CA1006987A - Dynamic isolation of high density conductivity modulation states in integrated circuits - Google Patents

Dynamic isolation of high density conductivity modulation states in integrated circuits

Info

Publication number
CA1006987A
CA1006987A CA197,034A CA197034A CA1006987A CA 1006987 A CA1006987 A CA 1006987A CA 197034 A CA197034 A CA 197034A CA 1006987 A CA1006987 A CA 1006987A
Authority
CA
Canada
Prior art keywords
high density
integrated circuits
conductivity modulation
modulation states
dynamic isolation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA197,034A
Inventor
Michael W. Cresswell
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CBS Corp
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Application granted granted Critical
Publication of CA1006987A publication Critical patent/CA1006987A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/0817Thyristors only
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26Bombardment with radiation
    • H01L21/263Bombardment with radiation with high-energy radiation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76Making of isolation regions between components

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Thyristors (AREA)
  • Element Separation (AREA)
  • Bipolar Transistors (AREA)
CA197,034A 1973-05-04 1974-04-08 Dynamic isolation of high density conductivity modulation states in integrated circuits Expired CA1006987A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US35743573A 1973-05-04 1973-05-04

Publications (1)

Publication Number Publication Date
CA1006987A true CA1006987A (en) 1977-03-15

Family

ID=23405585

Family Applications (1)

Application Number Title Priority Date Filing Date
CA197,034A Expired CA1006987A (en) 1973-05-04 1974-04-08 Dynamic isolation of high density conductivity modulation states in integrated circuits

Country Status (3)

Country Link
JP (2) JPS5017587A (en)
CA (1) CA1006987A (en)
FR (1) FR2228300A1 (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5533179B2 (en) * 1974-03-23 1980-08-29
JPS51139280A (en) * 1975-05-27 1976-12-01 Mitsubishi Electric Corp Semi-conductor device and method of manufacturing the same
US4043836A (en) * 1976-05-03 1977-08-23 General Electric Company Method of manufacturing semiconductor devices
GB1599230A (en) * 1977-08-26 1981-09-30 Gen Electric Unijunction transistors
US4134778A (en) * 1977-09-02 1979-01-16 General Electric Company Selective irradiation of thyristors
DE2805813C3 (en) * 1978-02-11 1984-02-23 Semikron Gesellschaft Fuer Gleichrichterbau U. Elektronik Mbh, 8500 Nuernberg l.PT 02/23/84 semiconductor arrangement SEMIKRON Gesellschaft für Gleichrichterbau u. Electronics mbH, 8500 Nuremberg, DE
JPH0715992B2 (en) * 1989-11-14 1995-02-22 新電元工業株式会社 Bidirectional 2-terminal thyristor

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3442722A (en) * 1964-12-16 1969-05-06 Siemens Ag Method of making a pnpn thyristor

Also Published As

Publication number Publication date
FR2228300A1 (en) 1974-11-29
FR2228300B1 (en) 1979-02-16
JPS5017587A (en) 1975-02-24
JPS52109453U (en) 1977-08-19

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