NL7607984A - Halfgeleidergeheugen. - Google Patents
Halfgeleidergeheugen.Info
- Publication number
- NL7607984A NL7607984A NL7607984A NL7607984A NL7607984A NL 7607984 A NL7607984 A NL 7607984A NL 7607984 A NL7607984 A NL 7607984A NL 7607984 A NL7607984 A NL 7607984A NL 7607984 A NL7607984 A NL 7607984A
- Authority
- NL
- Netherlands
- Prior art keywords
- semiconductor memory
- semiconductor
- memory
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42396—Gate electrodes for field effect devices for charge coupled devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
- G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Semiconductor Memories (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE2532594A DE2532594B2 (de) | 1975-07-21 | 1975-07-21 | Halbleiterspeicher |
Publications (1)
Publication Number | Publication Date |
---|---|
NL7607984A true NL7607984A (nl) | 1977-01-25 |
Family
ID=5952074
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL7607984A NL7607984A (nl) | 1975-07-21 | 1976-07-19 | Halfgeleidergeheugen. |
Country Status (5)
Country | Link |
---|---|
JP (1) | JPS5212584A (de) |
DE (1) | DE2532594B2 (de) |
FR (1) | FR2319182A1 (de) |
GB (1) | GB1516005A (de) |
NL (1) | NL7607984A (de) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5279679A (en) * | 1975-12-26 | 1977-07-04 | Toshiba Corp | Semiconductor memory device |
JPS6034270B2 (ja) * | 1976-01-12 | 1985-08-07 | テキサス・インスツルメンツ・インコ−ポレイテツド | 半導体メモリ装置およびその製造方法 |
NL176415C (nl) * | 1976-07-05 | 1985-04-01 | Hitachi Ltd | Halfgeleidergeheugeninrichting omvattende een matrix van halfgeleidergeheugencellen, die bestaan uit een veldeffekttransistor en een opslagcapaciteit. |
IT1089299B (it) * | 1977-01-26 | 1985-06-18 | Mostek Corp | Procedimento per fabbricare un dispositivo semiconduttore |
JPS54159887A (en) * | 1978-06-08 | 1979-12-18 | Nec Corp | Semiconductor memory device |
DE2905506A1 (de) * | 1979-02-14 | 1980-09-04 | Bosch Gmbh Robert | Zuendbeginnsensor, insbesondere bei brennkraftmaschinen |
DE2935254A1 (de) * | 1979-08-31 | 1981-04-02 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zur herstellung einer monolithischen statischen speicherzelle |
DE2935291A1 (de) * | 1979-08-31 | 1981-03-19 | Siemens AG, 1000 Berlin und 8000 München | Monolithische statische speicherzelle |
EP0154685B1 (de) * | 1980-01-25 | 1990-04-18 | Kabushiki Kaisha Toshiba | Halbleiterspeichervorrichtung |
JPS57210665A (en) * | 1981-06-19 | 1982-12-24 | Mitsubishi Electric Corp | Semiconductor memory device |
DE3138295A1 (de) * | 1981-09-25 | 1983-04-14 | Siemens AG, 1000 Berlin und 8000 München | Zweidimensionaler halbleiter-bildsensor mit hoher packungsdichte |
DE3138314A1 (de) * | 1981-09-25 | 1983-04-14 | Siemens AG, 1000 Berlin und 8000 München | Zweidimensionaler halbleiter-bildsensor hoher packungsdichte mit fotoleiterschicht |
JPS5921168U (ja) * | 1982-07-30 | 1984-02-08 | 三菱電機株式会社 | メカニカル・シ−ル |
JP2533070Y2 (ja) * | 1989-06-14 | 1997-04-16 | 株式会社 テーアンテー | スライドスイッチ |
-
1975
- 1975-07-21 DE DE2532594A patent/DE2532594B2/de not_active Withdrawn
-
1976
- 1976-06-10 GB GB22532/76A patent/GB1516005A/en not_active Expired
- 1976-07-01 FR FR7620111A patent/FR2319182A1/fr active Granted
- 1976-07-19 NL NL7607984A patent/NL7607984A/xx not_active Application Discontinuation
- 1976-07-21 JP JP51087103A patent/JPS5212584A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS5212584A (en) | 1977-01-31 |
DE2532594A1 (de) | 1977-02-03 |
JPS56947B2 (de) | 1981-01-10 |
GB1516005A (en) | 1978-06-28 |
DE2532594B2 (de) | 1980-05-22 |
FR2319182A1 (fr) | 1977-02-18 |
FR2319182B3 (de) | 1979-03-23 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
BA | A request for search or an international-type search has been filed | ||
BB | A search report has been drawn up | ||
BV | The patent application has lapsed |