
US3032674A (en)	1962-05-01	Electron gun structure for cathode ray tube
JPS62229731A (ja)	1987-10-08	電子ビ−ム発生用半導体デバイス
US3546514A (en)	1970-12-08	Secondary-emission conductivity target comprising highly porous storage layer and less porous intermediate layer as base for metal film
US6005351A (en)	1999-12-21	Flat panel display device using thin diamond electron beam amplifier
NL8403538A (nl)	1986-06-16	Halfgeleiderkathode met verhoogde stabiliteit.
EP0795193B1 (en)	2000-06-21	Electron-optical device having two elongate emitting regions
CA1276295C (en)	1990-11-13	Electron beam addressed memory
JP3154065B2 (ja)	2001-04-09	電子放出素子、及びこれを用いた電子放出装置、表示装置、電子線描画装置
NL8501490A (nl)	1986-12-16	Halfgeleiderkathode met verhoogde stroomdichtheid.
JPS63274043A (ja)	1988-11-11	電界放射電子銃
JPS5891643A (ja)	1983-05-31	電子ビ−ムアニ−ル方法