CA1006987A - Dynamic isolation of high density conductivity modulation states in integrated circuits - Google Patents
Dynamic isolation of high density conductivity modulation states in integrated circuitsInfo
- Publication number
- CA1006987A CA1006987A CA197,034A CA197034A CA1006987A CA 1006987 A CA1006987 A CA 1006987A CA 197034 A CA197034 A CA 197034A CA 1006987 A CA1006987 A CA 1006987A
- Authority
- CA
- Canada
- Prior art keywords
- high density
- integrated circuits
- conductivity modulation
- modulation states
- dynamic isolation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000002955 isolation Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/0817—Thyristors only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- High Energy & Nuclear Physics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Thyristors (AREA)
- Element Separation (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US35743573A | 1973-05-04 | 1973-05-04 |
Publications (1)
Publication Number | Publication Date |
---|---|
CA1006987A true CA1006987A (en) | 1977-03-15 |
Family
ID=23405585
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CA197,034A Expired CA1006987A (en) | 1973-05-04 | 1974-04-08 | Dynamic isolation of high density conductivity modulation states in integrated circuits |
Country Status (3)
Country | Link |
---|---|
JP (2) | JPS5017587A (en) |
CA (1) | CA1006987A (en) |
FR (1) | FR2228300A1 (en) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5533179B2 (en) * | 1974-03-23 | 1980-08-29 | ||
JPS51139280A (en) * | 1975-05-27 | 1976-12-01 | Mitsubishi Electric Corp | Semi-conductor device and method of manufacturing the same |
US4043836A (en) * | 1976-05-03 | 1977-08-23 | General Electric Company | Method of manufacturing semiconductor devices |
GB1599230A (en) * | 1977-08-26 | 1981-09-30 | Gen Electric | Unijunction transistors |
US4134778A (en) * | 1977-09-02 | 1979-01-16 | General Electric Company | Selective irradiation of thyristors |
DE2805813C3 (en) * | 1978-02-11 | 1984-02-23 | Semikron Gesellschaft Fuer Gleichrichterbau U. Elektronik Mbh, 8500 Nuernberg | l.PT 02/23/84 semiconductor arrangement SEMIKRON Gesellschaft für Gleichrichterbau u. Electronics mbH, 8500 Nuremberg, DE |
JPH0715992B2 (en) * | 1989-11-14 | 1995-02-22 | 新電元工業株式会社 | Bidirectional 2-terminal thyristor |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3442722A (en) * | 1964-12-16 | 1969-05-06 | Siemens Ag | Method of making a pnpn thyristor |
-
1974
- 1974-04-08 CA CA197,034A patent/CA1006987A/en not_active Expired
- 1974-05-03 FR FR7415465A patent/FR2228300A1/en active Granted
- 1974-05-04 JP JP5017974A patent/JPS5017587A/ja active Pending
-
1977
- 1977-02-10 JP JP1433377U patent/JPS52109453U/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
FR2228300A1 (en) | 1974-11-29 |
FR2228300B1 (en) | 1979-02-16 |
JPS5017587A (en) | 1975-02-24 |
JPS52109453U (en) | 1977-08-19 |
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