NL7808991A - Selectieve bestraling van thyristors. - Google Patents

Selectieve bestraling van thyristors.

Info

Publication number
NL7808991A
NL7808991A NL7808991A NL7808991A NL7808991A NL 7808991 A NL7808991 A NL 7808991A NL 7808991 A NL7808991 A NL 7808991A NL 7808991 A NL7808991 A NL 7808991A NL 7808991 A NL7808991 A NL 7808991A
Authority
NL
Netherlands
Prior art keywords
thyristors
selective radiation
selective
radiation
Prior art date
Application number
NL7808991A
Other languages
English (en)
Dutch (nl)
Original Assignee
Gen Electric
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gen Electric filed Critical Gen Electric
Publication of NL7808991A publication Critical patent/NL7808991A/xx

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70Bipolar devices
    • H01L29/74Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/747Bidirectional devices, e.g. triacs
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26Bombardment with radiation
    • H01L21/263Bombardment with radiation with high-energy radiation
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/024Defect control-gettering and annealing

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Toxicology (AREA)
  • Manufacturing & Machinery (AREA)
  • Health & Medical Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Thyristors (AREA)
NL7808991A 1977-09-02 1978-09-01 Selectieve bestraling van thyristors. NL7808991A (nl)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/830,190 US4134778A (en) 1977-09-02 1977-09-02 Selective irradiation of thyristors

Publications (1)

Publication Number Publication Date
NL7808991A true NL7808991A (nl) 1979-03-06

Family

ID=25256498

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7808991A NL7808991A (nl) 1977-09-02 1978-09-01 Selectieve bestraling van thyristors.

Country Status (7)

Country Link
US (1) US4134778A (xx)
JP (1) JPS5453873A (xx)
DE (1) DE2837762C2 (xx)
FR (1) FR2402302A1 (xx)
GB (1) GB1586396A (xx)
NL (1) NL7808991A (xx)
SE (1) SE7806393L (xx)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5478676A (en) * 1977-12-05 1979-06-22 Mitsubishi Electric Corp Manufacture of semiconductor device
US4278475A (en) * 1979-01-04 1981-07-14 Westinghouse Electric Corp. Forming of contoured irradiated regions in materials such as semiconductor bodies by nuclear radiation
US4230791A (en) * 1979-04-02 1980-10-28 General Electric Company Control of valley current in a unijunction transistor by electron irradiation
US4318750A (en) * 1979-12-28 1982-03-09 Westinghouse Electric Corp. Method for radiation hardening semiconductor devices and integrated circuits to latch-up effects
US4311534A (en) * 1980-06-27 1982-01-19 Westinghouse Electric Corp. Reducing the reverse recovery charge of thyristors by nuclear irradiation
US4432008A (en) * 1980-07-21 1984-02-14 The Board Of Trustees Of The Leland Stanford Junior University Gold-doped IC resistor region
US4914045A (en) * 1985-12-19 1990-04-03 Teccor Electronics, Inc. Method of fabricating packaged TRIAC and trigger switch
JPH06349838A (ja) * 1993-06-08 1994-12-22 Toshiba Corp 半導体装置およびその製造方法
US6008092A (en) * 1996-02-12 1999-12-28 International Rectifier Corporation Short channel IGBT with improved forward voltage drop and improved switching power loss
JPH10270451A (ja) * 1997-03-25 1998-10-09 Rohm Co Ltd 半導体装置およびその製造方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3442722A (en) * 1964-12-16 1969-05-06 Siemens Ag Method of making a pnpn thyristor
US3881963A (en) * 1973-01-18 1975-05-06 Westinghouse Electric Corp Irradiation for fast switching thyristors
US3864174A (en) * 1973-01-22 1975-02-04 Nobuyuki Akiyama Method for manufacturing semiconductor device
US3881964A (en) * 1973-03-05 1975-05-06 Westinghouse Electric Corp Annealing to control gate sensitivity of gated semiconductor devices
US3888701A (en) * 1973-03-09 1975-06-10 Westinghouse Electric Corp Tailoring reverse recovery time and forward voltage drop characteristics of a diode by irradiation and annealing
US3933527A (en) * 1973-03-09 1976-01-20 Westinghouse Electric Corporation Fine tuning power diodes with irradiation
US3877997A (en) * 1973-03-20 1975-04-15 Westinghouse Electric Corp Selective irradiation for fast switching thyristor with low forward voltage drop
CA1006987A (en) * 1973-05-04 1977-03-15 Michael W. Cresswell Dynamic isolation of high density conductivity modulation states in integrated circuits
US3943013A (en) * 1973-10-11 1976-03-09 General Electric Company Triac with gold diffused boundary
US4043837A (en) * 1975-01-10 1977-08-23 Westinghouse Electric Corporation Low forward voltage drop thyristor
JPS51139280A (en) * 1975-05-27 1976-12-01 Mitsubishi Electric Corp Semi-conductor device and method of manufacturing the same
US4056408A (en) * 1976-03-17 1977-11-01 Westinghouse Electric Corporation Reducing the switching time of semiconductor devices by nuclear irradiation
US4047976A (en) * 1976-06-21 1977-09-13 Motorola, Inc. Method for manufacturing a high-speed semiconductor device

Also Published As

Publication number Publication date
US4134778A (en) 1979-01-16
FR2402302B1 (xx) 1981-12-11
SE7806393L (sv) 1979-03-03
JPS5453873A (en) 1979-04-27
FR2402302A1 (fr) 1979-03-30
GB1586396A (en) 1981-03-18
DE2837762C2 (de) 1985-01-10
DE2837762A1 (de) 1979-03-15

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Legal Events

Date Code Title Description
BA A request for search or an international-type search has been filed
A85 Still pending on 85-01-01
BB A search report has been drawn up
BC A request for examination has been filed
BV The patent application has lapsed